CN109072433A - 用于防止空间ald处理腔室中的背侧沉积的装置 - Google Patents

用于防止空间ald处理腔室中的背侧沉积的装置 Download PDF

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CN109072433A
CN109072433A CN201780024476.0A CN201780024476A CN109072433A CN 109072433 A CN109072433 A CN 109072433A CN 201780024476 A CN201780024476 A CN 201780024476A CN 109072433 A CN109072433 A CN 109072433A
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gas
purification
support column
vacuum
base assembly
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CN109072433B (zh
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J·约德伏斯基
A·S·波利亚克
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Applied Materials Inc
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Abstract

描述了一种包含具有支撑柱的基座的基座组件。所述基座具有主体，所述主体具有顶表面与底表面。所述顶表面具有多个凹部。所述支撑柱连接至所述基座的底表面，以旋转所述基座组件。所述支撑柱包括支撑柱真空气室，所述支撑柱真空气室与所述基座的主体中的基座真空气室流体连通。所述支撑柱还包括净化气体管线，所述净化气体管线通过支撑柱延伸至所述基座的主体中的净化气体气室。

Description

用于防止空间ALD处理腔室中的背侧沉积的装置
技术领域
本公开大体涉及防止背侧沉积的装置与方法。更具体地，本公开涉及用于防止空间原子层沉积处理腔室中的基板的背侧上沉积的装置与方法。
背景技术
在空间原子层沉积(ALD)处理中，沉积气体可以接触基板的背面，从而导致背侧沉积。背侧沉积可能是使用多晶片基座布置的批处理腔室中的问题。当前批处理系统具有围绕晶片的外边缘多达30毫米幅度的背侧沉积。因此，在本领域中需要用于防止批处理腔室中的背侧沉积的装置与方法。
发明内容
本公开的一个或多个实施例针对包含具有支撑柱的基座的基座组件。基座具有主体，主体具有顶表面与底表面。顶表面中具有多个凹部。支撑柱连接至基座的底表面，以旋转基座组件。支撑柱包括支撑柱真空气室，支撑柱真空气室与基座的主体中的基座真空气室流体连通。支撑柱还包括净化气体管线，净化气体管线通过支撑柱延伸至基座的主体中的净化气体气室。
本公开的附加实施例针对包括基座的基座组件，基座具有主体，主体具有顶表面和底表面。顶表面中具有多个凹部。每个凹部在凹部的外周边区域内具有净化环，从而形成环形腔。支撑柱连接到基座的底表面以旋转基座组件。支撑柱包括：与基座的主体中的基座真空气室流体连通的支撑柱真空气室；净化气体管线，通过支撑柱延伸到基座的主体中的净化气体气室；主体内的多个径向净化气体馈送通道，其中两个径向净化气体馈送通道与净化气体气室和每个凹部的环形腔流体连通；以及多个径向真空馈送通道，其中，径向真空馈送通道与基座真空气室以及每个凹部流体连通。
本公开的进一步实施例针对基座组件，基座组件包含基座，基座具有主体，主体具有顶表面和底表面。顶表面中具有多个凹部。每个凹部在凹部的外周边区域内具有净化环，从而形成环形腔。支撑柱连接到基座的底表面以旋转基座组件。支撑柱包括：支撑柱真空气室，在所述支撑柱的顶部的中央部分中，该支撑柱真空气室与基座的主体中的基座真空气室流体连通；净化气体管线，该净化气体管线通过支撑柱延伸，从而在支撑柱真空气室下方的接合部处分开成两个上净化气体管线，上净化气体管线具有基本上相同的传导率，并且与基座的主体中的净化气体气室流体连通；主体内的多个径向净化气体馈送通道，其中，两个径向净化气体馈送通道与净化气体气室以及凹部中的每一个的环形腔流体连通，径向净化气体馈送通道中的每一个具有基本上相同传导率的不同尺寸的两个孔洞；多个径向净化气体馈送通道，其中一个径向真空馈送通道与基座真空气室以及每个凹部流体连通，径向真空馈送通道的每一个与凹部中的多个孔隙流体连通；每个凹部中的净化环，净化环包含第一压缩间隙与第二压缩间隙，第一压缩间隙形成第一环状气室，以增加第一环状气室中的压力均匀性，第二压缩间隙形成第二环状气室，以定义离开第二环状气室的气体的环隙流速。
附图说明
为了可以详细理解本公开的上述特征的方式可参照实施例得到以上简要概括的本公开的更具体的描述，这些实施例中的一些在附图中示出。然而，应注意附图仅示出本公开的典型实施例，并且因此不被视为限定本公开的保护范围，本公开可允许其他等效实施例。
图1示出根据本公开的一个或多个实施例的批处理腔室的横截面图；
图2示出根据本公开的一个或多个实施例的批处理腔室的局部透视图；
图3示出根据本公开的一个或多个实施例的批处理腔室的示意图；
图4示出根据本公开的一个或多个实施例的用于批处理腔室中的楔形气体分配组件的一部分的示意图；
图5示出根据本公开的一个或多个实施例的批处理腔室的示意图；
图6示出根据本公开的一个或多个实施例的基座组件的局部横截面图；
图7示出根据本公开的一个或多个实施例的基座的透视图；
图8示出根据本公开的一个或多个实施例的净化环的局部侧视图；以及
图9示出根据本公开的一个或多个实施例的基座的局部俯视图。
具体实施方式
在描述本公开的几个示例性实施例之前，应理解，本公开并不限于在以下描述中阐述的构造或处理步骤的细节。本公开能够具有其他实施例，并能够以各种方式实践或执行。
如本文所使用的“基板”是指在制造处理期间在其上执行膜处理的基板上所形成的任何基板或材料表面。例如，取决于应用，可以在其上执行处理的基板表面包括材料，例如硅、氧化硅、应变硅、绝缘体硅(SOI)、掺碳氧化硅、非晶硅、掺杂硅、锗、砷化镓、玻璃、蓝宝石，以及任何其他材料，例如金属、金属氮化物、金属合金、及其他导电材料。基板包括但不限于半导体晶片。基板可以暴露于预加工处理，以研磨、蚀刻、还原、氧化、羟基化、退火、和/或烘烤基板表面。除了直接在基板本身的表面上的膜处理之外，在本公开中，所公开的任何膜处理步骤也可以在基板上所形成的底层上执行，如下面更详细公开，而术语“基板表面”旨在包括如上下文所指示的此类底层。因此，例如，当膜/层或部分膜/层已沉积至基板表面上时，新沉积的膜/层的暴露表面变成基板表面。
本公开的一些实施例针对使用批处理腔室(也称为空间处理腔室)的膜沉积处理。图1示出处理腔室100的横截面图，处理腔室100包括气体分配组件120(也称为喷射器或喷射器组件)与基座组件140。气体分配组件120是用于处理腔室中的任何类型的气体递送装置。气体分配组件120包括面向基座组件140的前表面121。前表面121可具有任何数目或种类的开口，以传递朝向基座组件140的气体流。气体分配组件120还包括外边缘124，其在所示实施例中基本上为圆形。
所使用的气体分配组件120的具体类型可以取决于所使用的特定处理而变化。本公开的实施例可用于基座与气体分配组件之间的间隙受到控制的任何类型的处理系统。在二元反应中，多个气体通道可包括至少一个第一活性气体A通道、至少一个第二活性气体B通道、至少一个净化气体P通道、和/或至少一个真空V通道。朝向晶片的顶表面引导从第一活性气体A通道、第二活性气体B通道、及净化气体P通道流动的气体。气体流中的一些跨越整个晶片的表面水平移动，并水平移出净化气体P通道的处理区域。
在一些实施例中，气体分配组件120是由单一喷射器单元制成的刚性固定主体。在一个或多个实施例中，如图2所示，气体分配组件120由多个个体扇区(例如，喷射器单元122)制成。单件体或多扇区体都可用于本公开的各种实施例。
基座组件140定位于气体分配组件120下方。基座组件140包括顶表面141以及顶表面141中的至少一个凹槽142。基座组件140还具有底表面143与边缘144。取决于所处理的基板60的形状及大小，凹槽142可以是任何合适的形状及大小。在图1所示的实施例中，凹槽142具有平坦底部，以支撑晶片的底部；然而，凹槽的底部可以变化。在一些实施例中，凹槽具有环绕凹槽的外周边缘的台阶区域，台阶区域经设定尺寸以支撑晶片的外周边缘。例如，取决于晶片的厚度与晶片背侧上已经存在的特征的存在，可变化由台阶所支撑的晶片的外周边缘的量。
在一些实施例中，如图1所示，基座组件140的顶表面141中的凹槽142经设定尺寸以使得支撑于凹槽142中的基板60具有与基座组件140的顶表面141实质上共面的顶表面61。如在此说明书及随附权利要求中所使用，术语“基本上共面”意指晶片的顶表面及基座组件的顶表面是在±0.2mm内共面。在一些实施例中，顶表面是在±0.15mm、±0.10mm、或±0.05mm内共面。
图1的基座组件140包括能够提起、降低和旋转基座组件140的支撑柱160。基座组件可包括加热器、或气体管线、或在支撑柱160的中心内的电气部件。支撑柱160可以是增加或减少在基座组件140与气体分配组件120之间的间隙的主要手段，从而将基座组件140移动至合适的位置。基座组件140也可包括微调谐致动器162，其可对基座组件140进行微调整，以建立基座组件140与气体分配组件120之间的预定间隙170。
在一些实施例中，间隙170距离在约0.1mm至约5.0mm的范围中、或在约0.1mm至约3.0mm的范围中、或在约0.1mm至约2.0mm的范围中、或在约0.2mm至约1.8mm的范围中、或在约0.3mm至约1.7mm的范围中、或在约0.4mm至约1.6mm的范围中、或在约0.5mm至约1.5mm的范围中、或在约0.6mm至约1.4mm的范围中、或在约0.7mm至约1.3mm的范围中、或在约0.8mm至约1.2mm的范围中、或在约0.9mm至约1.1mm的范围中、或约1mm。
附图所示的处理腔室100是转盘型腔室，其中基座组件140可容纳多个基板60。如图2所示，气体分配组件120可包括多个分离的喷射器单元122，每一喷射器单元122能够当晶片在喷射器单元下方移动时，在晶片上沉积膜。两个派形喷射器单元122被示出为位于基座组件140的大约相对侧上并且在基座组件140的上方。喷射器单元122的这个数目仅用于说明目的而示出。应理解可包括更多或更少喷射器单元122。在一些实施例中，有足够数目的派形喷射器单元122以形成复合基座组件140形状的形状。在一些实施例中，个体派形喷射器单元122的每一个可独立地移动、移除和/或置换而不影响其他喷射器单元122的任一个。例如，可提高一个区段，以允许机器人到达基座组件140与气体分配组件120之间的区域，以装载/卸除基板60。
具有多个气体喷射器的处理腔室可用来同时处理多个晶片，而使得晶片经历相同的处理流程。例如，如图3所示，处理腔室100具有四个气体喷射器组件与四个基板60。在处理的开端处，基板60可定位于气体分配组件120之间。以45°旋转17基座组件140将导致气体分配组件120之间的每一基板60移动到用于膜沉积的气体分配组件120，如气体分配组件120下方的虚线圆形所示。额外的45°旋转将让基板60从气体分配组件120移动离开。基板60与气体分配组件120的数目可以相同或不同。在一些实施例中，正在处理的晶片与气体分配组件具有相同数目。在一个或多个实施例中，正在处理的晶片数目是气体分配组件的数目的一小部分或整数倍数。例如，若有四个气体分配组件，则有4x个正在处理的晶片，其中x是大于或等于一的整数值。在示例性实施例中，气体分配组件120包括通过气体帘幕分离的八个处理区域，而基座组件140可容纳六个晶片。
图3所示的处理腔室100仅为一个可能配置的代表，且不应视为限制本公开的范围。此处，处理腔室100包括多个气体分配组件120。在所示实施例中，具有围绕处理腔室100均匀地隔开的四个气体分配组件(也称为气体分配组件120)。所示处理腔室100是八角形；然而，该领域技术人员将了解这是一个可能形状，且不应视为限制本公开的范围。所示气体分配组件120是梯形的，但可以是单一圆形部件或由多个派形区段组成，如图2所示。
图3所示的实施例包括装载锁定腔室180，或辅助腔室，如缓冲站。此腔室180连接至处理腔室100的一侧，以允许例如基板(也称为基板60)从腔室100装载/卸除。晶片机器人可位于腔室180中，以将基板移动到基座上。
转盘(例如，基座组件140)的旋转可以连续或间歇(不连续)。在连续处理中，晶片持续旋转，而使得晶片轮流暴露至每一个喷射器。在非连续处理中，可将晶片移动至喷射器区域并停止，而接着到喷射器之间的区域84并停止。例如，转盘可旋转而使得晶片从喷射器间区域横跨喷射器移动(或相邻于喷射器而停止)，且接着继续到转盘可再次暂停的下一个喷射器间区域。喷射器之间的暂停可提供在每一层沉积之间的额外处理(例如，对等离子体的暴露)的时间。
图4示出气体分配组件220的扇区或部分，其可称为喷射器单元122。喷射器单元122可单独使用或与其他喷射器单元组合使用。例如，如图5所示，四个图4的喷射器单元122经组合以形成单一气体分配组件220。(为了清楚而未示出分离四个喷射器的线。)尽管图4的喷射器单元122除了净化气体端口155与真空端口145之外还具有第一活性气体端口125与第二气体端口135二者，然而喷射器单元122不需要所有这些部件。
参照图4与图5二者，根据一个或多个实施例的气体分配组件220可包含多个扇区(或喷射器单元122)，且每一扇区是相同的或不同的。气体分配组件220定位于处理腔室内，且在气体分配组件220的前表面121中包含多个细长气体端口125、135、155与细长真空端口145。多个细长气体端口125、135、155与细长真空端口145从与内周边缘123相邻的区域朝向与气体分配组件220相邻的外周边缘124的区域延伸。所示多个气体端口包括第一活性气体端口125、第二气体端口135、真空端口145、及净化气体端口155，该真空端口145环绕第一活性气体端口与第二活性气体端口的每一个。
参照图4或图5所示的实施例，当说明端口从至少大约内周区域延伸到至少大约外周区域时，然而，端口可以比仅在径向上从内至外区域延伸得更多。端口可在切线上延伸，如真空端口145环绕活性气体端口125与活性气体端口135。在图4和图5所示的实施例中，楔形活性气体端口125、135在所有边缘(包括与内周边缘与外周边缘相邻处)上由真空端口145环绕。
参照图4，随着基板沿着路径127移动，基板表面的每一部分暴露于各种活性气体。沿着路径127，基板暴露至(或“看到”)净化气体端口155、真空端口145、第一活性气体端口125、真空端口145、净化气体端口155、真空端口145、第二气体端口135、及真空端口145。因此，在图4所示的路径127的端点处，基板已暴露至第一气体端口125与第二气体端口135以形成层。所示喷射器单元122形成四分之一圆，但可更大或更小。图5所示的气体分配组件220可视为串联连接的四个图4的喷射器单元122的组合。
图4的喷射器单元122示出分离活性气体的气体帘幕150。术语“气体帘幕”是用于描述任何分离活性气体以免混合的气流或真空的组合。图4所示的气体帘幕150包含第一活性气体端口125旁边的真空端口145的部分、在中间的净化气体端口155、以及第二气体端口135旁边的真空端口145的部分。气流及真空的此组合可用以防止或最小化第一活性气体与第二活性气体的气相反应。
