TW200807775A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
- Publication number
- TW200807775A TW200807775A TW095142141A TW95142141A TW200807775A TW 200807775 A TW200807775 A TW 200807775A TW 095142141 A TW095142141 A TW 095142141A TW 95142141 A TW95142141 A TW 95142141A TW 200807775 A TW200807775 A TW 200807775A
- Authority
- TW
- Taiwan
- Prior art keywords
- tmr
- insulating film
- film
- lower electrode
- interlayer insulating
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 104
- 239000011229 interlayer Substances 0.000 claims abstract description 172
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 61
- 238000009413 insulation Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 32
- 230000003647 oxidation Effects 0.000 claims description 31
- 238000007254 oxidation reaction Methods 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 17
- 238000004380 ashing Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 230000003064 anti-oxidating effect Effects 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000013626 chemical specie Substances 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
- 235000017491 Bambusa tulda Nutrition 0.000 claims 1
- 241001330002 Bambuseae Species 0.000 claims 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
- 239000011425 bamboo Substances 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 230000015541 sensory perception of touch Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010408 film Substances 0.000 description 442
- 230000005291 magnetic effect Effects 0.000 description 32
- 230000000694 effects Effects 0.000 description 24
- 150000004767 nitrides Chemical class 0.000 description 16
- 239000003795 chemical substances by application Substances 0.000 description 9
- 230000005294 ferromagnetic effect Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000002411 adverse Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical group [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 2
- YMRMGNMHZNFVAE-UHFFFAOYSA-N C(CCC)[Ru] Chemical compound C(CCC)[Ru] YMRMGNMHZNFVAE-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- -1 C〇FeB Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005328845 | 2005-11-14 | ||
| JP2006276259A JP5072012B2 (ja) | 2005-11-14 | 2006-10-10 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200807775A true TW200807775A (en) | 2008-02-01 |
Family
ID=38039873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095142141A TW200807775A (en) | 2005-11-14 | 2006-11-14 | Semiconductor device and method of manufacturing the same |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7605420B2 (OSRAM) |
| JP (1) | JP5072012B2 (OSRAM) |
| KR (1) | KR101266656B1 (OSRAM) |
| CN (2) | CN101162755B (OSRAM) |
| TW (1) | TW200807775A (OSRAM) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5072012B2 (ja) * | 2005-11-14 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2009194210A (ja) | 2008-02-15 | 2009-08-27 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
| JP5107128B2 (ja) * | 2008-04-23 | 2012-12-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2009295737A (ja) | 2008-06-04 | 2009-12-17 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
| JP2010016031A (ja) * | 2008-07-01 | 2010-01-21 | Renesas Technology Corp | 半導体記憶装置の製造方法 |
| JP5203844B2 (ja) | 2008-08-07 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US8455267B2 (en) * | 2009-05-14 | 2013-06-04 | Qualcomm Incorporated | Magnetic tunnel junction device and fabrication |
| JP2012069607A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
| CN103354952B (zh) | 2010-12-17 | 2016-09-28 | 艾沃思宾技术公司 | 具有改善的尺寸的磁随机存取存储器集成 |
| TWI445225B (zh) * | 2011-11-07 | 2014-07-11 | Voltafield Technology Corp | 磁阻元件結構形成方法 |
| US8790935B1 (en) * | 2012-10-22 | 2014-07-29 | Everspin Technologies, Inc. | Method of manufacturing a magnetoresistive-based device with via integration |
| GB2584021B (en) * | 2013-03-15 | 2021-02-24 | Intel Corp | Logic chip including embedded magnetic tunnel junctions |
| CN106030717B (zh) * | 2014-03-28 | 2019-10-01 | 英特尔公司 | 通过注入调制磁特性以及相关联的结构 |
| US9614143B2 (en) | 2015-06-09 | 2017-04-04 | Qualcomm Incorporated | De-integrated trench formation for advanced MRAM integration |
| US9666790B2 (en) | 2015-07-17 | 2017-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Manufacturing techniques and corresponding devices for magnetic tunnel junction devices |
| US10411068B2 (en) | 2015-11-23 | 2019-09-10 | Intel Corporation | Electrical contacts for magnetoresistive random access memory devices |
| US9771261B1 (en) * | 2016-03-17 | 2017-09-26 | Texas Instruments Incorporated | Selective patterning of an integrated fluxgate device |
