KR101476943B1 - 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 - Google Patents

슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 Download PDF

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KR101476943B1
KR101476943B1 KR1020137012271A KR20137012271A KR101476943B1 KR 101476943 B1 KR101476943 B1 KR 101476943B1 KR 1020137012271 A KR1020137012271 A KR 1020137012271A KR 20137012271 A KR20137012271 A KR 20137012271A KR 101476943 B1 KR101476943 B1 KR 101476943B1
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polishing
liquid
polished
film
abrasive grains
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KR20130133188A (ko
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도모히로 이와노
다케노리 나리타
다이스케 류자키
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히타치가세이가부시끼가이샤
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/12Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020137012271A 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판 Active KR101476943B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-260036 2010-11-22
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

Related Child Applications (3)

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KR1020137017128A Division KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017130A Division KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017129A Division KR20130129396A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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KR20130133188A KR20130133188A (ko) 2013-12-06
KR101476943B1 true KR101476943B1 (ko) 2014-12-24

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KR1020137012271A Active KR101476943B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017128A Active KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017129A Withdrawn KR20130129396A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017130A Withdrawn KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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KR1020137017128A Active KR101886895B1 (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017129A Withdrawn KR20130129396A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판
KR1020137017130A Withdrawn KR20130129397A (ko) 2010-11-22 2011-11-21 슬러리, 연마액 세트, 연마액, 기판의 연마 방법 및 기판

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US (5) US9988573B2 (enExample)
JP (4) JP5590144B2 (enExample)
KR (4) KR101476943B1 (enExample)
CN (4) CN103497732B (enExample)
SG (1) SG190054A1 (enExample)
TW (4) TWI434919B (enExample)
WO (1) WO2012070541A1 (enExample)

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WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
WO2019181016A1 (ja) 2018-03-22 2019-09-26 日立化成株式会社 研磨液、研磨液セット及び研磨方法
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JP2013211567A (ja) 2013-10-10
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TW201226546A (en) 2012-07-01
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US20130143404A1 (en) 2013-06-06
KR20130129395A (ko) 2013-11-28
US20180251680A1 (en) 2018-09-06
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US20120329370A1 (en) 2012-12-27
KR20130133188A (ko) 2013-12-06
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KR20130129397A (ko) 2013-11-28
JP2013211566A (ja) 2013-10-10
TW201323592A (zh) 2013-06-16
TWI434919B (zh) 2014-04-21
CN103497733B (zh) 2016-11-23
CN103497733A (zh) 2014-01-08
SG190054A1 (en) 2013-06-28
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CN103222035B (zh) 2016-09-21
JP5831495B2 (ja) 2015-12-09
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KR101886895B1 (ko) 2018-08-08
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