KR100635084B1 - 표시장치및그의구동회로 - Google Patents

표시장치및그의구동회로 Download PDF

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Publication number
KR100635084B1
KR100635084B1 KR1019980028526A KR19980028526A KR100635084B1 KR 100635084 B1 KR100635084 B1 KR 100635084B1 KR 1019980028526 A KR1019980028526 A KR 1019980028526A KR 19980028526 A KR19980028526 A KR 19980028526A KR 100635084 B1 KR100635084 B1 KR 100635084B1
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South Korea
Prior art keywords
channel
tft
electrically connected
drain
source
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Expired - Fee Related
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KR1019980028526A
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English (en)
Korean (ko)
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KR19990013868A (ko
Inventor
순페이 야마자키
준 고야마
유타카 시오노이리
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR19990013868A publication Critical patent/KR19990013868A/ko
Application granted granted Critical
Publication of KR100635084B1 publication Critical patent/KR100635084B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
KR1019980028526A 1997-07-17 1998-07-15 표시장치및그의구동회로 Expired - Fee Related KR100635084B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20857097A JP4036923B2 (ja) 1997-07-17 1997-07-17 表示装置およびその駆動回路
JP9-208570 1997-07-17

Publications (2)

Publication Number Publication Date
KR19990013868A KR19990013868A (ko) 1999-02-25
KR100635084B1 true KR100635084B1 (ko) 2007-01-31

Family

ID=16558380

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980028526A Expired - Fee Related KR100635084B1 (ko) 1997-07-17 1998-07-15 표시장치및그의구동회로

Country Status (5)

Country Link
US (2) US6292183B1 (enExample)
JP (1) JP4036923B2 (enExample)
KR (1) KR100635084B1 (enExample)
DE (1) DE19832297B4 (enExample)
TW (1) TW401583B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4053136B2 (ja) * 1998-06-17 2008-02-27 株式会社半導体エネルギー研究所 反射型半導体表示装置
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4576652B2 (ja) 1999-02-18 2010-11-10 ソニー株式会社 液晶表示装置
GB2349996A (en) * 1999-05-12 2000-11-15 Sharp Kk Voltage level converter for an active matrix LCD
US6545656B1 (en) * 1999-05-14 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame
JP2000347159A (ja) * 1999-06-09 2000-12-15 Hitachi Ltd 液晶表示装置
US6967633B1 (en) * 1999-10-08 2005-11-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US7348953B1 (en) 1999-11-22 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Method of driving liquid crystal display device
TW525122B (en) 1999-11-29 2003-03-21 Semiconductor Energy Lab Electronic device
TW493152B (en) * 1999-12-24 2002-07-01 Semiconductor Energy Lab Electronic device
TW507258B (en) * 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
JP4416901B2 (ja) 2000-03-14 2010-02-17 株式会社半導体エネルギー研究所 レベルシフタ
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
SG115378A1 (en) * 2000-05-31 2005-10-28 Toshiba Kk Circuit panel and flat-panel display device
KR100385459B1 (ko) * 2000-06-30 2003-05-27 천지득 씨아이이표색계를 이용한 알.지.비 바코드의 디코딩 알고리즘
JP3866070B2 (ja) 2000-10-20 2007-01-10 株式会社 日立ディスプレイズ 表示装置
JP2002236472A (ja) * 2001-02-08 2002-08-23 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
JP4785271B2 (ja) * 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP2003060199A (ja) * 2001-08-10 2003-02-28 Sanyo Electric Co Ltd 半導体装置とその製造方法
WO2003107314A2 (en) * 2002-06-01 2003-12-24 Samsung Electronics Co., Ltd. Method of driving a shift register, a shift register, a liquid crystal display device having the shift register
DE10227332A1 (de) 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
CN100412630C (zh) * 2002-07-11 2008-08-20 精工爱普生株式会社 电光器件及其驱动装置、驱动方法和电子装置
KR100908654B1 (ko) * 2002-11-27 2009-07-21 엘지디스플레이 주식회사 레벨 쉬프터 및 그를 내장한 래치
KR100899628B1 (ko) * 2002-12-24 2009-05-27 엘지디스플레이 주식회사 게이트 고전압 배선 및 게이트 저전압 배선을 구비한액정표시패널
JP3974124B2 (ja) * 2003-07-09 2007-09-12 シャープ株式会社 シフトレジスタおよびそれを用いる表示装置
JP2005072264A (ja) * 2003-08-25 2005-03-17 Seiko Epson Corp トランジスタの製造方法、トランジスタ、回路基板、電気光学装置及び電子機器
US7274350B2 (en) * 2004-01-22 2007-09-25 Au Optronics Corp. Analog buffer for LTPS amLCD
US7355418B2 (en) 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US7319335B2 (en) 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US6833717B1 (en) 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US20050184407A1 (en) * 2004-02-20 2005-08-25 Takahiro Korenari Transistor circuit, thin film transistor circuit and display device
JP4869569B2 (ja) * 2004-06-23 2012-02-08 株式会社 日立ディスプレイズ 表示装置
KR100685814B1 (ko) * 2005-02-18 2007-02-22 삼성에스디아이 주식회사 스캔 드라이버 및 이를 구비한 평판 표시 장치
JP4821954B2 (ja) * 2005-03-25 2011-11-24 日本電気株式会社 アナログバッファ回路
US7323924B2 (en) * 2005-04-19 2008-01-29 Semiconductor Energy Laboratory Co., Ltd. Level shifter circuit
US7535238B2 (en) 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
JP4864408B2 (ja) * 2005-09-30 2012-02-01 シャープ株式会社 アクティブマトリクス基板
KR100714014B1 (ko) * 2005-12-13 2007-05-04 삼성에스디아이 주식회사 유기 발광 표시장치
TWI323788B (en) 2006-03-14 2010-04-21 Applied Materials Inc Method to reduce cross talk in a multi column e-beam test system
TW200746022A (en) * 2006-04-19 2007-12-16 Ignis Innovation Inc Stable driving scheme for active matrix displays
US7602199B2 (en) 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
CN101287329B (zh) * 2007-04-13 2011-04-20 群康科技(深圳)有限公司 显示装置
EP2477172A4 (en) * 2009-09-11 2016-03-23 Sharp Kk Active Matrix Substrate and Active Matrix Display Device
JP5101669B2 (ja) * 2010-08-02 2012-12-19 株式会社ジャパンディスプレイイースト 表示装置
TWI563488B (en) * 2016-02-01 2016-12-21 Sitronix Technology Corp Gate driving circuit
CN115295560B (zh) * 2022-08-05 2024-08-02 厦门天马显示科技有限公司 显示面板和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555900A (ja) * 1991-08-22 1993-03-05 Sony Corp レベル変換回路
JPH05113771A (ja) * 1991-10-23 1993-05-07 Sharp Corp 液晶表示装置用のレベルシフタ回路
JPH05304462A (ja) * 1992-04-24 1993-11-16 Mitsubishi Electric Corp レベル変換器
JPH06318055A (ja) * 1992-12-02 1994-11-15 Seiko Epson Corp レベルシフト回路及びこれを用いた高電圧駆動回路
KR0122246Y1 (ko) * 1992-03-18 1999-10-01 사또오 후미오 레벨변환회로

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
JPH0738583B2 (ja) 1985-01-26 1995-04-26 株式会社東芝 半導体集積回路
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US5105187A (en) * 1990-04-18 1992-04-14 General Electric Company Shift register for active matrix display devices
JP3107312B2 (ja) * 1990-11-28 2000-11-06 シャープ株式会社 アクティブマトリクス表示装置
JPH04343520A (ja) * 1991-05-21 1992-11-30 Mitsubishi Electric Corp レベルシフト回路
FR2691307A1 (fr) * 1992-05-18 1993-11-19 Lausanne Ecole Polytechnique F Circuit intermédiaire entre un circuit logique à basse tension et un étage de sortie à haute tension réalisés dans une technologie CMOS standard.
JPH0774616A (ja) * 1993-07-06 1995-03-17 Seiko Epson Corp 信号電圧レベル変換回路及び出力バッファ回路
JPH0738583A (ja) 1993-07-16 1995-02-07 Furukawa Electric Co Ltd:The データ通信システム
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US5510748A (en) * 1994-01-18 1996-04-23 Vivid Semiconductor, Inc. Integrated circuit having different power supplies for increased output voltage range while retaining small device geometries
JP3407975B2 (ja) 1994-05-20 2003-05-19 株式会社半導体エネルギー研究所 薄膜半導体集積回路
EP0696024A3 (en) * 1994-08-01 1996-08-21 At & T Corp Liquid crystal display control method and device
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO1997005596A1 (en) * 1995-07-28 1997-02-13 Litton Systems Canada Limited Integrated analog source driver for active matrix liquid crystal display
JP3647523B2 (ja) * 1995-10-14 2005-05-11 株式会社半導体エネルギー研究所 マトリクス型液晶表示装置
JPH09129382A (ja) * 1995-10-17 1997-05-16 Internatl Business Mach Corp <Ibm> 放電管回路異常検出装置及び情報処理システム
KR970059904A (ko) * 1996-01-22 1997-08-12 김광호 마이컴을 이용한 영상뮤트 제어 장치 및 제어방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555900A (ja) * 1991-08-22 1993-03-05 Sony Corp レベル変換回路
JPH05113771A (ja) * 1991-10-23 1993-05-07 Sharp Corp 液晶表示装置用のレベルシフタ回路
KR0122246Y1 (ko) * 1992-03-18 1999-10-01 사또오 후미오 레벨변환회로
JPH05304462A (ja) * 1992-04-24 1993-11-16 Mitsubishi Electric Corp レベル変換器
JPH06318055A (ja) * 1992-12-02 1994-11-15 Seiko Epson Corp レベルシフト回路及びこれを用いた高電圧駆動回路

Also Published As

Publication number Publication date
JPH1138447A (ja) 1999-02-12
DE19832297A1 (de) 1999-01-21
US6292183B1 (en) 2001-09-18
JP4036923B2 (ja) 2008-01-23
US6525719B2 (en) 2003-02-25
TW401583B (en) 2000-08-11
US20020008695A1 (en) 2002-01-24
KR19990013868A (ko) 1999-02-25
DE19832297B4 (de) 2016-10-20

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