TW201546930A - 具有多站處理及前處理及/或後處理站之緊密的基板處理工具 - Google Patents
具有多站處理及前處理及/或後處理站之緊密的基板處理工具 Download PDFInfo
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Abstract
一種基板處理工具包含:設置在第一傳送平面中並圍繞中央凹孔的N個基板處理站,其中N係大於1的整數。該N個基板處理站的至少一者係建構以處理基板。M個基板處理站設置在第二傳送平面中並圍繞該中央凹孔,其中M係大於1的整數。該第二傳送平面設置成平行且位於該第一傳送平面之上方。一上工具部分,包含該M個基板處理站以及該N個基板處理站的第一部分。一轉動式下工具部分,相對於該上工具部分而旋轉。該N個基板處理站的第二部分和該轉動式下工具部分一起旋轉。
Description
本申請案主張美國臨時專利申請案第61/943729號之權益(申請日期為2014年2月24日)。上述之申請案以全文加入本申請案以做為參考。
本發明係關於基板處理工具,且更特別地係關於半導體處理工具。
基板處理系統(如半導體處理系統)用於在基板(如半導體晶圓)上,沉積或蝕刻薄膜層、金屬層、或其他類型的層。該基板處理系統包含一或更多的處理站。在基板處理系統中,基板的搬運在成本和產出量上具有顯著的影響。為了增加產出量與減少成本,基板需要以最有效率的方式且最少或沒有汙染地,通過不同的處理步驟而被處理。
在一些基板處理系統中,基板從基板匣被移動到反應器,之後回到基板匣或其他位置。為了提高產出量與減少基板搬運,單獨的反應器包含多個連續處理站。在此類型的基板處理系統中,基板被移動到反應器,並按順序地在處理站中被處理,之後被移動到基板匣或其他位置。此種處理裝置有助於藉由減少基板的運送以增加產出量。
雖然已開發出用以提供高產出量以及低材料成本的基板處理工具,但該等基板處理工具一般不在該相同工具上提供前或後處理的選擇。一些工具結合多站連續處理(MSSP)與單獨站模組(如前清潔或前處理模組)。然而,因為該等工具的許多子系統為了每個模組而再製,因此該工具的材料成本容易更高。此外,因為模組鋪展在中央的晶圓搬運器周圍,整體底面積(footprint)相當地大。
在其他特徵中,該N個基板處理站執行多站連續處理(MSSP)。該M個基板處理站執行該基板之前處理和後處理之至少一者。一機器手臂設置於該中央凹孔中,並建構以將基板傳送到至少N處理站的其中一站(在第一傳送平面中),以及到至少該M個基板處理站的其中一站(在第二傳送平面中)。
在其他特徵中,至少該M個基板處理站的其中一站執行由前清潔、前處理、成核,以及緩衝所組成的群體中選擇的功能。該N個基板處理站以等角度的偏移,設置在該中央凹孔周圍。該N個基板處理站以不規則角度的偏移,設置在該中央凹孔周圍。該第二傳送平片中的M個基板處理站係設置在第一傳送平面中的N個基板處理站上方,並相對第一傳送平面中的N個基板處理站而錯開。
在其他特徵中,該N個基板處理站的至少一者建構以至少執行原子層沉積(ALD)、電漿增強ALD (PEALD)、化學氣相沉積 (CVD)、以及電漿增強CVD (PECVD)的至少一者。每個該N個基板處理站包含和轉動式下工具部分一起移動的支座。該N個基板處理站的至少一者包含連接到該上工作部分的噴淋頭以及連接到該轉動式下工作部分的支座。
在其他特徵中,軸承面設置於上工具部分與轉動式下工具部分之間。該軸承面包含氣體軸承面以及一差動泵抽裝置。該上工具部分內的通道,將該N個基板處理站的至少一者連接到該中央凹孔。
在其他特徵中,該上工具部分內的M個通道將該M個基板處理站分別地連接到該中央凹孔。連通該M個基板處理站的至少一者之外部通道,允許外部地裝載基板到該M個基板處理站的至少一者中。該機器手臂建構以將基板傳送到在該第二傳送平面中的各該M個基板處理站。
在其他特徵中,一負載閘連接到該中央凹孔。一機器手臂建構以將基板從一匣傳送到該負載閘,以及從該負載閘傳送到該中央凹孔。該基板包括半導體晶圓。該軸承面包含磁性流體密封以及一差動泵抽裝置。
在其他特徵中,該N個基板處理站的至少一者建構以於基板上執行薄膜的沉積。該基板包括半導體晶圓。
從詳細的實施方式、申請專利範圍,以及圖示,本發明的實用性的更遠範圍將變得明顯。該詳細的實施方式與具體的例子僅是為了描述之目的,而非欲限制本發明之範圍。
多站連續處理(MSSP)經由複數之站16-1、16-2、…,以及16-M(合稱為站16)(其中M是大於1的整數)執行,該等站16設置在機器手臂12的周圍,並位在下傳送平面20中 (亦參看圖2)。此外,單獨基板站24-1、24-2、…,以及24-N(合稱為站24)(其中N是大於1的整數)設置於上傳送平面28中(亦參看圖2),該上傳送平面28設置在該下傳送平面20上方。一或更多的站24,藉由如狹縫閥的隔離閥25,與傳送腔室50的大氣及/或該等站的其餘者隔絕。該等站24可被隔絕或未被隔絕。
該等站16,以相等或不規則的角度的偏移,設置在該基板處理工具10的中央的周圍。該等站24,亦以相等或不規則的角度偏移,設置在該基板處理工具10的中央的周圍。該等站16可坐落在該等站24之間,且可相對於該等站24具有角度的偏移。雖然N和M在圖1中等於6,N和M可設定為其他數值。站24的例子包括前清潔、前處理、成核,以及緩衝,但也能使用其他類型的站。站24可使用於執行基板上的前及/或後處理。上方的站24與下方的站16包含共用的或單獨用的支撐系統,例如氣體輸送、泵抽、檢測儀表及/或電漿功率系統。
基板首先位於一匣34中。可使用一機器手臂及負載閘(大致標示於38)將基板從該匣34移動到該基板處理工具10。當處理完成時,該機器手臂及負載閘38將基板送回該匣34及/或其他匣39。由於站的硬體在垂直方向上的空間套疊,該分別下和上的傳送平面20與28,以相當小的距離分開。
現參考圖2與圖3,更詳細地顯示基板處理工具10的下傳送平面20與上傳送平面28。該機器手臂12設置在垂直凹孔50內,該垂直凹孔50限定在基板處理工具10的中央部分。
站16設置在下傳送平面20中。在一些實施例中,一或更多的站16包含一支座64以及一噴淋頭68,但亦能使用其他類型的站16。該下傳送平面20更包含一固定式部分70以及一轉動式部分72。一軸承面設置在介於該固定式部分70與該轉動式部分72間之一或更多位置73,俾以密封及/或相對地旋轉。
在一些應用中,該軸承面73包含一氣體軸承,該氣體軸承在內外兩側上(環形輸送裝置的內徑與外徑),利用加壓惰性氣體的配置,且有一橫越該氣體軸承的差動泵抽裝置。該差動泵抽裝置包含多個充氣室。該充氣室包含連接到不同真空程度的不同泵浦的溝槽,以形成密封。替代地,也可使用利用差動泵抽之磁性流體密封。
該轉動式部分72相對於該固定式部分70而旋轉,且充當一旋轉料架組件。若使用時,站16中的支座64裝附到下傳送平面20的轉動式部分72。若使用時,站16中的噴淋頭68裝附到下傳送平面20的固定式部分70。
基板通過一或更多的連接到垂直凹孔50的通道88,從機器手臂12中裝載到下傳送平面20中的站16。在基板上執行處理,之後該轉動式部分72(旋轉料架組件)旋轉到下傳送平面20中的站16的下一站。當該基板已在該等站16中被處理後,可視需求而使用機器手臂12將該基板移動到一或更多的上傳送平面28中的站24,以進行後處理,或移動到匣34或39的其中之一。又,可在站16中的MSSP之前於站24中執行前處理。
基板通過連接到垂直凹孔50的相應通道90-1、90-2、…,以及90-T(其中T是整數),從機器手臂12中裝載到上傳送平面28中的站24。一或更多的外部通道94允許直接地裝載到該站16及/或24。圖3中,站24-5顯示為包含一支座98。
該基板處理工具10的元件策略性地座落於三度空間中,使主要的元件得以巢狀聚集。此允許雙層結構(“double decker” architecture),該結構由於只有微小垂直位移,因此對於大基板直徑(例如450mm,但不限於450mm)是有用的。該基板處理工具10 亦具有提高的底面積使用率(對於大的基板直徑尤其重要)。藉由最少化分離的腔體數量,該基板處理工具10亦有助於改良成本結構。
作為不受限制的例子,該基板處理系統也可和其他製程一起使用,例如原子層沉積(ALD)、電漿增強ALD (PEALD)、化學氣相沉積 (CVD)、電漿增強CVD (PECVD),以及其他類型的製程。相似設計的基板處理系統也用於處理玻璃面板,應用在如太陽能光電板、平板顯示器,與電致變色節能窗(electrochromic window)。
上述之該設備/處理,可連同微影成形的工具或製程一起使用,例如用於半導體裝置、顯示器、LEDs、太陽能平板以及類似物的加工或製造。典型地但非必要地,此類工具/製程在共同的製造場所中被一起使用或操作。薄膜的微影成形典型地包括一些或全部下述之操作,每項操作藉由若干合理的工具而促成:(1)塗佈光阻劑於工件(即基板)上,使用旋塗或噴塗工具;(2)使光阻劑硬化,使用熱板或熔爐或UV硬化工具;(3)暴露該光阻劑到可見光或UV光或X光,使用如晶圓步進器的工具;(4)使該光阻劑顯影以選擇性地移除光阻劑並藉此使之圖案化,使用如濕式清潔台的工具;(5)轉移該光阻劑圖案到下層的薄膜或工件中,使用乾式或電漿輔助蝕刻工具;以及(6)移除該光阻劑,使用如RF或微波電漿光阻剝離器的工具。
先前敘述僅係本質上地說明,而非意欲限制本發明、其應用或使用。本發明廣泛的教示可以各式各樣的形式執行。因此,即使本發明包含具體的例子,本發明的真正範圍不應如此受限制,因為一但研讀圖示、說明書與下列之申請專利範圍,其他修改將變得顯而易見。為了清晰,該圖示中使用相同的參考數字以代表類似元件。如在此使用的文字「A、B和C其中至少一者」應解釋為使用非互斥邏輯符號OR的邏輯(A or B or C)。須了解在不改變本發明的原則之下,能依不同的順序(或同時) 執行一方法中一或更多的步驟。
10‧‧‧基板處理工具
12‧‧‧機器手臂
16‧‧‧基板處理站
20‧‧‧傳送平面
24‧‧‧基板處理站
25‧‧‧隔離閥
28‧‧‧傳送平面
34‧‧‧匣
38‧‧‧負載閘
39‧‧‧匣
50‧‧‧傳送室/垂直凹孔
64‧‧‧支座
68‧‧‧噴淋頭
70‧‧‧固定式部分
72‧‧‧轉動式部分
73‧‧‧軸承面
88‧‧‧通道
90‧‧‧通道
94‧‧‧通道
98‧‧‧支座
12‧‧‧機器手臂
16‧‧‧基板處理站
20‧‧‧傳送平面
24‧‧‧基板處理站
25‧‧‧隔離閥
28‧‧‧傳送平面
34‧‧‧匣
38‧‧‧負載閘
39‧‧‧匣
50‧‧‧傳送室/垂直凹孔
64‧‧‧支座
68‧‧‧噴淋頭
70‧‧‧固定式部分
72‧‧‧轉動式部分
73‧‧‧軸承面
88‧‧‧通道
90‧‧‧通道
94‧‧‧通道
98‧‧‧支座
圖1為一平面圖,根據本發明描繪一基板處理工具;
圖2為一立體圖,更詳細地描繪圖1之基板處理工具;以及
圖3為另一立體圖,更詳細地描繪圖1與圖2的基板處理工具。
10‧‧‧基板處理工具
16‧‧‧基板處理站
20‧‧‧傳送平面
24‧‧‧基板處理站
25‧‧‧隔離閥
28‧‧‧傳送平面
50‧‧‧傳送腔室/垂直凹孔
64‧‧‧支座
68‧‧‧噴淋頭
70‧‧‧固定式部分
72‧‧‧轉動式部分
73‧‧‧軸承面
88‧‧‧通道
90‧‧‧通道
94‧‧‧外部通道
Claims (22)
- 一種基板處理工具,包含: N個基板處理站,設置在第一傳送平面中並圍繞中央凹孔,其中N係大於1的整數,且其中該N個基板處理站的至少一者係建構以處理基板; M個基板處理站,設置在第二傳送平面中並圍繞該中央凹孔,其中M係大於1的整數,且其中該第二傳送平面設置成平行於該第一傳送平面且位於該第一傳送平面之上方; 一上工具部分,包含該M個基板處理站以及該N個基板處理站的第一部分;以及 一轉動式下工具部分,相對於該上工具部分而旋轉,其中該N個基板處理站的第二部分和該轉動式下工具部分一起旋轉。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站執行多站連續處理(MSSP)。