| US12387772B2 (en) | 2020-08-10 | 2025-08-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and method for MRAM devices with a slot via |
| US12310246B2 (en) * | 2022-05-31 | 2025-05-20 | Allegro Microsystems, Llc | Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19701009A1 (de) * | 1997-01-14 | 1998-07-16 | Leonhard Feiler | Verfahren zur Herstellung von Perylen-3,4-dicarbonsäureanhydriden |
| US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| JP4309075B2 (ja) | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
| JP2003086773A (ja) | 2001-09-07 | 2003-03-20 | Canon Inc | 磁気メモリ装置およびその製造方法 |
| JP3843827B2 (ja) | 2001-12-07 | 2006-11-08 | ヤマハ株式会社 | 磁気トンネル接合素子とその製法 |
| JP3888168B2 (ja) | 2002-01-21 | 2007-02-28 | ヤマハ株式会社 | 磁気トンネル接合素子の製法 |
| JP2003243630A (ja) | 2002-02-18 | 2003-08-29 | Sony Corp | 磁気メモリ装置およびその製造方法 |
| US6627932B1 (en) * | 2002-04-11 | 2003-09-30 | Micron Technology, Inc. | Magnetoresistive memory device |
| JP2004055918A (ja) | 2002-07-22 | 2004-02-19 | Toshiba Corp | 磁気記憶装置及びその製造方法 |
| US20040032010A1 (en) * | 2002-08-14 | 2004-02-19 | Kools Jacques Constant Stefan | Amorphous soft magnetic shielding and keeper for MRAM devices |
| JP2004128229A (ja) * | 2002-10-02 | 2004-04-22 | Nec Corp | 磁性メモリ及びその製造方法 |
| JP2004193282A (ja) | 2002-12-10 | 2004-07-08 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| JP2004235443A (ja) * | 2003-01-30 | 2004-08-19 | Renesas Technology Corp | 薄膜磁性体記憶装置およびその製造方法 |
| JP4618989B2 (ja) * | 2003-02-18 | 2011-01-26 | 三菱電機株式会社 | 磁気記憶半導体装置 |
| JP4008857B2 (ja) * | 2003-03-24 | 2007-11-14 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| JP2004296859A (ja) | 2003-03-27 | 2004-10-21 | Renesas Technology Corp | 磁気記録素子及び磁気記録素子の製造方法 |
| JP3831353B2 (ja) | 2003-03-27 | 2006-10-11 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP4534441B2 (ja) * | 2003-07-25 | 2010-09-01 | Ｔｄｋ株式会社 | 磁気記憶セル及びこれを用いた磁気メモリデバイス |
| JP4074281B2 (ja) * | 2004-09-14 | 2008-04-09 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP2006261592A (ja) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | 磁気抵抗効果素子及びその製造方法 |
| US7122386B1 (en) * | 2005-09-21 | 2006-10-17 | Magic Technologies, Inc. | Method of fabricating contact pad for magnetic random access memory |
| JP5072012B2 (ja) * | 2005-11-14 | 2012-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
-
2006
- 2006-10-10 JP JP2006276259A patent/JP5072012B2/ja not_active Expired - Fee Related
- 2006-11-07 US US11/593,548 patent/US7605420B2/en not_active Expired - Fee Related
- 2006-11-13 KR KR1020060111748A patent/KR101266656B1/ko not_active Expired - Fee Related
- 2006-11-13 CN CN2006101470283A patent/CN101162755B/zh not_active Expired - Fee Related
- 2006-11-13 CN CN2011100485174A patent/CN102157680B/zh not_active Expired - Fee Related
- 2006-11-14 TW TW095142141A patent/TW200807775A/zh unknown
-
2009
- 2009-08-28 US US12/549,695 patent/US7973376B2/en not_active Expired - Fee Related
-
2011
- 2011-05-03 US US13/099,737 patent/US20110204458A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157680A (zh) | 2011-08-17 |
| KR101266656B1 (ko) | 2013-05-22 |
| US20090315128A1 (en) | 2009-12-24 |
| US20070108543A1 (en) | 2007-05-17 |
| JP5072012B2 (ja) | 2012-11-14 |
| US20110204458A1 (en) | 2011-08-25 |
| CN101162755B (zh) | 2011-04-13 |
| CN102157680B (zh) | 2013-03-20 |
| CN101162755A (zh) | 2008-04-16 |
| US7605420B2 (en) | 2009-10-20 |
| US7973376B2 (en) | 2011-07-05 |
| KR20070051708A (ko) | 2007-05-18 |
| JP2007158301A (ja) | 2007-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7973376B2 (en) | Semiconductor device and method of manufacturing the same | |
| JP5635666B2 (ja) | 半導体装置の製造方法 | |
| CN111969103B (zh) | 半导体元件及其制作方法 | |
| CN112447788B (zh) | 磁阻式随机存取存储器 | |
| CN111564468B (zh) | 半导体元件及其制作方法 | |
| US8383427B2 (en) | Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor | |
| CN112968036B (zh) | 半导体元件及其制作方法 | |
| KR101159240B1 (ko) | 반도체 소자 및 그 제조 방법 | |
| JP2011249590A (ja) | 磁気トンネル接合素子を用いた磁気ランダムアクセスメモリおよびその製造方法 | |
| TWI895626B (zh) | 半導體元件及其製作方法 | |
| TWI900789B (zh) | 半導體元件及其製作方法 | |
| TW202119665A (zh) | 半導體元件及其製作方法 | |
| CN103354952A (zh) | 具有改善的尺寸的磁随机存取存储器集成 | |
| JP2011238679A (ja) | 磁気記憶装置の製造方法及び磁気記憶装置 | |
| CN114447023A (zh) | 半导体元件及其制作方法 | |
| CN115915904A (zh) | 半导体元件及其制作方法 | |
| TW202118105A (zh) | 半導體裝置的形成方法 | |
| CN115440881A (zh) | 半导体元件及其制作方法 | |
| JP2012043854A (ja) | 磁気トンネル接合素子及びその製造方法 | |
| CN116156995A (zh) | 半导体结构及其制作方法 | |
| US20050275000A1 (en) | MRAM and method of manufacturing the same | |
| CN115377283A (zh) | 磁阻式随机存取存储器 | |
| US12484452B2 (en) | Method of fabricating magnetic tunneling junction device | |
| TW202543387A (zh) | 半導體元件及其製作方法 | |
| TW202443922A (zh) | 半導體元件及其製造方法 |