JP5590144B2 - スラリー、研磨液セット、研磨液、及び、基板の研磨方法 - Google Patents

スラリー、研磨液セット、研磨液、及び、基板の研磨方法 Download PDF

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Publication number
JP5590144B2
JP5590144B2 JP2012545748A JP2012545748A JP5590144B2 JP 5590144 B2 JP5590144 B2 JP 5590144B2 JP 2012545748 A JP2012545748 A JP 2012545748A JP 2012545748 A JP2012545748 A JP 2012545748A JP 5590144 B2 JP5590144 B2 JP 5590144B2
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Japan
Prior art keywords
polishing
liquid
mass
abrasive grains
film
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JP2012545748A
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Japanese (ja)
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JPWO2012070541A1 (ja
Inventor
友洋 岩野
武憲 成田
大介 龍崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2012545748A priority Critical patent/JP5590144B2/ja
Publication of JPWO2012070541A1 publication Critical patent/JPWO2012070541A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012545748A 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法 Active JP5590144B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012545748A JP5590144B2 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010260036 2010-11-22
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2012545748A JP5590144B2 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法

Related Child Applications (3)

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JP2013098574A Division JP5831495B2 (ja) 2010-11-22 2013-05-08 スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法
JP2013098580A Division JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098578A Division JP2013211567A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

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JPWO2012070541A1 JPWO2012070541A1 (ja) 2014-05-19
JP5590144B2 true JP5590144B2 (ja) 2014-09-17

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JP2012545748A Active JP5590144B2 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法
JP2013098578A Withdrawn JP2013211567A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098580A Withdrawn JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098574A Active JP5831495B2 (ja) 2010-11-22 2013-05-08 スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法

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JP2013098580A Withdrawn JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098574A Active JP5831495B2 (ja) 2010-11-22 2013-05-08 スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法

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US (5) US9988573B2 (enExample)
JP (4) JP5590144B2 (enExample)
KR (4) KR101886895B1 (enExample)
CN (4) CN103497733B (enExample)
SG (1) SG190054A1 (enExample)
TW (4) TWI510606B (enExample)
WO (1) WO2012070541A1 (enExample)

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CN103497733B (zh) 2010-11-22 2016-11-23 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
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JP6044629B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
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US9988573B2 (en) 2018-06-05
US20130130501A1 (en) 2013-05-23
KR101886895B1 (ko) 2018-08-08
TW201323593A (zh) 2013-06-16
JP2013211568A (ja) 2013-10-10
TW201323592A (zh) 2013-06-16
CN103222035A (zh) 2013-07-24
JP2013211566A (ja) 2013-10-10
TW201226546A (en) 2012-07-01
CN103497732A (zh) 2014-01-08
CN103500706A (zh) 2014-01-08
JPWO2012070541A1 (ja) 2014-05-19
CN103222035B (zh) 2016-09-21
CN103497733B (zh) 2016-11-23
US20120329370A1 (en) 2012-12-27
KR20130133188A (ko) 2013-12-06
CN103497732B (zh) 2016-08-10
WO2012070541A1 (ja) 2012-05-31
KR101476943B1 (ko) 2014-12-24
KR20130129396A (ko) 2013-11-28
KR20130129397A (ko) 2013-11-28
TWI434919B (zh) 2014-04-21
CN103497733A (zh) 2014-01-08
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US20180251680A1 (en) 2018-09-06
US20130244431A1 (en) 2013-09-19
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