TW343388B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TW343388B
TW343388B TW086102184A TW86102184A TW343388B TW 343388 B TW343388 B TW 343388B TW 086102184 A TW086102184 A TW 086102184A TW 86102184 A TW86102184 A TW 86102184A TW 343388 B TW343388 B TW 343388B
Authority
TW
Taiwan
Prior art keywords
electrically connected
electrode node
semiconductor device
conductive
semiconductor substrate
Prior art date
Application number
TW086102184A
Other languages
English (en)
Inventor
Yoichi Hida
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW343388B publication Critical patent/TW343388B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW086102184A 1996-06-21 1997-02-15 Semiconductor device TW343388B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8162068A JPH1012838A (ja) 1996-06-21 1996-06-21 半導体装置

Publications (1)

Publication Number Publication Date
TW343388B true TW343388B (en) 1998-10-21

Family

ID=15747488

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102184A TW343388B (en) 1996-06-21 1997-02-15 Semiconductor device

Country Status (5)

Country Link
US (2) US6034391A (zh)
JP (1) JPH1012838A (zh)
KR (1) KR100243895B1 (zh)
CN (1) CN1153297C (zh)
TW (1) TW343388B (zh)

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US6292050B1 (en) 1997-01-29 2001-09-18 Cardiac Pacemakers, Inc. Current and temperature compensated voltage reference having improved power supply rejection
US5998257A (en) * 1997-03-13 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry
US6207523B1 (en) * 1997-07-03 2001-03-27 Micron Technology, Inc. Methods of forming capacitors DRAM arrays, and monolithic integrated circuits
JP3178399B2 (ja) * 1997-12-04 2001-06-18 日本電気株式会社 半導体集積回路、その素子配置方法およびその製造方法
US6285050B1 (en) * 1997-12-24 2001-09-04 International Business Machines Corporation Decoupling capacitor structure distributed above an integrated circuit and method for making same
JP2000123592A (ja) * 1998-10-19 2000-04-28 Mitsubishi Electric Corp 半導体装置
WO2000051184A1 (fr) * 1999-02-23 2000-08-31 Hitachi, Ltd Dispositif a circuit integre en semiconducteur
EP1063013B1 (en) * 1999-06-24 2005-10-12 ENI S.p.A. Catalytic composition for the aromatization of hydrocarbons
JP2002042496A (ja) * 2000-07-26 2002-02-08 Matsushita Electric Ind Co Ltd 強誘電体メモリ
US6381491B1 (en) 2000-08-18 2002-04-30 Cardiac Pacemakers, Inc. Digitally trimmable resistor for bandgap voltage reference
DE10045692A1 (de) * 2000-09-15 2002-04-04 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen und Pufferkapazitäten
JP2002334577A (ja) * 2001-05-07 2002-11-22 Mitsubishi Electric Corp 半導体集積回路装置
US6552383B2 (en) * 2001-05-11 2003-04-22 Micron Technology, Inc. Integrated decoupling capacitors
JP2003332447A (ja) * 2002-05-13 2003-11-21 Mitsubishi Electric Corp 容量素子
JP2004119857A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 半導体記憶装置およびその製造方法
JP2004297028A (ja) * 2003-02-04 2004-10-21 Sharp Corp 半導体記憶装置
US7177135B2 (en) * 2003-09-23 2007-02-13 Samsung Electronics Co., Ltd. On-chip bypass capacitor and method of manufacturing the same
JP2005101609A (ja) * 2003-09-23 2005-04-14 Samsung Electronics Co Ltd オンチップバイパスキャパシタの製造方法及びチップ
JP2005123378A (ja) * 2003-10-16 2005-05-12 Sony Corp 半導体装置およびその製造方法
KR100534101B1 (ko) * 2004-01-08 2005-12-06 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 디커플링 캐패시터배치방법
JP4795670B2 (ja) * 2004-06-18 2011-10-19 三星電子株式会社 共有ディカップリングキャパシタンス
JP4969771B2 (ja) * 2004-07-12 2012-07-04 ソニー株式会社 固体撮像装置及びそのキャパシタ調整方法
JP4996046B2 (ja) 2004-08-30 2012-08-08 富士通セミコンダクター株式会社 半導体装置の中間電位生成回路
US7473979B2 (en) * 2006-05-30 2009-01-06 International Business Machines Corporation Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
JP2008077705A (ja) 2006-09-19 2008-04-03 Fujitsu Ltd 半導体記憶装置
JP2008147338A (ja) * 2006-12-08 2008-06-26 Nec Electronics Corp 半導体集積回路装置
KR20090083197A (ko) 2008-01-29 2009-08-03 삼성전자주식회사 컬러필터기판의 제조 방법
US20090236908A1 (en) * 2008-03-21 2009-09-24 Kun-Woo Park Reservoir capacitor and semiconductor memory device including the same
JP5700907B2 (ja) * 2008-06-26 2015-04-15 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
JP2010067661A (ja) * 2008-09-09 2010-03-25 Nec Electronics Corp 半導体装置
KR101444381B1 (ko) * 2008-09-30 2014-11-03 삼성전자주식회사 파워 디커플링 커패시터를 포함하는 반도체 메모리 장치 및그것의 제조 방법
US8143699B2 (en) * 2009-02-25 2012-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Dual-dielectric MIM capacitors for system-on-chip applications
US8604586B2 (en) * 2009-08-06 2013-12-10 Qualcomm Incorporated High breakdown voltage embedded MIM capacitor structure
JP5136544B2 (ja) * 2009-12-16 2013-02-06 三菱電機株式会社 半導体装置
JP2011165824A (ja) * 2010-02-08 2011-08-25 Nec Corp 半導体装置
JP2012027983A (ja) * 2010-07-23 2012-02-09 Elpida Memory Inc 半導体装置
JP2011119018A (ja) * 2011-01-13 2011-06-16 Renesas Electronics Corp 半導体装置
JP2015070368A (ja) * 2013-09-27 2015-04-13 三菱電機株式会社 半導体装置
US9607680B2 (en) * 2014-03-04 2017-03-28 Apple Inc. EDRAM/DRAM fabricated capacitors for use in on-chip PMUS and as decoupling capacitors in an integrated EDRAM/DRAM and PMU system
TWI774372B (zh) * 2021-05-14 2022-08-11 旺宏電子股份有限公司 內容可定址記憶體及其操作方法

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JPS589289A (ja) * 1981-07-09 1983-01-19 Mitsubishi Electric Corp Ｍｏｓダイナミツクメモリ
JPS6150282A (ja) * 1984-08-17 1986-03-12 Hitachi Ltd 電荷蓄積型半導体記憶装置
JP2659723B2 (ja) 1987-09-19 1997-09-30 株式会社日立製作所 半導体集積回路装置
JP2643298B2 (ja) * 1988-05-23 1997-08-20 三菱電機株式会社 半導体メモリのセンスアンプ駆動装置及びその駆動方法
US5032892A (en) * 1988-05-31 1991-07-16 Micron Technology, Inc. Depletion mode chip decoupling capacitor
JP2721909B2 (ja) * 1989-01-18 1998-03-04 三菱電機株式会社 半導体記憶装置
US4879631A (en) * 1989-01-18 1989-11-07 Micron Technology, Inc. Short-resistant decoupling capacitor system for semiconductor circuits
JPH0697682B2 (ja) * 1990-03-20 1994-11-30 株式会社東芝 半導体装置の製造方法
EP0469555B1 (en) * 1990-07-31 1996-04-17 Nec Corporation Charge storage capacitor electrode and method of manufacturing the same
JP2621609B2 (ja) * 1990-07-31 1997-06-18 日本電気株式会社 電荷蓄積容量を備えた半導体装置及びその製造方法
JPH04188869A (ja) * 1990-11-22 1992-07-07 Mitsubishi Electric Corp 接合型電界効果トランジスタとキャパシタとを含む半導体記憶装置およびその製造方法
US5274284A (en) * 1991-01-24 1993-12-28 Texas Instruments Incorporated Output buffer circuits with controlled Miller effect capacitance
JPH06215570A (ja) * 1993-01-21 1994-08-05 Mitsubishi Electric Corp １／２電源電圧発生回路
JP2842770B2 (ja) * 1993-09-29 1999-01-06 日鉄セミコンダクター株式会社 半導体集積回路およびその製造方法
JP3406127B2 (ja) 1995-09-04 2003-05-12 三菱電機株式会社 半導体装置
US5739576A (en) * 1995-10-06 1998-04-14 Micron Technology, Inc. Integrated chip multilayer decoupling capacitors

Also Published As

Publication number Publication date
JPH1012838A (ja) 1998-01-16
US6222223B1 (en) 2001-04-24
CN1169594A (zh) 1998-01-07
KR100243895B1 (ko) 2000-02-01
US6034391A (en) 2000-03-07
KR980006394A (ko) 1998-03-30
CN1153297C (zh) 2004-06-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees