TWI434919B - 漿料、研磨液組、研磨液、基板的研磨方法及基板 - Google Patents

漿料、研磨液組、研磨液、基板的研磨方法及基板 Download PDF

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Publication number
TWI434919B
TWI434919B TW100142634A TW100142634A TWI434919B TW I434919 B TWI434919 B TW I434919B TW 100142634 A TW100142634 A TW 100142634A TW 100142634 A TW100142634 A TW 100142634A TW I434919 B TWI434919 B TW I434919B
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TW
Taiwan
Prior art keywords
polishing
liquid
abrasive grains
polished
mass
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TW100142634A
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English (en)
Chinese (zh)
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TW201226546A (en
Inventor
岩野友洋
成田武憲
龍崎大介
Original Assignee
日立化成股份有限公司
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Publication of TW201226546A publication Critical patent/TW201226546A/zh
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Publication of TWI434919B publication Critical patent/TWI434919B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100142634A 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板 TWI434919B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010260036 2010-11-22

Publications (2)

Publication Number Publication Date
TW201226546A TW201226546A (en) 2012-07-01
TWI434919B true TWI434919B (zh) 2014-04-21

Family

ID=46145883

Family Applications (4)

Application Number Title Priority Date Filing Date
TW100142634A TWI434919B (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板
TW102107719A TWI510606B (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107717A TW201323592A (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107716A TW201323591A (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW102107719A TWI510606B (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107717A TW201323592A (zh) 2010-11-22 2011-11-22 漿料、硏磨液組、硏磨液、基板的硏磨方法及基板
TW102107716A TW201323591A (zh) 2010-11-22 2011-11-22 漿料、研磨液組、研磨液、基板的研磨方法及基板

Country Status (7)

Country Link
US (5) US9988573B2 (enExample)
JP (4) JP5590144B2 (enExample)
KR (4) KR101476943B1 (enExample)
CN (4) CN103497732B (enExample)
SG (1) SG190054A1 (enExample)
TW (4) TWI434919B (enExample)
WO (1) WO2012070541A1 (enExample)

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CN103497732B (zh) 2010-11-22 2016-08-10 日立化成株式会社 悬浮液、研磨液套剂、研磨液、基板的研磨方法及基板
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JP6428625B2 (ja) * 2013-08-30 2018-11-28 日立化成株式会社 スラリー、研磨液セット、研磨液、及び、基体の研磨方法

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Publication number Publication date
US20130143404A1 (en) 2013-06-06
TW201226546A (en) 2012-07-01
CN103497732B (zh) 2016-08-10
KR20130129396A (ko) 2013-11-28
JP2013211568A (ja) 2013-10-10
CN103497733B (zh) 2016-11-23
CN103497732A (zh) 2014-01-08
JPWO2012070541A1 (ja) 2014-05-19
CN103222035B (zh) 2016-09-21
US9988573B2 (en) 2018-06-05
WO2012070541A1 (ja) 2012-05-31
KR101886895B1 (ko) 2018-08-08
KR20130133188A (ko) 2013-12-06
JP5831495B2 (ja) 2015-12-09
US20120329370A1 (en) 2012-12-27
CN103222035A (zh) 2013-07-24
TW201323591A (zh) 2013-06-16
KR20130129397A (ko) 2013-11-28
KR101476943B1 (ko) 2014-12-24
JP2013211566A (ja) 2013-10-10
US20130244431A1 (en) 2013-09-19
US20130130501A1 (en) 2013-05-23
TW201323593A (zh) 2013-06-16
JP2013211567A (ja) 2013-10-10
TW201323592A (zh) 2013-06-16
CN103500706A (zh) 2014-01-08
CN103497733A (zh) 2014-01-08
JP5590144B2 (ja) 2014-09-17
KR20130129395A (ko) 2013-11-28
US20180251680A1 (en) 2018-09-06
SG190054A1 (en) 2013-06-28
TWI510606B (zh) 2015-12-01

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