TW201138040A - Integrated circuit devices and method of forming a bump structure - Google Patents

Integrated circuit devices and method of forming a bump structure Download PDF

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Publication number
TW201138040A
TW201138040A TW99125872A TW99125872A TW201138040A TW 201138040 A TW201138040 A TW 201138040A TW 99125872 A TW99125872 A TW 99125872A TW 99125872 A TW99125872 A TW 99125872A TW 201138040 A TW201138040 A TW 201138040A
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TW
Taiwan
Prior art keywords
layer
copper
bump
electrolytic
metal layer
Prior art date
Application number
TW99125872A
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English (en)
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TWI427751B (zh
Inventor
Wen-Hsiung Lu
Ming-Da Cheng
Chih-Wei Lin
Jacky Chang
Chung-Shi Liu
Chen-Hua Yu
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Taiwan Semiconductor Mfg
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Publication of TW201138040A publication Critical patent/TW201138040A/zh
Application granted granted Critical
Publication of TWI427751B publication Critical patent/TWI427751B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

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201138040 六、發明說明： 【發明所屬之技術領域】 本發明係有關於積體電路的製造，特別有關於積體 電路元件的凸塊結構。 【先前技術】 現代的積體電路是由數百萬計的主動元件形成，例 如電晶體與電容器，這些元件最初是互相隔絕的，但是 之後會互相連接在一起，以形成功能性的電路。典型的 内連線結構包含橫向的内連線，例如金屬線（導線），以及 垂直的内連線，例如導孔與接點，内連線對於現代積體 電路的密度與效能的限制越來越具有影響力。接合墊 (bonding pad)在内連線結構的頂端上形成，並且在個別晶 片的表面上暴露出來，經由接合墊可形成連接晶片至封 裝基底或其他晶粒的電性連接，接合墊可用於導線接合 或覆晶接合。 覆晶封裝技術使用凸塊以建立在晶片的輸入/輸出墊 片（I/O pad)與基底或封裝體的導線架（lead frame)之間的 電性接觸，在結構上，凸塊實際上含有凸塊本身，以及 凸塊下金屬層（under bump metallurgy ; UBM)，其位於凸 塊與輸入/輸出墊片之間。凸塊下金屬層通常含有黏著 層、阻障層以及導線層，並且依此順序在輸入/輸出墊片 上形成。凸塊本身基於所使用的材料可分類為銲錫凸 塊、金凸塊、銅柱凸塊以及具有混合金屬的凸塊。近年 來，銅柱凸塊技術逐漸被提出，以取代銲錫凸塊的使用。 0503-A34880TWF/kelly 3 201138040 電子元件藉由銅柱凸塊的方式連接至基底，在使用最少 凸塊架橋的情況下，達到較細微的間距，以降低電路的 電容負載，並且讓電子元件可在較高的辭下執行。銅 柱凸塊覆晶組合具有以下優點：（1)較佳的熱/電子效能， (2)較高的電流承載容積’（3)對於電子遷移具有較佳的阻 抗’因此可延長凸塊的壽命，（4)較少的禱造空隙，亦即 在銅柱凸塊之間具有較—致的間隙。此外，藉由銅柱的 使用來控制銲錫的散佈，可達到較低成本的基底，並且 不需無錯珠狀物的設計。 關於銲錫與銅之間的相互作用以及互相擴散行為已 經被研究，可以發現到，在含錫的銲錫與銅之間的界面， 錫會快速地與銅反應，形成Cu_Sn介金屬化合物 (intermetallic compounds ; IMCs)，隨著在界面形 金屬化合物的厚度增加，銲錫接合的強度會減少，造成 凸塊裂開。目前利用在銅柱凸塊上提供鎳覆蓋層，以降 低介金屬化合物的厚度’然而，鎳覆蓋層會在凸塊下金 屬層的㈣製程之後造成㈣底部被⑽，結果在銅柱 的邊緣上鎳層會突出，這將會在銲錫接合與銅柱之間的 界面上造成應力，並引發脫層失效現象。 此外，銅在製造過程中很容易氧化，氧化的銅柱會 導致電子元件對基底的黏著性變差，較差的黏著性會造 成嚴重的可靠度問題，因為會產生較高的漏電流。氧化 的銅柱也會導致底部填膠沿著底部填膠與銅柱之間的界 面裂開，此裂縫會蔓延至底下的低介電常數介電層，或 蔓延至用於接合銅柱至基底的銲錫。因此，需要側壁保 0503-A34880TWF/keIIy . 201138040 -蒦層來避免銅氧化，但是傳統處理銅柱側壁的方法要 3 =成本’並且會有界面脫層問題。目前使用化 子’又’程（lmmersi〇n tin process；)在銅柱側壁上提供錫 層但疋仍然有製造成本、錫與底部填膠之間的黏著力， 以及銲錫潤濕至侧壁上的問題產生 的微細間距封裝技術是一種挑戰。 代曰曰片 【發明内容】 在一實施例中，提供積體電路元件，包括 屬=:::基底上’銅柱設置於： 置於銅柱的側壁表面盥1表面上上\面’以及保護層設 層，包括人晉二 其中保護層為含鎳 層包j含量小於〇 〇1重量百分比_。 在-實施例中，提供積體電路元件 底’凸塊下金屬層設置於半導體基底上，導電 凸塊下金屬層上，具有側壁表面與 岸 解金屬層形成與上表面上，其中保護層由電 供4體：Γ中，提供凸塊結構的形成方法，包括提 成底，形成凸塊下金屬層在半導體基底 隙’進行電解製程，以金屬層填充=層之間形成間 罩層。 具兄此間隙，以及移除遮 0503-A34880TWF/kell· 5 201138040 為了讓本發明之上述目的、特徵、及優點能更明顯 易懂，以下配合所附圖式，作詳細說明如下： 【實施方式】 在此所揭示的實施例提供用於銅柱凸塊技術的側壁 保護製程，其中在銅柱凸塊側壁上的保護層是經由電解 製程所形成的金屬層，在此也稱為電解金屬層。銅柱凸 塊可直接用在半導體晶片的導電墊或重分佈層上，也可 用於覆晶組合或其他相似的應用上。 在本發明實施例中使用參考圖式詳細說明本發明， 如附圖所示，在圖式及說明書描述中盡可能地使用相同 的標號來表示相同或相似的部分。在圖式中，實施例的 形狀及厚度可能被擴大，以達到方便說明及清楚顯示之 目的。說明書的描述直接關於依據此揭示所形成的裴置 之部分元件，或更直接關於與此裝置共同操作的元件。 可以理解的是，這些元件沒有特定的形式，或者可使用 各種形式來描繪。再者，當一層被稱為在另一層上或在 基底上時，這一層也可以是直接在其他層上或在基底 上，或者也可以存在介於中間的其他層。在整篇說明金 中所提及的，，-實施例”表示在此實施例中所#述的特； 特徵、結構或特性是被包含在至少一實施例中。因此， 在整篇說明書中所提及的”在一實施例中”不需要是指相 同的實施例。另外，特定的特徵、結構或特性可以盥一 個或更多實施例以任何適合的方式結合，可以理解的 是’以下配合的圖式並非按尺寸繪製，這些圖式僅用於 〇503-A34880TWF/kelly 6 201138040 說明本發明。· 在此，第1至8圖描繪出依據一示範性實施例，在 形成銅柱凸塊的各製程階段中，部分的半導體元件之剖 面示意圖。 參閱第1圖，用於凸塊製程的示範性半導體基底1〇 被用在半導體積體電路的製造上，並且積體電路可以在 基底中以及/或基底上形成。半導體基底被定義成包括半 導體材料的任何結構，其包含但不限定於：巨塊矽（bulk • silicon)、半導體晶圓、矽覆蓋絕緣層 (silicon-on-insulator; SOI)基底或矽鍺基底，其他的半導 體材料包含也使用第三族（group ΠΙ)、第四族（group IV) 以及第五族（group V)元素的材料。基底1〇更可包括複數 個隔絕特徵（未繪出）’例如淺溝槽隔絕（shallow trench isolation: STI)特徵或石夕的局部氧t(1〇cal 〇xidati(m 〇f silicon: LOCOS)特徵，隔絕特徵可以被定義並且隔絕各 種微電子元件（未繪出）。各種微電子元件的例子可以在包 • 含電晶體的基底1〇内形成，電晶體例如為金氧半場效電 晶體（metal oxide semiconductor field effect transistor ; MOSFET)、互補式金氧半（complementary metal oxide semiconductor;CMOS)電晶體、雙載子接面電晶體（bipolar junction transistor : BJT)、高電壓電晶體、高頻電晶體、 p通道以及/或η通道場效電晶體（PFETs/NFETs)等。此 外，基底10還可包含電阻器、二極體、電容器、電感器、 熔線以及其他合適的元件。可實施各種製程以形成微電 子元件，包含沈積 '蝕刻、離子植入、微影、退火以及 0503-A34880TWF/kelly 7 201138040 其他合適的製程。這些微電子元件互相連接以形成積體 電路元件，例如邏輯元件 '記憶體元件（如靜態隨機存取 s己憶體（SRAM))、射頻（radio frequency ; RF)元件、輸入/ 輸出（input/output ; I/O)元件、系統單晶片 (system-on-chip ; S0C)元件、前述之組合以及其他類型合 適的元件。 基底10更包含層間介電層（未繪出）以及金屬結構（未 繪出）在積體電路之上，在金屬結構内的層間介電層包含 低介電常數介電材料、未摻雜矽玻璃（und〇ped smcate glass; USG)、氮化矽、氮氧化矽或其他常用的材料，低 介電常數介電材料的介電常數值可低於約39或低於約 2.8。在金屬結構中的金屬線可由銅或銅合金形成，在此 技術領域巾具有通常知識者當可瞭解金屬層的詳細形成 方式。墊片區12為形成在頂端層間介電層内的頂端金屬 層，其為導電路線的—部份，並且如果需要，其具有經 由平坦化製程，例如化學機械研磨製程 meChanical polishing ; CMp)處理過的暴露表面。適用於 墊片區12的材料可包含但不限定於例如銅（〇0、！_)、 銘銅（AlCu)、銅合金、或其他可動的導電材料。塾片區 可用在接σ製在中，以連接個別晶片中 圖也顯示出形成在基底10上的鈍化^ 二，-部份的塾…，以容許後續的凸二 貫施例中’鈍化層14由非有機材料形成，其卷 0503-A34880TWF/kelly 201138040 選自於未摻雜矽玻璃、氮化矽、氮氧化矽、氧化石夕以及 前述之組合。在另一實施例中，鈍化層14由高分子層形 成，例如環氧化物（epoxy)、聚亞醯胺（p〇lyimide)、笨環 丁 烯（benzocyclobutene ; BCB)、聚苯。吳 〇坐 (polybenzoxazole ; PBO)以及類似的材料，也可以使用其 他相對軟性，通常是有機的介電材料。 ' 第1圖更顯示出形成在純化層14上的高分子層π, 以及將高分子層16圖案化’形成開口 17暴露出—部份 φ 的墊片區12 ’以容許後續的凸塊形成。開口 I?可小於、 等於或大於開口 15，在一實施例中，開口 17設置在開口 15内。高分子層16由高分子形成，例如環氧化物 (epoxy)、聚亞醯胺（polyimide)、笨環丁—（BCB)、聚苯喝 唑（PBO)以及類似的材料，也可以使用其他相對軟性，通 常是有機的介電材料。在一實施例中，高分子層丨6為聚 亞醯胺層。在另一實施例中，高分子層丨6為聚笨噪吐 (PB0)層。高分子層16是軟性的，因此具有降低在個別 • 基底上的固有應力之功能’此外，高分子層16很容易以 數十微米的厚度形成。 參閱第2圖，在產生的結構上形成凸塊下金屬層 (under-bump-metallurgy ; UBM) 18，其可以由任何數量的 合適技術形成，包含物理氣相沈積（PVD)、化學氣相沈積 (CVD)、電化學沈積（electrochemical deposition ; ECD)、 分子束蠢晶（molecular beam epitaxy ; MBE)、原子層沈積 (ALD)、電鍍以及類似的方式。凸塊下金屬層18在高分 子層16以及墊片區12暴露出來的部分上形成，並且形 0503-A34880TWF/kelly 9 201138040 成在開口 17的側壁及底部上。凸塊下金屬層18包含擴 散阻障層’其由鈦(titanium)、叙（tantalum)、氮化鈦、氮 化组或類似的材料形成。擴散阻障層沈積的厚度介於約 500A至2000A之間，例如厚度約為1000人。凸塊下金屬 層18更可包含銅層，其形成在擴散阻障層上，銅層可由 銅合金形成’其包含銀、鉻、鎳、錫、金以及前述之組 合。銅層沈積的厚度介於約5〇〇A至ιοοοοΑ之間，例如 厚度約為5000A。 接著，參閱第3圖，為了定義凸塊視窗，在凸塊下 金屬層18上提供遮罩層20,並且將遮罩層2〇圖案化 形成開口 21 ’暴露出一部份的凸塊下金屬層18，用於带 成銅柱凸塊（Cu pillar bump)。遮罩層20可以是乾膜咬^ 阻膜，經由塗佈、固化（curing)、去除殘膠（descum)以及 類似的步驟形成，接著進行微影技術以及/或餘刻製程， 例如乾蝕刻以及/或濕蝕刻製程。 參閱第4圖，在開口 21内利用銲錫濕潤性 wettability)部分地或完全地填充導電材料。在一實施例 中’在開口 21内形成銅層22接觸凸塊下金屬層18，銅 層22大抵上是一層包含純元素銅、含有不可避免的雜質 的銅以及含有少量元素的銅合金，例如含有超、銦、錫 鋅、猛、鉻、鈦、鍺、銀、翻、鎮、|g或錘。形成鋼芦 22的方法可包含藏鑛、印刷、電鍵、無電電錢以及常用 的化學氣相沈積（CVD)法，例如利用電化學電的 (electrochemical plating ; ECP)形成銅層 22。在一示範故 實施例中，銅層22的厚度大於25/zm。在另一示範性實 0503-A34880TWF/kelly 10 201138040 施例中，銅層22的厚度大於4〇//m，例如銅層22的厚 度介於約40-50/zm之間，約為45//m，或者介於約4〇_7〇 /z m之間，雖然其厚度也可以更大或更小。銅層22形成 柱狀’因此之後可稱為銅柱22。 然後，如第5圖所示，進行遮罩拉回（puUback)製程， 使得遮罩層20從銅柱22的侧壁22s被拉回，以加寬開 口 21，並在銅柱22的侧壁22s與擴大的開口 21，，的内部 周圍之間留下空隙24。遮罩拉回製程包含微影技術以及/ • 或蝕刻製程，其移除一部份的遮罩層20。 參閱第6圖，在產生的結構上藉由電解製程鍍上保 護層26’保護層26覆蓋銅柱22的上表面22t，並且填充 在銅柱22的侧壁表面22s與遮罩層20之間的空隙24 中。保護層26是藉由電鍍製程從電解槽（electrolytic bath) 中形成的金屬層，其沈積的金屬並未特別限定，此金屬 可以是鎳（Ni)、銅（CU)、銀(Ag)、金(Au)、鈀（Pd)、鉑（Pt)、 錫（Sn)、鋅（Zn)、貴重金屬或前述之組合。電解槽通常含 • 有更多進行沈積製程所需的成分，以及改善沈積金屬層 的品質所需的成分。這些物質例如為晶粒細化劑 (grain-refining agent)、潤濕劑（wetting agent)、光亮劑 (brightener)、錯合劑（complexing agent)以及抑制劑 (inhibitor)。當沈積製程實行時，這些有機以及/或無機添 加物/成分會從電解槽中更快或更慢地消耗、破壞或移 除。因此，這些成分的濃度會隨著時間更快或更慢地降 低。 在一實施例中，保護層26是經由鎳電鍍製程所形成 0503-A34880TWF/ke1Iy 11 201138040 包含將物體放置在以錄作為陰極的電解槽中， i要沈積的金屬棒也放置在此電解射，並與陽極 ^-旦施加電壓，要沈積㈣正離子會朝向負極遷移， 在此沈積形成金屬層。所產生的鎳層中的主要雜質 可包含碳(〇、氫⑻以及/或硫⑻，藉由此方法產 純度錄層只具有極少量的雜質，雜質的濃度取決於製： 控制而改變’電解的錄沈積所含㈣含量少於0.01重量 百分比。 里 在另-實施例中，保護層26是經由銅電錢製程所形 成的銅層’在電解射具有專㈣有機以及/或無機添加 ^ ’所產生的銅層中的主要雜質可包含氣(Ο)、硫⑻、 厌（）乂及/或氧(〇) ’藉由此方法I生的高純度銅層只含 有極>的雜質’雜質的濃度取決於製程控制而改變。電 解的銅沈積所含有的納(Na)含量少於G.G1重量百分比， 以及鐵(Fe)，量少於_重量百分比。在其他實施例中， 保濩層26是經由銀電鍍製程所形成的銀層，在電解槽中 具有專用的有機以及/或無機添加物，所產生的銀層中的 主要雜質可包含卸(K)、碳(C)、氧(0)以及/或氮(N)。電解 的銀'尤積所含有的鈉(Na)含量少於〇.〇1重量百分比。在 其他實施例中’保護層26是經由金電鍍製程所形成的金 在電解槽中具有專用的有機以及/或無機添加物，所 ^生的金層中的主要雜質可包含硫（s)、鈦（Ti)、鈉（Na)、 = (=)、氯(Η)以及/或氧（〇)。電解的金沈積所含有的鉀(κ) 3里少於0.01重量百分比，以及氣（Cl)含量少於0.01重 量百分比。 〇503-A34880TWF/kell· 12 201138040 在形成保護層26之後，選擇性地在保護層26的上 表面26t上以及在擴大的開口 21”内形成覆蓋層28。覆蓋 層28可作為阻障層，以避免銅柱22内的銅擴散至接合 材料，例如銲錫合金中，接合材料係用於接合基底10至 外部特徵，防止銅的擴散可以增加封裝的可靠度以及增 加接合強度。覆蓋層28可包含金（Au)、錫（Sn)、錫錯 (SnPb)、銀（Ag)、鈀（Pd)、銦（In)、鎳鈀金（NiPdAu)、鎳 金（NiAu)、其他相似的材料，或藉由電鍍法形成的合金。 φ 覆蓋層28的厚度約為l-10#m，在一些實施例中，覆蓋 層28為多層結構，包含Au、Pd、Ni合金、Au合金或 Pd合金。在一些實施例中，覆蓋層28為銲錫層，由Sn、 SnAg、Sn-Pd、SnAgCu(具有的Cu重量百分比少於〇.3%)、 SnAgZn、SnZn、SnBi-In、Sn-In、Sn-Au、SnPb、SnCu、
SnZnln或SnAgSb等，藉由電鍍製程形成。在一些實施 例中，覆蓋層28為多層結構，包含金屬層與録錫層。 參閱第7圖’移除遮罩層20，暴露出在擴大的開口 # 21”内形成之金屬結構以及底下的凸塊下金屬層18。在此 例中，遮罩層20是乾膜，其可以使用驗性溶液移除。如 果遮罩層20是由光阻形成，則可以使用丙酮（acetone)、 N-曱基0比π各烧酮（n-methyl pyrrolidone ; NMP)、二曱基亞 砜（dimethyl sulfoxide ; DMSO)、二甘醇胺（aminoeth〇xy ethanol)以及類似的溶劑移除。 然後，如第8圖所示’使用金屬結構作為遮罩，將 凸塊下金屬層18暴露出來的部分蝕刻，暴露出底下的高 分子層16的表面區16s。在一示範性實施例中，餘刻凸 0503-A34880TWF/keIly 13 201138040 塊下金屬層18的步驟為乾蝕刻或濕蝕刻，濕钱刻例如為 使用氨酸（ammonia-based acid)進行的等向性濕姓刻’或 者乾蝕刻製程，例如為標準的反應式離子蝕刻法（reactive ion etch ; RIE)程序。因此，所完成的凸塊結構包含在金 屬墊區域12上形成的凸塊下金屬層18、在凸塊下金屬層 18上形成的銅柱22、在銅柱22的上表面22t及侧壁表面 22s上的保護層26，以及在保護層26的上表面26t上的 選擇性覆蓋層28。因為保護層26是電解金屬層，可利用 感應耦合電漿(ICP)或掃瞄式電子顯微鏡能量分散X射線 能譜分析系統（SEM-EDX)進行分析，結果顯示在保護層 26内關鍵性的雜質含量非常低（少於0.01 wt%)。接著，基 底10被切割並封裝在封裝基底或另一晶粒上，並利用錫 球或銅凸塊固定在封裝基底或其他晶粒上的墊片上。 此揭示提供由電解金屬層形成的侧壁保護層’以避 免銅柱側壁氧化，並且增加在銅柱侧壁與後續形成的底 部填充材料之間的黏著力。相較於傳統的浸錫（immersion Sn)製程，以及接著進行退火製程的方法，在凸塊下金屬 層的蝕刻步驟之前，於鋼柱側壁上以電鍍法形成保護層 可以節省製程成本，並且藉由控制電鍍製程的時間，很 容易調整膜的厚度’以避免底切（undercut)問題發生，並 且克服Ni突出（overhanging)的結構產生。再者，凸塊結 構可以阻止應力集中在一些點上，並且因而解決從銅柱 側壁上剝離或脫層的問題。 雖然本發明已揭露較佳實施例如上，然其並非用 以限定本發明，在此技術領域中具有通常知識者當可 0503-A34880TWF/kel!y 14 201138040 瞭解，在不脫離本發明之精神和範圍内，當可做些許 更動與潤飾。因此，本發明之保護範圍當視後附之申 請專利範圍所界定為準。
0503-A34880TWF/kelly 15 201138040 【圖式簡單說明】 第1至8圖係顯示依據一示範性實施例，形成銅柱 凸塊的方法之剖面示意圖。 【主要元件符號說明】 10〜基底； 12〜墊片區； 14〜純化層； 15、17、21〜開口； 16〜高分子層； 16s〜高分子層表面區； 鲁 18〜凸塊下金屬層； 20〜遮罩層； 21”〜擴大的開口； 22〜銅柱； 22t〜銅柱的上表面； 22s〜銅柱的側壁表面； 24〜空隙； 2 6〜保護層； · 26t〜保護層的上表面； 28〜覆蓋層。 0503-A34880TWF/kelly 16

Claims (1)

  1. 201138040 七、申請專利範圍： h一種積體電路元件，包括： 一半導體基底； 一凸塊下金屬層，設置於該半導體基底上； 鋼柱’设置於該凸塊下金屬層上，且具有一側壁 表面與一上表面；以及 保護層’ S又置於該銅柱的該侧壁表面與該卜表面 上，其中該保護層為一含鎳層，包括含量小於0.01重量 百分比的碟。 2.如申請專利範圍第1項所述之積體電路元件，其中 該含錄層包括含有硫。 3·如申請專利範圍第1項所述之積體電路元件，更包 括一覆蓋層設置於該銅柱上表面上的該保護層上，其中 該覆蓋層為一含金層或一銲錫層。 4. 一種積體電路元件，包括： 一半導體基底； 一凸塊下金屬層，設置於該半導體基底上； 導電柱，s史置於該凸塊下金屬層上，且具有一侧 壁表面與一上表面；以及 一保護層，設置於該導電柱的該側壁表面與該上表 面上其中該保護層由一電解金屬層形成。 5. 如申請專利範圍» 4項所述之積體電路元件，其中 該該保護層為-電解鎳層、一電解金層、一電解銅層或 一電解銀層。 6. 如申請專利範圍第4項所述之積體電路元件，更包 0503-A34880TWF/keliy 17 201138040 由兮層°又置於該導電柱上表面上的該保護層上，其 中該7覆_盖層為-含金層或—銲錫層，料妹為銅柱 •種凸塊結構的形成方法，包括： 提供一半導體基底； 形成一凸塊下金屬層在該半導體基底上； 形成-遮罩層在該凸塊下金屬層上 具有一開口，暴露出一部份的該凸塊下金屬層遮罩層 形成一銅層在該遮罩層的該開口内； 形成遮罩層的—部份，在該銅層與該遮罩層之間 及 進行一電解製程，以形成一金屬層填充該間隙；以 移除該遮罩層。 法 m 法 面1 ===第7項所述之凸塊結構的形成方 ' 日已錄或金’該銅層的厚度大於40# =申請專利範圍第7項所述之凸塊 其中該電解製程形成該金屬 形成方 战及金屬層，以覆蓋該銅層的表 10.如申請專利範圍第 法，更包括： 、α之凸塊結構的形成方 於移除該遮罩層之前，形成蓋 該開口内之該金屬層上。 復盖層在該遮罩層的 0503-A34880TWF/keliy 18
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US9006097B2 (en) 2015-04-14
US8492891B2 (en) 2013-07-23
US20130295762A1 (en) 2013-11-07
CN102237316A (zh) 2011-11-09
US20110260317A1 (en) 2011-10-27
TWI427751B (zh) 2014-02-21

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