TW201910266A - 鎂系熱電變換材料、鎂系熱電變換元件、及鎂系熱電變換材料之製造方法 - Google Patents
鎂系熱電變換材料、鎂系熱電變換元件、及鎂系熱電變換材料之製造方法 Download PDFInfo
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- TW201910266A TW201910266A TW107116729A TW107116729A TW201910266A TW 201910266 A TW201910266 A TW 201910266A TW 107116729 A TW107116729 A TW 107116729A TW 107116729 A TW107116729 A TW 107116729A TW 201910266 A TW201910266 A TW 201910266A
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- magnesium
- thermoelectric conversion
- based thermoelectric
- conversion material
- raw material
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- 239000011777 magnesium Substances 0.000 title claims abstract description 129
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 128
- 229910052749 magnesium Inorganic materials 0.000 title claims abstract description 124
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 239000000463 material Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 26
- 238000005245 sintering Methods 0.000 claims description 65
- 239000000843 powder Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 43
- 239000002994 raw material Substances 0.000 claims description 43
- 229910019018 Mg 2 Si Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052787 antimony Inorganic materials 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 33
- 229910021338 magnesium silicide Inorganic materials 0.000 description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 13
- 238000010248 power generation Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000004453 electron probe microanalysis Methods 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017625 MgSiO Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229960000892 attapulgite Drugs 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052625 palygorskite Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
本發明係一種鎂系熱電變換材料,鎂系熱電變換元件,及鎂系熱電變換材料之製造方法,其中,係由鎂系化合物的燒結體所成之鎂系熱電變換材料(11),其特徵為在前述燒結體之剖面中,於鎂系化合物粒子之晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相(15)則不均勻,Si富含金屬相(15)之占有面積率則作為2.5%以上10%以下之範圍內,面積為1μm2以上之Si富含金屬相(15)的個數密度則作為1800個/mm2以上14000個/mm2以下之範圍內。
Description
本發明係有關對於熱電變換效率優越之鎂系熱電變換材料,使用此之鎂系熱電變換元件,及鎂系熱電變換材料之製造方法者。 本申請係依據申請於2017年8月15日之申請於日本之日本特願2017-156729號而主張優先權,而將此內容援用於此。
熱電變換元件係將席貝克效應,帕耳帖效應之熱與電性可相互變換之電子元件。席貝克效應係有將熱能量變換為電性能量的效果,當於熱電變換材料的兩端使溫度差產生時,產生起電力之現象。如此作為之起電力係經由熱電變換材料的特性而決定。在近年中,利用此效果之熱電發電之開發則為積極。
另一方面,帕耳帖效應係將電性能量變換為熱能量的效果,而於熱電變換材料的兩端形成電極等,在電極間使電位差產生時,於熱電變換材料的兩端產生有溫度差之現象。具有如此效果的元件係特別稱為帕耳帖元件,而利用於精密機器或小型冷藏庫等之冷卻或溫度控制(例如,參照專利文獻1)。
近年,使用利用席貝克效應之熱電發電裝置而有效利用廢熱的技術則被受注目。例如,加以提案:於汽車之引擎排氣氣體的排出管,或者在工廠或設備等之高溫的流體所流動之管的壁面,安裝使用如此席貝克元件的熱電發電裝置,於熱電發電裝置之另一方的面安裝散熱板等之熱交換構件而使其散熱者,將此等管的熱變換為電力而利用者。
作為如此之熱電發電裝置,係知道有例如,將內藏模組化之複數的熱電變換元件的筒狀之熱電發電裝置,垂直地配置於通過排氣氣體或冷卻水之一方的通路中,而於各熱電發電裝置之內部,形成通過冷卻水或排氣氣體的另一方的通路,利用並聯之複數的筒狀之熱電發電單元之內外的溫度差而進行熱電發電之構成(例如,參照專利文獻2)。
另外,知道有:於各內藏模組化之複數的熱電變換元件之筒狀的熱電發電裝置,安裝散熱片而作為卡匣化,並聯配置複數之卡匣化的熱電發電裝置之熱電發電系統(例如,參照專利文獻3)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本國特開2011-249742號公報(A) [專利文獻2]日本國特表2012-533972號公報(A) [專利文獻3]美國專利申請公開第2013/0186448號(A)說明書
[發明欲解決之課題]
但如上述專利文獻1~3所記載,使用於熱電發電元件之以往的熱電變換材料係有熱電變換效率低,為了使必要的電力產生而大面積的熱電發電元件則成為必要之問題。
本發明係有鑑於前述的情事所作為之構成,其目的為提供熱電變換效率高之鎂系熱電變換材料,使用此之鎂系熱電變換元件,及鎂系熱電變換材料的製造方法者。 [為了解決課題之手段]
為了解決上述課題,本發明係採取以下的形態。 本發明之一形態的鎂系熱電變換材料(以下,稱為「本發明之鎂系熱電變換材料」)係由鎂系化合物的燒結體所成之鎂系熱電變換材料,其特徵為在前述燒結體之剖面中,於鎂系化合物粒子之晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相則不均勻,前述Si富含金屬相之占有面積率則作為2.5%以上10%以下之範圍內,面積為1μm2
以上之前述Si富含金屬相的個數密度則作為1800個/mm2
以上14000個/mm2
以下之範圍內。
在由鎂系化合物的燒結體所成之鎂系熱電變換材料中,於鎂系化合物之晶粒邊界,加以形成MgO而存在。此MgO係電性傳導度低。因此,在通常之鎂系熱電變換材料中,在晶粒邊界之電性阻抗變高,而有鎂系熱電變換材料之熱電變換效率降低之虞。 在本發明之鎂系熱電變換材料中,於鎂系化合物之晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相則不均勻。此Si富含金屬相係電性傳導度則較MgO為高之故,在本發明之鎂系熱電變換材料中,在晶粒邊界之電性阻抗則成為較通常低。因而,成為可使鎂系熱電變換材料之熱電變換效率提升者。 另外,在本發明之鎂系熱電變換材料中,前述Si富含金屬相之占有面積率則作為2.5%以上10%以下之範圍內,面積為1μm2
以上之前述Si富含金屬相的個數密度則作為1800個/mm2
以上14000個/mm2
以下之範圍內。因此,電性傳導度比較高之Si富含金屬相則在鎂系化合物之燒結體的全體,均一且充分地加以分散,而成為可使鎂系熱電變換材料之熱電變換效率提升者。
在此,在本發明之鎂系熱電變換材料中,前述鎂系化合物係為Mgx
Siy
、Mg2
Si1-x
Gex
、Mg2
Si1-x
Snx
之任一者為佳。 此情況,經由於Mgx
Siy
、Mg2
Si1-x
Gex
、Mg2
Si1-x
Snx
所成之燒結體的晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相則不均勻之時,可得到對於熱電變換效率優越之鎂系熱電變換材料者。
另外,本發明之鎂系熱電變換材料係Li、Na、K、B、Al、Ga、In、N、P、As、Sb、Bi、Ag、Cu、Y之中,作為摻雜劑而至少含有1種以上亦可。 此情況,可作為特定之半導體型(即,n型或p型)之熱電變換材料者。
本發明之鎂系熱電變換元件係其特徵為具備:上述之鎂系熱電變換材料,和各接合於前述鎂系熱電變換材料之一方的面及對向之另一方的面之電極者。 如根據本發明之鎂系熱電變換元件,因由上述之鎂系熱電變換材料所成之故,在晶粒邊界之電性阻抗變低,可得到對於熱電變換效率優越之鎂系熱電變換元件者。
本發明之其他形態之鎂系熱電變換材料之製造方法(以下,稱為「本發明之鎂系熱電變換材料之製造方法」)係由鎂系化合物之燒結體所成之鎂系熱電變換材料之製造方法,其特徵為具備:於鎂系化合物之原料粉,混合矽氧化物而得到燒結原料粉的燒結原料粉形成工程,和加壓前述燒結原料粉之同時進行加熱而形成燒結體的燒結工程,在前述燒結工程中,使用以一對的電極部加壓前述燒結原料粉同時,進行通電之通電加熱法,而對於燒結時,以特定之時間間隔而變更一對之電極部的極性者。
如根據此構成之鎂系熱電變換材料之製造方法,在前述燒結工程中,作為使用以一對的電極部加壓前述燒結原料粉同時,進行通電之通電加熱法,而對於燒結時,以特定之時間間隔而變更一對之電極的極性之構成。因此,對於在一方的電極部之附近與另一方的電極部之附近的本身發熱狀況,不易產生差,而成為均一地加以燒結燒結體者。其結果,可使Si濃度則較鎂系化合物粒子的粒內為高之Si富含金屬相,比較均一地分散於燒結體全體,而可得到對於熱電變換效率優越之鎂系熱電變換材料者。
在此,在本發明之鎂系熱電變換材料之製造方法中,在前述燒結工程中,作為經由配置於前述燒結原料粉之外周側的加熱器,更且加熱前述燒結原料粉之構成者為佳。 此情況,因通電加熱之同時,經由配置於前述燒結原料粉之外周側的加熱器而進行加熱之故,可縮小燒結原料之內周側與外周側之溫度差,而可更均一地加熱燒結原料。 [發明效果]
如根據本發明,可提供熱電變換效率高之鎂系熱電變換材料,使用此之鎂系熱電變換元件,及鎂系熱電變換材料之製造方法者。
於以下,對於本發明之一實施形態之鎂系熱電變換材料,鎂系熱電變換元件,及鎂系熱電變換材料之製造方法,參照附加的圖面而加以說明。然而,以下所示之各實施形態係為了更理解發明的內容而具體地加以說明者,而只要未特別指定,並不限定本發明者。另外,在以下的說明所使用之圖面係為了容易了解本發明之特徵,方便上,有著擴大顯示成為要部的部分情況,而各構成要素的尺寸比率等則不限於與實際相同。
於圖1,顯示本發明之實施形態的鎂系熱電變換材料11,及使用此鎂系熱電變換材料11之鎂系熱電變換元件10。 此鎂系熱電變換元件10係具備:本實施形態的鎂系熱電變換材料11,和形成於此鎂系熱電變換材料11之一方的面11a及對向於此之另一方的面11b之金屬噴敷層18a、18b,和層積於此金屬噴敷層18a、18b之電極19a、19b。
金屬噴敷層18a、18b係加以使用鎳,銀,鈷,鎢,鉬等。此金屬噴敷層18a、18b係可經由通電燒結,電鍍,電著等而形成者。 電極19a、19b係自對於導電性優越之金屬材料,例如,銅或鋁等之板材加以形成。在本實施形態中,使用鋁的壓延板。另外,熱電變換材料11(金屬噴敷層18a、18b)與電極19a、19b係可經由焊Ag,鍍Ag等而接合者。
必且,鎂系熱電變換材料11係作為鎂系化合物的燒結體,而在本實施形態中,係作為摻雜劑而添加銻(Sb)於矽化鎂(Mg2
Si)之構成。例如,本實施形態之鎂系熱電變換材料11係作為在0.1at%以上2.0at%以下之範圍內而包含銻於Mg2
Si之組成。然而,在本實施形態之鎂系熱電變換材料11中,經由添加5價施體的銻之時,作為載體密度高之n型熱電變換材料。
然而,作為構成熱電變換材料11之材料係亦可同樣地使用Mg2
SiX
Ge1-X
、Mg2
SiX
Sn1-x
等,附加其他元素於矽化鎂之化合物者。 另外,作為為了將鎂系熱電變換材料11作為n型熱電變換元件之施體,係除了銻(Sb)以外,亦可使用鉍(Bi)、鋁(Al)、磷(P)、砷(As)等者。 另外,亦可將鎂系熱電變換材料11做成p型熱電變換元件,而此情況,作為受體,可經由添加、鋰(Li)或銀(Ag)等之摻雜劑而得到者。
並且,在本實施形態之鎂系熱電變換材料11中,如圖2所示,在燒結體的剖面中,於鎂系化合物(矽化鎂)的晶粒邊界,Si濃度則較鎂系化合物粒子的粒內為高而Si富含金屬相15則主要不均勻。 在此,在燒結體的剖面中,上述之Si富含金屬相15之占有的面積率則作為2.5%以上10%以下之範圍內。 更且,面積為1μm2
以上之Si富含金屬相15的個數密度則作為1800個/mm2
以上14000個/mm2
以下之範圍內。
然而,在鎂系化合物(矽化鎂)的燒結體所成之鎂系熱電變換材料11中,對於鎂系化合物(矽化鎂)的晶粒邊界,係成為存在有MgO者。此MgO係電性傳導度為低之故,晶粒邊界的電性阻抗則變高。 在本實施形態之鎂系熱電變換材料11中係如上述,經由於鎂系化合物(矽化鎂)的晶粒邊界,Si富含金屬相15不均一之時,晶粒邊界的電性阻抗則成為可能降低。 另一方面,Si之熱傳導率係在室溫為168W/(m・K),而矽化鎂(Mg2
Si)之熱傳導率係在室溫為9W/(m・K)。因此,當Si的含有量變多時,鎂系熱電變換材料11之熱傳導率則變高,而在鎂系熱電變換材料11之一端側與另一端側,溫度差則變小,而有熱電變換效率降低之虞。
在此,在Si富含金屬相15之面積率為不足2.5%中,有無法充分降低晶粒邊界之電性阻抗之虞。 另一方面,當Si富含金屬相15之面積率超過10%時,Si之含有量則變多,而有鎂系熱電變換材料11之熱傳導率變高之虞。 從以上之情況,在本實施形態中,將Si富含金屬相15之占有的面積率,規定為2.5%以上10%以下之範圍內。 然而,Si富含金屬相15之面積率的下限係作為3.5%以上者為佳,而作為4.5%以上者更佳。另外,Si富含金屬相15之面積率的上限係作為9%以下者為佳,而作為8%以下者更佳。
另外,在面積為1μm2
以上之Si富含金屬相15的個數密度為不足1800個/mm2
中,有無法充分降低晶粒邊界之電性阻抗之虞。 另一方面,在面積為1μm2
以上之Si富含金屬相15的個數密度為超過14000個/mm2
時,Si之含有量則變多,而有鎂系熱電變換材料11之熱傳導率變高之虞。 從以上的情況,在本實施形態中,將面積為1μm2
以上之Si富含金屬相15的個數密度,規定為1800個/mm2
以上14000個/mm2
以下之範圍內。 然而,面積為1μm2
以上之Si富含金屬相15的個數密度之下限係作為2500個/mm2
以上者為佳,而作為5000個/mm2
以上者更佳。另外,面積為1μm2
以上之Si富含金屬相15的個數密度之上限係作為12500個/mm2
以下者為佳,而作為10000個/mm2
以下者更佳。
另外,對於此Si富含金屬相15係含有極微量之Sb及Al等者為佳。當於不均一於鎂系化合物(矽化鎂)的晶粒邊界的Si富含金屬相15含有極微量之Sb及Al等時,經由此等元素之摻雜效果,晶粒邊界的電性阻抗則成為更降低者。然而,在本實施形態中,含於鎂系化合物(矽化鎂)的Sb則成為極微量含於Si富含金屬相15者。 在此所指之極微量係意味0.005at%~0.1at%。
於以下,對於本實施形態之鎂系熱電變換材料11之製造方法,參照圖3及圖4加以說明。
(矽化鎂粉末準備工程S01) 首先,製造成為鎂系熱電變換材料11之燒結體的母相之矽化鎂(Mg2
Si)的粉末。 在本實施形態中,矽化鎂粉末準備工程S01係具備:得到塊狀之矽化鎂的塊狀矽化鎂形成工程S11,和粉碎此塊狀的矽化鎂(Mg2
Si)而作為粉末之粉碎工程S12。
在塊狀矽化鎂形成工程S11中,各計量矽粉末,和鎂粉末,和摻雜劑而進行混合。例如,對於形成n型之熱電變換材料的情況,係作為摻雜劑,混合銻,鉍等5價的材料或鋁,另外,對於形成p型之熱電變換材料的情況,係作為摻雜劑,混合鋰或銀等之材料。在本實施形態中,為了得到n型之熱電變換材料而作為摻雜劑,使用銻,而其添加量係作為0.1at%以上2.0at%以下之範圍內。
並且,將此混合粉末,例如導入至坩堝,加熱至800℃以上1150℃以下之範圍內,再進行冷卻而使其固化。經由此,而得到例如塊狀的矽化鎂。 然而,從加熱時,少量的鎂則昇華之情況,在原料之計量時,對於Mg:Si=2:1化學計量組成而言,例如多放入5at%程度的鎂者為佳。
在粉碎工程S12中,將所得到之塊狀的矽化鎂,經由粉碎機而進行粉碎,形成矽化鎂粉。粉碎係在非活性氣體,例如Ar中進行者為佳。 在此,將矽化鎂粉的平均粒徑作為0.5μm以上100μm以下之範圍內者為佳。
然而,對於使用市售之矽化鎂粉,或添加有摻雜劑之矽化鎂粉的情況,亦可省略塊狀矽化鎂形成工程S11及粉碎工程S12。
(燒結原料粉形成工程S02) 接著,於所得到之矽化鎂粉,混合矽氧化物而得到燒結原料粉。 矽氧化物係可使用非晶形SiO2
、白矽石,石英,鱗石英,斜矽石,重矽石,賽佛特石,衝擊石英等之SiOx
(x=1~2)。 矽氧化物之混合量係0.5mol%以上13.0mol%以下之範圍內。更理想為作為0.7mol%以上7.0mol%以下即可。矽氧化物係作為粒径0.5μm以上100μm以下之粉末状即可。在本實施形態中,作為矽氧化物而使用中心粒徑20μm之SiO2
粉末。
(燒結工程S03) 接著,將如上述作為所得到之燒結原料粉,進行加壓同時進行加熱而得到燒結體。 在本實施形態中,在燒結工程S03中,使用圖4所示之燒結裝置(通電燒結裝置100)。
圖4所示之燒結裝置(通電燒結裝置100)係例如,具備:耐壓框體101,和減壓此耐壓框體101之內部的真空幫浦102,和配置於耐壓框體101內之中空筒形之碳模型103,和加壓充填於碳模型103內之燒結原料粉Q之同時,施加電流之一對的電極部105a、105b,和施加電壓於此一對的電極部105a、105b間之電源裝置106。另外,對於電極部105a、105b與燒結原料粉Q之間,係各加以配置碳板107,碳薄片108。除此以外,亦具有未圖示溫度計,變位計等。 另外,在本實施形態中,對於碳模型103之外周側係加以配設加熱器109。加熱器109係呈被覆碳模型103之外周側的全面地配置於四個側面。作為加熱器109係可利用碳製加熱器或鎳鉻電熱絲加熱器,鉬加熱器,康塔爾線加熱器,高頻率加熱器等。
在燒結工程S03中,首先,於如圖4所示之通電燒結裝置100之碳模型103內,充填燒結原料粉Q。碳模型103係例如,內部則由石墨薄片或碳薄片而加以被覆。並且,使用電源裝置106而流動直流電流於一對之電極部105a、105b間,經由流動電流至燒結原料粉Q之時,經由本身發熱而升溫(通電加熱)。另外,一對之電極部105a、105b之中,使可動側之電極部105a朝向燒結原料粉Q而移動,在與固定側之電極部105b之間,以特定的壓力而加壓燒結原料粉Q。另外,使加熱器109加熱。 經由此,燒結原料粉Q之本身發熱及來自加熱器109的熱,經由加壓,而使燒結原料粉Q燒結。
在本實施形態中,在燒結工程S03之燒結條件係作為焼結原料粉Q之焼結温度為800℃以上1020℃以下之範圍內,而在此燒結溫度的保持時間則作為0.15分以上5分以下之範圍內。另外,加壓負荷則作為20MPa以上50MPa以下之範圍內。 另外,耐壓框體101內之環境係作為氬環境等之非活性環境或真空環境即可。作為真空環境之情況係作為壓力5Pa以下即可。
在此,對於燒結原料粉Q之燒結溫度為不足800℃之情況,係無法充分地除去形成於燒結原料粉Q之各粉末表面的氧化膜,而殘存有氧化膜於晶粒邊界之同時,燒結體的密度則變低。因此,所得到的熱電變換材料之阻抗則有變高之虞。 另一方面,對於燒結原料粉Q之燒結溫度超過1020℃之情況,係矽化鎂之分解則在短時間進行,產生有組成偏差,阻抗上升之同時,而有席貝克係數降低之虞。 因此,在本實施形態中,將燒結工程S03之燒結溫度設定為800℃以上1020℃以下之範圍內。 然而,燒結工程S03之燒結溫度的下限係作為850℃以上者為佳,而作為900℃以上者為更佳。另一方面,燒結工程S03之燒結溫度的上限係作為1000℃以下者為佳,而作為980℃以下者為更佳。
另外,對於在燒結溫度的保持時間為不足0.15分之情況,係燒結成為不充分,而有所得到之熱電變換材料的阻抗變高之虞。 另一方面,對於在燒結溫度之保持時間超過5分鐘之情況,係矽化鎂之分解則進行,產生有組成偏差,阻抗上升之同時,而有席貝克係數降低之虞。 因此,在本實施形態中,將燒結工程S03之在燒結溫度之保持時間設定為0.15分以上5分以下之範圍內。 然而,燒結工程S03之在燒結溫度的保持時間之下限係作為0.15分以上者為佳,而作為0.5分以上者為更佳。另一方面,在燒結工程S03之在燒結溫度的保持時間之上限係作為5分以下者為佳,而作為3分以下者為更佳。
更且,對於在燒結工程S03之加壓負荷為不足20MPa之情況,係有密度未變高,而熱電變換材料的阻抗變高之虞。 另一方面,對於在燒結工程S03之加壓負荷為超過50MPa之情況,係有使用於燒結體之製作的碳模型之壽命變短,以及根據情況而產生破損之虞。 因此,在本實施形態中,將燒結工程S03之加壓負荷設定為20MPa以上50MPa以下之範圍內。 然而,燒結工程S03之加壓負荷的下限係作為20MPa以上者為佳,而作為25MPa以上者為更佳。另一方面,燒結工程S03之加壓負荷的上限係作為50MPa以下者為佳,而作為40MPa以下者為更佳。
並且,在此燒結工程S03中,在流動直流電流於焼結原料Q時,以特定的時間間隔而變更一方的電極部105a與另一方的電極部105b之極性。即,交互實施將一方的電極部105a作為陽極,及將另一方的電極部105b作為陰極而進行通電的狀態,和將一方的電極部105a作為陰極,及將另一方的電極部105b作為陽極而進行通電的狀態。在本實施形態中,將特定的時間間隔,設定為10秒以上300秒以下之範圍內。特定的時間間隔則在不足10秒鐘,在特定之時間內的燒結原料Q之溫度上升幅度為小而改變極性的效果為小。另一方面,特定的時間間隔則較300秒為長之情況,在特定之時間內的燒結原料Q之溫度上升幅度為大,一方的極性之效果則變大,而有無法充分取得均一性之虞之故。
經由以上之工程,加以製造本實施形態之鎂系熱電變換材料11。
如根據作為如以上構成之本實施形態之鎂系熱電變換材料11,因於鎂系化合物之晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相15則不均勻之故,在晶粒邊界的電性阻抗則變低。因而,成為可使鎂系熱電變換材料11之熱電變換效率提升者。 另外,因Si富含金屬相15之占有面積率則作為2.5%以上10%以下之範圍內,面積為1μm2
以上之Si富含金屬相15的個數密度則作為1800個/mm2
以上14000個/mm2
以下之範圍內之故,電性傳導度比較高之Si富含金屬相15則均一,且充分地加以分散,成為可使鎂系熱電變換材料11之熱電變換效率提升者。
如根據本實施形態之鎂系熱電變換材料11之製造方法,在燒結工程S03中,因使用以一對的電極部105a、105b而加壓燒結原料粉Q同時進行通電之通電加熱法,而對於燒結時係作為以特定的時間間隔而變更一對的電極部105a、105b之極性的構成之故,燒結體則成為均一地加以燒結者。 另外,在本實施形態中,因經由配置於燒結原料粉Q之外周側的加熱器109而自外周側亦加熱燒結原料粉Q之故,可更均一地加熱燒結原料者。 因而,可使Si濃度則較鎂系化合物粒子的粒內為高之Si富含金屬相15,分散於燒結體全體,而可得到對於熱電變換效率優越之鎂系熱電變換材料11者。
以上,對於本發明之實施形態已做過說明,但本發明係未加以限定於此等,而在不脫離其發明之技術思想範圍,可作適宜變更。 例如,在本實施形態中,作為構成如圖1所示之鎂系熱電變換元件之構成已做過說明,但並非限定於此者,而如採用本發明之鎂系熱電變換材料時,對於金屬噴敷層或電極之構造及配置等無特別限制。
更且,在本實施形態中,將作為摻雜劑而添加銻(Sb)之矽化鎂的粉末,作為燒結原料而使用之構成,加以說明過,但並非限定於此,例如,亦可作為摻雜劑而包含選自Li、Na、K、B、Al、Ga、In、N、P、As、Bi、Ag、Cu、Y之1種或2種以上之構成,而加上於Sb而含有此等之元素亦可。
另外,在本實施形態中,作為鎂系化合物而舉例說明過矽化鎂(Mg2
Si),但並非限定於此,而亦可為Mg2
Si1-x
Gex
、Mg2
Si1-x
Snx
之任一。 [實施例]
以下,對於欲確認本發明之效果而實施之實驗結果加以說明。
各計量純度99.9mass%的Mg(股份有限公司高純度化學研究所製、平均粒徑180μm)、純度99.99mass%的Si(股份有限公司高純度化學研究所製、平均粒徑300μm)、純度99.9mass%的Sb(股份有限公司高純度化學研究所製、平均粒徑300μm)。在研缽中混合此等粉末,再放入至鋁坩堝,以850℃2小時,在Ar-5vol%H2
中進行加熱。考慮來自經由Mg之昇華的Mg:Si=2:1之化學計量組成的偏差,將Mg多混合5at%。經由此,得到含有1at%摻雜劑之Sb的塊狀矽化鎂(Mg2
Si)。 接著,在研缽中將此塊狀的矽化鎂(Mg2
Si)做細搗碎,將此分級而得到平均粒徑為30μm之矽化鎂粉(Mg2
Si粉)。
另外,混合矽化鎂粉與矽氧化物粉(股份有限公司龍森製SiO2
粉、平均粒徑20μm),得到燒結原料粉。
將所得到之燒結原料粉,充填於以碳薄片被覆內側之碳模型。並且,經由圖4所示之燒結裝置(通電燒結裝置)100,以表1所示的條件進行通電燒結。
對於所得到之熱電變換材料,Si富含金屬相的面積率,面積為1μm2
以上之Si富含金屬相的個數密度,熱電特性,以如以下的步驟進行評估。
(Si富含金屬相的面積率及個數密度) 採取測定試料,研磨剖切面,使用EPMA裝置(日本電子股份有限公司製JXA-8800RL),以加速電壓15kV、電子束電流50nA、電子束徑1μm、映射測定點數200×200pixel之條件,進行EPMA觀察。 在EPMA分析中,經由在測定試料內的電子線之擴散,加以檢出較一次電子束徑為寬的範圍之元素資訊(元素濃度)。對於如Si之輕元素的情況,加以檢出自電子束直徑之3倍的3μmφ之元素資訊(元素濃度)。因此,進行映射時,檢出物的尺寸為小時,亦合併檢出有檢出物之其他,檢出物周邊的元素之濃度資訊,其平均的值則作為濃度。因此,在本發明中,Si富含金屬相係作為較矽化鎂粒子之粒內的平均Si濃度為高2wt%以上之Si濃度的範圍。 於圖5A及圖5B顯示EPMA觀察結果之一例。在圖5A及圖5B中,以白色表示較矽化鎂粒子之粒內的平均Si濃度為高2wt%以上之矽濃度高的相,測定Si富含金屬相的占有之面積率。在此,作為Si富含金屬相的占有之面積率(%)=(Si富含金屬相的面積)/(EPMA映射之1視野的面積)。 另外,依據圖5A及圖5B所示之映射圖,測定面積為1μm2
以上之Si富含金屬相的個數密度。在個數測定中,未考慮尺寸而作為連續之構成係將此作為1個之Si富含金屬相而計測。
另外,在經由EPMA觀察而進行觀察的試料中,對於含有Si濃度高之範圍之處而言,進行歐傑電子光譜分析,確認到Si濃度為高之範圍為Si金屬相者。使用歐傑分析裝置(ULVAC-PHI股份有限公司製PHI700Xi),觀察條件作為加速電壓10kV、電子束電流15nA、電子束徑15nm,蝕刻條件作為離子種Ar+
、加速電壓500V、電子束電流2.7nA、蝕刻時間10分、離子槍附近之真空度10mPa、分析處理室內壓力10-9
Torr。 其結果,如圖6所示,從對於顯示Si金屬相之1620eV加以觀察峰值之情況,經由EPMA觀察而進行觀察的Si濃度高之範圍係加以確認到Si金屬相者。
(熱電特性) 熱電特性係自燒結之熱電變換材料切出4mm×4mm×15mm之長方體,使用電熱特性評估裝置(ADVANCE RIKO製ZEM-3),求取在各試料之550℃的功率因數(PF)。
Si富含金屬相之面積率則作為不足2.5%,在面積為1μm2
以上之Si富含金屬相的個數密度則作為不足1800個/mm2
之比較例1,2中,在550℃的功率因數則變低。加以推斷在晶粒邊界的電性阻抗之降低則未充分貢獻之故。 Si富含金屬相之面積率則超過10%,在面積為1μm2
以上之Si富含金屬相的個數密度則超過14000個/mm2
之比較例3,係在550℃的功率因數則變低。此係加以推斷SiO2
產生變性之MgSiO及Si的含有量變多,而熱傳導率變高,席貝克係數變小之故。
對此,Si富含金屬相之占有面積率則作為2.5%以上10%以下之範圍內,在面積為1μm2
以上之前述Si富含金屬相的個數密度則作為1800個/mm2
以上14000個/mm2
以下之範圍內之本發明例1-6中,在550℃的功率因數則變高。
從以上之情況,如根據本發明例,加以確認到可提供對於熱電特性優越之熱電變換材料者。 [產業上之利用可能性]
如根據本發明,可提供熱電變換效率更高之熱電變換元件,經由此而可更有效地利用廢熱者。
10‧‧‧鎂系熱電變換元件
11‧‧‧鎂系熱電變換材料
15‧‧‧Si富含金屬相
19a、19b‧‧‧電極
圖1係顯示本發明之一實施形態之熱電變換材料及使用此之熱電變換元件的剖面圖。 圖2係顯示本發明之一實施形態之熱電變換材料的剖面觀察結果圖。 圖3係顯示本發明之一實施形態之熱電變換材料之製造方法的流程圖。 圖4係顯示在本發明之一實施形態之熱電變換材料的製造方法所使用之燒結裝置之一例的剖面圖。 圖5A係例示在實施例中,EPMA觀察鎂系熱電變換材料的剖面之結果的照片。 圖5B係例示在實施例中,EPMA觀察鎂系熱電變換材料的剖面之結果的照片。 圖6係顯示在實施例中,歐傑光譜分析Si富含金屬相之結果的圖。
Claims (6)
- 一種鎂系熱電變換材料,係由鎂系化合物的燒結體所成之鎂系熱電變換材料, 其特徵為在前述燒結體之剖面中,於鎂系化合物粒子之晶粒邊界,Si濃度則較前述鎂系化合物粒子的粒內為高而Si富含金屬相則不均勻, 前述Si富含金屬相之占有面積率則作為2.5%以上10%以下之範圍內, 面積為1μm2 以上之前述Si富含金屬相的個數密度則作為1800個/mm2 以上14000個/mm2 以下之範圍內。
- 如申請專利範圍第1項記載之鎂系熱電變換材料,其中,前述鎂系化合物係Mgx Siy 、Mg2 Si1-x Gex 、Mg2 Si1-x Snx 之任一。
- 如申請專利範圍第1項或第2項記載之鎂系熱電變換材料,其中,Li、Na、K、B、Al、Ga、In、N、P、As、Sb、Bi、Ag、Cu、Y之中,作為摻雜劑而至少含有1種以上者。
- 一種鎂系熱電變換元件,其特徵為具備:如申請專利範圍第1項至第3項任一項記載之鎂系熱電變換材料,和各加以接合於前述鎂系熱電變換材料之一方的面及對向之另一方的面之電極者。
- 一種鎂系熱電變換材料之製造方法,係由鎂系化合物之燒結體所成之鎂系熱電變換材料之製造方法,其特徵為具備: 於鎂系化合物之原料粉,混合矽氧化物而得到燒結原料粉的燒結原料粉形成工程,和加壓前述燒結原料粉之同時進行加熱而形成燒結體的燒結工程, 在前述燒結工程中,使用以一對的電極部加壓前述燒結原料粉同時,進行通電之通電加熱法,而對於燒結時,以特定之時間間隔而變更一對之電極部的極性者。
- 如申請專利範圍第5項記載之鎂系熱電變換材料之製造方法,其中,在前述燒結工程中,經由配置於前述燒結原料粉之外周側的加熱器,更且加熱前述燒結原料粉者。
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JP6798339B2 (ja) * | 2016-02-24 | 2020-12-09 | 三菱マテリアル株式会社 | マグネシウム系熱電変換材料の製造方法、マグネシウム系熱電変換素子の製造方法、マグネシウム系熱電変換材料、マグネシウム系熱電変換素子、熱電変換装置 |
JP2017156729A (ja) | 2016-03-04 | 2017-09-07 | 株式会社コシダカホールディングス | なりきりcv専用機 |
WO2018162036A1 (en) * | 2017-03-07 | 2018-09-13 | Toyota Motor Europe | Process for synthesis of mg2si/mgo nanocomposites |
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2017
- 2017-08-15 JP JP2017156729A patent/JP6981094B2/ja active Active
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2018
- 2018-05-11 WO PCT/JP2018/018373 patent/WO2019035253A1/ja unknown
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- 2018-05-11 CN CN201880047442.8A patent/CN110892537B/zh active Active
- 2018-05-11 EP EP18846157.8A patent/EP3671870B1/en active Active
- 2018-05-11 KR KR1020207002996A patent/KR102409289B1/ko active IP Right Grant
- 2018-05-17 TW TW107116729A patent/TWI768045B/zh active
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EP3671870A4 (en) | 2021-05-12 |
KR102409289B1 (ko) | 2022-06-14 |
TWI768045B (zh) | 2022-06-21 |
CN110892537B (zh) | 2023-11-07 |
JP6981094B2 (ja) | 2021-12-15 |
EP3671870B1 (en) | 2022-10-05 |
JP2019036623A (ja) | 2019-03-07 |
US20200227610A1 (en) | 2020-07-16 |
US11462671B2 (en) | 2022-10-04 |
WO2019035253A1 (ja) | 2019-02-21 |
CN110892537A (zh) | 2020-03-17 |
EP3671870A1 (en) | 2020-06-24 |
KR20200040751A (ko) | 2020-04-20 |
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