TW297138B - - Google Patents

Download PDF

Info

Publication number
TW297138B
TW297138B TW085105336A TW85105336A TW297138B TW 297138 B TW297138 B TW 297138B TW 085105336 A TW085105336 A TW 085105336A TW 85105336 A TW85105336 A TW 85105336A TW 297138 B TW297138 B TW 297138B
Authority
TW
Taiwan
Prior art keywords
laser beam
substrate
area
scanning
laser
Prior art date
Application number
TW085105336A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW297138B publication Critical patent/TW297138B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H10P14/2922—
    • H10P14/3411—
    • H10P14/3802—
    • H10P14/3806—
    • H10P14/3816—
    • H10P14/382—
    • H10P34/42—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
TW085105336A 1995-05-31 1996-05-03 TW297138B (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15864595 1995-05-31

Publications (1)

Publication Number Publication Date
TW297138B true TW297138B (show.php) 1997-02-01

Family

ID=15676240

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105336A TW297138B (show.php) 1995-05-31 1996-05-03

Country Status (3)

Country Link
US (8) US5893990A (show.php)
KR (2) KR100302830B1 (show.php)
TW (1) TW297138B (show.php)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW297138B (show.php) * 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP3580033B2 (ja) * 1996-06-20 2004-10-20 ソニー株式会社 薄膜半導体装置及びその製造方法とレーザアニール装置
US6924860B2 (en) * 1997-11-05 2005-08-02 Hitachi, Ltd. Polarized UV light irradiation method for liquid crystal display device
KR100430231B1 (ko) * 1998-10-02 2004-07-19 엘지.필립스 엘시디 주식회사 레이저어닐장비
US6573531B1 (en) * 1999-09-03 2003-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
US6372289B1 (en) * 1999-12-17 2002-04-16 Corning Incorporated Process for manufacturing activated carbon honeycomb structures
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
AU2000240180A1 (en) * 2000-03-21 2001-10-03 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7662677B2 (en) * 2000-04-28 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
JP4588167B2 (ja) * 2000-05-12 2010-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
CA2389607A1 (en) * 2000-10-10 2002-04-18 The Trustees Of Columbia University Method and apparatus for processing thin metal layers
JP2002141301A (ja) 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
AU2002235144A1 (en) * 2000-11-27 2002-06-03 The Trustees Of Columbia University In The City Of New York Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2004520715A (ja) * 2001-04-19 2004-07-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 単一走査、連続動作の逐次的横方向結晶化を行う方法及びシステム
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
TW556350B (en) * 2001-08-27 2003-10-01 Univ Columbia A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
TWI279052B (en) * 2001-08-31 2007-04-11 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7112517B2 (en) * 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
JP4397571B2 (ja) 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US7078322B2 (en) * 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
TWI272666B (en) * 2002-01-28 2007-02-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI261358B (en) * 2002-01-28 2006-09-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2003084688A2 (en) * 2002-04-01 2003-10-16 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
US7379609B2 (en) * 2002-07-19 2008-05-27 Samsung Electronics Co., Ltd. Image processing apparatus and method for conversion between raster and block formats
AU2003258288A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
WO2004017382A2 (en) * 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
US7622370B2 (en) 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
JP4474108B2 (ja) * 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
KR20040021758A (ko) * 2002-09-04 2004-03-11 엘지.필립스 엘시디 주식회사 다결정 실리콘 박막트랜지스터 제조방법
US7919726B2 (en) * 2002-11-29 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
WO2004075263A2 (en) * 2003-02-19 2004-09-02 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4373115B2 (ja) * 2003-04-04 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
US7397592B2 (en) * 2003-04-21 2008-07-08 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing a thin film transistor
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI351713B (en) 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
KR100531416B1 (ko) 2003-09-17 2005-11-29 엘지.필립스 엘시디 주식회사 Ｓｌｓ 장비 및 이를 이용한 실리콘 결정화 방법
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP2005129769A (ja) * 2003-10-24 2005-05-19 Hitachi Ltd 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置
US7390704B2 (en) * 2004-06-16 2008-06-24 Semiconductor Energy Laboratory Co., Ltd. Laser process apparatus, laser irradiation method, and method for manufacturing semiconductor device
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
CN101288155A (zh) * 2005-08-16 2008-10-15 纽约市哥伦比亚大学事事会 高生产率的薄膜结晶过程
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
US7790563B2 (en) * 2007-07-13 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device and method for manufacturing semiconductor device
DE102007036262A1 (de) * 2007-08-02 2009-02-05 Robert Bosch Gmbh Radarsensor für Kraftfahrzeuge
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
JP2009135453A (ja) * 2007-10-30 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法、半導体装置及び電子機器
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US8546172B2 (en) 2008-01-18 2013-10-01 Miasole Laser polishing of a back contact of a solar cell
US8586398B2 (en) * 2008-01-18 2013-11-19 Miasole Sodium-incorporation in solar cell substrates and contacts
US8536054B2 (en) * 2008-01-18 2013-09-17 Miasole Laser polishing of a solar cell substrate
JP5503876B2 (ja) * 2008-01-24 2014-05-28 株式会社半導体エネルギー研究所 半導体基板の製造方法
US20110108108A1 (en) * 2008-02-29 2011-05-12 The Trustees Of Columbia University In The City Of Flash light annealing for thin films
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
WO2009108936A1 (en) * 2008-02-29 2009-09-03 The Trustees Of Columbia University In The City Of New York Lithographic method of making uniform crystalline si films
US20100081251A1 (en) * 2008-09-29 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
US8051679B2 (en) * 2008-09-29 2011-11-08 Corning Incorporated Laser separation of glass sheets
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
JP5324232B2 (ja) * 2009-01-08 2013-10-23 日東電工株式会社 半導体ウエハのアライメント装置
US8912102B2 (en) * 2009-03-02 2014-12-16 Globalfoundries Singapore Pte. Ltd. Laser annealing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
WO2011066548A1 (en) * 2009-11-30 2011-06-03 Uvt Tech Systems, Inc. Laser doping
KR101135537B1 (ko) * 2010-07-16 2012-04-13 삼성모바일디스플레이주식회사 레이저 조사 장치
GB2490143B (en) * 2011-04-20 2013-03-13 Rolls Royce Plc Method of manufacturing a component
JP2014060185A (ja) * 2012-09-14 2014-04-03 Toshiba Corp 半導体装置の製造方法および半導体装置
JP6925745B2 (ja) * 2017-11-30 2021-08-25 株式会社ディスコ ウェーハのレーザー加工方法
EP3691026B1 (de) * 2019-02-04 2021-05-19 VEGA Grieshaber KG Antennenanordnung

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4304978A (en) * 1978-10-05 1981-12-08 Coherent, Inc. Heat treating using a laser
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
JPS5674925A (en) * 1979-11-26 1981-06-20 Nec Corp Laser annealing system
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
JPS58127918A (ja) * 1982-01-25 1983-07-30 Minolta Camera Co Ltd デ−タ写し込み装置付カメラ
JPS58127318A (ja) 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> 絶縁層上への単結晶膜形成方法
DE3223898C2 (de) * 1982-06-26 1984-04-19 Standard Elektrik Lorenz Ag, 7000 Stuttgart Einstellbares optisches Dämpfungsglied
JPS60257511A (ja) * 1984-06-04 1985-12-19 Sony Corp 熱処理方法及びそれに用いる熱処理装置
JPS62216318A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd レ−ザアニ−ル装置
US4906071A (en) * 1987-03-31 1990-03-06 Matsushita Electric Industrial Co., Ltd. Liquid crystal display device and video projector incorporating same with particular driving circuit connection scheme
US4778263A (en) * 1987-05-29 1988-10-18 The United States Of America As Respresented By The Department Of Energy Variable laser attenuator
JPS6476715A (en) 1987-09-17 1989-03-22 Nec Corp Manufacture of polycrystalline semiconductor thin film
JPS6482517A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Epitaxial crystal growth method
US4775220A (en) * 1987-11-23 1988-10-04 Advanced Research And Applications Corporation Optical system with laser pulse energy control
JP2641101B2 (ja) 1988-04-12 1997-08-13 株式会社日立製作所 半導体装置の製造方法および装置
JPH0242717A (ja) * 1988-08-03 1990-02-13 Hitachi Ltd エネルギービーム照射方法
JP2995736B2 (ja) 1988-12-28 1999-12-27 ソニー株式会社 光ビームアニーリング装置
JP3033120B2 (ja) 1990-04-02 2000-04-17 セイコーエプソン株式会社 半導体薄膜の製造方法
JP3119480B2 (ja) 1990-06-16 2000-12-18 日本電気株式会社 半導体装置の製造方法
JP2973492B2 (ja) * 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
US5204773A (en) * 1990-10-01 1993-04-20 General Electric Company Ultraviolet light filter and filter system
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JP3114226B2 (ja) * 1991-03-25 2000-12-04 富士ゼロックス株式会社 薄膜トランジスタの製造方法
US5365875A (en) * 1991-03-25 1994-11-22 Fuji Xerox Co., Ltd. Semiconductor element manufacturing method
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
US5578520A (en) * 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
JP3244518B2 (ja) * 1991-07-30 2002-01-07 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法
JPH05198507A (ja) * 1991-09-21 1993-08-06 Semiconductor Energy Lab Co Ltd 半導体作製方法
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
KR100269350B1 (ko) * 1991-11-26 2000-10-16 구본준 박막트랜지스터의제조방법
JP3173854B2 (ja) * 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
US5424244A (en) * 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
KR100270618B1 (ko) * 1992-06-30 2000-12-01 윤종용 다결정 실리콘 박막의 제조방법
JP3320845B2 (ja) * 1992-07-06 2002-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2990969B2 (ja) * 1992-08-25 1999-12-13 富士ゼロックス株式会社 半導体素子の製造方法
JPH06140704A (ja) * 1992-10-26 1994-05-20 Mitsubishi Electric Corp レーザ光照射装置
US5413958A (en) * 1992-11-16 1995-05-09 Tokyo Electron Limited Method for manufacturing a liquid crystal display substrate
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH06332011A (ja) * 1993-05-18 1994-12-02 Sony Corp 半導体集合基板及び半導体装置
US5589406A (en) 1993-07-30 1996-12-31 Ag Technology Co., Ltd. Method of making TFT display
JPH0792501A (ja) 1993-07-30 1995-04-07 A G Technol Kk 画像表示用の基板とその製造方法、およびｔｆｔ表示素子
JPH0758399A (ja) * 1993-08-11 1995-03-03 Mitsubishi Cable Ind Ltd 増幅用光ファイバ
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
KR100333153B1 (ko) 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JP3411408B2 (ja) 1993-09-07 2003-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5719065A (en) * 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
TW264575B (show.php) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431034B2 (ja) * 1993-11-09 2003-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5529951A (en) * 1993-11-02 1996-06-25 Sony Corporation Method of forming polycrystalline silicon layer on substrate by large area excimer laser irradiation
US7081938B1 (en) * 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5620906A (en) 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions
KR100321541B1 (ko) * 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
JP3326654B2 (ja) * 1994-05-02 2002-09-24 ソニー株式会社 表示用半導体チップの製造方法
US6300176B1 (en) * 1994-07-22 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3469337B2 (ja) * 1994-12-16 2003-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
TW297138B (show.php) 1995-05-31 1997-02-01 Handotai Energy Kenkyusho Kk
JP3390603B2 (ja) 1995-05-31 2003-03-24 株式会社半導体エネルギー研究所 レーザー処理方法
US6008144A (en) 1998-02-02 1999-12-28 Industrial Technology Research Window shutter for laser annealing
JP2005167084A (ja) * 2003-12-04 2005-06-23 Fujitsu Ltd レーザ結晶化装置及びレーザ結晶化方法

