TW321794B - - Google Patents

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Publication number
TW321794B
TW321794B TW085111221A TW85111221A TW321794B TW 321794 B TW321794 B TW 321794B TW 085111221 A TW085111221 A TW 085111221A TW 85111221 A TW85111221 A TW 85111221A TW 321794 B TW321794 B TW 321794B
Authority
TW
Taiwan
Prior art keywords
capacitor
wiring
layer
film
anode electrode
Prior art date
Application number
TW085111221A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW321794B publication Critical patent/TW321794B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW085111221A 1995-10-27 1996-09-13 TW321794B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28095795A JP3853406B2 (ja) 1995-10-27 1995-10-27 半導体集積回路装置及び当該装置の製造方法

Publications (1)

Publication Number Publication Date
TW321794B true TW321794B (enExample) 1997-12-01

Family

ID=17632259

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111221A TW321794B (enExample) 1995-10-27 1996-09-13

Country Status (5)

Country Link
US (3) US6479899B1 (enExample)
JP (1) JP3853406B2 (enExample)
KR (1) KR19990067022A (enExample)
TW (1) TW321794B (enExample)
WO (1) WO1997015950A1 (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3941133B2 (ja) * 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
TW378345B (en) * 1997-01-22 2000-01-01 Hitachi Ltd Resin package type semiconductor device and manufacturing method thereof
US6316801B1 (en) 1998-03-04 2001-11-13 Nec Corporation Semiconductor device having capacitive element structure and multilevel interconnection structure and method of fabricating the same
JP4427108B2 (ja) 1998-03-27 2010-03-03 株式会社東芝 半導体装置及びその製造方法
WO2000008680A1 (en) * 1998-08-03 2000-02-17 Nec Corporation Vapor growth method for metal oxide dielectric film and vapor growth device for metal oxide dielectric material
US6844600B2 (en) * 1998-09-03 2005-01-18 Micron Technology, Inc. ESD/EOS protection structure for integrated circuit devices
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US7170115B2 (en) * 2000-10-17 2007-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and method of producing the same
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JP4688343B2 (ja) * 2001-05-16 2011-05-25 ルネサスエレクトロニクス株式会社 強誘電体メモリ装置
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KR100449253B1 (ko) * 2002-07-16 2004-09-18 주식회사 하이닉스반도체 커패시터 제조방법
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KR100505658B1 (ko) * 2002-12-11 2005-08-03 삼성전자주식회사 ＭＩＭ(Ｍｅｔａｌ-Ｉｎｓｕｌａｔｏｒ-Ｍｅｔａｌ)커패시터를 갖는 반도체 소자
JP2005093714A (ja) * 2003-09-17 2005-04-07 Nec Electronics Corp 半導体装置およびその製造方法
JP4446179B2 (ja) * 2005-02-02 2010-04-07 エルピーダメモリ株式会社 半導体装置の製造方法
JP4569924B2 (ja) * 2005-04-08 2010-10-27 エルピーダメモリ株式会社 半導体装置の製造方法
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7396750B2 (en) * 2005-09-28 2008-07-08 Northern Lights Semiconductor Corp. Method and structure for contacting two adjacent GMR memory bit
JP4698427B2 (ja) * 2006-01-12 2011-06-08 エルピーダメモリ株式会社 半導体装置の製造方法
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
US7933142B2 (en) 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US7542340B2 (en) 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
JP4600836B2 (ja) * 2006-08-09 2010-12-22 エルピーダメモリ株式会社 半導体記憶装置の製造方法
JP4545133B2 (ja) * 2006-11-09 2010-09-15 富士通株式会社 半導体記憶装置及びその製造方法
KR101406604B1 (ko) 2007-01-26 2014-06-11 마이크론 테크놀로지, 인코포레이티드 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 ｄｒａｍ 트랜지스터
US8518774B2 (en) * 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
JP2008251763A (ja) * 2007-03-30 2008-10-16 Elpida Memory Inc 半導体装置及びその製造方法
JP5091526B2 (ja) * 2007-04-06 2012-12-05 株式会社東芝 半導体記憶装置及びその製造方法
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8194487B2 (en) * 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
JP5613363B2 (ja) * 2007-09-20 2014-10-22 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置及びその製造方法
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
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US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8866254B2 (en) 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US9190494B2 (en) * 2008-02-19 2015-11-17 Micron Technology, Inc. Systems and devices including fin field-effect transistors each having U-shaped semiconductor fin
US7742324B2 (en) * 2008-02-19 2010-06-22 Micron Technology, Inc. Systems and devices including local data lines and methods of using, making, and operating the same
US7915659B2 (en) * 2008-03-06 2011-03-29 Micron Technology, Inc. Devices with cavity-defined gates and methods of making the same
US7898857B2 (en) 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US7808042B2 (en) 2008-03-20 2010-10-05 Micron Technology, Inc. Systems and devices including multi-gate transistors and methods of using, making, and operating the same
US8546876B2 (en) * 2008-03-20 2013-10-01 Micron Technology, Inc. Systems and devices including multi-transistor cells and methods of using, making, and operating the same
JP5401817B2 (ja) * 2008-03-25 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
US7969776B2 (en) 2008-04-03 2011-06-28 Micron Technology, Inc. Data cells with drivers and methods of making and operating the same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8076229B2 (en) * 2008-05-30 2011-12-13 Micron Technology, Inc. Methods of forming data cells and connections to data cells
US8148776B2 (en) 2008-09-15 2012-04-03 Micron Technology, Inc. Transistor with a passive gate
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
WO2010102106A2 (en) 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
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JP5439901B2 (ja) * 2009-03-31 2014-03-12 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
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US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
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FR2955419B1 (fr) * 2010-01-21 2012-07-13 St Microelectronics Crolles 2 Dispositif integre de memoire du type dram
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JP6336826B2 (ja) * 2014-06-04 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置
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KR102686706B1 (ko) * 2020-06-12 2024-07-22 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
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WO2025138209A1 (zh) * 2023-12-29 2025-07-03 声龙(新加坡)私人有限公司 一种芯片设计中实现引脚分配的方法及装置

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Also Published As

Publication number Publication date
US6479899B1 (en) 2002-11-12
JP3853406B2 (ja) 2006-12-06
US20020195641A1 (en) 2002-12-26
JPH09129844A (ja) 1997-05-16
WO1997015950A1 (en) 1997-05-01
US6432769B1 (en) 2002-08-13
KR19990067022A (ko) 1999-08-16
US6700152B2 (en) 2004-03-02

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