TW201608690A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW201608690A
TW201608690A TW104114799A TW104114799A TW201608690A TW 201608690 A TW201608690 A TW 201608690A TW 104114799 A TW104114799 A TW 104114799A TW 104114799 A TW104114799 A TW 104114799A TW 201608690 A TW201608690 A TW 201608690A
Authority
TW
Taiwan
Prior art keywords
insulating film
wiring
lower electrode
plug
film
Prior art date
Application number
TW104114799A
Other languages
English (en)
Chinese (zh)
Inventor
古橋隆寿
松本雅弘
Original Assignee
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 瑞薩電子股份有限公司 filed Critical 瑞薩電子股份有限公司
Publication of TW201608690A publication Critical patent/TW201608690A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
TW104114799A 2014-06-04 2015-05-08 半導體裝置 TW201608690A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014116279A JP6336826B2 (ja) 2014-06-04 2014-06-04 半導体装置

Publications (1)

Publication Number Publication Date
TW201608690A true TW201608690A (zh) 2016-03-01

Family

ID=54770234

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104114799A TW201608690A (zh) 2014-06-04 2015-05-08 半導體裝置

Country Status (5)

Country Link
US (1) US20150357400A1 (enExample)
JP (1) JP6336826B2 (enExample)
KR (1) KR20150139772A (enExample)
CN (1) CN105321931A (enExample)
TW (1) TW201608690A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730868B (zh) * 2020-08-06 2021-06-11 力晶積成電子製造股份有限公司 互補式金氧半導體影像感測器

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6356536B2 (ja) * 2014-08-25 2018-07-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20170170215A1 (en) * 2015-12-15 2017-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device structure with anti-acid layer and method for forming the same
JP6710096B2 (ja) * 2016-04-28 2020-06-17 ラピスセミコンダクタ株式会社 半導体装置の製造方法、及び半導体装置
CN108962879A (zh) * 2017-05-22 2018-12-07 联华电子股份有限公司 电容器及其制造方法
KR102591627B1 (ko) * 2018-08-17 2023-10-20 삼성전자주식회사 이미지 센서
CN111211092B (zh) * 2018-11-22 2023-02-17 中芯国际集成电路制造(北京)有限公司 半导体结构及其形成方法
US10910304B2 (en) * 2019-01-24 2021-02-02 Globalfoundries U.S. Inc. Tight pitch wirings and capacitor(s)
CN113192929B (zh) * 2020-01-14 2023-07-25 联华电子股份有限公司 电阻式存储器结构及其制作方法
US11587865B2 (en) * 2020-06-15 2023-02-21 Semiconductor Device Including Capacitor And Resistor Semiconductor device including capacitor and resistor
JP2021197526A (ja) * 2020-06-18 2021-12-27 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
KR102869773B1 (ko) 2021-05-25 2025-10-13 삼성전자주식회사 금속-절연체-금속 커패시터
US11894297B2 (en) * 2021-07-29 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal capacitor having electrodes with increasing thickness
JP7761524B2 (ja) * 2022-04-28 2025-10-28 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3104843B2 (ja) * 1994-08-19 2000-10-30 川崎製鉄株式会社 アンチヒューズ型半導体集積回路装置
JP3853406B2 (ja) * 1995-10-27 2006-12-06 エルピーダメモリ株式会社 半導体集積回路装置及び当該装置の製造方法
JP3516593B2 (ja) * 1998-09-22 2004-04-05 シャープ株式会社 半導体装置及びその製造方法
TW454330B (en) * 1999-05-26 2001-09-11 Matsushita Electronics Corp Semiconductor apparatus and its manufacturing method
JP3843708B2 (ja) * 2000-07-14 2006-11-08 日本電気株式会社 半導体装置およびその製造方法ならびに薄膜コンデンサ
JP3746979B2 (ja) * 2001-10-03 2006-02-22 富士通株式会社 半導体装置及びその製造方法
JP2003282726A (ja) * 2002-03-27 2003-10-03 Nec Electronics Corp 半導体装置及びその製造方法
JP2004303908A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2006253268A (ja) * 2005-03-09 2006-09-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100735521B1 (ko) * 2005-10-19 2007-07-04 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2008227344A (ja) * 2007-03-15 2008-09-25 Nec Electronics Corp 半導体装置及びその製造方法
CN101636834B (zh) * 2007-03-20 2012-02-08 富士通半导体股份有限公司 半导体器件及其制造方法
JP2008311606A (ja) * 2007-05-17 2008-12-25 Panasonic Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730868B (zh) * 2020-08-06 2021-06-11 力晶積成電子製造股份有限公司 互補式金氧半導體影像感測器

Also Published As

Publication number Publication date
CN105321931A (zh) 2016-02-10
US20150357400A1 (en) 2015-12-10
JP2015230959A (ja) 2015-12-21
JP6336826B2 (ja) 2018-06-06
KR20150139772A (ko) 2015-12-14

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