TW319912B - - Google Patents

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Publication number
TW319912B
TW319912B TW085115473A TW85115473A TW319912B TW 319912 B TW319912 B TW 319912B TW 085115473 A TW085115473 A TW 085115473A TW 85115473 A TW85115473 A TW 85115473A TW 319912 B TW319912 B TW 319912B
Authority
TW
Taiwan
Prior art keywords
film
heat treatment
silicon film
gas
silicon
Prior art date
Application number
TW085115473A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW319912B publication Critical patent/TW319912B/zh

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Classifications

    • H10P14/3808—
    • H10P14/3411—
    • H10P14/3806—
    • H10P36/03—

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW085115473A 1995-12-15 1996-12-14 TW319912B (oth)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34782095 1995-12-15

Publications (1)

Publication Number Publication Date
TW319912B true TW319912B (oth) 1997-11-11

Family

ID=18392821

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115473A TW319912B (oth) 1995-12-15 1996-12-14

Country Status (4)

Country Link
US (2) US5869363A (oth)
KR (2) KR100285019B1 (oth)
CN (1) CN1146955C (oth)
TW (1) TW319912B (oth)

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JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
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JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4242461B2 (ja) * 1997-02-24 2009-03-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844552B2 (ja) 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10256539A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体装置及びその製造方法
JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6241817B1 (en) * 1997-05-24 2001-06-05 Jin Jang Method for crystallizing amorphous layer
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP3844561B2 (ja) 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JPH1140498A (ja) * 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6218219B1 (en) 1997-09-29 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
TW408351B (en) * 1997-10-17 2000-10-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3223869B2 (ja) 1997-11-17 2001-10-29 日本電気株式会社 不純物濃度の定量方法
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
KR100325066B1 (ko) * 1998-06-30 2002-08-14 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터의제조방법
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7294535B1 (en) * 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
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US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
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US6475836B1 (en) * 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5088993B2 (ja) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
US8900362B2 (en) * 2010-03-12 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
CN110854076B (zh) * 2019-11-15 2022-05-31 西安微电子技术研究所 一种提高栅氧可靠性和抗辐射特性的HTO/SiO2复合栅CMOS器件及工艺

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Also Published As

Publication number Publication date
KR100285020B1 (ko) 2001-03-15
US5869363A (en) 1999-02-09
CN1146955C (zh) 2004-04-21
KR100285019B1 (ko) 2001-04-02
US20010026964A1 (en) 2001-10-04
CN1162188A (zh) 1997-10-15

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