CN103515341B - 晶圆焊垫的化镀镍凸块结构及其制造方法 - Google Patents
晶圆焊垫的化镀镍凸块结构及其制造方法 Download PDFInfo
- Publication number
- CN103515341B CN103515341B CN201210210960.1A CN201210210960A CN103515341B CN 103515341 B CN103515341 B CN 103515341B CN 201210210960 A CN201210210960 A CN 201210210960A CN 103515341 B CN103515341 B CN 103515341B
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- CN
- China
- Prior art keywords
- layer
- nickel plating
- those
- gold
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 170
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 85
- 238000007747 plating Methods 0.000 title claims abstract description 53
- 230000008859 change Effects 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 117
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052737 gold Inorganic materials 0.000 claims abstract description 46
- 239000010931 gold Substances 0.000 claims abstract description 46
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052709 silver Inorganic materials 0.000 claims abstract description 28
- 239000004332 silver Substances 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 25
- 239000003054 catalyst Substances 0.000 claims abstract description 24
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 18
- 239000011701 zinc Substances 0.000 claims abstract description 18
- 238000005470 impregnation Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000002386 leaching Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 11
- 238000002791 soaking Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910000159 nickel phosphate Inorganic materials 0.000 description 2
- JOCJYBPHESYFOK-UHFFFAOYSA-K nickel(3+);phosphate Chemical compound [Ni+3].[O-]P([O-])([O-])=O JOCJYBPHESYFOK-UHFFFAOYSA-K 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003751 zinc Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210210960.1A CN103515341B (zh) | 2012-06-20 | 2012-06-20 | 晶圆焊垫的化镀镍凸块结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210210960.1A CN103515341B (zh) | 2012-06-20 | 2012-06-20 | 晶圆焊垫的化镀镍凸块结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103515341A CN103515341A (zh) | 2014-01-15 |
CN103515341B true CN103515341B (zh) | 2016-12-21 |
Family
ID=49897819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210210960.1A Active CN103515341B (zh) | 2012-06-20 | 2012-06-20 | 晶圆焊垫的化镀镍凸块结构及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103515341B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11127704B2 (en) * | 2017-11-28 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with bump structure and method of making semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157473A (zh) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
TW201138040A (en) * | 2010-04-22 | 2011-11-01 | Taiwan Semiconductor Mfg | Integrated circuit devices and method of forming a bump structure |
CN202712167U (zh) * | 2012-06-20 | 2013-01-30 | 讯忆科技股份有限公司 | 晶圆焊垫的化镀镍凸块结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW518700B (en) * | 2002-01-07 | 2003-01-21 | Advanced Semiconductor Eng | Chip structure with bumps and the manufacturing method thereof |
-
2012
- 2012-06-20 CN CN201210210960.1A patent/CN103515341B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157473A (zh) * | 2010-02-11 | 2011-08-17 | 台湾积体电路制造股份有限公司 | 半导体装置及其制造方法 |
TW201138040A (en) * | 2010-04-22 | 2011-11-01 | Taiwan Semiconductor Mfg | Integrated circuit devices and method of forming a bump structure |
CN202712167U (zh) * | 2012-06-20 | 2013-01-30 | 讯忆科技股份有限公司 | 晶圆焊垫的化镀镍凸块结构 |
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Publication number | Publication date |
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CN103515341A (zh) | 2014-01-15 |
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Effective date of registration: 20191127 Address after: 11, Lane 17, section 3, Nanshan Road, Luzhu Township, Taoyuan County, Taiwan, China Co-patentee after: XIAMEN MSSB TECHNOLOGY CO.,LTD. Patentee after: MAO BANG ELECTRONIC CO.,LTD. Address before: Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210712 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: XIAMEN MSSB TECHNOLOGY Co.,Ltd. Address before: 11, Lane 17, section 3, Nanshan Road, Luzhu Township, Taoyuan County, Taiwan, China Patentee before: MAO BANG ELECTRONIC Co.,Ltd. Patentee before: XIAMEN MSSB TECHNOLOGY Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: XIAMEN MSSB TECHNOLOGY CO.,LTD. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230727 Address after: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: Jingwang Semiconductor (Xiamen) Co.,Ltd. Patentee after: Jingwang Semiconductor (Shandong) Co.,Ltd. Address before: 361101 room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee before: Jingwang Semiconductor (Xiamen) Co.,Ltd. |