参照图5，来自气体分配组件220的气流及真空的组合形成对多个处理区域250的分离。处理区域大致定义为环绕独立气体端口125、135，且在250之间具有气体帘幕150。图5所示的实施例构成其间具有八个分离的气体帘幕150的八个分离的处理区域250。处理腔室可具有至少两个处理区域。在一些实施例中，至少具有三、四、五、六、七、八、九、十、十一、或十二个处理区域。
在处理期间，基板可在任何给定时间暴露至一个以上的处理区域250。然而，暴露至不同处理区域的部分将具有分离这两者的气体帘幕。例如，如果基板的前缘进入包括第二气体端口135的处理区域，则基板的中间部分将在气体帘幕150下方，而基板的后缘将在包括第一活性气体端口125的处理区域中。
工厂接口280(例如，可以是装载锁定腔室)图示为连接至处理腔室100。基板60图示为叠加于气体分配组件220之上，以提供参考框架。基板60通常可位于基座组件上，以被托持在气体分配组件120的前表面121附近。基板60经由工厂接口280装载进入处理腔室100到基板支撑件或基座组件上(见图3)。基板60可图示为位于处理区域内，因为基板定位为与第一活性气体端口125相邻，且在两个气体帘幕150a、150b之间。沿着路径127旋转基板60将使基板以逆时针方向环绕处理腔室100移动。因此，基板60将暴露至第一处理区域250a到第八处理区域250h，并包括之间的所有处理区域。
本公开的实施例针对包含处理腔室100的处理方法，处理腔室100具有多个处理区域250a-250h，其中每一处理区域由气体帘幕150与相邻区域分离。例如，图5所图示的处理腔室。取决于气流的布置，处理腔室中的气体帘幕与处理区域的数目可以是任何适当的数目。图5所示的实施例具有八个气体帘幕150与八个处理区域250a-250h。气体帘幕的数目通常等于或大于处理区域的数目。
多个基板60位于基板支撑件上，例如，图1与图2所示的基座组件140。环绕处理区域旋转多个基板60，以进行处理。通常，在整个处理中(包括没有活性气体流入腔室的时候)接合气体帘幕150(气体流动与真空开启)。
参照图6至图9，本公开的实施例针对基座组件300。基座组件300包括基座310与支撑柱350。基座310具有主体312，主体312具有顶表面314与底表面316。顶表面314中具有多个凹部320。
支撑柱350连接至基座310的底表面316，以旋转基座组件300。支撑柱350包括支撑柱真空气室352，支撑柱真空气室352与基座310的主体312中的基座真空气室322流体连通。
如图7所示，一些实施例进一步包含多个径向真空馈送通道326，径向真空馈送通道326在连接327处从基座真空气室322延伸。径向真空馈送通道326与基座真空气室322流体连通。径向真空馈送通道326朝向基座310的外周边缘311延伸，并可利用插塞328封闭，以形成密封通道。
径向真空馈送通道326将真空提供至凹部320。如图9所示，真空可通过凹部320的顶表面330中的多个孔隙329连接至凹部320。每一凹部320中可以存在任何适当数量的径向真空馈送通道326。在一些实施例中，如图7所示，每一凹部320中存在一个径向真空馈送通道326。径向真空馈送通道326可以从基座真空气室322经由靠近凹部320的中心的点延伸至靠近基座310的外周边缘311的点。
支撑柱350还包括净化气体管线354，净化气体管线354通过支撑柱350延伸至基座310的主体312中的净化气体气室324。一些实施例的净化气体管线354延伸通过支撑柱350，在接合部355处分开成多个上净化气体管线356。在一些实施例中，多个上净化气体管线356中的每一个具有基本上相等的传导率。在此处所使用的术语“基本上相等的传导率”是指经由管线的气体传导率在每一管线的平均传导率的±10％以内。
在一些实施例中，如图6所示，支撑柱真空气室352位于支撑柱350的顶部的中央部分中。在所示的实施例中，多个上净化气体管线356中的每一个从支撑柱真空气室352下方的接合部355围绕支撑柱真空气室352延伸至基座310的主体312。
再次参照图7，一些实施例进一步包含多个径向净化气体馈送通道332，多个径向净化气体馈送通道332在接合部325处与净化气体气室324流体连通。可以存在任何适当数量的径向净化气体馈送通道332，以与每一凹部320流体连通。在一些实施例中，存在两个径向净化气体馈送通道332，以与每一凹部320流体连通。两个径向净化气体馈送通道332从净化气体气室324朝向基座310的外周边缘311延伸，并且偏离中心地连接至凹部320。径向净化气体馈送通道332的外端可以利用插塞334塞住。
在所示的实施例中，每个径向净化气体馈送通道332连接至凹部320的具有两个孔洞336的环形气室340。在一些实施例中，两个孔洞336中的每一个具有不同尺寸，而使得每一孔洞336具有基本上相等的流入凹部320的环形气室340的净化气体的传导率。在此处所使用的术语“基本上相等的传导率”指经由孔洞336的气体传导率在每一孔洞336的平均传导率的±10％以内。
如图8所示，一些实施例进一步包含每一凹部320中的净化环342。净化气体环342位于凹部320的环形气室340内。一些实施例的净化环342包含形成第一环状气室346的第一压缩间隙344，以增加第一环状气室346中的压力均匀性。第一压缩间隙344的尺寸可以是任何合适的尺寸。在一些实施例中，第一压缩间隙344是在约200μm至约800μm、或约400μm的范围内。
在一些实施例中，净化环342进一步包含形成第二环状气室347的第二压缩间隙345，以定义离开第二环状气室347的气体的环隙流速，以防止或最小化背侧沉积。第二压缩间隙可以是任何合适的尺寸。在一些实施例中，第二压缩间隙345在约100μm至约500μm、或约200μm的范围内。在一些实施例中，第二压缩间隙345的尺寸小于第一压缩间隙344的尺寸。该领域技术人员将理解，第一压缩间隙344与第二压缩间隙345在净化环342与基座主体312之间形成。
净化气体环342可通过任何合适的技术与硬件而被托持在凹部320的环形气室340中。在一些实施例中，净化气体环342单独通过重力被托持就位，或者通过一个或多个螺钉(未图示)托持就位。
返回参照图6，一些实施例包括连接至升降器351的顶部的力矩板362。力矩板362提供将支撑柱350的升降器351部分连接至基座310的强位置。可以利用多个螺栓(未图示)或通过其他机械紧固件将力矩板连接至基座310。
所示的实施例包括连接至净化气体管线354的净化气体接头364。净化气体接头364提供将净化气体源(未图示)连接至净化气体管线354的位置，使得可以在使用期间维持合适的净化气体流。
支撑柱350还可包括z轴电机366，以上下移动整个支撑柱350。在一些实施例中，z轴电机366被配置以在支撑柱350内上下移动支撑柱350的升降器351部分。波纹管367可以膨胀和收缩，以维持支撑柱内的密封。
参照图9，净化环342的一些实施例包括多个定位销341。定位销341是固定的，并且将净化环342托持在凹部的环形气室340的中心。可以存在任何适当数量的定位销341。在一些实施例中，存在三个或更多个定位销341。
一些实施例还包括位于净化环342的半径周围的定位手柄343。定位手柄343将使晶片361在净化环342内居中，以使得后侧净化气体的流动大致相同地围绕晶片361的外边缘。可以存在任何适当数量的定位手柄343。在一些实施例中，存在3、4、5、6、7、8、9、10或更多个定位手柄343。
根据一个或多个实施例，基板在形成层之前和/或之后经受处理。此处理可在相同腔室中执行，或在一个或多个分离的处理腔室中执行。在一些实施例中，将基板从第一腔室移动至分离的第二腔室，以用于进一步处理。基板可从第一腔室直接移动至分离的处理腔室，或者可从第一腔室移动至一个或多个转移腔室，并且接着移动到分离的处理腔室。因此，处理装置可包含与转移站连通的多个腔室。此种类的装置可指“群集工具”或“群集系统”等。
一般而言，群集工具是模块化系统，该模块化系统包含执行多种功能的多个腔室，该功能包括基板的中心寻找及定向、除气、退火、沉积和/或蚀刻。根据一个或多个实施例，群集工具至少包括第一腔室与中央转移腔室。中央转移腔室可容纳机器人，该机器人可在处理腔室及装载锁定腔室之间梭运基板。转移腔室通常维持在真空条件下，并提供中继阶段，该中继阶段用于从一个腔室梭运基板至位于群集工具的前端的另一腔室和/或装载锁定腔室。可适配用于本公开的两个众所周知的群集工具是与两者均可从加利福尼亚州的Santa Clara的应用材料公司获得。然而，腔室的组合与精确布置可经修改以用于执行如本文中所描述的处理的特定步骤。其他可使用的处理腔室包括但不限于循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洗、化学清洗、热加工(如RTP)、等离子体氮化、除气、定向、羟基化反应、及其他基板处理。通过在群集工具上实现在腔室中的处理，可在沉积后续膜之前，在无氧化下防止具有大气杂质的基板的表面污染。
根据一个或多个实施例，基板连续地在真空下或“装载锁定”条件下，且在从一个腔室移动到下一腔室时不暴露至周围空气。因此，转移腔室在真空下，且在真空压力下被“抽空”。惰性气体可存在于处理腔室或转移腔室中。在一些实施例中，惰性气体用作净化气体，以移除一些或全部的反应物。根据一个或多个实施例，将净化气体喷射于沉积腔室的出口处，用以避免反应物从沉积腔室移动至转移腔室和/或额外的处理腔室。因此，惰性气体的流动在腔室的出口处形成帘幕。
可在单一基板沉积腔室中处理基板，其中在处理另一基板之前装载、处理、及卸除单一基板。也可利用类似于输送系统的连续方式处理基板，其中将多个基板独立装载至腔室的第一部分，移动通过腔室，并且从腔室的第二部分卸除。腔室与相关联的输送器系统的形状可以形成直线路径或弯曲路径。此外，处理腔室可以是转盘，其中多个基板环绕中心轴线移动，并暴露于整个转盘路径的沉积、蚀刻、退火、清洗等的处理。
在处理期间，基板可经加热或冷却。此类加热或冷却可通过任何合适的手段达成，包括但不限于改变基板支撑的温度、及将经加热或经冷却的气体流至基板表面。在一些实施例中，基板支撑包括加热器/冷却器，该加热器/冷却器可经控制用以利用传导方式改变基板温度。在一个或多个实施例中，所采用的气体(活性气体或惰性气体)经加热或冷却以局部改变基板温度。在一些实施例中，加热器/冷却器位于邻近于基板表面的腔室内，以利用传导方式改变基板温度。
基板在处理期间也可静止或旋转。旋转的基板可连续地或以离散步进方式旋转。例如，基板可在整个处理过程中旋转，或基板可在对不同活性或净化气体的暴露之间小量旋转。在处理期间旋转基板(连续或步进式)可以有助于通过最小化例如气流几何的局部可变性的效应，而产生更均匀的沉积或蚀刻。
参照整个本说明书的“一个实施例”、“某些实施例”、“一个或多个实施例”、或“实施例”意指结合实施例描述的特定特征、结构、材料、或特性是包括在本公开的至少一个实施例中。因此，整个本说明书的各处中出现的如“在一个或多个实施例中”、“在某些实施例中”、“在一个实施例中”、或“在实施例中”的短语不一定指本公开的相同实施例。此外，在一个或多个实施例中，特定特征、结构、材料、或特性可以利用任何合适的方式组合。
尽管已参照特定实施例而描述本公开，但应理解，这些实施例仅仅是本公开的原理与应用的说明。而该领域技术人员将理解，在不背离本公开的精神与范围的情况下，可以对本公开的方法与装置进行各种修改及变化。因此，本公开旨在包括在所附权利要求书及其等同物的范围内的修改及变化。

Claims (15)

1.一种基座组件，包含：
基座，具有主体，所述主体具有顶表面与底表面，所述顶表面中具有多个凹部；以及
支撑柱，连接至所述基座的所述底表面，以旋转所述基座组件，所述支撑柱包括：
支撑柱真空气室，所述支撑柱真空气室与所述基座的所述主体中的基座真空气室流体连通，以及
净化气体管线，所述净化气体管线通过所述支撑柱延伸至所述基座的所述主体中的净化气体气室。
2.如权利要求1所述的基座组件，其中，延伸通过所述支撑柱的所述净化气体管线在接合部处分开成多个上净化气体管线。
3.如权利要求2所述的基座组件，其中，所述多个上净化气体管线中的每一个具有基本上相等的传导率。
4.如权利要求3所述的基座组件，其中，所述支撑柱真空气室位于所述支撑柱的顶部的中央部分中。
5.如权利要求4所述的基座组件，其中，所述多个上净化气体管线中的每一个从所述支撑柱真空气室下方的接合部围绕所述支撑柱真空气室延伸至所述基座的所述主体。
6.如权利要求1所述的基座组件，进一步包含所述基座的所述主体中的多个径向净化气体馈送通道，所述径向净化气体馈送通道与所述净化气体气室流体连通。
7.如权利要求6所述的基座组件，其中，存在至少两个径向净化气体馈送通道，所述至少两个径向净化气体馈送通道与所述凹部中的每一个流体连通。
8.如权利要求7所述的基座组件，其中，存在两个径向净化气体馈送通道，所述至少两个径向净化气体馈送通道与每个凹部流体连通，所述两个径向净化气体馈送通道偏离中心地连接至所述凹部。
9.如权利要求8所述的基座组件，其中，所述径向净化气体馈送通道中的每一个连接至所述凹部的具有两个孔洞的环形气室。
10.如权利要求9所述的基座组件，其中，所述两个孔洞中的每一个具有不同的尺寸，以具有流入所述凹部的所述环形气室中的净化气体的相等传导率。
11.如权利要求1所述的基座组件，进一步包含多个径向真空馈送通道，所述径向真空馈送通道与所述基座真空气室流体连通。
12.如权利要求11所述的基座组件，其中每个凹槽中存在一个径向真空馈送通道，所述径向真空馈送通道与所述凹部中的多个孔隙流体连通。
13.如权利要求1所述的基座组件，进一步包含在每个凹部中的净化环。
14.如权利要求13所述的基座组件，其中，所述净化环包含第一压缩间隙与第二压缩间隙，所述第一压缩间隙形成第一环状气室，以增加所述第一环状气室中的压力均匀性，所述第二压缩间隙形成第二环状气室，以定义离开所述第二环状气室的气体的环隙流速。
15.一种基座组件，包含：
基座，具有主体，所述主体具有顶表面与底表面，所述顶表面中具有多个凹部，所述凹部中的每一个具有在所述凹部的外周区域内的净化环，从而形成环形腔；
支撑柱，连接至所述基座的所述底表面，以旋转所述基座组件，所述支撑柱包括：
支撑柱真空气室，所述支撑柱真空气室位于所述支撑柱的顶部的中央部分中，所述支撑柱真空气室与所述基座的所述主体中的基座真空气室流体连通，以及
净化气体管线，所述净化气体管线延伸通过所述支撑柱，从而在所述支撑柱真空气室下方的接合部处分开成两个上净化气体管线，所述上净化气体管线具有基本上相同的传导率，并与所述基座的所述主体中的净化气体气室流体连通；
所述主体内的多个径向净化气体馈送通道，其中两个径向净化气体馈送通道与所述净化气体气室以及所述凹部中的每一个的所述环形空腔流体连通，所述径向净化气体馈送通道中的每一个具有基本上相同传导率而不同尺寸的两个孔洞；
多个径向真空馈送通道，其中，一个径向真空馈送通道与所述基座真空气室以及每一个凹部流体连通，所述径向真空馈送通道中的每一个与所述凹部中的多个孔隙流体连通；以及
每个凹部中的净化环，所述净化环包含第一压缩间隙与第二压缩间隙，所述第一压缩间隙形成第一环状气室，以增加所述第一环状气室中的压力均匀性，所述第二压缩间隙形成第二环状气室，以定义离开所述第二环状气室的气体的环隙流速。
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