Also Published As

Publication number Publication date
US20150056823A1 (en) 2015-02-26
KR100281364B1 (ko) 2001-02-01
US6534744B1 (en) 2003-03-18
KR960042943A (ko) 1996-12-21
KR100302830B1 (ko) 2001-11-30
US20070212826A1 (en) 2007-09-13
US5893990A (en) 1999-04-13
US20040232116A1 (en) 2004-11-25
US8835801B2 (en) 2014-09-16
US6919533B2 (en) 2005-07-19
US20030132205A1 (en) 2003-07-17
US20050239299A1 (en) 2005-10-27
US7223938B2 (en) 2007-05-29
US6982396B2 (en) 2006-01-03
US6156997A (en) 2000-12-05

Similar Documents

Publication Publication Date Title
TW297138B (show.php)
KR100388731B1 (ko) 반도체 장치의 제조 방법
US6165876A (en) Method of doping crystalline silicon film
US6989300B1 (en) Method for forming semiconductor films at desired positions on a substrate
US6002101A (en) Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam
US5858822A (en) Method for producing semiconductor device
KR100506956B1 (ko) 반도체장치형성방법및반도체장치제조방법
JP3586558B2 (ja) 薄膜の改質方法及びその実施に使用する装置
JP2004055771A (ja) 半導体薄膜の製造方法及びレーザ照射装置
JP3390603B2 (ja) レーザー処理方法
JP3927634B2 (ja) レーザーアニール方法及び薄膜トランジスタの作製方法
US5966596A (en) Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel
JP2001091970A (ja) 液晶ディスプレイパネルの製造方法
JPH0963984A (ja) レーザーアニール方法およびレーザーアニール装置
JP3512550B2 (ja) 半導体装置の作製方法
JP4312741B2 (ja) 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JP4001645B2 (ja) 結晶性珪素膜作製方法およびレーザー照射装置
JP2000068518A (ja) 薄膜トランジスタの製造方法
JP2001250790A (ja) レーザー処理方法
JP3612009B2 (ja) 半導体装置の作製方法
JP4317332B2 (ja) アクティブマトリクス型表示装置用基板の製造方法
JP2001257175A (ja) レーザー処理方法及びレーザー処理装置
JP2001244197A (ja) レーザー処理方法
JP3971152B2 (ja) 薄膜トランジスタの作製方法
JP2624223B2 (ja) 薄膜集積回路

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent