JPS5674925A - Laser annealing system - Google Patents

Laser annealing system

Info

Publication number
JPS5674925A
JPS5674925A JP15267479A JP15267479A JPS5674925A JP S5674925 A JPS5674925 A JP S5674925A JP 15267479 A JP15267479 A JP 15267479A JP 15267479 A JP15267479 A JP 15267479A JP S5674925 A JPS5674925 A JP S5674925A
Authority
JP
Japan
Prior art keywords
oscillator
laser
diameter
constitution
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15267479A
Other languages
Japanese (ja)
Inventor
Takeshi Yamane
Shiyougo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15267479A priority Critical patent/JPS5674925A/en
Publication of JPS5674925A publication Critical patent/JPS5674925A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To anneal a sample of a large area by a method wherein a laser light from an oscillator is introduced to an amplifier by propagating a multimode light fiber and an energy utilization efficiency is raised to obtain a uniform intensity distribution. CONSTITUTION:A laser beam from an oscillator 1 is introduced to a multimode light fiber 3. During passing through it, the laser beam is fully reflected at the core clad boundary surface and receives a high dimensional mode conversion. The light intensity distribution from the shooting terminal indicates almost no energy loss and an axial symmetry and a symmetrical trapezoid in a diameter direction. This beam is lead to a laser rod 6 for the amplification use through a lens and once more the diameter thereof is adjusted and projected onto a sample. With this constitution, a uniform annealing effect is obtained over the entire beam diameter. And further, no lateral mode control of an oscillator is required, as a result, a multilateral mode oscillator which can obtain a great output can be used.
JP15267479A 1979-11-26 1979-11-26 Laser annealing system Pending JPS5674925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15267479A JPS5674925A (en) 1979-11-26 1979-11-26 Laser annealing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15267479A JPS5674925A (en) 1979-11-26 1979-11-26 Laser annealing system

Publications (1)

Publication Number Publication Date
JPS5674925A true JPS5674925A (en) 1981-06-20

Family

ID=15545619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15267479A Pending JPS5674925A (en) 1979-11-26 1979-11-26 Laser annealing system

Country Status (1)

Country Link
JP (1) JPS5674925A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0228395A (en) * 1988-03-22 1990-01-30 Hitachi Constr Mach Co Ltd Method and device for removing conductor foil
US6919533B2 (en) 1995-05-31 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
CN111383916A (en) * 2018-12-28 2020-07-07 上海微电子装备（集团）股份有限公司 Laser annealing device for SiC substrate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0228395A (en) * 1988-03-22 1990-01-30 Hitachi Constr Mach Co Ltd Method and device for removing conductor foil
US6919533B2 (en) 1995-05-31 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US6982396B2 (en) * 1995-05-31 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US7223938B2 (en) 1995-05-31 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US8835801B2 (en) 1995-05-31 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
CN111383916A (en) * 2018-12-28 2020-07-07 上海微电子装备（集团）股份有限公司 Laser annealing device for SiC substrate

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