CN103222035B - 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 - Google Patents
悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 Download PDFInfo
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- CN103222035B CN103222035B CN201180055796.5A CN201180055796A CN103222035B CN 103222035 B CN103222035 B CN 103222035B CN 201180055796 A CN201180055796 A CN 201180055796A CN 103222035 B CN103222035 B CN 103222035B
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- 239000012736 aqueous medium Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
悬浮液用储藏液的外观 | 研磨速度(nm/min) | |
实施例1 | 少有浑浊且呈淡黄色 | 280 |
实施例2 | 透明且呈淡黄色 | 320 |
实施例3 | 透明且呈淡黄色 | 340 |
实施例4 | 透明且呈淡黄色 | 380 |
实施例5 | 透明且呈淡黄色 | 327 |
实施例6 | 透明且呈淡黄色 | 376 |
实施例7 | 透明且呈淡黄色 | 350 |
实施例8 | 透明且呈淡黄色 | 355 |
实施例9 | 透明且呈淡黄色 | 377 |
实施例10 | 透明且呈淡黄色 | 368 |
实施例11 | 透明且呈淡黄色 | 405 |
实施例12 | 透明且呈淡黄色 | 389 |
实施例13 | 透明且呈淡黄色 | 320 |
实施例14 | 极少的浑浊且呈淡黄色 | 255 |
实施例15 | 极少的浑浊且呈淡黄色 | 285 |
实施例16 | 透明且呈淡黄色 | 305 |
实施例17 | 透明且呈淡黄色 | 335 |
比较例1 | 白色浑浊 | 170 |
比较例2 | 白色浑浊 | 190 |
比较例3 | 白色浑浊 | 175 |
比较例4 | 浑浊且呈淡黄色 | 220 |
Claims (128)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201310335499.7A CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2010260036 | 2010-11-22 | ||
JP2010-260036 | 2010-11-22 | ||
PCT/JP2011/076822 WO2012070541A1 (ja) | 2010-11-22 | 2011-11-21 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
Related Child Applications (3)
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CN201310335599.XA Division CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Division CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A Division CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
Publications (2)
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CN103222035A CN103222035A (zh) | 2013-07-24 |
CN103222035B true CN103222035B (zh) | 2016-09-21 |
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CN201180055796.5A Active CN103222035B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335599.XA Pending CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A Active CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Active CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
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CN201310335599.XA Pending CN103500706A (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335723.2A Active CN103497733B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
CN201310335499.7A Active CN103497732B (zh) | 2010-11-22 | 2011-11-21 | 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板 |
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US (5) | US9988573B2 (zh) |
JP (4) | JP5590144B2 (zh) |
KR (4) | KR20130129396A (zh) |
CN (4) | CN103222035B (zh) |
SG (1) | SG190054A1 (zh) |
TW (4) | TW201323592A (zh) |
WO (1) | WO2012070541A1 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5582187B2 (ja) | 2010-03-12 | 2014-09-03 | 日立化成株式会社 | スラリ、研磨液セット、研磨液及びこれらを用いた基板の研磨方法 |
US9988573B2 (en) | 2010-11-22 | 2018-06-05 | Hitachi Chemical Company, Ltd. | Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate |
JP5626358B2 (ja) | 2010-11-22 | 2014-11-19 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、及び、基板の研磨方法 |
WO2013125446A1 (ja) * | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
JP6044629B2 (ja) | 2012-02-21 | 2016-12-14 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
SG11201407086TA (en) * | 2012-05-22 | 2015-02-27 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
WO2013175856A1 (ja) | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
JP5943072B2 (ja) | 2012-05-22 | 2016-06-29 | 日立化成株式会社 | スラリー、研磨液セット、研磨液及び基体の研磨方法 |
CN104321403A (zh) * | 2012-05-22 | 2015-01-28 | 日立化成株式会社 | 磨粒、悬浮液、研磨液及这些的制造方法 |
WO2013175860A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | 砥粒、スラリー、研磨液及びこれらの製造方法 |
WO2013175857A1 (ja) * | 2012-05-22 | 2013-11-28 | 日立化成株式会社 | スラリー、研磨液セット、研磨液、基体の研磨方法及び基体 |
US9163162B2 (en) | 2012-08-30 | 2015-10-20 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set and method for polishing base |
WO2014199739A1 (ja) | 2013-06-12 | 2014-12-18 | 日立化成株式会社 | Cmp用研磨液及び研磨方法 |
US10131819B2 (en) | 2013-08-30 | 2018-11-20 | Hitachi Chemical Company, Ltd | Slurry, polishing solution set, polishing solution, and substrate polishing method |
KR20160054466A (ko) * | 2013-09-10 | 2016-05-16 | 히타치가세이가부시끼가이샤 | 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체 |
KR102138406B1 (ko) | 2013-12-26 | 2020-07-27 | 히타치가세이가부시끼가이샤 | 연마제, 연마제 세트 및 기체의 연마 방법 |
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WO2018179061A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
WO2018179064A1 (ja) | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | スラリ及び研磨方法 |
WO2019043819A1 (ja) | 2017-08-30 | 2019-03-07 | 日立化成株式会社 | スラリ及び研磨方法 |
WO2019181013A1 (ja) | 2018-03-22 | 2019-09-26 | 日立化成株式会社 | 研磨液、研磨液セット及び研磨方法 |
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US20130244431A1 (en) | 2013-09-19 |
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CN103497733B (zh) | 2016-11-23 |
KR101476943B1 (ko) | 2014-12-24 |
TWI510606B (zh) | 2015-12-01 |
JP2013211567A (ja) | 2013-10-10 |
KR20130129395A (ko) | 2013-11-28 |
US20180251680A1 (en) | 2018-09-06 |
TW201226546A (en) | 2012-07-01 |
KR20130129397A (ko) | 2013-11-28 |
TW201323592A (zh) | 2013-06-16 |
TWI434919B (zh) | 2014-04-21 |
US9988573B2 (en) | 2018-06-05 |
JPWO2012070541A1 (ja) | 2014-05-19 |
KR20130129396A (ko) | 2013-11-28 |
KR20130133188A (ko) | 2013-12-06 |
SG190054A1 (en) | 2013-06-28 |
JP5590144B2 (ja) | 2014-09-17 |
TW201323591A (zh) | 2013-06-16 |
US20120329370A1 (en) | 2012-12-27 |
WO2012070541A1 (ja) | 2012-05-31 |
CN103500706A (zh) | 2014-01-08 |
JP5831495B2 (ja) | 2015-12-09 |
CN103497732B (zh) | 2016-08-10 |
CN103497732A (zh) | 2014-01-08 |
JP2013211566A (ja) | 2013-10-10 |
JP2013211568A (ja) | 2013-10-10 |
CN103222035A (zh) | 2013-07-24 |
KR101886895B1 (ko) | 2018-08-08 |
US20130143404A1 (en) | 2013-06-06 |
CN103497733A (zh) | 2014-01-08 |
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