TW401583B - Display device and drive circuit therefor - Google Patents
Display device and drive circuit therefor Download PDFInfo
- Publication number
- TW401583B TW401583B TW087111683A TW87111683A TW401583B TW 401583 B TW401583 B TW 401583B TW 087111683 A TW087111683 A TW 087111683A TW 87111683 A TW87111683 A TW 87111683A TW 401583 B TW401583 B TW 401583B
- Authority
- TW
- Taiwan
- Prior art keywords
- channel
- tft
- circuit
- scope
- output terminal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 56
- 238000011049 filling Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 230000014509 gene expression Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 3
- 235000015170 shellfish Nutrition 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 82
- 239000010410 layer Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 239000012535 impurity Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 230000000875 corresponding effect Effects 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 230000003197 catalytic effect Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 241000508725 Elymus repens Species 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 244000126002 Ziziphus vulgaris Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20857097A JP4036923B2 (ja) | 1997-07-17 | 1997-07-17 | 表示装置およびその駆動回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW401583B true TW401583B (en) | 2000-08-11 |
Family
ID=16558380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087111683A TW401583B (en) | 1997-07-17 | 1998-07-17 | Display device and drive circuit therefor |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6292183B1 (enExample) |
| JP (1) | JP4036923B2 (enExample) |
| KR (1) | KR100635084B1 (enExample) |
| DE (1) | DE19832297B4 (enExample) |
| TW (1) | TW401583B (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4053136B2 (ja) * | 1998-06-17 | 2008-02-27 | 株式会社半導体エネルギー研究所 | 反射型半導体表示装置 |
| US6469317B1 (en) | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4576652B2 (ja) | 1999-02-18 | 2010-11-10 | ソニー株式会社 | 液晶表示装置 |
| GB2349996A (en) * | 1999-05-12 | 2000-11-15 | Sharp Kk | Voltage level converter for an active matrix LCD |
| US6545656B1 (en) * | 1999-05-14 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame |
| JP2000347159A (ja) * | 1999-06-09 | 2000-12-15 | Hitachi Ltd | 液晶表示装置 |
| US6967633B1 (en) * | 1999-10-08 | 2005-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7348953B1 (en) | 1999-11-22 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of driving liquid crystal display device |
| TW525122B (en) | 1999-11-29 | 2003-03-21 | Semiconductor Energy Lab | Electronic device |
| TW493152B (en) * | 1999-12-24 | 2002-07-01 | Semiconductor Energy Lab | Electronic device |
| TW507258B (en) * | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
| JP4416901B2 (ja) | 2000-03-14 | 2010-02-17 | 株式会社半導体エネルギー研究所 | レベルシフタ |
| US7633471B2 (en) * | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
| SG115378A1 (en) * | 2000-05-31 | 2005-10-28 | Toshiba Kk | Circuit panel and flat-panel display device |
| KR100385459B1 (ko) * | 2000-06-30 | 2003-05-27 | 천지득 | 씨아이이표색계를 이용한 알.지.비 바코드의 디코딩 알고리즘 |
| JP3866070B2 (ja) | 2000-10-20 | 2007-01-10 | 株式会社 日立ディスプレイズ | 表示装置 |
| JP2002236472A (ja) * | 2001-02-08 | 2002-08-23 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
| JP4785271B2 (ja) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
| JP2003060199A (ja) * | 2001-08-10 | 2003-02-28 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
| WO2003107314A2 (en) * | 2002-06-01 | 2003-12-24 | Samsung Electronics Co., Ltd. | Method of driving a shift register, a shift register, a liquid crystal display device having the shift register |
| DE10227332A1 (de) | 2002-06-19 | 2004-01-15 | Akt Electron Beam Technology Gmbh | Ansteuervorrichtung mit verbesserten Testeneigenschaften |
| CN100412630C (zh) * | 2002-07-11 | 2008-08-20 | 精工爱普生株式会社 | 电光器件及其驱动装置、驱动方法和电子装置 |
| KR100908654B1 (ko) * | 2002-11-27 | 2009-07-21 | 엘지디스플레이 주식회사 | 레벨 쉬프터 및 그를 내장한 래치 |
| KR100899628B1 (ko) * | 2002-12-24 | 2009-05-27 | 엘지디스플레이 주식회사 | 게이트 고전압 배선 및 게이트 저전압 배선을 구비한액정표시패널 |
| JP3974124B2 (ja) * | 2003-07-09 | 2007-09-12 | シャープ株式会社 | シフトレジスタおよびそれを用いる表示装置 |
| JP2005072264A (ja) * | 2003-08-25 | 2005-03-17 | Seiko Epson Corp | トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器 |
| US7274350B2 (en) * | 2004-01-22 | 2007-09-25 | Au Optronics Corp. | Analog buffer for LTPS amLCD |
| US7355418B2 (en) | 2004-02-12 | 2008-04-08 | Applied Materials, Inc. | Configurable prober for TFT LCD array test |
| US7319335B2 (en) | 2004-02-12 | 2008-01-15 | Applied Materials, Inc. | Configurable prober for TFT LCD array testing |
| US6833717B1 (en) | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
| US20050184407A1 (en) * | 2004-02-20 | 2005-08-25 | Takahiro Korenari | Transistor circuit, thin film transistor circuit and display device |
| JP4869569B2 (ja) * | 2004-06-23 | 2012-02-08 | 株式会社 日立ディスプレイズ | 表示装置 |
| KR100685814B1 (ko) * | 2005-02-18 | 2007-02-22 | 삼성에스디아이 주식회사 | 스캔 드라이버 및 이를 구비한 평판 표시 장치 |
| JP4821954B2 (ja) * | 2005-03-25 | 2011-11-24 | 日本電気株式会社 | アナログバッファ回路 |
| US7323924B2 (en) * | 2005-04-19 | 2008-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Level shifter circuit |
| US7535238B2 (en) | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
| JP4864408B2 (ja) * | 2005-09-30 | 2012-02-01 | シャープ株式会社 | アクティブマトリクス基板 |
| KR100714014B1 (ko) * | 2005-12-13 | 2007-05-04 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 |
| TWI323788B (en) | 2006-03-14 | 2010-04-21 | Applied Materials Inc | Method to reduce cross talk in a multi column e-beam test system |
| TW200746022A (en) * | 2006-04-19 | 2007-12-16 | Ignis Innovation Inc | Stable driving scheme for active matrix displays |
| US7602199B2 (en) | 2006-05-31 | 2009-10-13 | Applied Materials, Inc. | Mini-prober for TFT-LCD testing |
| US7786742B2 (en) | 2006-05-31 | 2010-08-31 | Applied Materials, Inc. | Prober for electronic device testing on large area substrates |
| US7443202B2 (en) * | 2006-06-02 | 2008-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic apparatus having the same |
| CN101287329B (zh) * | 2007-04-13 | 2011-04-20 | 群康科技(深圳)有限公司 | 显示装置 |
| EP2477172A4 (en) * | 2009-09-11 | 2016-03-23 | Sharp Kk | Active Matrix Substrate and Active Matrix Display Device |
| JP5101669B2 (ja) * | 2010-08-02 | 2012-12-19 | 株式会社ジャパンディスプレイイースト | 表示装置 |
| TWI563488B (en) * | 2016-02-01 | 2016-12-21 | Sitronix Technology Corp | Gate driving circuit |
| CN115295560B (zh) * | 2022-08-05 | 2024-08-02 | 厦门天马显示科技有限公司 | 显示面板和显示装置 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5929155B2 (ja) * | 1979-11-12 | 1984-07-18 | 富士通株式会社 | 半導体記憶装置 |
| JPH0738583B2 (ja) | 1985-01-26 | 1995-04-26 | 株式会社東芝 | 半導体集積回路 |
| US5264720A (en) * | 1989-09-22 | 1993-11-23 | Nippondenso Co., Ltd. | High withstanding voltage transistor |
| US5105187A (en) * | 1990-04-18 | 1992-04-14 | General Electric Company | Shift register for active matrix display devices |
| JP3107312B2 (ja) * | 1990-11-28 | 2000-11-06 | シャープ株式会社 | アクティブマトリクス表示装置 |
| JPH04343520A (ja) * | 1991-05-21 | 1992-11-30 | Mitsubishi Electric Corp | レベルシフト回路 |
| JP3079675B2 (ja) * | 1991-08-22 | 2000-08-21 | ソニー株式会社 | レベル変換回路 |
| JPH05113771A (ja) * | 1991-10-23 | 1993-05-07 | Sharp Corp | 液晶表示装置用のレベルシフタ回路 |
| JP2567179B2 (ja) * | 1992-03-18 | 1996-12-25 | 株式会社東芝 | レベル変換回路 |
| JPH05304462A (ja) * | 1992-04-24 | 1993-11-16 | Mitsubishi Electric Corp | レベル変換器 |
| FR2691307A1 (fr) * | 1992-05-18 | 1993-11-19 | Lausanne Ecole Polytechnique F | Circuit intermédiaire entre un circuit logique à basse tension et un étage de sortie à haute tension réalisés dans une technologie CMOS standard. |
| JP3374492B2 (ja) * | 1992-12-02 | 2003-02-04 | セイコーエプソン株式会社 | レベルシフト回路及びこれを用いた高電圧駆動回路 |
| JPH0774616A (ja) * | 1993-07-06 | 1995-03-17 | Seiko Epson Corp | 信号電圧レベル変換回路及び出力バッファ回路 |
| JPH0738583A (ja) | 1993-07-16 | 1995-02-07 | Furukawa Electric Co Ltd:The | データ通信システム |
| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| JP2759415B2 (ja) | 1993-11-05 | 1998-05-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW299897U (en) | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
| US5510748A (en) * | 1994-01-18 | 1996-04-23 | Vivid Semiconductor, Inc. | Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries |
| JP3407975B2 (ja) | 1994-05-20 | 2003-05-19 | 株式会社半導体エネルギー研究所 | 薄膜半導体集積回路 |
| EP0696024A3 (en) * | 1994-08-01 | 1996-08-21 | At & T Corp | Liquid crystal display control method and device |
| JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO1997005596A1 (en) * | 1995-07-28 | 1997-02-13 | Litton Systems Canada Limited | Integrated analog source driver for active matrix liquid crystal display |
| JP3647523B2 (ja) * | 1995-10-14 | 2005-05-11 | 株式会社半導体エネルギー研究所 | マトリクス型液晶表示装置 |
| JPH09129382A (ja) * | 1995-10-17 | 1997-05-16 | Internatl Business Mach Corp <Ibm> | 放電管回路異常検出装置及び情報処理システム |
| KR970059904A (ko) * | 1996-01-22 | 1997-08-12 | 김광호 | 마이컴을 이용한 영상뮤트 제어 장치 및 제어방법 |
-
1997
- 1997-07-17 JP JP20857097A patent/JP4036923B2/ja not_active Expired - Fee Related
-
1998
- 1998-07-15 KR KR1019980028526A patent/KR100635084B1/ko not_active Expired - Fee Related
- 1998-07-15 US US09/115,841 patent/US6292183B1/en not_active Expired - Lifetime
- 1998-07-17 DE DE19832297.6A patent/DE19832297B4/de not_active Expired - Fee Related
- 1998-07-17 TW TW087111683A patent/TW401583B/zh not_active IP Right Cessation
-
2001
- 2001-09-06 US US09/946,364 patent/US6525719B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1138447A (ja) | 1999-02-12 |
| DE19832297A1 (de) | 1999-01-21 |
| KR100635084B1 (ko) | 2007-01-31 |
| US6292183B1 (en) | 2001-09-18 |
| JP4036923B2 (ja) | 2008-01-23 |
| US6525719B2 (en) | 2003-02-25 |
| US20020008695A1 (en) | 2002-01-24 |
| KR19990013868A (ko) | 1999-02-25 |
| DE19832297B4 (de) | 2016-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW401583B (en) | Display device and drive circuit therefor | |
| JP7749790B2 (ja) | 半導体装置及び表示装置 | |
| KR102118311B1 (ko) | 반도체 장치 및 전자 기기 | |
| TWI888943B (zh) | 顯示裝置 | |
| TW536827B (en) | Semiconductor display apparatus and driving method of semiconductor display apparatus | |
| US7746311B2 (en) | Thin-film transistor circuit and a semiconductor display using the same | |
| TW522354B (en) | Display device and method of driving the same | |
| TW540020B (en) | Image display device and driving method thereof | |
| CN111433838A (zh) | 显示装置及电子设备 | |
| KR19990014088A (ko) | 액티브 매트릭스형 표시 장치 | |
| US10621904B2 (en) | Pixel circuit and method for driving the same, display panel and display device | |
| JP4096948B2 (ja) | レベルシフト回路、それを用いた電気光学装置、および、電子機器 | |
| JP2007183532A (ja) | 画素構造および液晶ディスプレイパネル | |
| US7623110B2 (en) | Systems for displaying images by utilizing horizontal shift register circuit for generating overlapped output signals | |
| JP2000004130A (ja) | 薄膜トランジスタ回路およびそれを用いた半導体表示装置 | |
| JP2006253870A (ja) | レベルシフタ回路、アクティブマトリクス基板、電気光学装置及び電子機器 | |
| JP2003309456A (ja) | 薄膜トランジスタ回路およびそれを用いた半導体表示装置 | |
| JP2007058230A (ja) | アクティブマトリクス型表示装置 | |
| JP2006243759A (ja) | 電気光学装置の駆動回路、データ線駆動回路、走査線駆動回路、電気光学装置、および電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |