DE19832297B4 - Anzeigevorrichtung und Treiberschaltkreis dafür - Google Patents

Anzeigevorrichtung und Treiberschaltkreis dafür Download PDF

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Publication number
DE19832297B4
DE19832297B4 DE19832297.6A DE19832297A DE19832297B4 DE 19832297 B4 DE19832297 B4 DE 19832297B4 DE 19832297 A DE19832297 A DE 19832297A DE 19832297 B4 DE19832297 B4 DE 19832297B4
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DE
Germany
Prior art keywords
circuit
supply voltage
liquid crystal
tft
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19832297.6A
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German (de)
English (en)
Other versions
DE19832297A1 (de
Inventor
Shunpei Yamazaki
Jun Koyama
Yutaka Shionoiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE19832297A1 publication Critical patent/DE19832297A1/de
Application granted granted Critical
Publication of DE19832297B4 publication Critical patent/DE19832297B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
DE19832297.6A 1997-07-17 1998-07-17 Anzeigevorrichtung und Treiberschaltkreis dafür Expired - Fee Related DE19832297B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20857097A JP4036923B2 (ja) 1997-07-17 1997-07-17 表示装置およびその駆動回路
JPP9-208570 1997-07-17

Publications (2)

Publication Number Publication Date
DE19832297A1 DE19832297A1 (de) 1999-01-21
DE19832297B4 true DE19832297B4 (de) 2016-10-20

Family

ID=16558380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19832297.6A Expired - Fee Related DE19832297B4 (de) 1997-07-17 1998-07-17 Anzeigevorrichtung und Treiberschaltkreis dafür

Country Status (5)

Country Link
US (2) US6292183B1 (enExample)
JP (1) JP4036923B2 (enExample)
KR (1) KR100635084B1 (enExample)
DE (1) DE19832297B4 (enExample)
TW (1) TW401583B (enExample)

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US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4576652B2 (ja) 1999-02-18 2010-11-10 ソニー株式会社 液晶表示装置
GB2349996A (en) * 1999-05-12 2000-11-15 Sharp Kk Voltage level converter for an active matrix LCD
US6545656B1 (en) * 1999-05-14 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame
JP2000347159A (ja) * 1999-06-09 2000-12-15 Hitachi Ltd 液晶表示装置
US6967633B1 (en) * 1999-10-08 2005-11-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US7348953B1 (en) 1999-11-22 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Method of driving liquid crystal display device
TW525122B (en) 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
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TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
JP4416901B2 (ja) 2000-03-14 2010-02-17 株式会社半導体エネルギー研究所 レベルシフタ
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
SG115378A1 (en) * 2000-05-31 2005-10-28 Toshiba Kk Circuit panel and flat-panel display device
KR100385459B1 (ko) * 2000-06-30 2003-05-27 천지득 씨아이이표색계를 이용한 알.지.비 바코드의 디코딩 알고리즘
JP3866070B2 (ja) 2000-10-20 2007-01-10 株式会社 日立ディスプレイズ 表示装置
JP2002236472A (ja) * 2001-02-08 2002-08-23 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
JP4785271B2 (ja) * 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP2003060199A (ja) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
WO2003107314A2 (en) * 2002-06-01 2003-12-24 Samsung Electronics Co., Ltd. Method of driving a shift register, a shift register, a liquid crystal display device having the shift register
DE10227332A1 (de) 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
CN100412630C (zh) * 2002-07-11 2008-08-20 精工爱普生株式会社 电光器件及其驱动装置、驱动方法和电子装置
KR100908654B1 (ko) * 2002-11-27 2009-07-21 엘지디스플레이 주식회사 레벨 쉬프터 및 그를 내장한 래치
KR100899628B1 (ko) * 2002-12-24 2009-05-27 엘지디스플레이 주식회사 게이트 고전압 배선 및 게이트 저전압 배선을 구비한액정표시패널
JP3974124B2 (ja) * 2003-07-09 2007-09-12 シャープ株式会社 シフトレジスタおよびそれを用いる表示装置
JP2005072264A (ja) * 2003-08-25 2005-03-17 Seiko Epson Corp トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器
US7274350B2 (en) * 2004-01-22 2007-09-25 Au Optronics Corp. Analog buffer for LTPS amLCD
US7355418B2 (en) 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US7319335B2 (en) 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US6833717B1 (en) 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US20050184407A1 (en) * 2004-02-20 2005-08-25 Takahiro Korenari Transistor circuit, thin film transistor circuit and display device
JP4869569B2 (ja) * 2004-06-23 2012-02-08 株式会社 日立ディスプレイズ 表示装置
KR100685814B1 (ko) * 2005-02-18 2007-02-22 삼성에스디아이 주식회사 스캔 드라이버 및 이를 구비한 평판 표시 장치
JP4821954B2 (ja) * 2005-03-25 2011-11-24 日本電気株式会社 アナログバッファ回路
US7323924B2 (en) * 2005-04-19 2008-01-29 Semiconductor Energy Laboratory Co., Ltd. Level shifter circuit
US7535238B2 (en) 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
JP4864408B2 (ja) * 2005-09-30 2012-02-01 シャープ株式会社 アクティブマトリクス基板
KR100714014B1 (ko) * 2005-12-13 2007-05-04 삼성에스디아이 주식회사 유기 발광 표시장치
TWI323788B (en) 2006-03-14 2010-04-21 Applied Materials Inc Method to reduce cross talk in a multi column e-beam test system
TW200746022A (en) * 2006-04-19 2007-12-16 Ignis Innovation Inc Stable driving scheme for active matrix displays
US7602199B2 (en) 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
CN101287329B (zh) * 2007-04-13 2011-04-20 群康科技(深圳)有限公司 显示装置
EP2477172A4 (en) * 2009-09-11 2016-03-23 Sharp Kk Active Matrix Substrate and Active Matrix Display Device
JP5101669B2 (ja) * 2010-08-02 2012-12-19 株式会社ジャパンディスプレイイースト 表示装置
TWI563488B (en) * 2016-02-01 2016-12-21 Sitronix Technology Corp Gate driving circuit
CN115295560B (zh) * 2022-08-05 2024-08-02 厦门天马显示科技有限公司 显示面板和显示装置

Citations (8)

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Publication number Priority date Publication date Assignee Title
US4403307A (en) * 1979-11-12 1983-09-06 Fujitsu Limited Semiconductor memory device
US4857763A (en) * 1985-01-26 1989-08-15 Kabushiki Kaisha Toshiba MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased
JPH04195123A (ja) * 1990-11-28 1992-07-15 Sharp Corp アクティブマトリクス表示装置
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US5272389A (en) * 1991-05-21 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Level shifter circuit
DE4231415C1 (de) * 1992-05-18 1993-12-23 Ecole Polytech Ein Schnittstellen-Schaltkreis zur Kopplung eines logischen Niedrigspannungs-Schaltkreises mit einem Hochspannungs-Ausgang, realisiert in einer Standard-CMOS-Technologie
US5510748A (en) * 1994-01-18 1996-04-23 Vivid Semiconductor, Inc. Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries
US5559464A (en) * 1993-07-06 1996-09-24 Seiko Epson Corporation Signal voltage level conversion circuit and output buffer circuit

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JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4403307A (en) * 1979-11-12 1983-09-06 Fujitsu Limited Semiconductor memory device
US4857763A (en) * 1985-01-26 1989-08-15 Kabushiki Kaisha Toshiba MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
JPH04195123A (ja) * 1990-11-28 1992-07-15 Sharp Corp アクティブマトリクス表示装置
US5272389A (en) * 1991-05-21 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Level shifter circuit
DE4231415C1 (de) * 1992-05-18 1993-12-23 Ecole Polytech Ein Schnittstellen-Schaltkreis zur Kopplung eines logischen Niedrigspannungs-Schaltkreises mit einem Hochspannungs-Ausgang, realisiert in einer Standard-CMOS-Technologie
US5559464A (en) * 1993-07-06 1996-09-24 Seiko Epson Corporation Signal voltage level conversion circuit and output buffer circuit
US5510748A (en) * 1994-01-18 1996-04-23 Vivid Semiconductor, Inc. Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries

Also Published As

Publication number Publication date
JPH1138447A (ja) 1999-02-12
DE19832297A1 (de) 1999-01-21
KR100635084B1 (ko) 2007-01-31
US6292183B1 (en) 2001-09-18
JP4036923B2 (ja) 2008-01-23
US6525719B2 (en) 2003-02-25
TW401583B (en) 2000-08-11
US20020008695A1 (en) 2002-01-24
KR19990013868A (ko) 1999-02-25

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8110 Request for examination paragraph 44
R018 Grant decision by examination section/examining division
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee