CN103222035A - 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 - Google Patents
悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 Download PDFInfo
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- CN103222035A CN103222035A CN2011800557965A CN201180055796A CN103222035A CN 103222035 A CN103222035 A CN 103222035A CN 2011800557965 A CN2011800557965 A CN 2011800557965A CN 201180055796 A CN201180055796 A CN 201180055796A CN 103222035 A CN103222035 A CN 103222035A
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- 239000007788 liquid Substances 0.000 title claims abstract description 267
- 238000000034 method Methods 0.000 title claims description 65
- 239000000758 substrate Substances 0.000 title claims description 51
- 238000005498 polishing Methods 0.000 title abstract description 5
- 239000002002 slurry Substances 0.000 title 1
- 238000002835 absorbance Methods 0.000 claims abstract description 106
- 239000006185 dispersion Substances 0.000 claims abstract description 89
- 230000000996 additive effect Effects 0.000 claims abstract description 77
- 239000000654 additive Substances 0.000 claims abstract description 67
- 238000002834 transmittance Methods 0.000 claims abstract description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000227 grinding Methods 0.000 claims description 269
- 239000002245 particle Substances 0.000 claims description 229
- 239000000725 suspension Substances 0.000 claims description 99
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000003513 alkali Substances 0.000 claims description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 50
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 42
- 239000003795 chemical substances by application Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 238000002156 mixing Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 29
- 150000003839 salts Chemical class 0.000 claims description 25
- 239000000470 constituent Substances 0.000 claims description 14
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical class OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 abstract 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 82
- 239000000243 solution Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 22
- 239000004372 Polyvinyl alcohol Substances 0.000 description 19
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 19
- 239000002184 metal Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 239000002243 precursor Substances 0.000 description 14
- 238000007127 saponification reaction Methods 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000012528 membrane Substances 0.000 description 12
- 239000011550 stock solution Substances 0.000 description 12
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- 239000000178 monomer Substances 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000006116 polymerization reaction Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- -1 shitosan Chemical compound 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 150000002460 imidazoles Chemical class 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000003556 assay Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000003053 piperidines Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- CUYKNJBYIJFRCU-UHFFFAOYSA-N 3-aminopyridine Chemical compound NC1=CC=CN=C1 CUYKNJBYIJFRCU-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000004520 agglutination Effects 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000010908 decantation Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 150000003217 pyrazoles Chemical class 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229960005137 succinic acid Drugs 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- RZRILSWMGXWSJY-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;sulfuric acid Chemical compound OS(O)(=O)=O.OCCN(CCO)CCO RZRILSWMGXWSJY-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004129 EU approved improving agent Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N Picolinic acid Natural products OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 241000531807 Psophiidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 229940024606 amino acid Drugs 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009697 arginine Nutrition 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- ACZVSMNFVFBOTM-UHFFFAOYSA-N beta-alanine betaine Chemical compound C[N+](C)(C)CCC([O-])=O ACZVSMNFVFBOTM-UHFFFAOYSA-N 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 235000018977 lysine Nutrition 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000083 poly(allylamine) Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000001052 yellow pigment Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
悬浮液用储藏液的外观 | 研磨速度(nm/min) | |
实施例1 | 少有浑浊且呈淡黄色 | 280 |
实施例2 | 透明且呈淡黄色 | 320 |
实施例3 | 透明且呈淡黄色 | 340 |
实施例4 | 透明且呈淡黄色 | 380 |
实施例5 | 透明且呈淡黄色 | 327 |
实施例6 | 透明且呈淡黄色 | 376 |
实施例7 | 透明且呈淡黄色 | 350 |
实施例8 | 透明且呈淡黄色 | 355 |
实施例9 | 透明且呈淡黄色 | 377 |
实施例10 | 透明且呈淡黄色 | 368 |
实施例11 | 透明且呈淡黄色 | 405 |
实施例12 | 透明且呈淡黄色 | 389 |
实施例13 | 透明且呈淡黄色 | 320 |
实施例14 | 极少的浑浊且呈淡黄色 | 255 |
实施例15 | 极少的浑浊且呈淡黄色 | 285 |
实施例16 | 透明且呈淡黄色 | 305 |
实施例17 | 透明且呈淡黄色 | 335 |
比较例1 | 白色浑浊 | 170 |
比较例2 | 白色浑浊 | 190 |
比较例3 | 白色浑浊 | 175 |
比较例4 | 浑浊且呈淡黄色 | 220 |
Claims (24)
Priority Applications (2)
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CN201310335723.2A CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Applications Claiming Priority (3)
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---|---|---|---|
JP2010-260036 | 2010-11-22 | ||
JP2010260036 | 2010-11-22 | ||
PCT/JP2011/076822 WO2012070541A1 (ja) | 2010-11-22 | 2011-11-21 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
Related Child Applications (3)
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CN201310335599.XA Division CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Division CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A Division CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Publications (2)
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CN103222035A true CN103222035A (zh) | 2013-07-24 |
CN103222035B CN103222035B (zh) | 2016-09-21 |
Family
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Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
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CN201180055796.5A Active CN103222035B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A Active CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Active CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335599.XA Pending CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Family Applications After (3)
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CN201310335723.2A Active CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Active CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335599.XA Pending CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Country Status (7)
Country | Link |
---|---|
US (5) | US9988573B2 (zh) |
JP (4) | JP5590144B2 (zh) |
KR (4) | KR20130129397A (zh) |
CN (4) | CN103222035B (zh) |
SG (1) | SG190054A1 (zh) |
TW (4) | TWI510606B (zh) |
WO (1) | WO2012070541A1 (zh) |
Cited By (2)
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CN107949615A (zh) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | 研磨液、研磨液套剂和基体的研磨方法 |
CN112640053A (zh) * | 2018-07-26 | 2021-04-09 | 昭和电工材料株式会社 | 浆料及研磨方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
SG190058A1 (en) | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
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US20150096238A1 (en) * | 2012-05-22 | 2015-04-09 | Hitachi Chemical Company, Ltd. | Abrasive particles, slurry, polishing solution, and manufacturing methods therefor |
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CN112740366A (zh) | 2018-09-25 | 2021-04-30 | 昭和电工材料株式会社 | 浆料及研磨方法 |
US20230145080A1 (en) | 2020-11-11 | 2023-05-11 | Showa Denko Materials Co., Ltd. | Polishing liquid and polishing method |
JP7193033B2 (ja) | 2020-11-11 | 2022-12-20 | 昭和電工マテリアルズ株式会社 | 研磨液及び研磨方法 |
CN112680111B (zh) * | 2020-12-24 | 2022-07-08 | 安徽中飞科技有限公司 | 一种玻璃用抛光液及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002067309A1 (fr) * | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Pate a polir et procede de polissage d'un substrat |
CN1524917A (zh) * | 1996-09-30 | 2004-09-01 | �������ɹ�ҵ��ʽ���� | 氧化铈研磨剂以及基板的研磨方法 |
JP2009290188A (ja) * | 2008-04-30 | 2009-12-10 | Hitachi Chem Co Ltd | 研磨剤及び研磨方法 |
JP2010153781A (ja) * | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3123452A (en) | 1964-03-03 | Glass polish and process of polishing | ||
US3097083A (en) | 1959-07-02 | 1963-07-09 | American Potash & Chem Corp | Polishing composition and process of forming same |
BR9104844A (pt) | 1991-11-06 | 1993-05-11 | Solvay | Processo para a extracao seletiva de cerio de uma solucao aquosa de elementos de terras raras |
FR2684662B1 (fr) | 1991-12-09 | 1994-05-06 | Rhone Poulenc Chimie | Composition a base d'oxyde cerique, preparation et utilisation. |
FR2714370B1 (fr) | 1993-12-24 | 1996-03-08 | Rhone Poulenc Chimie | Précurseur d'une composition et composition à base d'un oxyde mixte de cérium et de zirconium, procédé de préparation et utilisation. |
WO1998039253A1 (fr) | 1997-03-03 | 1998-09-11 | Nissan Chemical Industries, Ltd. | Procede de production de sols de composites, de composition de revetement et d'elements optiques |
JP3278532B2 (ja) | 1994-07-08 | 2002-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
KR100336598B1 (ko) * | 1996-02-07 | 2002-05-16 | 이사오 우치가사키 | 산화 세륨 연마제 제조용 산화 세륨 입자 |
JPH09270402A (ja) | 1996-03-29 | 1997-10-14 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の製造法 |
JPH10154672A (ja) | 1996-09-30 | 1998-06-09 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JPH10106994A (ja) | 1997-01-28 | 1998-04-24 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
JP3992402B2 (ja) | 1999-05-25 | 2007-10-17 | 株式会社コーセー | 金属酸化物固溶酸化セリウムからなる紫外線遮断剤並びにそれを配合した樹脂組成物及び化粧料 |
TW593674B (en) | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
JP2002241739A (ja) | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | 研磨剤及び基板の研磨方法 |
JP4231632B2 (ja) | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
US20050050803A1 (en) | 2001-10-31 | 2005-03-10 | Jin Amanokura | Polishing fluid and polishing method |
JP3782771B2 (ja) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | 研磨用砥粒及び研磨剤の製造方法 |
US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US20060246723A1 (en) | 2002-12-31 | 2006-11-02 | Sumitomo Mitsubishi Silicon Corporation | Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition |
KR100698396B1 (ko) * | 2003-05-28 | 2007-03-23 | 히다치 가세고교 가부시끼가이샤 | 연마제 및 연마 방법 |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
KR100714814B1 (ko) | 2003-09-12 | 2007-05-04 | 히다치 가세고교 가부시끼가이샤 | 세륨염, 그 제조방법, 산화세륨 및 세륨계 연마제 |
KR100555432B1 (ko) * | 2003-09-23 | 2006-02-24 | 삼성코닝 주식회사 | 반도체 박막 연마용 산화세륨 수성 슬러리 및 이의 제조방법 |
JP5013671B2 (ja) | 2004-12-28 | 2012-08-29 | 日揮触媒化成株式会社 | 金属酸化物ゾルの製造方法および金属酸化物ゾル |
JP2006249129A (ja) | 2005-03-08 | 2006-09-21 | Hitachi Chem Co Ltd | 研磨剤の製造方法及び研磨剤 |
US20060278614A1 (en) * | 2005-06-08 | 2006-12-14 | Cabot Microelectronics Corporation | Polishing composition and method for defect improvement by reduced particle stiction on copper surface |
US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
KR20070041330A (ko) | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | 반도체 기판용 연마액 조성물 |
CN101395097B (zh) | 2006-04-14 | 2011-05-18 | 昭和电工株式会社 | 玻璃基板的加工方法以及玻璃基板加工用漂洗剂组合物 |
SG136886A1 (en) | 2006-04-28 | 2007-11-29 | Asahi Glass Co Ltd | Method for producing glass substrate for magnetic disk, and magnetic disk |
FR2906800B1 (fr) | 2006-10-09 | 2008-11-28 | Rhodia Recherches & Tech | Suspension liquide et poudre de particules d'oxyde de cerium, procedes de preparation de celles-ci et utilisation dans le polissage |
KR101418626B1 (ko) | 2007-02-27 | 2014-07-14 | 히타치가세이가부시끼가이샤 | 금속용 연마액 및 연마방법 |
JP5281758B2 (ja) | 2007-05-24 | 2013-09-04 | ユシロ化学工業株式会社 | 研磨用組成物 |
JP4294710B2 (ja) | 2007-09-13 | 2009-07-15 | 三井金属鉱業株式会社 | 酸化セリウム及びその製造方法 |
JP5444625B2 (ja) | 2008-03-05 | 2014-03-19 | 日立化成株式会社 | Cmp研磨液、基板の研磨方法及び電子部品 |
CN105368397B (zh) | 2008-04-23 | 2017-11-03 | 日立化成株式会社 | 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法 |
US8383003B2 (en) | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
JP5403957B2 (ja) | 2008-07-01 | 2014-01-29 | 花王株式会社 | 研磨液組成物 |
US20100107509A1 (en) | 2008-11-04 | 2010-05-06 | Guiselin Olivier L | Coated abrasive article for polishing or lapping applications and system and method for producing the same. |
JP5499556B2 (ja) * | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | スラリ及び研磨液セット並びにこれらから得られるcmp研磨液を用いた基板の研磨方法及び基板 |
JP2010153782A (ja) | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
CN103342986B (zh) | 2008-12-11 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液以及使用该研磨液的研磨方法 |
JP5355099B2 (ja) * | 2009-01-08 | 2013-11-27 | ニッタ・ハース株式会社 | 研磨組成物 |
CN102473622B (zh) | 2009-10-22 | 2013-10-16 | 日立化成株式会社 | 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法 |
JP2011142284A (ja) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp研磨液、基板の研磨方法及び電子部品 |
WO2011111421A1 (ja) | 2010-03-12 | 2011-09-15 | 日立化成工業株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
JP5648567B2 (ja) | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
JP5590144B2 (ja) | 2010-11-22 | 2014-09-17 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
SG190058A1 (en) | 2010-11-22 | 2013-06-28 | Hitachi Chemical Co Ltd | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
CN102408836A (zh) | 2011-10-20 | 2012-04-11 | 天津理工大学 | 一种用于氧化钛薄膜化学机械平坦化的纳米抛光液及应用 |
US9346978B2 (en) * | 2012-05-22 | 2016-05-24 | Hitachi Chemical Company, Ltd. | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
JP5943073B2 (ja) * | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
US10131819B2 (en) * | 2013-08-30 | 2018-11-20 | Hitachi Chemical Company, Ltd | Slurry, polishing solution set, polishing solution, and substrate polishing method |
-
2011
- 2011-11-21 JP JP2012545748A patent/JP5590144B2/ja active Active
- 2011-11-21 CN CN201180055796.5A patent/CN103222035B/zh active Active
- 2011-11-21 WO PCT/JP2011/076822 patent/WO2012070541A1/ja active Application Filing
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- 2011-11-21 US US13/582,969 patent/US9988573B2/en active Active
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- 2011-11-21 CN CN201310335499.7A patent/CN103497732B/zh active Active
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- 2011-11-22 TW TW102107719A patent/TWI510606B/zh active
- 2011-11-22 TW TW102107716A patent/TW201323591A/zh unknown
- 2011-11-22 TW TW102107717A patent/TW201323592A/zh unknown
- 2011-11-22 TW TW100142634A patent/TWI434919B/zh active
-
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- 2013-01-31 US US13/754,958 patent/US20130130501A1/en not_active Abandoned
- 2013-01-31 US US13/755,075 patent/US20130143404A1/en not_active Abandoned
- 2013-01-31 US US13/755,127 patent/US20130244431A1/en not_active Abandoned
- 2013-05-08 JP JP2013098574A patent/JP5831495B2/ja active Active
- 2013-05-08 JP JP2013098580A patent/JP2013211568A/ja not_active Withdrawn
- 2013-05-08 JP JP2013098578A patent/JP2013211567A/ja not_active Withdrawn
-
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- 2018-05-04 US US15/970,953 patent/US20180251680A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524917A (zh) * | 1996-09-30 | 2004-09-01 | �������ɹ�ҵ��ʽ���� | 氧化铈研磨剂以及基板的研磨方法 |
WO2002067309A1 (fr) * | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Pate a polir et procede de polissage d'un substrat |
JP2009290188A (ja) * | 2008-04-30 | 2009-12-10 | Hitachi Chem Co Ltd | 研磨剤及び研磨方法 |
JP2010153781A (ja) * | 2008-11-20 | 2010-07-08 | Hitachi Chem Co Ltd | 基板の研磨方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107949615A (zh) * | 2015-09-09 | 2018-04-20 | 日立化成株式会社 | 研磨液、研磨液套剂和基体的研磨方法 |
CN107949615B (zh) * | 2015-09-09 | 2023-08-04 | 株式会社力森诺科 | 研磨液、研磨液套剂和基体的研磨方法 |
CN112640053A (zh) * | 2018-07-26 | 2021-04-09 | 昭和电工材料株式会社 | 浆料及研磨方法 |
CN112655075A (zh) * | 2018-07-26 | 2021-04-13 | 昭和电工材料株式会社 | 浆料及研磨方法 |
Also Published As
Publication number | Publication date |
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TW201323592A (zh) | 2013-06-16 |
KR20130129395A (ko) | 2013-11-28 |
CN103222035B (zh) | 2016-09-21 |
TW201323591A (zh) | 2013-06-16 |
US9988573B2 (en) | 2018-06-05 |
TWI434919B (zh) | 2014-04-21 |
US20130143404A1 (en) | 2013-06-06 |
JP5831495B2 (ja) | 2015-12-09 |
US20130130501A1 (en) | 2013-05-23 |
JPWO2012070541A1 (ja) | 2014-05-19 |
KR20130129397A (ko) | 2013-11-28 |
KR101476943B1 (ko) | 2014-12-24 |
JP5590144B2 (ja) | 2014-09-17 |
CN103497733A (zh) | 2014-01-08 |
CN103497733B (zh) | 2016-11-23 |
KR20130133188A (ko) | 2013-12-06 |
TW201226546A (en) | 2012-07-01 |
SG190054A1 (en) | 2013-06-28 |
JP2013211566A (ja) | 2013-10-10 |
JP2013211568A (ja) | 2013-10-10 |
CN103497732B (zh) | 2016-08-10 |
KR101886895B1 (ko) | 2018-08-08 |
US20130244431A1 (en) | 2013-09-19 |
JP2013211567A (ja) | 2013-10-10 |
CN103500706A (zh) | 2014-01-08 |
TWI510606B (zh) | 2015-12-01 |
CN103497732A (zh) | 2014-01-08 |
WO2012070541A1 (ja) | 2012-05-31 |
KR20130129396A (ko) | 2013-11-28 |
TW201323593A (zh) | 2013-06-16 |
US20120329370A1 (en) | 2012-12-27 |
US20180251680A1 (en) | 2018-09-06 |
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