TW394793B - Non-corrosive cleaning composition for removing plasma etching residues - Google Patents
Non-corrosive cleaning composition for removing plasma etching residues Download PDFInfo
- Publication number
- TW394793B TW394793B TW086112763A TW86112763A TW394793B TW 394793 B TW394793 B TW 394793B TW 086112763 A TW086112763 A TW 086112763A TW 86112763 A TW86112763 A TW 86112763A TW 394793 B TW394793 B TW 394793B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma etching
- cleaning composition
- composition
- cleaning
- hydroxide
- Prior art date
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- 239000000203 mixture Substances 0.000 title abstract description 64
- 238000004140 cleaning Methods 0.000 title abstract description 52
- 238000001020 plasma etching Methods 0.000 title abstract description 31
- 230000009972 noncorrosive effect Effects 0.000 title abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 18
- -1 hydroxylammonium compound Chemical class 0.000 abstract description 10
- 150000007514 bases Chemical class 0.000 abstract description 5
- 239000004094 surface-active agent Substances 0.000 abstract description 5
- 239000003381 stabilizer Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 235000011114 ammonium hydroxide Nutrition 0.000 description 14
- 239000000908 ammonium hydroxide Substances 0.000 description 13
- 125000001453 quaternary ammonium group Chemical group 0.000 description 10
- 230000002378 acidificating effect Effects 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000003112 inhibitor Substances 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- 230000002079 cooperative effect Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical group ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002736 nonionic surfactant Substances 0.000 description 6
- 150000005846 sugar alcohols Chemical class 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- XMYXFZHMOVKTFV-UHFFFAOYSA-N NO.NO.NO.OC(CC(O)=O)(CC(O)=O)C(O)=O Chemical compound NO.NO.NO.OC(CC(O)=O)(CC(O)=O)C(O)=O XMYXFZHMOVKTFV-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- RBLWMQWAHONKNC-UHFFFAOYSA-N hydroxyazanium Chemical compound O[NH3+] RBLWMQWAHONKNC-UHFFFAOYSA-N 0.000 description 4
- WCYJQVALWQMJGE-UHFFFAOYSA-M hydroxylammonium chloride Chemical compound [Cl-].O[NH3+] WCYJQVALWQMJGE-UHFFFAOYSA-M 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000001841 imino group Chemical group [H]N=* 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 2
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical compound OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MPLDUBKZNAJOHZ-UHFFFAOYSA-N ONO.ONO.OS(O)(=O)=O Chemical compound ONO.ONO.OS(O)(=O)=O MPLDUBKZNAJOHZ-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229930188620 butyrolactone Natural products 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 2
- BBTAFKMPWVYCIC-UHFFFAOYSA-N hydroxylamine;oxalic acid Chemical compound ON.ON.OC(=O)C(O)=O BBTAFKMPWVYCIC-UHFFFAOYSA-N 0.000 description 2
- 231100001240 inorganic pollutant Toxicity 0.000 description 2
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 2
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 2
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 2
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910017758 Cu-Si Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- FSVCELGFZIQNCK-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)glycine Chemical compound OCCN(CCO)CC(O)=O FSVCELGFZIQNCK-UHFFFAOYSA-N 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 239000007998 bicine buffer Substances 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002894 chemical waste Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- VGYYSIDKAKXZEE-UHFFFAOYSA-L hydroxylammonium sulfate Chemical compound O[NH3+].O[NH3+].[O-]S([O-])(=O)=O VGYYSIDKAKXZEE-UHFFFAOYSA-L 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- 229960000278 theophylline Drugs 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/046—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
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Description
經濟部中央標準局員工消費合作社印製
第86112763號專利申請案 中文說明書修正頁(89年3 J ^4- A7 B7 五、發明説明（3) 蚀之抑制，其乃因電漿蝕刻殘留物之化學成份一般係類似 於該等基材中之金屬層。因此，於先前技藝之清潔組合物 中所包含之烷醇胺乃可能腐蝕電漿蝕刻殘留物及基材金屬 層兩者。再者，若未使用諸如異丙醇之後清潔漂清劑，則 腐钱可能會非常的嚴重。此外，其需注意者為有些類型之 腐蚀抑制劑乃傾向於阻礙電漿蝕刻殘留物之移除。因此， 目如為止其可用於迅速移除電漿触刻殘留物而不致造成金 屬層腐蚀之完美清潔用產品尚未被發展出。電漿蚀刻殘留 物移除之速度與基材金屬層之腐蝕抑制間總存在著平衡。 雖其之中未有任一專利揭示出本.發明组合物之用途，而 在光阻剝離劑/清潔劑專利申請範圍中之數.種其它專利其存 在如下。 授權於KantoKagaku之曰本專利申請案7_〇28254號中，其 係揭示出一種包含有糖醇，醇胺，水，及四級銨氫氧化物 之非腐蝕性光阻移除液。 已發表於PCT之專利申請案W0 88_〇5813號中，其係教導 含有丁内酯或己内酯，四級銨氫氧化物化合物，及可選擇 性添加之非離子性界面活性劑之正或負光阻剝離劑。 授權於Muraoka等人之美國專利案4,239,661號中，其係揭 示出一種包含有0.01%至20%之氫氧化三烷（羥烷基')銨水 溶液之表面處理劑。此劑在移除沈積於中間半導體產物表 面上之有機及無機污染物時乃有其用途。 授權於Miyashita等人之美國專利案4,9〇4,571號中，其係 教導含有溶劑（例如，水’醇，_，酮，及其類似物包 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） >裝丨— (請先閱讀背面之注意事項再填寫本頁) 訂 第86112763號專利申請案 中文說明書修正頁(89年3月） -89,·&·__2·_4-：- 五、發明説明（1 ) 發明背景 本發明係關於一種用在微電子學製造時之清潔組合物， 而更特定而言其係關於用在移除電漿蝕刻沈積於基材上之. 金屬層或金屬氧化物後形成在晶圓基材上之電漿蝕刻副產 物之非腐钱性清潔組合物。 於微電路製造時，正光阻係被當成中間遮蔽使用，並可 利用一系列之光蝕刻法與電漿蝕刻步驟使原網狀遮蔽®[樣 轉移至晶圓基材之上。於微電路製造之最終步騾中其一乃 是使圖樣化光阻膜由.基材移除。一般而言，此一步驟係可 以兩種方法對之產生影響。其中一種方法涉及濕式剥離步 騾，其中被光阻所覆蓋之基材係被帶至和主要包含有機溶 劑及胺之光阻剥離溶液接觸。然而，剥離溶液並無法完全 移去所有情形中之光阻膜，特別是其在製造期間是曝露於 紫外線照射和以電漿處理之情形中時尤然。有些光阻膜以 諸此之方式處理時乃變成高度交聯而其更難溶於剝離溶液 中。此外，使用於此等傳統濕式剥離法中之化學藥品在移 除以先前之電漿蝕刻步騾對含有i素氣體之金屬或金屬氧 化物層蝕刻後所形成之無機殘留材料有時會無效。 經濟部中央標準局員工消费合作社印裝 (請先閱讀背面之注意事項再填寫本頁) 一種移除光阻膜之可交替方法係涉及將光阻覆蓋之晶圓 曝露在氧氣電漿之中以使基材表面上之光阻膜燃燒，該方 法乃知曉為氧電漿灰化法。近來，氧電漿灰化法係在微電 路之製造方法中越加成為流行，因其係實施於真空之中因 而可預期的是其對空浮微粒或金屬污染較不敏感.。然而， 氧電漿灰化法對上述電漿蝕刻殘留物之移除乃並非完全有 -4- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 經濟部中央標準局員工消費合作社印製 第86112763號專利申請案 中文說明書修正頁(89年3月） A7 --ΡΛ 1 H B7 __ · 五、發明説明（5) ’ n(NR1R2R3OH)+(X-n) ⑴. 其中R!，R2及R3係個別選自於氫，具有i至4個碳原子之低 碳燒基，具有1至4個碳原子之低碳燒氧基，幾基及具有l 至4個碳原子之經羥基取代之低碳烷基，其條件為Ri，& 及R3申至少有兩者若不為氫、低碳烷基則即為低碳烷氧 基’且其中X為可溶於水並可與該四級按氫氧化物游離基 相容之陰離子部份；而η為X之價數且其由1至3 ;及 (C)至少一種選自於以胺及四級録氫.氧化物所組成族群之 驗性化合物。 其係被發覺不使基材金屬層腐飯之選擇性電漿蚀刻殘留 物之移除係可利用（1)對清潔溶液pH值之調整和（2)使用經 挑選之鹼性與酸性成份之結合而達成。也就是說，本發明 之清潔組合物中包含有鹼性成份與酸性成份之混合物以使 落液之pH值可設定在約2至約6之酸性範圍間。於此實例 中所用之鹼性成份係選自於胺及四級銨氫氧化物，然而， 酸性成份乃選自於羥銨鹽，其對電漿蝕刻殘留物之移除增 強上亦有所貢獻並能防止金屬氧化。因此，本發明之清潔 組合物並不需要腐蝕抑制劑。此清潔組合物係與此申請專 利範園中之先前清潔方法有相當大之差異。 在本發明组合物中有用之輕按化合物係包括諸如硝酸經 基銨（亦稱為HAN )，硫酸二羥基銨（亦稱為HAS )，磷酸羥 基按’氯化羥基銨’草酸羥基銨，擰檬酸羥基銨，及其類 七人物抱蘇'鹽之坑基取代衍生物亦可.加以使用：其例如經 基二乙錄鹽及其類似物。出現在本發明組合物中之羥銨化 • -8- 本紙張尺度it财(⑽} Α4_ (210X297公釐) '~~- _--^-----^1: _ 裝-------訂----- (請先閲讀背面之注意事項再填寫本頁} A7 B7 五、發明説明（2 ) 效 取而代之的是在移除此等電漿刻刻殘留物時乃需使其曝 露於特定之驗性溶液中才得以完成。清潔由電漿㈣後並 ,續經氧氣灰化所留下之電漿蝕刻殘留物之數種商業化產 抑目前已可取得。例如，EKC 265，其可由EKC科技公司 取知·’其爲一種以水，烷醇胺，兒茶酚及羥胺所組成之電 袅蝕刻清潔落液。諸此組合物係由Wai. M. Lee揭示於美國 專利案5,279,771號中。ACT gw係可由AsWand化學公司取 知，其爲另一種以水，烷醇胺及兒茶酚所组成之電漿蝕刻 π潔落液。於此兩種實例中，兒茶酚係被當成腐蝕抑制劑 使用。後剝離漂清用之R_1〇可由三菱氣體化學公司取得， 其亦爲以水，燒醇胺及糖醇（sugar alc〇h〇1)所組成，其中糖 醇乃當成腐姓抑制劑。 於此等商業化產品中，水與烷醇胺之組合物將不僅會溶 解電漿蝕刻殘留物，但其亦可腐蝕沈積於基材上之金屬層 圖樣。因此，使腐蝕抑制劑添加於該等產品中以防止基材 中之金屬層上產生不必要之腐蝕乃屬必需的。然而，因此 等產品具有U以上之pH値，其可能無视於腐蝕抑制劑之存 在而對特定之腐蝕敏感之金屬層進行腐蝕。其特別諸如鋁 或其合金（例如Al-Cu-Si)，氮化鈦，鈦鎢及類似之金屬層 乃特別對腐蝕敏感。因此，使適當之腐蝕抑制劑添加以防 止基材金屬層受腐蚀並使電漿蝕刻殘留物之移除不致受到 P礙乃屬必需的。然而，欲使下列雨種較佳之纟士果獲得平 衡乃有其困難：（1)有效之電漿蝕刻殘留物之移除及⑺腐 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央棣準局員工消費合作衽印製 第86im63號專利申請案 中文申S青專利範圍修正本
經濟部中央橾準局員工消費合作社印製 公毋·本 六、申請專利範圍 -— 394793
1 · 一種用以移除電漿蝕刻期間所形成之殘留物而具有pH 值為2至6之清潔組合物，其特徵在於： (A) 水； (B) 清潔组合物重量之i%至7〇%之至少一種羥基銨，選自 包括硝酸幾基錄硫酸二幾基銨，磷酸幾基録，草 酸經基銨，檸檬酸羥基銨，及氯化羥基銨；及 (C) 清潔組合物重量之0 01%至1〇%之至少—種鹼性化合 物’選自包括幾胺’單乙醇胺，二乙醇胺，三乙醇 胺，二乙二醇胺，N -羥基乙基六氫吡畊，氫氧化四 甲餒’氫氧化四乙銨，氫氧化三甲基羥乙基錄，氫 氧化甲基三（羥乙基）銨，氫氧化四（羥乙基）銨，及 氫氧化苄基三甲銨。 2 ·根據申請專利範圍第1項之清潔組合物，其特徵在於另 外存在一種螯合化合物，且係.選自包括三.乙四胺：， 2,2’ -〔〔（甲基-1_H -苯并三唑-i_基）甲基〕亞胺基〕 雙乙醇’及（2 -苯并禮唑基硫基）丁二酸。 3 ·根據申請專利範圍第1項之清潔組合物，其特徵在於另 外存在一種界面活性劑，且係選自非離子性界面活性 劑。 4 ·種使用根據申請專利範圍第1項之清潔組合物之方 法’其特徵在於該清潔組合物係在有機溶劑系光阻剥 離溶液後使用在半導體基材上。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210><297公麓） (請先閎讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製
第86112763號專利申請案 中文說明書修正頁(89年3 J ^4- A7 B7 五、發明説明（3) 蚀之抑制，其乃因電漿蝕刻殘留物之化學成份一般係類似 於該等基材中之金屬層。因此，於先前技藝之清潔組合物 中所包含之烷醇胺乃可能腐蝕電漿蝕刻殘留物及基材金屬 層兩者。再者，若未使用諸如異丙醇之後清潔漂清劑，則 腐钱可能會非常的嚴重。此外，其需注意者為有些類型之 腐蚀抑制劑乃傾向於阻礙電漿蝕刻殘留物之移除。因此， 目如為止其可用於迅速移除電漿触刻殘留物而不致造成金 屬層腐蚀之完美清潔用產品尚未被發展出。電漿蚀刻殘留 物移除之速度與基材金屬層之腐蝕抑制間總存在著平衡。 雖其之中未有任一專利揭示出本.發明组合物之用途，而 在光阻剝離劑/清潔劑專利申請範圍中之數.種其它專利其存 在如下。 授權於KantoKagaku之曰本專利申請案7_〇28254號中，其 係揭示出一種包含有糖醇，醇胺，水，及四級銨氫氧化物 之非腐蝕性光阻移除液。 已發表於PCT之專利申請案W0 88_〇5813號中，其係教導 含有丁内酯或己内酯，四級銨氫氧化物化合物，及可選擇 性添加之非離子性界面活性劑之正或負光阻剝離劑。 授權於Muraoka等人之美國專利案4,239,661號中，其係揭 示出一種包含有0.01%至20%之氫氧化三烷（羥烷基')銨水 溶液之表面處理劑。此劑在移除沈積於中間半導體產物表 面上之有機及無機污染物時乃有其用途。 授權於Miyashita等人之美國專利案4,9〇4,571號中，其係 教導含有溶劑（例如，水’醇，_，酮，及其類似物包 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） >裝丨— (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（4) 括有四級銨氫氧化物而其可溶解於以上溶劑之鹼性化合物 ，及可溶解於以上溶劑之硼氫化物化合物之印刷電路板光 阻剝離劑组合物。 授權於Dean等人之美國專利案5,〇91，103號中，其係敎導 —種含有：（A)n -燒基-2 - —氮伍圜酮；（B) 1，2 -丙二醇； 及（C)氫氧化四烷基銨之正光阻剝離劑组合物。 授權於Ward等人之美國專利案5，139,607號中，其係敎導 含有如下之正及負光阻剝離組合物：（A)四氳糠醇；（B)多 元醇（例如乙烯乙二醇或丙晞乙二醇）；（c)糠醇及環氧烯 之反應產物；（D)可溶於水之Bronstead鹼型氫氧化物化合物 (例如，鹼金屬氫氧化物，氫氧化銨及氫氧化四甲銨）；及 (E)水。組合物視需要而亦可含有高至1 %之非離子性界面 活性劑。 授權於A〇yama等人之美國專利案5，174,816號中，其係揭 不出一種用在移除乾蝕刻後遺留於鋁線型圖樣基材表面上 氯之组合物，其係包含〇〇1至15重量％四級銨氫氧化物之 水溶液，其乃諸如氫氧化三甲（2_羥乙基）銨，及〇 i至 重量％t糖或糖醇，其諸如木糖醇，甘露糖，葡萄糖及類 似物。 本發明係指向移除電漿蝕刻殘留物有用而其具有之pH値 約由2至6之非腐蝕性清潔組合物，其乃包含如下： (A) 水； (B) 至y種選自於具式（1 )而以羥錄鹽所组成族群之羥銨 化合物： (請先閲讀背面之注意事項再填寫本頁) ------------------— — — — — — #-------...t' I.----------------^__ -7- 經濟部中央標準局員工消費合作社印製 第86112763號專利申請案 中文說明書修正頁(89年3月） A7 --ΡΛ 1 H B7 __ · 五、發明説明（5) ’ n(NR1R2R3OH)+(X-n) ⑴. 其中R!，R2及R3係個別選自於氫，具有i至4個碳原子之低 碳燒基，具有1至4個碳原子之低碳燒氧基，幾基及具有l 至4個碳原子之經羥基取代之低碳烷基，其條件為Ri，& 及R3申至少有兩者若不為氫、低碳烷基則即為低碳烷氧 基’且其中X為可溶於水並可與該四級按氫氧化物游離基 相容之陰離子部份；而η為X之價數且其由1至3 ;及 (C)至少一種選自於以胺及四級録氫.氧化物所組成族群之 驗性化合物。 其係被發覺不使基材金屬層腐飯之選擇性電漿蚀刻殘留 物之移除係可利用（1)對清潔溶液pH值之調整和（2)使用經 挑選之鹼性與酸性成份之結合而達成。也就是說，本發明 之清潔組合物中包含有鹼性成份與酸性成份之混合物以使 落液之pH值可設定在約2至約6之酸性範圍間。於此實例 中所用之鹼性成份係選自於胺及四級銨氫氧化物，然而， 酸性成份乃選自於羥銨鹽，其對電漿蝕刻殘留物之移除增 強上亦有所貢獻並能防止金屬氧化。因此，本發明之清潔 組合物並不需要腐蝕抑制劑。此清潔組合物係與此申請專 利範園中之先前清潔方法有相當大之差異。 在本發明组合物中有用之輕按化合物係包括諸如硝酸經 基銨（亦稱為HAN )，硫酸二羥基銨（亦稱為HAS )，磷酸羥 基按’氯化羥基銨’草酸羥基銨，擰檬酸羥基銨，及其類 七人物抱蘇'鹽之坑基取代衍生物亦可.加以使用：其例如經 基二乙錄鹽及其類似物。出現在本發明組合物中之羥銨化 • -8- 本紙張尺度it财(⑽} Α4_ (210X297公釐) '~~- _--^-----^1: _ 裝-------訂----- (請先閲讀背面之注意事項再填寫本頁} A7 B7 394793 五、發明説明（6 ) 合較佳者係介於約1重量％至约70重量％之_内。 —可用在本發明組合物之胺係包括羥胺及諸如單乙醇胺， 二乙醇胺，三乙醇胺，二乙二醇胺ϋ基乙基六氯㈣ ’及類似I其它烷醇胺。 可用在本發明組合物之四級銨氫氧化物係包括具有甲基 ’乙基’丙基’ 丁基’幾乙基’爷基’及其组合物之氨氧 化四燒基録（例如.，諸如氫氧化四甲按（本文後中係稱之爲 Τ—ΜΑΗ) ’氫氧化四乙錢’氫氧化三甲趣基乙銨，氫氧化甲 二（遵乙基）錄，氫氧化四（遵乙基）餘，氫氧化爷基三甲按 及其類似物）。此外’與一種或數種之四級銨氫氧化物 組合之氫氧化銨亦可加以利用。 *現在本發明组合物中之鹼性化合物較佳者係介於約 〇.〇1重量°/〇至約10重量％之範圍内，而組合物之其餘主要 爲水。 本發明組合物中亦可選擇性的包含螫合安定劑以使羥銨 鹽安定化。適合之螫合安定劑乃包括有三乙烯四胺（本文 後乃稱之爲ΤΕΤΑ) ; 2,2，_〔〔甲基^^苯并三唑_卜基）甲 基〕亞胺基〕雙乙醇（其商標爲IRGAMET42) , (2_苯幷嘧 咬硫）丁二酸（其商標爲 IRGAC〇R 252)，tdeine，bicine，及 其Έ可落於水之螫合化合物。出現在本發明組合物中之安 足劑較佳者係介於本發明之清潔組合物總重量之約5重量 ppm至約50重量ppm之範圍内。 亦可選擇性的使界面活性劑包括在本發明之组合物中以 使其由基材處移除電漿姑刻殘留物之能力增強。其適合者 -9- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公着） (請先閱讀背面之注意事項再填寫本頁) 訂 ---^---： 經濟部中央標準局員工消費合作社印製 39479S A7 B7 五、發明説明（7) 係可選自於非離子型，陽離子型與陰離子型之界面活性劑 。出現在本發明组合物中之界面活性劑較佳者係介於本發 明之清潔组合物總重量之約0· 1重量ppm至約30重量ppm之 範圍内。 本發明之清潔组合物其係可和氧電漿灰化法或傳統之濕 式光阻剝離溶液結合後使用。本發明之清潔組合物乃並非 特定設計時使光阻膜由晶圓基材移除。本發明之清潔組合 物乃是設計用來使利用乾式或濕式剝離法移除光阻後之電 漿蝕刻殘留物移除。本發明之清潔組合物亦可用於取代有 機基溶劑之後剥離漂清，因其爲一種非腐蝕性及弱酸性之 水溶液，故其對環境將不致造成損害。因此，此清潔組合 物係可在一般之排洩系統中當成水溶性化學廢料來處理。 以下實例係進一步説明本發明。若非有另外之聲明，所 有之所佔部份及百分比係以重量％表示而所有之溫度係以 °C表示 實例1 經濟部中央標準局員工消費合作社印製 ----------1-¾衣——------1T (請先閱讀背面之注意事項再填寫本頁) 以取自於Olin公司之13 Μ HAN，80重量％之硝酸銨水溶 液與取自於Olin公司之OPD 262，2.39重量％ ΤΜΑΗ之水溶 液混合而製備出清潔溶液，其係以13 M HAN/OPD 262 = 70 / 30之重量比摻合。 使金屬I虫刻殘留物由基材處之清除係使用光阻 /Si02/TiN/Al-Si-Cu/Si多層基材以上述之清潔組合物完成，以 石刻法使該多層基材圖樣化，使其在電漿金屬蝕刻器中蝕 刻，並後續進行氧電漿灰化以使光阻之上層可完全移除。 -10- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 394793 、發明説明（8) 使以此方式製備之晶圓在60乇下浸潰於上述之清潔 '办 液中30分鐘且不對其携拌。隨後使其中之一晶圓浸潰於^ 丙醇中60秒鐘並進—步在室溫下使其浸潰於灌有氮氣氣泡 <去離子水中5分鐘。使在鍵結墊及通道結構兩者中之電 漿蚀刻殘留物完全移除而A1_Si_Cu及顶兩金屬層乃未受到 腐蝕。其特殊處在於此清潔溶液在具有和不具有以異 進行中間漂清之效能間顯示出任何差異。 實例2 - 4 頁 實例2_4係示出以列於表1中不同成份之清潔溶液組入 物以如同於實例1中户斤诚夕女斗、谢_ η n w '主.、 T所述心万式對相同晶圓結構所進行之 清__潔。 表 組合物* 1 2 3 4 13ΜΗΑΝ· ΠΡΓ>->^-> 70:30 50:50 30:70 稀釋70:30 註解 經 標 準 局 .員 費 合 作 印 製 *組合物係以重量比砉千.左I λ丄 心一 在實例4中，其70/30之混合物 係進一步以10 :丨之比率以去離子水稀釋。 **以效能而言，PERC係意指電漿姓刻殘留物之清 意指金屬腐蝕抑制。符號"+++”意指其爲完 ”一意指其爲良好;符號意指其位於邊緣:二 -11 - 本紙張尺度適财_家蘇7^7^ ( 21()χ297/^τ 394793 -------- 五、發明説明（9 ) ”意指其爲不滿意。 實例5 清潔落液之製備係利用取自於Aldrich化學公司之硫酸羥 銨（21.1公克）當成固體，使其溶解於69」公克之去離子水 使OPD 2½ ( 9.8公克）添入以將清潔溶液之値調整至 約 4.30 〇 測試電漿蝕刻殘留物之清潔及金屬腐蝕之方法乃如同於 描述在實例1中之方法；於此實例中並未有IPA漂清之實施。 SEM分析乃示出電漿蝕刻殘留物完全移除後A1_si_cu及 TiN金屬層並未受到腐蝕。 然上述經參考特定具體實例之本發明，其若未偏離本文 中所揭示出之發明概念，則本發明之諸多變化、修正與改 變係付而爲之其將爲顯明。因此，本發明將企圖含攝所有 包含於附帶申請專利範園之精神與寬廣範園中之諸此變化 、修正與改變。 (請先閲讀背面之注意事項再填寫本頁)
、1T - 經濟部中央標準局員工消費合作社印製 -12- 第86im63號專利申請案 中文申S青專利範圍修正本
經濟部中央橾準局員工消費合作社印製 公毋·本 六、申請專利範圍 -— 394793
1 · 一種用以移除電漿蝕刻期間所形成之殘留物而具有pH 值為2至6之清潔組合物，其特徵在於： (A) 水； (B) 清潔组合物重量之i%至7〇%之至少一種羥基銨，選自 包括硝酸幾基錄硫酸二幾基銨，磷酸幾基録，草 酸經基銨，檸檬酸羥基銨，及氯化羥基銨；及 (C) 清潔組合物重量之0 01%至1〇%之至少—種鹼性化合 物’選自包括幾胺’單乙醇胺，二乙醇胺，三乙醇 胺，二乙二醇胺，N -羥基乙基六氫吡畊，氫氧化四 甲餒’氫氧化四乙銨，氫氧化三甲基羥乙基錄，氫 氧化甲基三（羥乙基）銨，氫氧化四（羥乙基）銨，及 氫氧化苄基三甲銨。 2 ·根據申請專利範圍第1項之清潔組合物，其特徵在於另 外存在一種螯合化合物，且係.選自包括三.乙四胺：， 2,2’ -〔〔（甲基-1_H -苯并三唑-i_基）甲基〕亞胺基〕 雙乙醇’及（2 -苯并禮唑基硫基）丁二酸。 3 ·根據申請專利範圍第1項之清潔組合物，其特徵在於另 外存在一種界面活性劑，且係選自非離子性界面活性 劑。 4 ·種使用根據申請專利範圍第1項之清潔組合物之方 法’其特徵在於該清潔組合物係在有機溶劑系光阻剥 離溶液後使用在半導體基材上。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210><297公麓） (請先閎讀背面之注意事項再填寫本頁)
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| TW087107958A TW370691B (en) | 1996-09-06 | 1998-08-18 | Method for removing photoresist and plasma etch residues |
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| US08/709,053 US5780406A (en) | 1996-09-06 | 1996-09-06 | Non-corrosive cleaning composition for removing plasma etching residues |
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| TW394793B true TW394793B (en) | 2000-06-21 |
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| TW087107958A TW370691B (en) | 1996-09-06 | 1998-08-18 | Method for removing photoresist and plasma etch residues |
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| TW087107958A TW370691B (en) | 1996-09-06 | 1998-08-18 | Method for removing photoresist and plasma etch residues |
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| EP (1) | EP0944708B1 (zh) |
| JP (1) | JP4147320B2 (zh) |
| KR (1) | KR100323326B1 (zh) |
| AU (1) | AU4156497A (zh) |
| DE (1) | DE69718202T2 (zh) |
| TW (2) | TW394793B (zh) |
| WO (1) | WO1998010050A1 (zh) |
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| US8772214B2 (en) | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
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1997
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- 1997-08-22 AU AU41564/97A patent/AU4156497A/en not_active Abandoned
- 1997-08-22 EP EP97939489A patent/EP0944708B1/en not_active Expired - Lifetime
- 1997-08-22 KR KR1019997001828A patent/KR100323326B1/ko not_active IP Right Cessation
- 1997-08-22 JP JP51269898A patent/JP4147320B2/ja not_active Expired - Fee Related
- 1997-08-22 WO PCT/US1997/014758 patent/WO1998010050A1/en active IP Right Grant
- 1997-09-04 TW TW086112763A patent/TW394793B/zh not_active IP Right Cessation
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1998
- 1998-08-18 TW TW087107958A patent/TW370691B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8772214B2 (en) | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4147320B2 (ja) | 2008-09-10 |
| AU4156497A (en) | 1998-03-26 |
| EP0944708A4 (en) | 2001-09-19 |
| WO1998010050A1 (en) | 1998-03-12 |
| DE69718202D1 (de) | 2003-02-06 |
| JP2001501649A (ja) | 2001-02-06 |
| KR100323326B1 (ko) | 2002-02-06 |
| TW370691B (en) | 1999-09-21 |
| KR20000068454A (ko) | 2000-11-25 |
| EP0944708A1 (en) | 1999-09-29 |
| EP0944708B1 (en) | 2003-01-02 |
| US5780406A (en) | 1998-07-14 |
| DE69718202T2 (de) | 2003-11-13 |
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