TW414726B - Method and apparatus for coating diamond-like networks onto particles - Google Patents
Method and apparatus for coating diamond-like networks onto particles Download PDFInfo
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- TW414726B TW414726B TW087118313A TW87118313A TW414726B TW 414726 B TW414726 B TW 414726B TW 087118313 A TW087118313 A TW 087118313A TW 87118313 A TW87118313 A TW 87118313A TW 414726 B TW414726 B TW 414726B
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
- B01J2/006—Coating of the granules without description of the process or the device by which the granules are obtained
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/979,072 US6015597A (en) | 1997-11-26 | 1997-11-26 | Method for coating diamond-like networks onto particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW414726B true TW414726B (en) | 2000-12-11 |
Family
ID=25526671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087118313A TW414726B (en) | 1997-11-26 | 1998-11-04 | Method and apparatus for coating diamond-like networks onto particles |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6015597A (enExample) |
| EP (1) | EP1034320B1 (enExample) |
| JP (1) | JP4336040B2 (enExample) |
| KR (1) | KR100582134B1 (enExample) |
| CN (1) | CN1109776C (enExample) |
| AU (1) | AU9687898A (enExample) |
| DE (1) | DE69803096T2 (enExample) |
| TW (1) | TW414726B (enExample) |
| WO (1) | WO1999027157A1 (enExample) |
Families Citing this family (133)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9625916D0 (en) * | 1996-12-13 | 1997-01-29 | Gencoa Limited | Low friction coating |
| US6015597A (en) * | 1997-11-26 | 2000-01-18 | 3M Innovative Properties Company | Method for coating diamond-like networks onto particles |
| JP3555844B2 (ja) * | 1999-04-09 | 2004-08-18 | 三宅 正二郎 | 摺動部材およびその製造方法 |
| US6406745B1 (en) * | 1999-06-07 | 2002-06-18 | Nanosphere, Inc. | Methods for coating particles and particles produced thereby |
| DE50008516D1 (de) * | 1999-07-13 | 2004-12-09 | Unaxis Balzers Ag | Anlage und verfahren zur vakuumbehandlung bzw. zur pulverherstellung |
| WO2001040537A1 (en) * | 1999-11-30 | 2001-06-07 | The Regents Of The University Of California | Method for producing fluorinated diamond-like carbon films |
| US6749813B1 (en) | 2000-03-05 | 2004-06-15 | 3M Innovative Properties Company | Fluid handling devices with diamond-like films |
| US6696157B1 (en) * | 2000-03-05 | 2004-02-24 | 3M Innovative Properties Company | Diamond-like glass thin films |
| US6795636B1 (en) | 2000-03-05 | 2004-09-21 | 3M Innovative Properties Company | Radiation-transmissive films on glass articles |
| EP1158088A3 (de) * | 2000-05-26 | 2003-01-22 | Voith Paper Patent GmbH | Verfahren und Vorrichtung zur Behandlung einer Faserstoffsuspension |
| US6565719B1 (en) | 2000-06-27 | 2003-05-20 | Komag, Inc. | Magnetic disk comprising a first carbon overcoat having a high SP3 content and a second carbon overcoat having a low SP3 content |
| US6669996B2 (en) | 2000-07-06 | 2003-12-30 | University Of Louisville | Method of synthesizing metal doped diamond-like carbon films |
| US20030107865A1 (en) * | 2000-12-11 | 2003-06-12 | Shinsuke Masuda | Wafer handling apparatus and method of manufacturing the same |
| US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
| AU2002241936A1 (en) * | 2001-01-22 | 2002-07-30 | N.V.Bekaert S.A. | Copper diffusion barriers |
| JP4753489B2 (ja) * | 2001-04-27 | 2011-08-24 | 株式会社ユーテック | Dlc被覆粉体の焼結体の製造方法 |
| DE60205493T2 (de) * | 2001-08-31 | 2006-06-01 | Apit Corp. Sa | Verfahren und vorrichtung zur herstellung von pulver aus verbundmaterial |
| US7106939B2 (en) * | 2001-09-19 | 2006-09-12 | 3M Innovative Properties Company | Optical and optoelectronic articles |
| US6878419B2 (en) * | 2001-12-14 | 2005-04-12 | 3M Innovative Properties Co. | Plasma treatment of porous materials |
| US7887889B2 (en) * | 2001-12-14 | 2011-02-15 | 3M Innovative Properties Company | Plasma fluorination treatment of porous materials |
| US20030157000A1 (en) * | 2002-02-15 | 2003-08-21 | Kimberly-Clark Worldwide, Inc. | Fluidized bed activated by excimer plasma and materials produced therefrom |
| DE10213661A1 (de) * | 2002-03-27 | 2003-10-16 | Bosch Gmbh Robert | Verfahren zur Herstellung einer Beschichtung eines metallischen Substrates |
| KR100455430B1 (ko) | 2002-03-29 | 2004-11-06 | 주식회사 엘지이아이 | 열교환기 표면처리장비의 냉각장치 및 그 제조방법 |
| KR100455426B1 (ko) | 2002-03-29 | 2004-11-06 | 주식회사 엘지이아이 | 열교환기 연속 표면처리장비의 2열처리구조 |
| KR100486692B1 (ko) | 2002-03-29 | 2005-05-03 | 주식회사 엘지이아이 | 연속처리가 가능한 열교환기 표면처리장치 |
| DE10227836B4 (de) * | 2002-06-21 | 2006-02-09 | Mikrowellen-Systeme Mws Gmbh | Verfahren, Verwendung des Verfahrens sowie Verwendung eines Mikrowellenheizgeräts zum Mischen und zur Auslösung von chemischen Reaktionen von Feststoffgemischen oder Suspensionen in einem Mikrowellenfeld |
| US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
| GB0217553D0 (en) * | 2002-07-30 | 2002-09-11 | Sheel David W | Titania coatings by CVD at atmospheric pressure |
| US6753271B2 (en) | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
| US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
| US6673701B1 (en) * | 2002-08-27 | 2004-01-06 | Micron Technology, Inc. | Atomic layer deposition methods |
| JP2004100012A (ja) * | 2002-09-12 | 2004-04-02 | Univ Nagoya | 化合物薄膜、及び化合物薄膜の作製方法 |
| DE10243022A1 (de) * | 2002-09-17 | 2004-03-25 | Degussa Ag | Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor |
| JP2004138128A (ja) | 2002-10-16 | 2004-05-13 | Nissan Motor Co Ltd | 自動車エンジン用摺動部材 |
| US6969198B2 (en) * | 2002-11-06 | 2005-11-29 | Nissan Motor Co., Ltd. | Low-friction sliding mechanism |
| DE10260745A1 (de) * | 2002-12-23 | 2004-07-01 | Outokumpu Oyj | Verfahren und Anlage zur thermischen Behandlung von körnigen Feststoffen |
| US6907841B2 (en) * | 2002-12-27 | 2005-06-21 | Korea Institute Of Science And Technology | Apparatus and method for synthesizing spherical diamond powder by using chemical vapor deposition method |
| JP3891433B2 (ja) * | 2003-04-15 | 2007-03-14 | 日産自動車株式会社 | 燃料噴射弁 |
| EP1479946B1 (en) * | 2003-05-23 | 2012-12-19 | Nissan Motor Co., Ltd. | Piston for internal combustion engine |
| EP1482190B1 (en) * | 2003-05-27 | 2012-12-05 | Nissan Motor Company Limited | Rolling element |
| JP2005008851A (ja) * | 2003-05-29 | 2005-01-13 | Nissan Motor Co Ltd | 硬質炭素薄膜付き機械加工工具用切削油及び硬質炭素薄膜付き機械加工工具 |
| JP2004360649A (ja) | 2003-06-06 | 2004-12-24 | Nissan Motor Co Ltd | エンジン用ピストンピン |
| US7781063B2 (en) | 2003-07-11 | 2010-08-24 | Siemens Energy, Inc. | High thermal conductivity materials with grafted surface functional groups |
| US7033670B2 (en) * | 2003-07-11 | 2006-04-25 | Siemens Power Generation, Inc. | LCT-epoxy polymers with HTC-oligomers and method for making the same |
| JP4863152B2 (ja) * | 2003-07-31 | 2012-01-25 | 日産自動車株式会社 | 歯車 |
| CN101760286B (zh) * | 2003-08-06 | 2013-03-20 | 日产自动车株式会社 | 低摩擦滑动机构、低摩擦剂组合物以及减小摩擦的方法 |
| JP4973971B2 (ja) * | 2003-08-08 | 2012-07-11 | 日産自動車株式会社 | 摺動部材 |
| JP2005054617A (ja) * | 2003-08-08 | 2005-03-03 | Nissan Motor Co Ltd | 動弁機構 |
| DE602004008547T2 (de) | 2003-08-13 | 2008-05-21 | Nissan Motor Co., Ltd., Yokohama | Struktur zur Verbindung von einem Kolben mit einer Kurbelwelle |
| JP4117553B2 (ja) * | 2003-08-13 | 2008-07-16 | 日産自動車株式会社 | チェーン駆動装置 |
| US7771821B2 (en) * | 2003-08-21 | 2010-08-10 | Nissan Motor Co., Ltd. | Low-friction sliding member and low-friction sliding mechanism using same |
| JP4539205B2 (ja) | 2003-08-21 | 2010-09-08 | 日産自動車株式会社 | 冷媒圧縮機 |
| EP1508611B1 (en) | 2003-08-22 | 2019-04-17 | Nissan Motor Co., Ltd. | Transmission comprising low-friction sliding members and transmission oil therefor |
| CN1902492A (zh) * | 2003-12-30 | 2007-01-24 | 3M创新有限公司 | 基底及结合到该基底上的化合物 |
| US7658994B2 (en) * | 2003-12-30 | 2010-02-09 | 3M Innovative Properties Company | Substrates and compounds bonded thereto |
| JP2005256047A (ja) * | 2004-03-10 | 2005-09-22 | Ulvac Japan Ltd | Mg合金部材の表面処理方法及び表面処理装置 |
| KR20070116191A (ko) * | 2004-03-30 | 2007-12-06 | 토요 어드밴스드 테크놀로지스 컴퍼니 리미티드 | 기재의 표면처리방법, 의료용 재료, 의료용 기구 |
| US7553438B2 (en) * | 2004-06-15 | 2009-06-30 | Siemens Energy, Inc. | Compression of resin impregnated insulating tapes |
| US7592045B2 (en) * | 2004-06-15 | 2009-09-22 | Siemens Energy, Inc. | Seeding of HTC fillers to form dendritic structures |
| US7776392B2 (en) * | 2005-04-15 | 2010-08-17 | Siemens Energy, Inc. | Composite insulation tape with loaded HTC materials |
| US7309526B2 (en) * | 2004-06-15 | 2007-12-18 | Siemens Power Generation, Inc. | Diamond like carbon coating on nanofillers |
| US20050277721A1 (en) | 2004-06-15 | 2005-12-15 | Siemens Westinghouse Power Corporation | High thermal conductivity materials aligned within resins |
| US7553781B2 (en) * | 2004-06-15 | 2009-06-30 | Siemens Energy, Inc. | Fabrics with high thermal conductivity coatings |
| US8216672B2 (en) * | 2004-06-15 | 2012-07-10 | Siemens Energy, Inc. | Structured resin systems with high thermal conductivity fillers |
| US20050274774A1 (en) * | 2004-06-15 | 2005-12-15 | Smith James D | Insulation paper with high thermal conductivity materials |
| US20080050580A1 (en) * | 2004-06-15 | 2008-02-28 | Stevens Gary C | High Thermal Conductivity Mica Paper Tape |
| KR20070051345A (ko) | 2004-08-23 | 2007-05-17 | 시바 스페셜티 케미칼스 홀딩 인크. | 알루미늄 및 SiOZ(Z=0.7-2.0)를 기본으로 하는플레이크형 안료의 제조방법 |
| US20070048456A1 (en) * | 2004-09-14 | 2007-03-01 | Keshner Marvin S | Plasma enhanced chemical vapor deposition apparatus and method |
| US20060172065A1 (en) * | 2005-02-01 | 2006-08-03 | Carlotto John A | Vacuum deposition of coating materials on powders |
| US7846853B2 (en) * | 2005-04-15 | 2010-12-07 | Siemens Energy, Inc. | Multi-layered platelet structure |
| US7651963B2 (en) * | 2005-04-15 | 2010-01-26 | Siemens Energy, Inc. | Patterning on surface with high thermal conductivity materials |
| KR100649091B1 (ko) * | 2005-06-13 | 2006-11-27 | 한국과학기술연구원 | 텅스텐 함유 다이아몬드상 탄소박막 및 그 제조방법,그리고 그에 따른 치과용구 |
| US7655295B2 (en) | 2005-06-14 | 2010-02-02 | Siemens Energy, Inc. | Mix of grafted and non-grafted particles in a resin |
| US7781057B2 (en) * | 2005-06-14 | 2010-08-24 | Siemens Energy, Inc. | Seeding resins for enhancing the crystallinity of polymeric substructures |
| US7851059B2 (en) * | 2005-06-14 | 2010-12-14 | Siemens Energy, Inc. | Nano and meso shell-core control of physical properties and performance of electrically insulating composites |
| US7955661B2 (en) * | 2005-06-14 | 2011-06-07 | Siemens Energy, Inc. | Treatment of micropores in mica materials |
| US8357433B2 (en) * | 2005-06-14 | 2013-01-22 | Siemens Energy, Inc. | Polymer brushes |
| US20070026221A1 (en) * | 2005-06-14 | 2007-02-01 | Siemens Power Generation, Inc. | Morphological forms of fillers for electrical insulation |
| US7510742B2 (en) * | 2005-11-18 | 2009-03-31 | United Technologies Corporation | Multilayered boron nitride/silicon nitride fiber coatings |
| US7604871B2 (en) * | 2006-06-07 | 2009-10-20 | Honeywell International Inc. | Electrical components including abrasive powder coatings for inhibiting tin whisker growth |
| US20080008842A1 (en) * | 2006-07-07 | 2008-01-10 | Applied Materials, Inc. | Method for plasma processing |
| US7547847B2 (en) * | 2006-09-19 | 2009-06-16 | Siemens Energy, Inc. | High thermal conductivity dielectric tape |
| CN101528975B (zh) * | 2006-10-20 | 2012-05-23 | 3M创新有限公司 | 用于易于清洁的基底的方法以及由其制得的制品 |
| US20080139003A1 (en) * | 2006-10-26 | 2008-06-12 | Shahid Pirzada | Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process |
| EP2203144A2 (en) | 2007-10-01 | 2010-07-07 | 3M Innovative Properties Company | Orthodontic composition with polymeric fillers |
| NL1036526A1 (nl) * | 2008-02-14 | 2009-08-17 | Asml Netherlands Bv | Use of a coating, an article having the coating and a lithographic apparatus comprising the coating. |
| DE102008020468B4 (de) * | 2008-04-23 | 2011-09-15 | Auctio Gmbh | Verfahren zur Beschichtung von Oberflächen mit einer elektrisch leitfähigen diamantähnlichen Schicht, elektrisch leitfähige diamantähnliche Schicht, hergestellt durch das Verfahren, Werkstück mit der nach dem Verfahren hergestellten elektrisch leitfähigen diamantähnlichen Schicht, Verfahren zur Herstellung des Werkstücks mit der elektrisch leitfähigen diamantähnlichen Schicht und Verfahren zur Bestimmung der Position des Werkstücks |
| JP5211332B2 (ja) * | 2008-07-01 | 2013-06-12 | 株式会社ユーテック | プラズマcvd装置、dlc膜及び薄膜の製造方法 |
| EP2341885A2 (en) * | 2008-09-30 | 2011-07-13 | 3M Innovative Properties Company | Orthodontic composition with heat modified minerals |
| CN104760955B (zh) * | 2009-04-28 | 2017-03-08 | 储晞 | 生产大颗粒金刚石的方法和设备 |
| CN102460635B (zh) | 2009-05-06 | 2014-12-24 | 3M创新有限公司 | 对容器进行等离子体处理的装置和方法 |
| FR2947814B1 (fr) * | 2009-07-13 | 2011-10-14 | Serigne Dioum | Produit de depollution d'un fluide et procede d'obtention |
| WO2011063372A2 (en) | 2009-11-23 | 2011-05-26 | 3M Innovative Properties Company | Absorbent articles comprising treated porous particles and methods of desiccating using treated porous particles |
| US10005672B2 (en) | 2010-04-14 | 2018-06-26 | Baker Hughes, A Ge Company, Llc | Method of forming particles comprising carbon and articles therefrom |
| US9205531B2 (en) | 2011-09-16 | 2015-12-08 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
| BR112012030011A2 (pt) | 2010-05-25 | 2016-08-02 | 3M Innovative Properties Co | revestimentos antimicrobianos |
| TWI515276B (zh) | 2010-05-25 | 2016-01-01 | 3M新設資產公司 | 抗微生物塗料 |
| US20120085284A1 (en) * | 2010-10-07 | 2012-04-12 | Dassel Mark W | Mechanically fluidized reactor systems and methods, suitable for production of silicon |
| GB201021870D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| US20120258853A1 (en) | 2011-04-11 | 2012-10-11 | 3M Innovative Property Company | Porous particles with masking powder and methods of making and using the same |
| CN102752950A (zh) * | 2011-04-22 | 2012-10-24 | 苏州市奥普斯等离子体科技有限公司 | 一种颗粒状物料低温等离子体表面处理方法及其装置 |
| US9951419B2 (en) * | 2011-09-03 | 2018-04-24 | Ying-Bing JIANG | Apparatus and method for making atomic layer deposition on fine powders |
| CA2848733A1 (en) | 2011-09-16 | 2013-03-21 | Baker Hughes Incorporated | Methods of fabricating polycrystalline diamond, and cutting elements and earth-boring tools comprising polycrystalline diamond |
| JP6076780B2 (ja) * | 2012-03-12 | 2017-02-08 | エア・ウォーター株式会社 | 粉体処理装置および粉体処理方法 |
| US8871153B2 (en) | 2012-05-25 | 2014-10-28 | Rokstar Technologies Llc | Mechanically fluidized silicon deposition systems and methods |
| EP2890414B1 (en) | 2012-08-29 | 2019-01-16 | Cardiac Pacemakers, Inc. | Enhanced low friction coating for medical leads and methods of making |
| TWI565353B (zh) * | 2012-10-19 | 2017-01-01 | 逢甲大學 | 可撓性電熱發熱體及其製作方法 |
| JP6189447B2 (ja) | 2012-11-21 | 2017-08-30 | カーディアック ペースメイカーズ, インコーポレイテッド | 医療装置、医療装置の電極およびその製造方法 |
| JP2016508544A (ja) * | 2013-01-23 | 2016-03-22 | ピコサン オーワイPicosun Oy | 粒子材料の処理のための方法及び装置 |
| SG11201505479VA (en) | 2013-03-13 | 2015-09-29 | Celanese Acetate Llc | Smoke filters for reducing components in a smoke stream |
| WO2014209567A1 (en) * | 2013-06-24 | 2014-12-31 | 3M Innovative Properties Company | Abrasive particles, method of making abrasive particles, and abrasive articles |
| US9884766B2 (en) * | 2013-11-12 | 2018-02-06 | Perpetuus Research & Development, Ltd. | Treating particles |
| US20170008143A1 (en) * | 2014-01-24 | 2017-01-12 | 3M Innovative Properties Company | Abrasive material having a structured surface |
| SG11201608238TA (en) * | 2014-04-07 | 2016-10-28 | Powder Treat Technology Llc | Surface energy modified particles, method of making, and use thereof |
| US9520295B2 (en) * | 2015-02-03 | 2016-12-13 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
| US9865459B2 (en) * | 2015-04-22 | 2018-01-09 | Applied Materials, Inc. | Plasma treatment to improve adhesion between hardmask film and silicon oxide film |
| CN105617962B (zh) * | 2016-02-27 | 2018-11-23 | 安徽海德化工科技有限公司 | 一种内外循环式超声波-微波搅拌反应釜 |
| US10519539B2 (en) * | 2017-03-24 | 2019-12-31 | City University Of Hong Kong | Method for hydrogen-free diamond-like coatings having isolated carbon particle embedded within |
| US20190127846A1 (en) * | 2017-10-26 | 2019-05-02 | Duralar Technologies, Llc | Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors |
| CN107952402B (zh) * | 2017-11-23 | 2019-11-01 | 福建农林大学 | 一种流化床及其气相法包覆片状材料的工艺 |
| US20190161859A1 (en) * | 2017-11-30 | 2019-05-30 | Ying-Bing JIANG | Apparatus for making large-scale atomic layer deposition on powdered materials with plowing action |
| CN109119627B (zh) * | 2018-08-28 | 2022-03-29 | 中南大学 | 一种高性能硅碳基负极材料的制备方法及装置 |
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| KR102488995B1 (ko) * | 2020-08-03 | 2023-01-16 | 전남대학교산학협력단 | 분말 입자 코팅을 위한 증착 장치를 사용하여 분말 입자 표면을 균일하게 코팅하는 방법 |
| CN115261816A (zh) * | 2022-09-05 | 2022-11-01 | 西安交通大学 | 粉体表面类金刚石沉积的悬臂梁式振动等离子体流化床 |
| WO2024246577A1 (en) * | 2023-05-26 | 2024-12-05 | Argor-Aljba Sa | Support structure of pieces to be covered, in particular by means of a pvd (physical vapor deposition), dlc (diamond like carbon), cvd (chemical vapor deposition), pa-cvd (plasma assisted chemical vapor deposition) or pe-cvd (plasma enhanced chemical vapor deposition) covering |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59137311A (ja) * | 1983-01-21 | 1984-08-07 | Natl Inst For Res In Inorg Mater | 多結晶質ダイヤモンドの合成法 |
| DE3546113A1 (de) * | 1985-12-24 | 1987-06-25 | Santrade Ltd | Verbundpulverteilchen, verbundkoerper und verfahren zu deren herstellung |
| US4806246A (en) * | 1986-04-11 | 1989-02-21 | Applied Membrane Technology, Inc. | Pore size control using plasma polymerization techniques |
| WO1988007599A1 (fr) * | 1987-03-23 | 1988-10-06 | Showa Denko Kabushiki Kaisha | Particules de diamant composites |
| US4859493A (en) * | 1987-03-31 | 1989-08-22 | Lemelson Jerome H | Methods of forming synthetic diamond coatings on particles using microwaves |
| JPS63270394A (ja) * | 1987-04-28 | 1988-11-08 | Showa Denko Kk | 流動式ダイヤモンド合成方法及び合成装置 |
| JPH0340953A (ja) * | 1989-07-06 | 1991-02-21 | Tomoegawa Paper Co Ltd | 超伝導体成形物の製造方法 |
| DE69021821T2 (de) * | 1989-09-20 | 1996-05-30 | Sumitomo Electric Industries | Verfahren und Anlage zum Herstellen von Hartstoff. |
| WO1991010341A1 (en) * | 1990-01-04 | 1991-07-11 | Savas Stephen E | A low frequency inductive rf plasma reactor |
| US5132105A (en) * | 1990-02-02 | 1992-07-21 | Quantametrics, Inc. | Materials with diamond-like properties and method and means for manufacturing them |
| JP2739129B2 (ja) * | 1990-02-21 | 1998-04-08 | 日本碍子株式会社 | 複合部材の製造方法 |
| US5156885A (en) * | 1990-04-25 | 1992-10-20 | Minnesota Mining And Manufacturing Company | Method for encapsulating electroluminescent phosphor particles |
| JP2967559B2 (ja) * | 1991-03-29 | 1999-10-25 | 日亜化学工業株式会社 | 蛍光体及びその製造方法 |
| DE4122834A1 (de) * | 1991-07-10 | 1993-01-14 | Siemens Ag | Verfahren zur beschichtung von lwl-fasern |
| US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
| JPH06184533A (ja) * | 1992-12-21 | 1994-07-05 | Mitsubishi Cable Ind Ltd | 被覆蛍光体の製造方法 |
| JPH06299146A (ja) * | 1993-04-20 | 1994-10-25 | Mitsubishi Cable Ind Ltd | シリカ被覆蛍光体の製造方法 |
| EP0624896B1 (en) * | 1993-05-13 | 1999-09-22 | Applied Materials, Inc. | Contamination control in plasma contouring the plasma sheath using materials of differing rf impedances |
| US5587207A (en) * | 1994-11-14 | 1996-12-24 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating and sintering method |
| US5811022A (en) * | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| JP2838831B2 (ja) * | 1994-12-27 | 1998-12-16 | 関西日本電気株式会社 | 分散型el用蛍光体の被覆処理方法 |
| US5556521A (en) * | 1995-03-24 | 1996-09-17 | Sony Corporation | Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source |
| JPH08316205A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | プラズマ処理方法及びプラズマ処理装置 |
| JP3758203B2 (ja) * | 1995-05-26 | 2006-03-22 | 日亜化学工業株式会社 | 真空紫外線励起発光蛍光体およびその製造方法 |
| JP3585591B2 (ja) * | 1995-07-29 | 2004-11-04 | 株式会社半導体エネルギー研究所 | エッチング装置及びエッチング方法 |
| EP0949200A1 (en) * | 1996-06-05 | 1999-10-13 | R-Amtech International, Inc. | Method for forming conformal diamond-type carbon coatings, hard diamond-type carbon coating and porous filtration element using the same |
| US5948166A (en) * | 1996-11-05 | 1999-09-07 | 3M Innovative Properties Company | Process and apparatus for depositing a carbon-rich coating on a moving substrate |
| JP3040953U (ja) | 1997-02-26 | 1997-09-05 | 株式会社 サン・マテック | コンクリート打設用の床トラス鉄筋付き床構成材 |
| JPH10261371A (ja) * | 1997-03-17 | 1998-09-29 | Futaba Corp | 蛍光体及び表示管 |
| US6015597A (en) * | 1997-11-26 | 2000-01-18 | 3M Innovative Properties Company | Method for coating diamond-like networks onto particles |
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1997
- 1997-11-26 US US08/979,072 patent/US6015597A/en not_active Expired - Fee Related
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1998
- 1998-10-07 CN CN98811433A patent/CN1109776C/zh not_active Expired - Fee Related
- 1998-10-07 JP JP2000522295A patent/JP4336040B2/ja not_active Expired - Fee Related
- 1998-10-07 DE DE69803096T patent/DE69803096T2/de not_active Expired - Lifetime
- 1998-10-07 EP EP98950973A patent/EP1034320B1/en not_active Expired - Lifetime
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- 1998-10-07 AU AU96878/98A patent/AU9687898A/en not_active Abandoned
- 1998-11-04 TW TW087118313A patent/TW414726B/zh active
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1999
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| AU9687898A (en) | 1999-06-15 |
| EP1034320B1 (en) | 2001-12-19 |
| US6197120B1 (en) | 2001-03-06 |
| KR20010032454A (ko) | 2001-04-25 |
| WO1999027157A1 (en) | 1999-06-03 |
| US6015597A (en) | 2000-01-18 |
| DE69803096T2 (de) | 2002-08-22 |
| KR100582134B1 (ko) | 2006-05-23 |
| JP2001524603A (ja) | 2001-12-04 |
| DE69803096D1 (de) | 2002-01-31 |
| CN1279729A (zh) | 2001-01-10 |
| CN1109776C (zh) | 2003-05-28 |
| JP4336040B2 (ja) | 2009-09-30 |
| EP1034320A1 (en) | 2000-09-13 |
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