- 如申請專利範圍第1項之基板處理工具,其中該M個基板處理站執行基板的前處理和後處理之至少一者。
- 如申請專利範圍第1項之基板處理工具,更包含一設置在中央凹孔中的機器手臂,該機器手臂建構以將基板傳送到該第一傳送平面中之N處理站的至少一者、以及傳送到該第二傳送平面中之M個基板處理站的至少一者。
- 如申請專利範圍第3項之基板處理工具,其中該M個基板處理站的至少一者執行由前清潔、前處理、成核、以及緩衝所組成的群體中所選擇的一功能。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站設置成以等角度的偏移圍繞該中央凹孔。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站設置成以不規則角度的偏移圍繞該中央凹孔。
- 如申請專利範圍第1項之基板處理工具,其中該第二傳送平面中的M個基板處理站係設置在第一傳送平面中的N個基板處理站上方,並相對第一傳送平面中的N個基板處理站而錯開。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站的至少一者,建構以執行原子層沉積(ALD)、電漿增強ALD (PEALD)、化學氣相沉積 (CVD)、及電漿增強CVD (PECVD)的至少一者。
- 如申請專利範圍第1項之基板處理工具,其中各該N個基板處理站包含和該轉動式下工具部分一起移動的支座。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站的至少一者包含連接到該上工具部分的噴淋頭以及連接到該轉動式下工具部分的支座。
- 如申請專利範圍第1項之基板處理工具,更包含軸承面,設置於該上工具部分與該轉動式下工具部分之間。
- 如申請專利範圍第12項之基板處理工具,其中該軸承面包含氣體軸承面以及一差動泵抽裝置。
- 如申請專利範圍第1項之基板處理工具,更包含在該上工具部分中的通道,其將該N個基板處理站的至少一者連接到該中央凹孔。
- 如申請專利範圍第1項之基板處理工具,更包含在該上工具部分中的M個通道,其將該M個基板處理站分別地連接到該中央凹孔。
- 如申請專利範圍第1項之基板處理工具,更包含連通該M個基板處理站的至少一者的外部通道,其允許外部地裝載基板到該M個基板處理站的該至少一者中。
- 如申請專利範圍第4項之基板處理工具,其中該機器手臂建構以傳送基板到該第二傳送平面中之各該M個基板處理站。
- 如申請專利範圍第1項之基板處理工具,更包含: 一連接到該中央凹孔的負載閘;以及 一機器手臂,建構以將基板從一匣運送到該負載閘,以及從該負載閘運送到該中央凹孔。
- 如申請專利範圍第1項之基板處理工具,其中該基板包括半導體晶圓。
- 如申請專利範圍第12項之基板處理工具,其中該軸承面包含磁性流體密封以及一差動泵抽裝置。
- 如申請專利範圍第1項之基板處理工具,其中該N個基板處理站的至少一者係建構以於基板上執行薄膜的沉積。
- 如申請專利範圍第1項之基板處理工具,其中該基板包括半導體晶圓。
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KR102389920B1 (ko) | 2022-04-21 |
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US20150240360A1 (en) | 2015-08-27 |
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