TW201323592A - 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板 - Google Patents

漿料、硏磨液組、硏磨液、基板的硏磨方法及基板 Download PDF

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Publication number
TW201323592A
TW201323592A TW102107717A TW102107717A TW201323592A TW 201323592 A TW201323592 A TW 201323592A TW 102107717 A TW102107717 A TW 102107717A TW 102107717 A TW102107717 A TW 102107717A TW 201323592 A TW201323592 A TW 201323592A
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TW
Taiwan
Prior art keywords
polishing
liquid
abrasive grains
mass
light
Prior art date
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TW102107717A
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English (en)
Chinese (zh)
Inventor
Tomohiro Iwano
Takenori Narita
Daisuke Ryuzaki
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Hitachi Chemical Co Ltd
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Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201323592A publication Critical patent/TW201323592A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW102107717A 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板 TW201323592A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010260036 2010-11-22

Publications (1)

Publication Number Publication Date
TW201323592A true TW201323592A (zh) 2013-06-16

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ID=46145883

Family Applications (4)

Application Number Title Priority Date Filing Date
TW102107717A TW201323592A (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW100142634A TWI434919B (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板
TW102107719A TWI510606B (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107716A TW201323591A (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板

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TW100142634A TWI434919B (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板
TW102107719A TWI510606B (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107716A TW201323591A (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板

Country Status (7)

Country Link
US (5) US9988573B2 (enExample)
JP (4) JP5590144B2 (enExample)
KR (4) KR20130129396A (enExample)
CN (4) CN103497732B (enExample)
SG (1) SG190054A1 (enExample)
TW (4) TW201323592A (enExample)
WO (1) WO2012070541A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102666014B (zh) 2010-03-12 2017-10-31 日立化成株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN103497732B (zh) 2010-11-22 2016-08-10 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
WO2013125445A1 (ja) 2012-02-21 2013-08-29 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
JP5987905B2 (ja) * 2012-05-22 2016-09-07 日立化成株式会社 砥粒の製造方法、スラリーの製造方法及び研磨液の製造方法
KR102034330B1 (ko) * 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP5987904B2 (ja) * 2012-05-22 2016-09-07 日立化成株式会社 砥粒の製造方法、スラリーの製造方法及び研磨液の製造方法
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
KR102034329B1 (ko) * 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
US9163162B2 (en) 2012-08-30 2015-10-20 Hitachi Chemical Company, Ltd. Polishing agent, polishing agent set and method for polishing base
WO2014199739A1 (ja) 2013-06-12 2014-12-18 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
WO2015030009A1 (ja) 2013-08-30 2015-03-05 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
CN111378416A (zh) 2013-09-10 2020-07-07 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基体的研磨方法以及基体
KR102138406B1 (ko) 2013-12-26 2020-07-27 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
JP6720975B2 (ja) * 2015-09-09 2020-07-08 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
CN110462791B (zh) 2017-03-27 2023-06-16 株式会社力森诺科 悬浮液和研磨方法
WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
WO2019181016A1 (ja) 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2020021680A1 (ja) 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
WO2020065723A1 (ja) 2018-09-25 2020-04-02 日立化成株式会社 スラリ及び研磨方法
CN116710531A (zh) * 2020-08-31 2023-09-05 秀博瑞殷株式公社 氧化铈粒子、包含其的化学机械研磨用浆料组合物以及半导体器件的制造方法
WO2022102020A1 (ja) 2020-11-11 2022-05-19 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
KR102783394B1 (ko) 2020-11-11 2025-03-17 가부시끼가이샤 레조낙 연마액 및 연마 방법
CN112680111B (zh) * 2020-12-24 2022-07-08 安徽中飞科技有限公司 一种玻璃用抛光液及其应用
KR102620964B1 (ko) 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3123452A (en) 1964-03-03 Glass polish and process of polishing
US3097083A (en) 1959-07-02 1963-07-09 American Potash & Chem Corp Polishing composition and process of forming same
BR9104844A (pt) 1991-11-06 1993-05-11 Solvay Processo para a extracao seletiva de cerio de uma solucao aquosa de elementos de terras raras
FR2684662B1 (fr) 1991-12-09 1994-05-06 Rhone Poulenc Chimie Composition a base d'oxyde cerique, preparation et utilisation.
FR2714370B1 (fr) 1993-12-24 1996-03-08 Rhone Poulenc Chimie Précurseur d'une composition et composition à base d'un oxyde mixte de cérium et de zirconium, procédé de préparation et utilisation.
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
WO1997029510A1 (fr) * 1996-02-07 1997-08-14 Hitachi Chemical Company, Ltd. Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats
JPH09270402A (ja) 1996-03-29 1997-10-14 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の製造法
JPH10154672A (ja) 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
EP2164095A1 (en) * 1996-09-30 2010-03-17 Hitachi Chemical Co., Ltd. Cerium oxide abrasive and method of polishing substrates
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
AU6116098A (en) 1997-03-03 1998-09-22 Nissan Chemical Industries Ltd. Process for producing composite sols, coating composition, and optical member
JP3992402B2 (ja) 1999-05-25 2007-10-17 株式会社コーセー 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料
US6440856B1 (en) 1999-09-14 2002-08-27 Jsr Corporation Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JPWO2002067309A1 (ja) * 2001-02-20 2004-06-24 日立化成工業株式会社 研磨剤及び基板の研磨方法
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
CN100386850C (zh) 2001-10-31 2008-05-07 日立化成工业株式会社 研磨液及研磨方法
JP3782771B2 (ja) 2002-11-06 2006-06-07 ユシロ化学工業株式会社 研磨用砥粒及び研磨剤の製造方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
EP1580802A4 (en) 2002-12-31 2007-03-28 Sumco Corp CHEMICAL MECHANICAL POLISHING GROWER COMPOSITION, SEMICONDUCTOR ELEMENT SURFACE PLANARIZATION METHOD IN WHICH THE COMPOSITION IS USED, AND METHOD OF ADJUSTING THE SELECTION RATE OF SAID COMPOSITION
TWI278507B (en) * 2003-05-28 2007-04-11 Hitachi Chemical Co Ltd Polishing agent and polishing method
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
TWI286567B (en) 2003-09-12 2007-09-11 Hitachi Chemical Co Ltd Cerium salt and fabricating method thereof, cerium oxide and cerium polishing agent
KR100555432B1 (ko) * 2003-09-23 2006-02-24 삼성코닝 주식회사 반도체 박막 연마용 산화세륨 수성 슬러리 및 이의 제조방법
JP5013671B2 (ja) 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
JP2006249129A (ja) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd 研磨剤の製造方法及び研磨剤
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
KR20070041330A (ko) 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
CN101395097B (zh) 2006-04-14 2011-05-18 昭和电工株式会社 玻璃基板的加工方法以及玻璃基板加工用漂洗剂组合物
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
FR2906800B1 (fr) 2006-10-09 2008-11-28 Rhodia Recherches & Tech Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage
US8821750B2 (en) 2007-02-27 2014-09-02 Hitachi Chemical Co., Ltd. Metal polishing slurry and polishing method
JP5281758B2 (ja) 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
JP4294710B2 (ja) * 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
JP5444625B2 (ja) 2008-03-05 2014-03-19 日立化成株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
CN102017091B (zh) 2008-04-23 2014-10-29 日立化成株式会社 研磨剂及使用该研磨剂的基板研磨方法
JP5287174B2 (ja) * 2008-04-30 2013-09-11 日立化成株式会社 研磨剤及び研磨方法
US8383003B2 (en) 2008-06-20 2013-02-26 Nexplanar Corporation Polishing systems
JP5403957B2 (ja) 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US20100107509A1 (en) 2008-11-04 2010-05-06 Guiselin Olivier L Coated abrasive article for polishing or lapping applications and system and method for producing the same.
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2010153782A (ja) 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
CN103333661B (zh) 2008-12-11 2015-08-19 日立化成株式会社 Cmp用研磨液以及使用该研磨液的研磨方法
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
CN102473622B (zh) 2009-10-22 2013-10-16 日立化成株式会社 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
CN102666014B (zh) 2010-03-12 2017-10-31 日立化成株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
JP5648567B2 (ja) 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
CN103222036B (zh) 2010-11-22 2016-11-09 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN103497732B (zh) * 2010-11-22 2016-08-10 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
CN102408836A (zh) 2011-10-20 2012-04-11 天津理工大学 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用
KR102034330B1 (ko) * 2012-05-22 2019-10-18 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
JP5943073B2 (ja) * 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
WO2015030009A1 (ja) * 2013-08-30 2015-03-05 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体

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