JP6561093B2 - シリコン酸化膜を除去する方法 - Google Patents
シリコン酸化膜を除去する方法 Download PDFInfo
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- JP6561093B2 JP6561093B2 JP2017142746A JP2017142746A JP6561093B2 JP 6561093 B2 JP6561093 B2 JP 6561093B2 JP 2017142746 A JP2017142746 A JP 2017142746A JP 2017142746 A JP2017142746 A JP 2017142746A JP 6561093 B2 JP6561093 B2 JP 6561093B2
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- silicon oxide
- oxide film
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1052—Formation of thin functional dielectric layers
- H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
- H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric
Description
・サイクルCYの実行回数:50回
・工程ST11:
CH3Fガスの流量:40sccm
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・工程ST13:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
高周波電源61の高周波:40MHz、150W
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・サイクルCYの実行回数:10回
・工程ST11:
C3H6ガスの流量:40sccm
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
・工程ST13:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
高周波電源61の高周波:40MHz、150W
処理時間:5秒
・工程ST12:
Arガスの流量:300sccm
静電チャック31の温度:60℃
チャンバの圧力:80mTorr(10.67Pa)
処理時間:2秒
<第2の評価実験における工程ST3の条件>
・工程ST31及び工程ST32を含むサイクルの実行回数:3回
・各サイクルにおける工程ST31の条件
HFガスの流量:150sccm
NH3ガスの流量:90sccm
Arガスの流量:225sccm
N2ガスの流量:225sccm
チャンバの圧力:450mTorr(60Pa)
ステージ164の温度:85℃
処理時間:6秒
・各サイクルにおける工程ST32の条件
工程ST32A:パージ工程
NH3ガスの流量:90sccm
Arガスの流量:225sccm
N2ガスの流量: 225sccm
ステージ164の温度:85℃
処理時間:5秒
工程ST32B:パージ工程
チャンバ:真空引き
ガスの通流: 無し
処理時間:30秒
Claims (9)
- 被加工物のシリコン酸化膜を除去する方法であって、該被加工物は、絶縁膜、及び、該絶縁膜に形成された開口の底部において露出された前記シリコン酸化膜を有し、
前記被加工物の表面上に炭素を含有する保護膜を形成する工程であり、前記保護膜は、前記開口を画成する前記絶縁膜の側壁面に沿って延在する第1領域、及び、前記シリコン酸化膜上で延在する第2領域を有する、該工程と、
不活性ガスのプラズマからのイオンによるスパッタエッチングにより前記保護膜の前記第2領域と前記シリコン酸化膜を除去する工程と、
化学的エッチングにより前記シリコン酸化膜の残渣を除去する工程と、
を含み、
保護膜を形成する前記工程は、前記被加工物がチャンバ内に配置された状態で実行され、
保護膜を形成する前記工程では、
前記チャンバに炭素含有ガスを供給することにより前記被加工物の表面上に炭素含有の前駆体層を形成する工程と、
前記チャンバをパージする工程と、
前記チャンバ内において不活性ガスのプラズマを生成することにより、前記前駆体層に含まれる不純物の量を低減させる工程と、
前記チャンバをパージする工程と、
を各々が含む複数回のサイクルが実行される、
方法。 - 前記炭素含有ガスは、ハイドロフルオロカーボンガスである、請求項1に記載の方法。
- 前記炭素含有ガスは、CH3Fガスである、請求項2に記載の方法。
- 前記炭素含有ガスは、炭化水素ガスである、請求項1に記載の方法。
- 前駆体層を形成する前記工程において、塩素ガス及び水素ガスのうち少なくとも一方が前記チャンバに更に供給される、請求項1〜4の何れか一項に記載の方法。
- 不純物の量を低減させる前記工程において用いられる前記不活性ガスは、希ガスである、請求項1〜5の何れか一項に記載の方法。
- 前記保護膜の前記第2領域及び前記シリコン酸化膜を除去する前記工程において用いられる前記不活性ガスは、希ガスである、請求項1〜6の何れか一項に記載の方法。
- 前記シリコン酸化膜の残渣を除去する前記工程は、
前記シリコン酸化膜の前記残渣に処理ガスを供給することにより、前記シリコン酸化膜の前記残渣から変質領域を形成する工程であり、該変質領域はケイフッ化アンモニウムを含む、該工程と、
前記変質領域を有する前記被加工物を加熱することにより、前記変質領域を除去する工程と、
を含む、請求項1〜7の何れか一項に記載の方法。 - 前記処理ガスは、HFガス及びNH3ガスを含む、請求項8に記載の方法。
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JP2017142746A JP6561093B2 (ja) | 2017-07-24 | 2017-07-24 | シリコン酸化膜を除去する方法 |
KR1020180080454A KR102149082B1 (ko) | 2017-07-24 | 2018-07-11 | 실리콘 산화막을 제거하는 방법 |
US16/038,863 US10546753B2 (en) | 2017-07-24 | 2018-07-18 | Method of removing silicon oxide film |
TW107125082A TW201921501A (zh) | 2017-07-24 | 2018-07-20 | 去除矽氧化膜之方法 |
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US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
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KR102149082B1 (ko) | 2020-08-27 |
TW201921501A (zh) | 2019-06-01 |
JP2019024043A (ja) | 2019-02-14 |
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