TW201026877A - Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) - Google Patents
Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) Download PDFInfo
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- TW201026877A TW201026877A TW098134833A TW98134833A TW201026877A TW 201026877 A TW201026877 A TW 201026877A TW 098134833 A TW098134833 A TW 098134833A TW 98134833 A TW98134833 A TW 98134833A TW 201026877 A TW201026877 A TW 201026877A
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- Prior art keywords
- amorphous carbon
- gas
- substrate
- processing chamber
- plasma
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- 238000000034 method Methods 0.000 title claims abstract description 125
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 115
- 238000000151 deposition Methods 0.000 title abstract description 90
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 108
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- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 44
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 44
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
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- NLMBNVBBHYNBQY-UHFFFAOYSA-N [C].[Ru] Chemical compound [C].[Ru] NLMBNVBBHYNBQY-UHFFFAOYSA-N 0.000 claims 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3146—Carbon layers, e.g. diamond-like layers
Description
201026877 六、發明說明: 【發明所屬之技術領域】 本發明實施例大體而言係有關於積體電路的製造,並 且更明確地說,係有關於在一半導體基材上沈積一無定 形碳層。 【先前技術】 φ 積體電路已演進為可容納數百萬個電晶體、電容器和 電阻器在單一個晶片上的複雜元件。晶片設計的進化持 續要求更快的電路及更大的電路密度。對於更快的電路 以及更大的電路密度之要求也對用來製造此類積體電路 的材料加諸相對應的要求。明確地說,隨著積體電路零 組件的尺寸縮小至次微米尺寸,不僅必須使用低電阻係 數的導電材料,例如銅,以改善元件的電氣效能,並且 參也必須使用低介電常數絕緣材料,常稱為低k介電材 料。低k介電材料一般具有低於38的介電常數。 製造具有低k介電材料以及極少或沒有表面缺陷或特 徵結構變形的元件是困難的。介電常數低於約3 〇的低k 介電材料常是多孔且容易在隨後的製程步驟期間到傷或 受損,因此增加缺陷形成在該基材表面上的可能性。此 類低k介電材料通常是易碎的且可能在習知研磨製程下 變形,例如化學機械研磨(CMP)。一種限制或減少此類 低k介電材料的表面缺陷及變形的解決方法是在圖案化 4 201026877 及蝕刻之前,先在暴露出的低k介電材料上沈積硬光 罩。該硬光罩避免脆弱的低k介電材料損壞及變形。此 外,硬光罩層結合習知微影技術可作用為钱刻光罩,以 避免低k介電材料在餘刻期間被除去。 此外,硬光罩幾乎在積體電路製造製程的每-個步驟 中使用’用於前端和後端製程兩者。隨著元件尺寸縮小 以及圖案結構日益複雜和難以製造,韻刻硬光罩更形重
要,因4現行《阻無法符合银刻抗性要纟,並且光阻僅 是用來進行影像轉移而非在微影和_製程中做為儀刻 光罩。反之,接收影像圖案的硬光罩日漸成為在下方層 中有效蝕刻圖案的首要材料。 無定形氫化碳是一種可用來做為金屬、無定形矽、以 及介電材料,例如二氧切錢切㈣,除了其他之 外’的硬光罩之材料。無定形氫化碳,也稱為無定形碳 並可表示為a_C:H或a_c:H’被視為是無長程結晶序的 碳材料,且可含有重要的氫含量,例如約i〇“5的氫 原子.百分比等級。已觀察到無定形碳擁有化學惰性、光 學透明性、以及良好的機械性fe雖然可用若干技術來 沈積a_C:H膜,但電衆增強化學氣相沈積(PECVD)因其 成本效益及薄膜性質可調性而廣為使用。在一典型 PECVD製程巾’-錢化合物來源,例如承載在一載氣 中的氣態碳氫化合物或液態碳氫化合物,係經通入一 PECVD腔室内。㈣在該腔室内起始電衆,以產生激發 的CH-自由基。該等激發的自由基化學性鍵結至設置在 5 201026877 該腔室内的t _ ^ 材之表面’在其上形成預期的a-C:H膜。 就=光罩層係'沈積在具有形貌特徵結冑的基材上之應 用β該硬光罩層必須共形覆蓋該形貌特徵結構的所 有表面此外’隨著特徵結構尺寸縮小,由於光波長和 圖案尺寸的限制’光阻材料難以正確轉移圖案。因此, 日漸需要新的製程和材料來滿足這些挑戰,其中硬光罩 件之關鍵尺寸的有效轉移變得不可或缺。 硬光罩層沈積共形性在具有下方形貌的基材上是很難實 現的’例如用來對準該圖案化製程的對準鍵。第1圖示 出具有特徵結構111及形成在其上之非共形無定形碳層 112的基材1〇〇之概要剖面圖。因為非共形無定形碳層 U2並非完全覆蓋特徵結構111的侧壁114,隨後的蝕刻 製程可能造成有害的側壁! 14腐蝕。侧壁i 14由非共形 無定形碳層112完整覆蓋的缺乏也可能造成非共形碳層 112下方材料的光阻毒化,其已知會損傷電子元件。 φ 因此,存有對於一種可用於積體電路製造之可共形沈 積在具有形貌特徵結構的基材上之材料層的沈積方法之 需要。 【發明内容】 本發明實施例提供一種處理基材的方法,例如藉由在 該基材上沈積一無定形碳層。該方法,根據一第一實施 例’包含將一基材設置在一基材處理室内,將碳對氫原 6 201026877 子比大於1:2的一碳氫化合物來源通入該處理室,將選 自由氫氣、氦氣、氬氣、氮氣、及其組合物所組成的族 群之一電漿起始氣體通入該處理室,並且該碳氫化合物 來源的體積流速對該電漿起始氣體的體積流速比為1:2 或更大’在該處理室内以1瓦/平方公分或更低的rF 功率、2托耳或更高的壓力、以及約3〇〇〇c至約48〇。(:的 溫度產生一電漿,以及在該基材上形成一共形無定形碳 層。 在另一實施例中,提供一種處理一基材的方法,其包 含執行一沈積循環’包含在該基材的一表面上形成一共 形無定形碳材料,以及使一淨化氣體流動通過該處理 室’以及重複該循環2至50次之間。 在另一實施例中’提供一種處理一基材的方法,其包 含將一基材設置在一基材處理室内,將碳對氫原子比大 於1.2的一碳氫化合物來源通入該處理室,將選自由氫 Φ 氣、氦氣、氬氣、氮氣、及其組合物所組成的族群之一 電聚起始氣體通入該處理室,並且該碳氫化合物來源的 艘積流速對該電漿起始氣體的體積流速比為1:2或更 大’其中該碳氫化合物來源和該電漿起始氣體係利用設 置在距離基材表面400密爾和600密爾之間的一氣體分 配器通入該處理室,在該處理室内以1瓦/平方公分或 更低的RF功率以及約〇ec至約1 〇〇°c之間的溫度產生一 電漿’以及在該基材上形成一共形無定形碳層。 7 201026877 【實施方式】 在此所述實施例大體而言提供在一化學氣相沈積系統 内沈積具有改善的共形性之無定形碳材料(a_c.H)的方 法。一個層的共形性通常是用沈積在一特徵結構側壁上 之一層的平均厚度對相同沈積層在該基材範圍,或上表 面’上的平均厚度之比例(其可表示為百分比)來量化。 觀察到利用在此所述方法沈積的層具有大於約3〇%,例 φ 如70°/〇或更尚,約7 : 1〇或更大,例如約80。/。或更高, 約4 : 5或更大’至約100% ’約! : !的共形性。例如, 會認定第1圖所示之先前技藝非共形無定形碳層112具 有〇%共形性,因為在侧壁丨14上缺乏層沈積。 明確地說,提供一改善的a_c:H層共形沈積之方法。 共形沈積可藉由使用碳對氫比例為1:2或更高的前驅 物,例如碳對氫比例為2: 3或更高,利用選自由氦氣、 氫氣、氮氣、氬氣、或其組合物所組成的族群之電漿起 • 始氣體’以增加的前驅物對電漿起始氣體流速,以增加 的沈積壓力,以增加的沈積溫度,以較低的rf功率應 用,利用具有降低的沈積速率之電漿環境,藉由在多個 層内沈積無定形碳,及其組合來改善。此間沈積製程可 在一適合的處理系統内執行。 第3圖係一基材處理系統’系統3〇〇,的概要示意圖, 其可用來進行根據本發明實施例之無定形碳層沈積。適 合系統的範例包含CENTURA®系統,其可使用DxZ™處 8 201026877 理室,PRECISION 5000®系統,PR〇DUCERTM系統例 如PRODUCER SE™處理室和pr〇ducer GTTM處理室 所有皆可由加州聖塔克拉拉的應用材料公司購得。 系統300包含製程腔室325、氣體分配盤33〇、控制單 元3 1 0、及其他硬體零組件,例如電源和真空幫浦。在 本發明中使用的系統之一實施例的細節在共同讓渡之 2002年4月2號核准之美國專利第6,364 954號之“出叻
TemperatUre Chemical Vapor Deposition Chamber,,中描 述’其在此藉由引用的方式併入本文中。 該製程腔室325通常包含基材支撐座35〇,其係用來 支撐一基材,例如一半導體基材39〇。此基材支撐座35〇 在該製程腔室325内利用連接至支桿36〇的位移機構(未 不出)在垂直方向上移動。取決於製程,可在處理前先將 該半導體基材390加熱至一預期溫度^該基材支撐座35〇 係利用一嵌入式加熱器元件37〇加熱。例如,該基材支 ❹ 撐座350可藉由從一電源供應器3〇6施加電流至該加熱 器το件3 70來阻抗加熱。該半導體基材39〇轉而由該基 材支撐座3 50加熱。一溫度感應器372,例如一熱電偶, 也嵌入在該基材支撐座350内以監控該基材支撐座35〇 的溫度。測得的溫度被用於一回饋迴路中以控制用於該 加熱器元件370的電源供應器3〇6。該基材溫度可保持 或控制在選用於特定製程應用的溫度下。 使用一真空幫浦302來排空該製程腔室325並在該製 程腔室325内維持適當的氣流和壓力。一喷頭32〇,製 201026877 程氣體藉其通入製程腔室325内,係設置在該基材支撐 座3 50上方’並且適於提供均勻分佈的製程氣體至製程 腔室325内。該喷頭32〇係連接至一氣體分配盤33〇, 其控制及供應用於該製程程序不同步驟内的各種製程氣 體。製程氣體可包含一碳氫化合物來源及一電聚起始氣 體’並且在下方結合一例示氬氣稀釋沈積製程之敘述更 詳細描述。 該氣體分配盤330也可用來控制及供應各種氣化的液 態刖驅物。雖未示出’可氣化來自一液態前驅物供應源 的液態前驅物,例如,利用一液體注射蒸發器,並在載 氣存在下傳送至製程腔室325。該載氣通常是一種惰性 氣趙’例如氮氣,或一種鈍體,例如氩氣或氦氣。或者, 該液態前驅物可利用一熱及/或真空輔助氣相製程從一 安瓿氣化。 該喷頭320和基材支撐座350也可形成一對隔開的電 極。在該等電極之間產生電場時,通入腔室325内的該 等製程氣體被點燃成為電漿392。通常,該電場係利用 一匹配網路(未示出)連接該基材支揮座350至一單頻或 雙頻的射頻(RF)功率源(未示出)來產生。或者,該RF功 率源和匹配網路可連接至該喷頭320,或連接至該喷頭 320和該基材支撐座350兩者。電漿輔助化學氣相沈積 技術藉由施加電場至靠近該基材表面的反應區域,產生 一反應物種電漿來促進反應氣體的激發及/或分解。該 電漿内的物種之反應性減少發生一化學反應所需要的能 201026877 量’實際上降低此種電漿輔助化學氣相沈積製程所需的 溫度》 流經該氣體分配盤330的氣體和液體之適當控制及調 節係利用質流控制器(未示出)及例如電腦的控制單元 310來執行。該喷頭320容許來自該氣體分配盤330的 製程氣體均勻地分配及通入該製程腔室325内。例示 地’該控制單元310包含一中央處理單元(CPU)3 12、支 撐電路3 14、以及含有相關控制軟體3 16的記憶體。此 控制單元310負責基材處理所需之眾多步驟的自動控 制,例如基材傳輸、氣體流量控制、液體流量控制、溫 度控制、腔室排空等等。當該製程氣體混合物離開該喷 頭320時,該碳氫化合物的電漿辅助熱分解在該半導體 基材390表面3 95發生,致使一無定形碳層沈積在該半 導體基材390上。 沈積製程 . 本發明態樣提供a-C:H層改善的共形沈積。改善的共 形沈積可藉由使用碳對氫比例為1:2或更高的前驅物之 製程來實現’例如碳對氫比例為2: 3或更高,可利用選 自由氦氣、氫氣、氮氣、氬氣、或其組合物所組成的族 群之電漿起始氣體來實現,可以增加的前驅物對電漿起 始氣體流速來實現’可以增加的沈積壓力實現,可以增 加的沈積溫度實現,可以較低的RF功率應用實現,可利 用具有降低的沈積速率之電漿環境實現,可利用增加氣 體分配盤和基材表面之間的間距來實現,可藉由在多個 201026877 層内沈積無定形碳來實現,及其組合。咸信在此所述製 程提供降低的沈積速率及/或更等向的沈積製程,因 此,提供更為共形的沈積製程。 在沈積製程之一態樣中,一 a_C:H層係利用一製程來 形成,其包含通入一碳氫化合物來源及一電漿起始氣體 至一處理室内’例如在上面結合第3圖所述之製程腔室
3 25。該碳氫化合物來源係一或多種碳氫化合物,並且選 擇性地例如氬氣之載氣,的混合物。 該一或多種碳氫化合物可包含碳原子對氫原子比為 1 . 2或更尚的化合物,例如大於n 2。例如,觀察到2 : 3或更高的碳對氫(或氫的取代基,例如氟)比例,像從 3至2 : 1,例如從約2 : 3至約3 : 2,產生具有改善的 共形性之無定形碳膜層。咸信具有所述的碳對氫原子比 之此類碳氫化合物造成更為等向的沈積製程。 該等碳氫化合物可以部分或完全換雜,碳氮化合物的 衍生物也可受惠於本發明方法。衍生物包含n 氧-、氫氧根以及碳氳化合物的含硼衍生物。 般而β,可包含在該碳氫化合物來源内的碳氫化 物或其衍生物可由式CaHbFc表示,其中Α的範圍在' 和24之間’B的範圍在〇和5〇之間,c的範圍在。和 5〇之間…對B + c的比例是1:2或更高,例如大於 1:2。例如,A對B+c的比例可以是2:3或更高,例 如從2:3至2:卜並且在—進—步範例中,從2:3至 3:2。在一實施例中’其中C=〇,該碳氫化合物來源可 12 201026877
❷ 具備式CXHY,並且2/3<=x/y=<3/2 ’其中x/y是個別的 原子數。或者,就氧及/或氮取代化合物而言,該碳氫 化合物來源可用式CaHb〇cFdNe表示,其中A的範圍在 1和24之間,B的範圍在〇和50之間,c的範圍在0和 10之間’ D的範圍在〇和50之間,E的範圍在〇和1〇 之間’而A對B+C+D+E的比例是1 : 2或更高,例如大 於1 : 2。例如,A對B + C+D+E的比例可以是2 : 3或更 高,例如從2:3至2: 1,並且在一進一步範例中,從2: 3 至 3 : 2。 適合的碳氫化合物包含一或多種如下化合物,例如, 炔,像乙炔(C2H2),乙烯乙炔及其衍生物,芳香族碟氫 化合物,例如苯、苯乙烯、甲苯、二甲苯、吡啶、乙苯、 苯乙鲷、苯甲酸甲酯、乙酸苯酯、酚、甲酚、吱喃、以 及諸如此類,α -松油烯,異丙基甲苯,1,1,3,3,_四甲基 丁苯,第三丁醚,甲基丙烯酸甲酯,以及第三丁基糖基 醚,具備式CsH2和C5H4的化合物,鹵化的芳香族化合 物,包含氟苯、二氟苯、四氟苯、六氟苯及諸如此類。 其它適合的碳氫化合物包含烯,例如乙烯、丙歸、丁婦、 戊婦、及諸如此類’二稀,例如丁二烯、異戊二稀、戊 二婦、己二稀及諸如此類,以及由化的缔,包含氣乙稀、 二氟乙烯、三氟乙烯、四氟乙烯、氣乙烯、二氯乙稀、 三氟乙烯、四氯乙烯、以及諸如此類。碳原子對氣原子 比大於1: 2的前驅物之一範例是CUH2 ’其可以是丁 _ 炔。 13 201026877 此外,本發明預期使用碳原子對氫原子比為3:〖或更 高的前雜物’像5: 1,例如1〇: 1或更高。 咸信隨著礙對氫比例增加,碳原子會在沈積期間與相 鄰的碳原子鍵結,藉由形成複雜的三維短程結構網路而 造成沈積膜較佳的共形性。 該a-C:H沈積製程包含使用一種電漿起始氣體,其係 在該碳氫化合物之前及/或與其同時通入該腔室,並且 起始一電漿以開始沈積。該電漿起始氣體可以是一種高 游離電位氣趙’包含但不限於’氦氣、氫氣、氮氣、氬 氣及其組合物’其中氦氣是較佳的。該電漿起始氣體也 可以是一種化學惰性氣體,例如氦氣、氮氣、或氬氣是 較佳的。適合的氣體游離電位是從約5 eV(電子電位)至 25 eV。該電漿起始氣體可在該碳氫化合物之前通入該腔 室内,這容許形成穩定的電漿並降低電弧的可能性。已 觀察到使用具有高游離電位的電漿起始氣體可在沈積期 間提供較少的薄膜非等向性蝕刻,因此改善無定形碳膜 沈積的共形性。做為稀釋氣體或載氣的惰性氣體,例如 氬氣,可連同該電漿起始氣體、該碳氫化合物、或其組 合物一起通入^ 該碳氫化合物和電漿起始氣體可以從約1:100或更高 的碳氫化合物對電漿起始氣流比例通入,例如,從約i : 100至100 : 1,像就該無定形碳沈積而言從約1 : 10至 約10:1。在一實施例中,該碳氫化合物對電漿起始氣 流比例可從約1 : 5或更高,像從約1 : 5至約2 : 1,例 201026877 如從約I:2至約I:1,可用於該無定形碳沈積。已觀 察到增加碳氫化合物對電漿電漿起始氣流比例可提供優 於較低比例的改善之共形性。 該a-C:H層可從該處理氣鱧沈積,藉由將腔室壓力保 持在約2托耳或更高,例如從約2托耳至約2〇托耳,並 且在一實施例中,約7托耳或更高,例如從約7托耳至 約9托耳。已觀察到共形性隨著壓力增加而增加,並且 攀 咸信離子在抵達該基材之前更為分散,因此喪失一些姓 刻能力’並且更為分散的自由基以更隨機且等向的角度 抵達該基材表面,以利更加等向且共形的薄膜沈積。 該a-C:H層可在基材溫度維持在從約〇。〇至約8〇〇。(:的 腔室内從該礙氫化合物來源沈積,例如在從約〇。〇至約 100°C的溫度下’或在從約30(TC至約480°C的溫度下, 例如,從約400°C至約450。(:。已觀察到在增加的溫度下 沈積無定形碳膜層會降低沈積速率,因此改善共形性。 ❹ 此外,在增加的溫度下’吸附的碳前驅物之擴散性或流 動性會增加,導致更加等向的沈積和改善的共形性。 此外,該a-C:H層也可以更為共形的方式沈積,當該 層係在將基材溫度維持在低於約1 〇〇°C的腔室内從該碳 氫化合物來源沈積時。例如,一 a-C:H層係藉由透過與 該基材表面隔開310密爾的噴頭提供3800 seem的C2H2 及6000 seem的氦氣至維持在9托耳壓力以及75 °C下的 製程腔室,並藉由應用30瓦的高頻功率產生電漿來沈 積。分析的沈積層展現出77.8%的共形性(共形性的量度 15 201026877 係定義為沈積在一特徵結構的側壁上之無定形碳層的平 均厚度s對基材上表面上的無定形碳層的平均厚度τ的 比例)。同樣地,也觀察到該特徵結構底部上的無定形碳 層的厚度對比於基材上表面上的無定形碳層的厚度T的 比例是72.2%。 同時驚人且不預期地發現到在降低的氦氣流逮下,例 如約3000 sccm的氦氣’溫度低於1〇〇。〇的沈積在—特徵 結構定義底部上的沈積厚度方面產生實質改#,與在密 集的特徵結構定義,即每16〇〇平方奈米約9個特徵結構 上之該特徵結構底部上的無定形碳層之厚度對比於基材 上表面上的無^形碳層的厚度τ之比例是72以相比。 也觀察到所沈積的無定形碳層之共形性隨著沈積該層 時該喷頭和基材表面間的間距增加而改善,例如介於· 密爾和600密爾之間的間距,例如約5〇〇密爾的間距。 例如,-第二無定形碳層與前段在相同的低溫沈積條件 下沈積,但是該喷頭間距為5〇〇密爾,與31〇密爾相較。 分析的沈積之第二層展現出9().9%至9ι 7%的共㈣(共 形性的量度係定義為沈積在—特徵結構的侧壁上之盖定 形碳層的平均厚度S對基材上表面上的無定形碳層的平 均厚度Τ的比例)。同樣地,也觀察到在具有不同密度的 特徵結構圊案上,例如密集的特徵結構定義,即每1600 平方奈米約4至2〇個特徵結構,例如9個特徵結構定 義,對比於較不密集的,每16〇〇平方奈米低於4個特徵 結構定義’例如1個特徵結構定義,的特徵結構定義, 16 201026877 該特徵結構底部上的無定形碳層的厚度對比於基材上表 面上的無定形碳層的厚度τ的比例是9〇 9%至91 7%,。 也觀察到該500密爾間距的無定形碳層具有約138埃 /分鐘的沈積速率,與該310密爾間距的沈積製程之3〇〇 埃/分鐘的沈積速率相比。 該碳氫化合物纟源及-電漿起始氣體係經通入該腔室 内,並且起始一電漿以開始沈積。可用一雙頻rf i生該電咸信一雙頻RF功率應用可提供通量和離子 能量的獨立控制,因為咸信衝擊該薄膜表面的該等離子 之能量會影響薄膜密度。相信該高頻電浆控制電衆密 度,而一低頻電漿控制衝擊該基材表面的離子之動能。 具有混合的RF功率之雙頻來源提供範圍從約1〇厘112至 約30MHz的高頻功率,例如約13 56 MHz,以及範圍從 約10 kHz至約1 MHz的低頻功率,例如約35〇 kHz。當 使用一雙頻RF系統來沈積一 a_c:H膜時,該第二RF# φ 率對總混合頻率功率的比例較佳地低於約0.6至 1.0(0.6.1)。可基於基材尺寸和所用設備來改變所施加的 RF功率和一或多種頻率的使用。可使用一單頻功率 應用’並且通常是應用如在此所述之高頻功率。 可藉由施加功率密度對基材表面積從約〇〇1瓦/平方 公分至約5瓦/平方公分的RF功率來產生電漿,例如從 約〇·01至約1瓦/平方公分,例如約0.1瓦/平方公分。 就一 300亳米的基材而言,該功率應用可從約ι瓦至約 2000瓦’例如從約瓦至約200瓦,例如約20瓦。電 17 201026877 極間距,即該基材和該喷頭之間的距離,可以是從約200 密爾至約1000密爾。 雖未遵循任何特定理論,但相信電漿製程藉由減少能 量化離子數目來降低無定形碳沈積速率,使碳氫化合 物,即自由基’以更隨機的沈積圖案抵達該基材表面, 因此提供所形成的薄膜成長更等向的沈積圖案而改善共 形性。也觀察到該降低的電漿沈積可提供較低的沈積速 率’其容許吸附的碳前驅物在該基材表面上擴散,而提 ·#更為共形的膜層。 處理300毫米圓形基材之一例示沈積製程運用一種電 聚起始氣體’例如氦氣’及一種碳氫化合物來源,例如 乙炔(CzH2)。該製程可包含供應流速從約4〇〇 sccm至約 8000 SCCm的電漿起始氣體,例如氦氣,供應流速從約 400 seem至8000 seem的碳氳化合物來源,例如乙炔 (CzH2),施加從約1〇瓦至約2000瓦的雙頻111?功率,將 φ 腔至壓力維持在從約2托耳至約20托耳,以及將腔室溫 度維持在從約25°C至約475°C。此製程範圍提供a_C:H 層範圍在約10埃/分鐘至約30000埃/分鐘内的沈積速 率以及從約30%至約100%的共形性(沈積在一特徵結構 側壁上之一層的平均厚度對相同沈積層在該基材範圍, 或上表面,上的平均厚度之比例)。熟知技藝者,在閱讀 此間揭示後,可計算出適當的製程參數,以製造沈積速 率不同的a-C:H膜。 在該沈積製程之一實施例中,執行複數個獨立的無定 18 201026877 形碳沈積以形成一無定形碳層。在該複合沈積製程之一 態樣中’-沈積步驟,如在此所述者之後緊接一暫停 ,驟’其中電漿起始氣體、—稀釋氣體、及/或前驅物 可乂降低或無沈積速率的狀態流通。適合的電裝起始氣 鱧、稀釋氣體、及/或前驅物可以從約1〇〇 s_至約 40000 seem的流速通入該腔室内。若使用該電漿起始氣 體即/或-稀釋氣體,可為該暫停步驟起始__電聚。該 ❹沈積和暫停步驟然、後可重複直到得到預期厚度為止,並 且可以循環1至100次,例如循環1〇至5〇次例如循 環30次,或者是沈積約1%至約1〇〇%之間的無定形碳材 料厚度,例如從約2。/。至約10%的循環,例如約3 3%。 一獨立週期的每一次循環可沈積從約1埃至約1〇〇〇埃厚 的無定形碳材料’以形成厚度從約1〇埃至約15〇〇〇埃的 無定形碳層。該循環沈積製程可使用一或多種上述製程 參數調整。 φ 或者,也可抽出氣體,然後在沈積步驟之前或暫停步 驟期間再次通入。 咸信一多層沈積方案會降低有效薄膜沈積速率,改善 共形性。此外,新沈積的碳原子可在該暫停步驟期間擴 散,更進一步改善共形性❶一般而言,共形性在一特定 無定形碳膜層厚度的層數量增加時(較薄的個別層厚度 及較多次重複),並且在暫停步驟時間對沈積步驟時間的 比例較大時(低的有效沈積速率)獲得改善。例如,暫停 步驟時間對沈積步驟時間的比例可從約100 : 1至約!: 1 〇〇。藉由調整各別層的厚度和暫停對沈積時間比例,可 19 201026877 調整無定形碳膜層的共形性 另一種樞紐以改善一特定電 條件(前驅物、氡體、流速、 共形性。 以符合元件需求,因而提供 衆輔助化學氣相沈積之沈積 壓力、溫度、RF功率等)的 本發明方法之—± 轨+ 主要優勢在於優於其他a-C:H沈積製 程的共形性增強,如笙?阁拼- , 如第2圖所不。第2圖示出具有一特 徵結構2(Π及-無定形碳層2()2形成在其上的基材細 之概要面圖。無定形碳層202示出利用本發明方法沈 帛薄膜的’、型外觀。就質而言,無定形碳層202係高 度共形且το全覆蓋特徵結構2〇1的侧壁和底部Μ〗。 就量而言,無定形碳層2〇2可擁有從約3〇%至約1〇〇%等 級的共形性。例如從約鳩至約9G%,其中共形性(共形 性董度)係定義為沈積在側壁2〇4上的無定形碳層2〇2之 平均厚度S對基材200上表面205上的無定形碳層2〇2 之平均厚度T的比例。再參見第!圖,非共形之無定形 碳層202係經示為具有約5%的共形性。 利用在此所述製程沈積之無定形碳材料的範例如下。 ® 比較範例A: 一供比較的無定形碳沈積製程範例包含 提供約400 seem的氦氣流速至該處理室,約8〇〇() sccm 的氬氣流速至該處理室’提供約6000 seem的C3H6流速 至該處理室,施加約1250瓦的高頻rf功率(13 56 MHz) ’將沈積溫度維持在約3〇〇它,將腔室壓力維持在 約4.5托耳’連同約380密爾的間距以在密集區域上以 及開放區域階梯覆蓋(共形性量度)產生共形性約2〇%的 無定形碳層。 在一第一範例中,藉由提供約4000 sccrn的氦氣流速 20 201026877 ^該處理室,提供約2000 sccm的C#2流速至該處理 至’施加約50瓦的高頻RF功率(13.56 MHz),將沈積溫 度維持在約400。(:,將腔室壓力維持在約9托耳,連同 約3〇〇密爾的間距來沈積一無定形碳層,產生187埃/ 分鐘的沈積速率,並且觀察到達成密集區域約83%至開 放區域階梯覆蓋(共形性量度)約96%的共形性。所有範 例皆在深寬比約2.1:1的特徵結構上執行。 在第一範例中,藉由提供約2000 seem的氦氣流速 至該處理室,提供約200〇 seem的C2H2流速至該處理 ® 室,施加約100瓦的高頻RF功率(13.56 MHZ),將沈積 溫度維持在約400°C,將腔室壓力維持在約9牦耳,連 同約300密爾的間距來沈積一無定形碳層,產生516埃 /分鐘的沈積速率,並且觀察到達成密集區域約82%至 開放區域階梯覆蓋(共形性量度)約86%的共形性。該第 一範例及該第二範例皆在深寬比約2.1:1的特徵結構上 執行。 在一第三範例中,藉由提供約4000 sccm的氦氣流速 © 至該處理室,提供約2000 sccm的C2HZ流速至該處理 室,施加約20瓦的高頻RF功率(13 56 MHz),將沈積溫 度維持在約400。(:,將腔室壓力維持在約9托耳,連同 約300密爾的間距來沈積一無定形碳層,產生64埃/分 鐘的沈積速率,並且觀察到達成密集區域約93%至開放 區域階梯覆蓋(共形性量度)約97%的共形性。 在一第四範例中,藉由提供約4000 sccm的氦氣流速 至該處理室,提供約2000 seem的CzH2流速至該處理 室,施加約1〇〇〇瓦的高頻RF功率(13 56 MHz),將沈積 21 201026877 溫度維持在約40(rc,將腔室壓力維持在約7托耳,連 同約31〇密爾的間距來沈積一無定形碳層。 在一第五範例中’利用沈積步驟之後緊接氦氣淨化步 驟之丨4次沈積循環來沈積一無定形碳層,該沈積步驟提 供約4〇〇〇 scem的氦氣流速至該處理室提供約2〇⑽ m的C2H2流速至該處理室’施加約1 〇〇瓦的高頻rf 功率(13.56 MHz),將沈積溫度維持在約3〇〇t:,將腔室 壓力維持在約9托耳,連同約300密爾的間距,產生9〇9 埃/分鐘的沈積速率,並且觀察到達成約84%的密集區 域覆蓋(共形性量度)。該氦氣淨化步驟係在相同製程參 數下執行,除了無流並且無施加RF功率之外。 在一第六範例中,利用沈積步驟之後緊接氦氣淨化步 驟之14 _人沈積循環來沈積一無定形碳層。該沈積步驟提 供約400 seem的低氦氣流速至該處理室,提供約4〇〇 seem的C2H2流速至該處理室,施加約1〇〇瓦的高頻好 功率(13.56 MHz)’將沈積溫度維持在約3G(rc,將腔室 壓力維持在約7托耳,連同約3〇〇密爾的間距,產生9〇9 粵埃/刀鐘的沈積速率,並且觀察到達成約。的側壁對 頂。P共形性’ 94%的側壁對底部共形性以及72%的底部 f頂°卩共形性。該氦氣淨化步驟係在相同製程參數下執 行除了無C2H2流並且無施加rf功率之外。 ,在第七範你J中,進行在不同功率範圍下沈積的無定 形碳層之比較。就兩個製程而言藉由提供約糊〇 的氦氣流速至該處理室,提供約2〇〇〇 的c而流速 〇該處理室’施加約5〇瓦或2〇瓦的高頻功率⑴% Hz)將沈積溫度維持在約4〇〇。〇,將腔室壓力維持在 22 201026877 =9托耳’連同約3⑻密爾的間距來沈積該無定形礙。 =0瓦沈積製程以沈積速率細埃/分鐘產生㈣的側 對頂部共形性,而該2G瓦沈積製程以沈積速率64埃 /刀鐘產生93-970/〇的側壁對頂部共形性。 在一第八範例中,進行循環相對於單一步驟沈積所沈 積出的無定形碳層之比較。就兩個製程而言藉由提供 約4000 sccm的氦氣流速至該處理室提供約“ο。 的QH2流速至該處理室,施加約1〇〇瓦的高頻rf功率 (56 MHz),將沈積溫度維持在約4〇〇乞,將腔室壓力 維持在約9托耳’連同約3〇〇密爾的間距來沈積該無定 形碳。該單—步驟沈積製程產生51%的側壁對頂部共形 性87/〇的側壁對底部共形性以及59%的底部對頂部共 形性。包含沈積之後緊接一氦氣淨化步驟之14次循環的 循環沈積步驟產生71%的側壁對頂部共形性,92%的側 壁對底部共形性以及77%的底部對頂部共形性。該氦氣 淨化步驟係在相同條件下執行,除了無施加RF功率並且 不提供C2H2之外。 • 在一第九範例中,進行兩種循環製程相對於單一步驟 沈積所沈積出的無定形碳層之比較。就兩個製程而言, 藉由提供約4000 sccm的氦氣流速至該處理室提供約 2000 seem的qH2流速至該處理室,施加約5〇瓦的高頻 RF功率(13.56 MHz),將沈積溫度維持在約4〇〇〇c,將腔 室壓力維持在約9托耳,連同約300密爾的間距來沈積 該無定形碳。該單一步驟沈積製程使用25瓦的RF功率 應用並產生密集結構之56%的侧壁對頂部共形性及開放 結構之87%的側壁對頂部共形性。該第一循環製程之第 23 201026877 一循環處理系列使用25次持續7秒、每一者20埃之上 述沈積和氦氣冷卻循環’產生密集結構之5 5 %的側壁對 頂部共形性及開放結構之82%的側壁對頂部共形性;而 該第二系列使用10次持續15秒、每一者50埃之沈積和 氦氣循環,產生密集結構之54%的側壁對頂部共形性及 開放結構之7 5 %的侧壁對頂部共形性。該第二製程之第 一循環處理系列使用25次每一者20埃之七秒鐘的沈積 循環,產生密集結構之78%的側壁對頂部共形性及開放 結構之89%的側壁對頂部共形性;該第二系列使用1〇次 每一者50埃之十五秒鐘的沈積循環,產生密集結構之 69%的側壁對頂部共形性及開放結構之89%的側壁對頂 邛共形性,而該第三系列使用25次每一者20埃之七秒 鐘的沈積和13秒鐘的穩定步驟循環,產生密集結構之 55%的侧壁對頂部共形性及開放結構之92%的側壁對頂 部共形性。 第4A-41圖係使用在此所述之無定形碳層蝕刻一材料 層之製程的概要側視圖。在一基材表面(未示出)上沈積 _ 。基底材料41〇,以開始形成一材料堆疊40(^該基底材 料可以是用來形成半導體元件之一或多種材料,包含矽 基材材料、氧化物材料、多晶石夕材料或諸如此類。在 該基底材料410上沈積一第一無定形碳層42〇,並且在 該第一無定形碳層420上沈積一第一抗反射層材料 430,如第4B圓所示。該無定形碳層可以是能夠從加州 聖塔克拉扳的應用材料公司購得之先進曝光圖樣薄膜 (APF)材料’或者’如在此所述之無定形碳材料。該第一 抗反射層材料43G係用來在微影圖案化製程期間控制光 24 201026877 線反射。該第一抗反射層材料43 0可包含二氧化矽、氧 氮化矽、氮化矽、或其組合物。該抗反射層材料可以是 勺從加州聖塔克拉拉的應用材料公司購得之darcTM 材料層。 可在該第一抗反射層材料上依序沈積一第二無定形碳 層440和一第二抗反射層材料45〇,如第圖所示。該 第一無疋形碳層440和該第二抗反射層材料 450可以是 如沈積層420和帛一抗反射層材#43〇者相同的材料。 然後在該第二抗反射層材料450上沈積一光阻層46〇, 例如光阻劑材料,如第4D圖所示。然後利用一微影製 程圖案化該光阻層’產生一圖案化光阻層461,如第4e 圖所不。形成在該光阻層461内的第一圖案462係利用 一或多個蝕刻製程首先蝕刻該第二抗反射層材料45〇, 然後蝕刻該第二無定形碳層44〇來轉移至該第二無定形 碳層440,而形成一圖案化的第二無定形碳層441〇如第 4F圖所不。該圖案化的第二無定形碳層441可做為下方 材料的硬光罩。該第二抗反射層材料45〇可利用該一或 # 多個餘刻製程或利用一分開的製程移除》 在該第一抗反射層材料430和該圖案化的第二無定形 碳層441上沈積一共形的無定形碳層47〇,如第4G圖所 示。該共形的無定形碳層可利用在此所述之任何製程沈 積。利用一非等向蝕刻製程圖案化該共形的無定形碳層 470 ’以提供側壁無定形碳材料471,如第々η圖所示。 該侧壁無定形碳材料471的存在容許第二圖案472形 成,其具有與否則可在正常情況下利用現行微影製程實 現者相比縮小的關鍵尺寸和特徵結構尺寸,即增加的圖 25 201026877 案密度。該圖案化的第二無定形碳層441結合該側壁無 定形碳材料471可做為下方的第一抗反射層材料43〇和 該第一無定形碳層420的硬光罩層。 然後钱刻該第一抗反射層材料43〇以形成具有該第二 圖案472之圖案化抗反射層431,如第41圖所示。在該 蝕刻製程期間或利用一後續製程除去該圖案化的第二無 定形碳層441和該側壁無定形碳材料471。然後蝕刻該 第一無定形碳層420以形成具有欲轉移至下方基底材料 410的第二圖案472之圖案化的第一無定形碳層421。然 • 後利用該圖案化的第一無定形碳層421做為硬光罩層來 蝕刻該基底材料410,如第4K圖所示,接著除去該圖案 化的第一無定形碳層421以提供含有具備該第二圖案 472的圖案化基底材料4Π之基材表面,如第圖所示。 在另一實施例中,為第4F-4L圖使用一圖案化光阻材 料來取代該圖案化的第二無定形碳層441,因此除去對 於第4C-4E圖之該圖案化的第二無定形碳層44〇和一第 一抗反射層材料450以及對應的沈積步驟和蝕刻步驟的 ❹ 需要。 第5A-5H圖係在一空間光罩雙重圖案化製程内使用在 此所述之無定形碳層之製程的概要側視圖。在一基材表 面上沈積一基底材料510,以開始形成一材料堆疊5〇〇。 該基底材料可以是用來形成半導體元件之一或多種材 料,包含矽基材材料、氧化物材料、多晶矽材料、或諸 如此類。在該基底材料510上沈積一第一無定形碳層 520’並且在該第一無定形碳層52〇上形成具有一第一圓 案532的圖案化光阻層530,如第5A圖所示》該無定形 26 201026877 碳層可以是能夠從加州聖塔克拉拉的應用材料公司靖得 之先進曝光圖樣薄膜(APF)材料,或者,如在此所述之無 定形碳材料。可利用一微影製程來圖案化該光阻層53〇1 然後使該圖案化光阻層530經受一修整製程藉此窄化 該圖案化光阻材料的寬度而形成由該經修整的光阻材料 31界疋之第一圖案533,如第5B圖所示。然後钱刻該 第一無定形碳層520以轉移該第二圖案533,而形成一 圖案化的無定形碳層521,如第5c圖所示。 % 然後鄰接該圖案化的無定形碳層521結構形成側壁間 隙壁540。間隙壁可包含一種蝕刻速率與該第一無定形 碳層或共形的無定形碳材料不同的可蝕刻材料。適合的 材料包含,例如,二氧化矽、氧氮化矽、氮化矽、或其 組合物《然後在該等侧壁間隙壁54〇及圖案化的無定形 碳層521結構上沈積共形的無定形碳材料之縫隙填補層 550,如第5E圖所示。可利用在此所述之任何製程來沈 積該共形的無定形碳材料。較佳的共形的無定形碳材料 是蝕刻性質與圖案化的無定形碳層521相似者。然後回 蝕該縫隙填補層550以暴露出該等側壁間隙壁540,如 第5F圖所示。接著蝕刻該等側壁間隙壁54〇以暴露出基 底材料510,界定出一硬光罩層551,如第5G圖所示。 然後可圖案化蝕刻該基底材料51〇以形成一圖案化基底 材料511 ’如第5H圖所示。 在另一製程中,在如第5D圖所示般鄰接該圖案化的無 定形碳層521結構形成該等側壁間隙壁54〇之後,接著 將該圖案化的無定形碳層521從該基材表面去除。該等 側壁間隙壁540於是形成一圖案,如第5E,所示,其可 27 201026877 用來做為該基底材料510的硬光罩。接著可圖案化蝕刻 該基底材料51〇以形成一圖案化基底材料511。 第6A-6J圖係使用在此所述之無定形碳層來蝕刻一材 料層,例如利用低於100度的無定形碳沈積製程,的製 程之概要侧視圖。在一基材表面(未示出)上沈積一基底 t料610,以開始形成一材料堆疊6〇(^該基底材料可以 疋用來形成半導體元件之一或多種材料包.含矽基材材 料、氧化物材料、多晶矽材料、或諸如此類。在該基底 材料610上沈積一第一無定形碳層620,並且在該第一 無定形碳層620上沈積一抗反射層材料63〇,如第66圖 所示。該無定形碳層可以是能夠從加州聖塔克拉拉的應 用材料公司購得之先進曝光圖樣薄膜(APF)材料,或者, 如在此所述之無定形碳材料。該抗反射層材料63〇係用 來在微影圖案化製程期間控制光線反射。該抗反射層材 料630可包含二氧化矽、氧氮化矽、氮化矽、或其組合 物。該抗反射層材料可以是能夠從加州聖塔克拉拉的應 用材料公司購得之DARC™材料層。 ® 然後在該抗反射層材料630上沈積一光阻層640,例 如一光阻劑材料’如第6C圖所示。接著利用一微影製程 圖案化該光阻層’產生一圖案化光阻層641,如第6〇圖 所示。該圖案化光阻層641形成一第一蝕刻圖案642。 利用在此所述製程及共形性共形地或實質上共形地在 該圖案化光阻層641上沈積一第二無定形碳層65〇,如 第6E圖所示。該共形的無定形碳層可利用在此所述之任 何製程沈積。在一範例中,該第二無定形碳材料係利用 低於100°C的沈積製程沈積。餘刻並圖案化該第二| 乃' """ 28 201026877 形碳層650以形成一第二蝕刻圖案652,其具有比該第 一蝕刻圖案縮小的,例如較窄的,特徵結構尺寸如^第 6F圖所不。利用一非等向蝕刻製程圖案化該共形的第二 無定形碳層650,以提供側壁無定形碳材料651。
該側壁無定形碳材料651的存在容許第二圖案652形 成,其具有與否則可在正常情況下利用現行微影製程實 現者相比縮小的關鍵尺寸和特徵結構尺寸,即增加的圖 案密度。藉由此製程’形成在該光阻層内之特徵結構定 義的尺寸,例如關鍵尺寸,可縮減(“縮小,,),以在下方層 内提供較精細的特徵結構圖案。該圖案化光阻層641社 合該側壁無定形碳材料651可做為下方的抗反射層材; 630和該第一無定形碳層62〇的硬光罩層。 _以該侧壁無㈣碳材料651及該光阻層641形成的第 :::圖案652係利用一或多個蝕刻製程首先蝕刻該抗 反射層材料630’如第6G圖般1錢刻該卜益定形 碳層㈣,如第6H圖般’來轉移至該第一無定形碳層 ,而形成-圖案化的第一無定形碳層621。該 =第一無㈣碳層621可做為下方基底材料㈣的硬光 :二:反射層材料631可在钱刻該下方材料之前利用 、一或多個蝕刻製程或利用-分開的製程移除。 =刻該第一無定形碳層62〇以形成具有欲轉移至 無K妯材料610的第二蝕刻圖帛652之圖案化的第-第' :無宕層62卜如第6H圖所示。然後利用該圖案化的 621做為硬光罩層來㈣該基底材料 第61圖所示,接著除去該圖案化的第—無定形 層以提供含有具備該第二姓刻圖案如的圖案化 29 201026877 基底材料611之基材表面,如第6J圖所示。 第7圖係在此設置在一半導體結構中的無定形唉層的 使用之概要側視圖。第7圖揭示利用在此所述製程之一 沈積的無定形碳層的使用,其係用來作為倒T形閘極7〇〇 的犧牲側壁光罩。在該基材710上沈積一通道氧化物層 720。在該通道氧化物層上沈積一摻雜的多晶矽層73〇, 並在該摻雜的多晶矽層730上沈積一高熱氧化物(HT〇) 層740〇在該高熱氧化物(HTO)740上沈積一光罩層75〇。 圖案化該光罩層750並钱刻該氧化物層740和該播雜的 ® 多晶矽層730,以形成特徵結構755。利用在此所述方法 之一沈積的無定形碳層760係沈積在該蝕刻基材表面 上,以形成所製造的特徵結構755之側壁覆蓋。 雖然前述係針對本發明實施例,但本發明之其他及進 一步實施例可在不背離其本範圍下設計出,並且其範圍 係由如下申請專利範圍界定。 【圖式簡單說明】 Φ …、 因此可以詳細暸解上述本發明之特徵結構的方式,即 對本發明更明確的描述’簡短地在前面概述過,可藉由 參考實施例來得到’其中某些在附圖中示出。但是應注 意的是,附圖僅示出本發明之一般實施例,因此不應視 為係對其範圍之限制’因為本發明可允許其他等效實施 例0 第1圖(先前技藝)係具有一特徵結構及一非共形無定 形碳層形成在其上的基材之概要剖面圖。 30 201026877 第2圓係具有一特徵結構及一無定形碳層形成在其上 的基材之概要刳面圖。 第3圖係可用來執行根據本發明實施例之無定形碳層 沈積的基材處理系統之概要示意圖。 第4A-4L圖係使用在此所述之無定形碳層來蝕刻一材 料層的製程之一實施例的概要側視圖。 第5A-5H及5E’圖係在一空間光罩雙重圖案化製程中 使用在此所述之無定形碳層的製程之一實施例的概要側 視圖。 第6A-6J圖係使用在此所述之無定形碳層來蝕刻一材 料層的製程之另一實施例的概要側視圖。 第7圖係在此設置在一半導體結構中的無定形碳層的 使用之概要侧視圖。 為促進了解,在可能時使用相同的元件符號來表示該 等圖式共有的相同元件》預期到一實施例的元件及/或 製程步驟可有利地併入其他實施例而不需特別詳述。 【主要元件符號說明】 100、200、710 基材 111、 201、755 特徵結構 112、 202、420、421、440、441、470、520、521、62〇、 621、650、760 無定形碳層 114、204 側壁 31 201026877 203 底部 205 基材上表面 300 基材處理系統 302 真空幫浦 306 電源供應器 310 控制單元 312 中央處理單元 314 支撐電路
316 控制軟體 320 喷頭 325 製程腔室 330 氣體分配盤 350 基材支撐座 360 支桿 370 加熱器元件 372 溫度感應器 390 基材 392 電漿 395 基材表面 400、500、600 材料堆疊 410、411、510、511、610、611 基底材料 43 0、431、450、63 0 抗反射層材料 460、461、53 0、531、640、641 光阻層 462 > 532 ' 642 第一圖案 32 201026877 471、 651 側壁無定形碳材料 472、 533、652 第二圖案 540 侧壁間隙壁 550 縫隙填補層 551 硬光罩層 700 閘極 720 通道氧化物層 730 多晶矽層 740 高熱氧化物層 750 光罩層 33
Claims (1)
- 201026877 七、申請專利範圍: 1.一種在一基材上形成一無定形碳層的方法,其至少包 含: 將一基材設置在一基材處理室内; 將碳對氮原子比大於1:2的一碳氫化合物來源通入 該處理室; 將選自由氫氣、氣氣、氬氣、氣氣、及其組合物所組 • 成的族群之一電聚起始氣體通入該處理室,並且該碳氫 化合㈣源的體積流速對該電聚起始氣體的體積流速比 為1 : 2或更大; 在該處理室内以1瓦/平方公分或更㈣RF功率、2 托耳或更高的壓力、以及約30(rc至約48(rc的溫度產生 一電漿;以及 在該基材上形成一共形無定形碳層。 ❹2.如申明專利範圍第μ所述之方法更包含在形成該 無定形碳層之後執行一淨化處理步驟。 3.如申請專利範圍第2項所述之方法,更包含重複該無 形反形成製程步驟及該淨化處理步驟的循環約2至約 50 次。 、"J 申明專利範圍第1項所述之方法’更包含將-稀釋 34 201026877 氣體通入該處理室内,連同該氫氣前驅物、該電漿起始 氣體、或兩者。 5. 如申請專利範圍第1項所述之方法,其中上述之碳氫 化合物來源的碳對氫原子比為2 : 3或更高,並包含一或 多種選自由乙炔、乙烯乙炔、笨、笨乙烯、甲苯、二甲 苯、吡啶、苯乙酮、酚、呋喃、c3H2、C5H4、氟苯、二 氟苯、四氟笨、及六氟苯所組成的族群之化合物。 W 6. 如申請專利範圍第1項所述之方法,其中上述之碳氫 化合物氣體的體積流速對該電漿起始氣體的體積流速比 係從約1:1至約1 : 2。 7. 如申請專利範圍第1項所述之方法,其中上述之rf功 率係經施加約0·01至約5瓦/平方公分。 8·如申請專利範圍第1項所述之方法,其中上述之壓力 係從約2托耳至約20托耳。 9.如申請專利範圍第1項所述之方法,其中上述之Rf功 率係由一雙頻系統提供。 10_如申請專利範圍第1項所述之方法,其中上述之無定 形碳層擁有從約30%至約100%的共形性。 35 201026877 η·-種在-處理室内處理一基材的方法其至少包含: 執行一沈積循環,包含: 及 在1基材的—表面上形成一共形無定形碳材料 使一淨化氣體流動通過該處理室;以及 重複該循環2和50次之間。12:如申請專利範圍第u項所述之方法其中上述之淨 化氣體包含一惰性氣體或-碳氫化合物來源氣體。 13.如申請專利範圍第11項所述之方法,其中上述之淨 化氣體可被激發成一電聚。 14.如申請專利範圍第11項所述之方法其中上述之暫 • 停步驟時間對沈積步驟時間的比例可從約1〇〇 : !至約 1 : 100 ° 15. 如申請專利範圍第n項所述之方法,其中上述之每 一次沈積循環可沈積2%和50%之間的無定形碳層厚度。 16. 如申請專利範圍第u項所述之方法,其中上述之在 該基材的一表面上形成一共形無定形碳材料包含: 將碳對氫原子比為1:2或更高的碳氫化合物來源通 36 201026877 入該處理室; 將選自由氫氣、氦氣、氬氣、氮氣、及其組合物所組 成的族群之一電漿起始氣體通入該處理室,並且該碳氫 化合物來源的體積流速對該電漿起始氣體的體積流速比 為1 : 2或更大; 在該處理室内以5瓦/平方公分或更低的RF功率、2 托耳或更咼的壓力、以及約300°C至約48(TC的溫度產生 一電漿。 ❹ 17. 如申請專利範圍第16項所述之方法,更包含將一稀 釋氣體通入該處理室内,連同該氫氣前驅物、該電漿起 始氣體、或兩者。 18. 如申請專利範圍第16項所述之方法,其中上述之碳 氳化合物來源的碳對氫原子比為2:3或更高,並包含一 G 或多種選自由乙炔、乙烯乙炔、苯、苯乙烯、甲苯、二 甲苯、吡啶、苯乙酮、酚、呋喃、C3jj2、c5H4、氟苯、 二氟苯、四氟苯、及六氟苯所組成的族群之化合物。 19. 如申請專利範圍第16項所述之方法,其中上述之製 程包含一或多種選自由該碳氫化合物氣體的體積流速對 該電黎·起始氣體的體積流速比係從約1:1至約1:2、 施加從約0.01至约5瓦/平方公分的RF功率、該屋力 係從約2托耳至約20托耳、以及該溫度係從約3〇〇〇c至 37 201026877 約480°C所組成的族群之處理參數 疋形碳層的方法,其至少包 20.—種在一基材上形成 含: 將一基材設置在一基材處理室内; 將碳對氫原子比大於1:2沾 ^ . ^ 1 2的一碳虱化合物來源通入 該處理室;將選自由氫氣、氦氣、氬氣、氣氣、及其組合物所組 成的族群之一電漿起始氣體通入該處理室,並且該碳氫 化合物來源的體積流速對該電漿起始氣體的體積流速比 為1.2或更大,其中該碳氫化合物來源和該電漿起始氣 體係利用設置在距離基材表面4〇〇密爾和6〇〇密爾之間 的一氣體分配器通入該處理室; 在該處理室内以1瓦/平方公分或更低的RF功率以 及約〇°C至約1 〇〇〇C之間的溫度產生一電漿;以及 在該基材上形成一共形無定形碳層。 38
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- 2009-10-12 KR KR1020117010924A patent/KR101357181B1/ko active IP Right Grant
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TWI789069B (zh) * | 2020-10-22 | 2023-01-01 | 美商應用材料股份有限公司 | 由電極調整進行硬遮罩調諧 |
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CN102187432A (zh) | 2011-09-14 |
US8105465B2 (en) | 2012-01-31 |
JP2012506151A (ja) | 2012-03-08 |
WO2010045153A2 (en) | 2010-04-22 |
KR101357181B1 (ko) | 2014-01-29 |
WO2010045153A3 (en) | 2010-07-29 |
US20100093187A1 (en) | 2010-04-15 |
TWI421364B (zh) | 2014-01-01 |
CN102187432B (zh) | 2013-07-31 |
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