SG190054A1 - Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate - Google Patents

Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate Download PDF

Info

Publication number
SG190054A1
SG190054A1 SG2013032834A SG2013032834A SG190054A1 SG 190054 A1 SG190054 A1 SG 190054A1 SG 2013032834 A SG2013032834 A SG 2013032834A SG 2013032834 A SG2013032834 A SG 2013032834A SG 190054 A1 SG190054 A1 SG 190054A1
Authority
SG
Singapore
Prior art keywords
polishing
abrasive grains
mass
polished
polishing liquid
Prior art date
Application number
SG2013032834A
Other languages
English (en)
Inventor
Tomohiro Iwano
Takenori Narita
Daisuke Ryuzaki
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SG190054A1 publication Critical patent/SG190054A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2013032834A 2010-11-22 2011-11-21 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate SG190054A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

Publications (1)

Publication Number Publication Date
SG190054A1 true SG190054A1 (en) 2013-06-28

Family

ID=46145883

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013032834A SG190054A1 (en) 2010-11-22 2011-11-21 Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Country Status (7)

Country Link
US (5) US9988573B2 (enExample)
JP (4) JP5590144B2 (enExample)
KR (4) KR101476943B1 (enExample)
CN (4) CN103497732B (enExample)
SG (1) SG190054A1 (enExample)
TW (4) TWI434919B (enExample)
WO (1) WO2012070541A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107474799B (zh) 2010-03-12 2020-12-29 昭和电工材料株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
KR101476943B1 (ko) * 2010-11-22 2014-12-24 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR102004570B1 (ko) 2012-02-21 2019-07-26 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
US20150129796A1 (en) * 2012-05-22 2015-05-14 Hitachi Chemical Company, Ltd. Abrasive grains, slurry, polishing solution, and manufacturing methods therefor
WO2013175859A1 (ja) * 2012-05-22 2013-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
JP5943073B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP5943072B2 (ja) 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP5987904B2 (ja) * 2012-05-22 2016-09-07 日立化成株式会社 砥粒の製造方法、スラリーの製造方法及び研磨液の製造方法
JP6060970B2 (ja) * 2012-05-22 2017-01-18 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
KR102137293B1 (ko) 2012-08-30 2020-07-23 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
WO2014199739A1 (ja) 2013-06-12 2014-12-18 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
WO2015030009A1 (ja) * 2013-08-30 2015-03-05 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
KR102361336B1 (ko) 2013-09-10 2022-02-14 쇼와덴코머티리얼즈가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
KR102138406B1 (ko) 2013-12-26 2020-07-27 히타치가세이가부시끼가이샤 연마제, 연마제 세트 및 기체의 연마 방법
SG11201801790UA (en) * 2015-09-09 2018-04-27 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and substrate polishing method
SG11201908858SA (en) 2017-03-27 2019-10-30 Hitachi Chemical Co Ltd Slurry and polishing method
WO2018179061A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
WO2019181016A1 (ja) 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
JP6888744B2 (ja) 2018-09-25 2021-06-16 昭和電工マテリアルズ株式会社 スラリ及び研磨方法
KR102490006B1 (ko) * 2020-08-31 2023-01-18 솔브레인 주식회사 산화 세륨 입자, 이를 포함하는 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2022102020A1 (ja) 2020-11-11 2022-05-19 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
US20230145080A1 (en) 2020-11-11 2023-05-11 Showa Denko Materials Co., Ltd. Polishing liquid and polishing method
CN112680111B (zh) * 2020-12-24 2022-07-08 安徽中飞科技有限公司 一种玻璃用抛光液及其应用
KR102620964B1 (ko) 2021-07-08 2024-01-03 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 연마된 물품의 제조방법

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3123452A (en) 1964-03-03 Glass polish and process of polishing
US3097083A (en) 1959-07-02 1963-07-09 American Potash & Chem Corp Polishing composition and process of forming same
BR9104844A (pt) 1991-11-06 1993-05-11 Solvay Processo para a extracao seletiva de cerio de uma solucao aquosa de elementos de terras raras
FR2684662B1 (fr) 1991-12-09 1994-05-06 Rhone Poulenc Chimie Composition a base d'oxyde cerique, preparation et utilisation.
FR2714370B1 (fr) 1993-12-24 1996-03-08 Rhone Poulenc Chimie Précurseur d'une composition et composition à base d'un oxyde mixte de cérium et de zirconium, procédé de préparation et utilisation.
JP3278532B2 (ja) 1994-07-08 2002-04-30 株式会社東芝 半導体装置の製造方法
WO1997029510A1 (fr) 1996-02-07 1997-08-14 Hitachi Chemical Company, Ltd. Abrasif d'oxyde de cerium, microplaquette semi-conductrice, dispositif semi-conducteur, procede pour les produire et procede pour polir les substrats
JPH09270402A (ja) 1996-03-29 1997-10-14 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の製造法
EP1610367B1 (en) * 1996-09-30 2010-03-17 Hitachi Chemical Co., Ltd. Cerium oxide abrasive and method of polishing substrates
JPH10154672A (ja) 1996-09-30 1998-06-09 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JPH10106994A (ja) 1997-01-28 1998-04-24 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
DE69841885D1 (de) 1997-03-03 2010-10-21 Nissan Chemical Ind Ltd Verfahren zur herstellung von kompositsolen, überzugkomposition und optischem element
JP3992402B2 (ja) 1999-05-25 2007-10-17 株式会社コーセー 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料
TW593674B (en) 1999-09-14 2004-06-21 Jsr Corp Cleaning agent for semiconductor parts and method for cleaning semiconductor parts
JP2002241739A (ja) 2001-02-20 2002-08-28 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
WO2002067309A1 (en) 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
TWI314950B (en) 2001-10-31 2009-09-21 Hitachi Chemical Co Ltd Polishing slurry and polishing method
JP3782771B2 (ja) 2002-11-06 2006-06-07 ユシロ化学工業株式会社 研磨用砥粒及び研磨剤の製造方法
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
CN1748292B (zh) 2002-12-31 2010-09-01 三菱住友硅晶株式会社 化学机械研磨用浆料组合物、利用它的半导体元件的表面平坦化方法以及浆料组合物的选择比控制方法
JP4285480B2 (ja) * 2003-05-28 2009-06-24 日立化成工業株式会社 研磨剤及び研磨方法
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
CN101885959B (zh) 2003-09-12 2012-06-13 日立化成工业株式会社 铈系研磨剂
KR100555432B1 (ko) * 2003-09-23 2006-02-24 삼성코닝 주식회사 반도체 박막 연마용 산화세륨 수성 슬러리 및 이의 제조방법
JP5013671B2 (ja) 2004-12-28 2012-08-29 日揮触媒化成株式会社 金属酸化物ゾルの製造方法および金属酸化物ゾル
JP2006249129A (ja) 2005-03-08 2006-09-21 Hitachi Chem Co Ltd 研磨剤の製造方法及び研磨剤
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US7803203B2 (en) 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
KR20070041330A (ko) 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
JP4243307B2 (ja) 2006-04-14 2009-03-25 昭和電工株式会社 ガラス基板の加工方法及びガラス基板加工用リンス剤組成物
SG136886A1 (en) 2006-04-28 2007-11-29 Asahi Glass Co Ltd Method for producing glass substrate for magnetic disk, and magnetic disk
FR2906800B1 (fr) 2006-10-09 2008-11-28 Rhodia Recherches & Tech Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage
WO2008105342A1 (ja) 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
JP5281758B2 (ja) 2007-05-24 2013-09-04 ユシロ化学工業株式会社 研磨用組成物
JP4294710B2 (ja) 2007-09-13 2009-07-15 三井金属鉱業株式会社 酸化セリウム及びその製造方法
JP5444625B2 (ja) 2008-03-05 2014-03-19 日立化成株式会社 Ｃｍｐ研磨液、基板の研磨方法及び電子部品
TWI546373B (zh) * 2008-04-23 2016-08-21 日立化成股份有限公司 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法
JP5287174B2 (ja) * 2008-04-30 2013-09-11 日立化成株式会社 研磨剤及び研磨方法
US8383003B2 (en) 2008-06-20 2013-02-26 Nexplanar Corporation Polishing systems
JP5403957B2 (ja) 2008-07-01 2014-01-29 花王株式会社 研磨液組成物
US20100107509A1 (en) 2008-11-04 2010-05-06 Guiselin Olivier L Coated abrasive article for polishing or lapping applications and system and method for producing the same.
JP5499556B2 (ja) * 2008-11-11 2014-05-21 日立化成株式会社 スラリ及び研磨液セット並びにこれらから得られるｃｍｐ研磨液を用いた基板の研磨方法及び基板
JP2010153782A (ja) 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
JP2010153781A (ja) * 2008-11-20 2010-07-08 Hitachi Chem Co Ltd 基板の研磨方法
KR101359197B1 (ko) 2008-12-11 2014-02-06 히타치가세이가부시끼가이샤 Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법
JP5355099B2 (ja) * 2009-01-08 2013-11-27 ニッタ・ハース株式会社 研磨組成物
US8728341B2 (en) 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
JP2011142284A (ja) * 2009-12-10 2011-07-21 Hitachi Chem Co Ltd Ｃｍｐ研磨液、基板の研磨方法及び電子部品
CN107474799B (zh) 2010-03-12 2020-12-29 昭和电工材料株式会社 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法
JP5648567B2 (ja) 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
KR101476943B1 (ko) 2010-11-22 2014-12-24 히타치가세이가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
US9881801B2 (en) 2010-11-22 2018-01-30 Hitachi Chemical Company, Ltd. Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
CN102408836A (zh) 2011-10-20 2012-04-11 天津理工大学 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用
JP5943073B2 (ja) * 2012-05-22 2016-06-29 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
JP6060970B2 (ja) * 2012-05-22 2017-01-18 日立化成株式会社 スラリー、研磨液セット、研磨液及び基体の研磨方法
WO2015030009A1 (ja) * 2013-08-30 2015-03-05 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体

Also Published As

Publication number Publication date
KR20130129396A (ko) 2013-11-28
JP5590144B2 (ja) 2014-09-17
JPWO2012070541A1 (ja) 2014-05-19
US20130130501A1 (en) 2013-05-23
JP2013211567A (ja) 2013-10-10
CN103500706A (zh) 2014-01-08
TW201226546A (en) 2012-07-01
TW201323593A (zh) 2013-06-16
TWI510606B (zh) 2015-12-01
CN103497732B (zh) 2016-08-10
US20130143404A1 (en) 2013-06-06
KR20130129395A (ko) 2013-11-28
US20180251680A1 (en) 2018-09-06
WO2012070541A1 (ja) 2012-05-31
JP2013211568A (ja) 2013-10-10
TW201323591A (zh) 2013-06-16
US20120329370A1 (en) 2012-12-27
KR20130133188A (ko) 2013-12-06
CN103222035A (zh) 2013-07-24
KR20130129397A (ko) 2013-11-28
JP2013211566A (ja) 2013-10-10
KR101476943B1 (ko) 2014-12-24
TW201323592A (zh) 2013-06-16
TWI434919B (zh) 2014-04-21
CN103497733B (zh) 2016-11-23
CN103497733A (zh) 2014-01-08
US9988573B2 (en) 2018-06-05
CN103222035B (zh) 2016-09-21
JP5831495B2 (ja) 2015-12-09
US20130244431A1 (en) 2013-09-19
KR101886895B1 (ko) 2018-08-08
CN103497732A (zh) 2014-01-08

Similar Documents

Publication Publication Date Title
US10825687B2 (en) Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
US9988573B2 (en) Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate
US9039796B2 (en) Method for producing abrasive grains, method for producing slurry, and method for producing polishing liquid
US9346978B2 (en) Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US10549399B2 (en) Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US10557059B2 (en) Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
KR20130121721A (ko) 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
US20150129796A1 (en) Abrasive grains, slurry, polishing solution, and manufacturing methods therefor