TW328589B - Non-volatile ferroelectric memory device and driving method thereof - Google Patents

Non-volatile ferroelectric memory device and driving method thereof

Info

Publication number
TW328589B
TW328589B TW086109976A TW86109976A TW328589B TW 328589 B TW328589 B TW 328589B TW 086109976 A TW086109976 A TW 086109976A TW 86109976 A TW86109976 A TW 86109976A TW 328589 B TW328589 B TW 328589B
Authority
TW
Taiwan
Prior art keywords
memory device
ferroelectric memory
driving method
volatile ferroelectric
word line
Prior art date
Application number
TW086109976A
Other languages
English (en)
Inventor
Chung Yeon-Bae
Jeo Byung-Gil
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW328589B publication Critical patent/TW328589B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW086109976A 1996-12-13 1997-07-15 Non-volatile ferroelectric memory device and driving method thereof TW328589B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960065525A KR100224673B1 (ko) 1996-12-13 1996-12-13 불휘발성 강유전체 메모리장치 및 그의 구동방법

Publications (1)

Publication Number Publication Date
TW328589B true TW328589B (en) 1998-03-21

Family

ID=36727931

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109976A TW328589B (en) 1996-12-13 1997-07-15 Non-volatile ferroelectric memory device and driving method thereof

Country Status (6)

Country Link
US (1) US5978250A (zh)
JP (2) JP3847933B2 (zh)
KR (1) KR100224673B1 (zh)
DE (1) DE19732694B4 (zh)
GB (1) GB2320377B (zh)
TW (1) TW328589B (zh)

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DE19919359C2 (de) * 1999-04-28 2001-03-15 Siemens Ag Integrierter Speicher mit an gegenüberliegenden Seiten eines Zellenfeldes angeordneten Leseverstärkern
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Also Published As

Publication number Publication date
KR100224673B1 (ko) 1999-10-15
JP3847933B2 (ja) 2006-11-22
US5978250A (en) 1999-11-02
GB2320377A (en) 1998-06-17
DE19732694B4 (de) 2008-10-02
DE19732694A1 (de) 1998-06-18
JP4168056B2 (ja) 2008-10-22
JP2006134570A (ja) 2006-05-25
KR19980047083A (ko) 1998-09-15
GB9715910D0 (en) 1997-10-01
JPH10188575A (ja) 1998-07-21
GB2320377B (en) 2001-06-06

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