TW200704737A - Adhesive composition for semiconductor, semiconductor device using it, and process for semiconductor device - Google Patents

Adhesive composition for semiconductor, semiconductor device using it, and process for semiconductor device

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Publication number
TW200704737A
TW200704737A TW095119795A TW95119795A TW200704737A TW 200704737 A TW200704737 A TW 200704737A TW 095119795 A TW095119795 A TW 095119795A TW 95119795 A TW95119795 A TW 95119795A TW 200704737 A TW200704737 A TW 200704737A
Authority
TW
Taiwan
Prior art keywords
adhesive composition
semiconductor
weight part
semiconductor device
dissoluble
Prior art date
Application number
TW095119795A
Other languages
English (en)
Other versions
TWI393758B (zh
Inventor
Koichi Fujimaru
Toshihisa Nonaka
Original Assignee
Toray Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries filed Critical Toray Industries
Publication of TW200704737A publication Critical patent/TW200704737A/zh
Application granted granted Critical
Publication of TWI393758B publication Critical patent/TWI393758B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31515—As intermediate layer
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689540A (zh) * 2007-07-12 2010-03-31 Nxp股份有限公司 制造集成电路的方法
TWI504713B (zh) * 2009-10-19 2015-10-21 Toray Industries 感光性接著劑組成物、感光性接著劑片及使用其之半導體裝置

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5422878B2 (ja) * 2006-10-24 2014-02-19 東レ株式会社 半導体用接着組成物、それを用いた半導体装置および半導体装置の製造方法
JP5487619B2 (ja) * 2007-01-10 2014-05-07 日立化成株式会社 回路部材接続用接着剤及びこれを用いた半導体装置
KR20120089347A (ko) * 2007-07-11 2012-08-09 히다치 가세고교 가부시끼가이샤 회로 부재 접속용 접착제
DE602008003128D1 (de) 2007-07-12 2010-12-02 Nxp Bv Integrierte schaltungen auf einem wafer und verfahren zur herstellung integrierter schaltungen
CN102083886A (zh) * 2007-09-20 2011-06-01 日本化药株式会社 半导体装置用底漆树脂层及半导体装置
JP5292793B2 (ja) * 2007-12-14 2013-09-18 東レ株式会社 半導体用接着シート、それを用いた半導体装置および半導体装置の製造方法
JP4858431B2 (ja) * 2007-12-25 2012-01-18 パナソニック電工株式会社 半導体装置の製造方法
JP5002444B2 (ja) * 2007-12-25 2012-08-15 パナソニック株式会社 チップオンフィルム用液状エポキシ樹脂組成物、及び半導体装置
JP5130939B2 (ja) * 2008-02-13 2013-01-30 東レ株式会社 半導体用接着組成物およびそれを用いた半導体装置の製造方法
JP2009260218A (ja) * 2008-03-19 2009-11-05 Hitachi Chem Co Ltd 半導体ウエハのダイシング方法及び半導体チップと基板との接続方法
JP5436827B2 (ja) * 2008-03-21 2014-03-05 日立化成株式会社 半導体装置の製造方法
JP2009260225A (ja) * 2008-03-21 2009-11-05 Hitachi Chem Co Ltd 半導体装置の製造方法
JP2009260224A (ja) * 2008-03-21 2009-11-05 Hitachi Chem Co Ltd 半導体ウエハのダイシング方法及び半導体装置の製造方法
JP2009260219A (ja) * 2008-03-24 2009-11-05 Hitachi Chem Co Ltd 半導体ウェハのダイシング方法及び半導体装置の製造方法
JP5881927B2 (ja) * 2008-03-26 2016-03-09 日立化成株式会社 半導体封止用接着剤、半導体封止用フィルム状接着剤、半導体装置の製造方法、および半導体装置
JP5493311B2 (ja) * 2008-03-26 2014-05-14 日立化成株式会社 半導体ウエハのダイシング方法及びこれを用いた半導体装置の製造方法
JP5671778B2 (ja) * 2008-03-26 2015-02-18 日立化成株式会社 半導体封止用フィルム状接着剤、半導体装置及びその製造方法
JP5748937B2 (ja) * 2008-04-01 2015-07-15 日立化成株式会社 半導体封止用フィルム状接着剤及び半導体装置の製造方法
US7773220B2 (en) * 2008-04-02 2010-08-10 International Business Machines Corporation Method and system for collecting alignment data from coated chips or wafers
JP5141366B2 (ja) * 2008-05-14 2013-02-13 東レ株式会社 半導体用接着フィルムおよびこれを用いた半導体装置の製造方法
JP2010132793A (ja) * 2008-12-05 2010-06-17 Toray Ind Inc 熱硬化性樹脂組成物、それを用いたアンダーフィル剤および半導体装置
US20120032284A1 (en) * 2009-03-31 2012-02-09 Hirohisa Dejima Film for resin spacer, light-receiving device and method for manufacturing same, and mems device and method for manufacturing same
WO2011004706A1 (ja) * 2009-07-10 2011-01-13 東レ株式会社 接着組成物、接着シート、それらを用いた回路基板および半導体装置ならびにそれらの製造方法
JP5609357B2 (ja) * 2009-07-30 2014-10-22 東レ株式会社 組成物およびそれからなる組成物シート
US8674502B2 (en) 2010-07-16 2014-03-18 Hitachi Chemical Company, Ltd. Semiconductor-encapsulating adhesive, semiconductor-encapsulating film-form adhesive, method for producing semiconductor device, and semiconductor device
JP5780917B2 (ja) * 2011-10-25 2015-09-16 キヤノン株式会社 インクジェット記録ヘッド用配線保護封止剤、並びに、それを用いたインクジェット記録ヘッド及びその製造方法
SG11201505053XA (en) * 2012-12-27 2015-07-30 Toray Industries Adhesive agent, adhesive film, and semiconductor device and method for manufacturing same
US10002813B2 (en) * 2013-01-22 2018-06-19 Toray Industries, Inc. Adhesive composition and adhesive sheet, and hardened article and semiconductor device using same
CN105745274B (zh) * 2013-11-27 2018-06-29 东丽株式会社 半导体用树脂组合物及半导体用树脂膜以及使用了它们的半导体器件
JP6504050B2 (ja) * 2014-01-15 2019-04-24 東レ株式会社 接着組成物ならびにそれを有する接着フィルム、接着組成物付き基板、半導体装置およびその製造方法
US9416229B2 (en) 2014-05-28 2016-08-16 Industrial Technology Research Institute Dianhydride and polyimide
US10170444B2 (en) * 2015-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Packages for semiconductor devices, packaged semiconductor devices, and methods of packaging semiconductor devices
US9953963B2 (en) * 2015-11-06 2018-04-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit process having alignment marks for underfill
TWI675899B (zh) 2018-04-25 2019-11-01 達興材料股份有限公司 暫時黏著被加工物之方法及黏著劑
CN109694574A (zh) * 2018-12-17 2019-04-30 无锡创彩光学材料有限公司 一种高粘接性聚酰亚胺薄膜、其制备方法及柔性覆铜板
KR20210072392A (ko) 2019-12-09 2021-06-17 쓰리엠 이노베이티브 프로퍼티즈 컴파니 접착 필름

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11220051A (ja) 1998-01-30 1999-08-10 Toray Ind Inc 半導体装置用接着剤シート、半導体集積回路接続用基板の部品およびこれを用いた半導体装置
JP2001237268A (ja) * 2000-02-22 2001-08-31 Nec Corp 半導体素子の実装方法及び製造装置
US6645632B2 (en) * 2000-03-15 2003-11-11 Shin-Etsu Chemical Co., Ltd. Film-type adhesive for electronic components, and electronic components bonded therewith
US7115681B2 (en) * 2001-07-09 2006-10-03 Kaneka Corporation Resin composition
JP2003192894A (ja) 2001-12-28 2003-07-09 Sumitomo Bakelite Co Ltd ポリイミド樹脂組成物溶液およびフィルム状接着剤
JP2004292821A (ja) * 2002-06-26 2004-10-21 Hitachi Chem Co Ltd フィルム状接着剤、接着シート及び半導体装置
JP2004137411A (ja) 2002-10-18 2004-05-13 Sumitomo Bakelite Co Ltd 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法
JP2004146495A (ja) 2002-10-23 2004-05-20 Toppan Printing Co Ltd プリント配線板内蔵用チップコンデンサ及びそれを内蔵した素子内蔵基板
JP4219660B2 (ja) * 2002-11-18 2009-02-04 信越化学工業株式会社 ウエハダイシング・ダイボンドシート
US20040132888A1 (en) * 2002-12-16 2004-07-08 Ube Industries, Ltd. Electronic device packaging and curable resin composition
JP4449325B2 (ja) 2003-04-17 2010-04-14 住友ベークライト株式会社 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法。
JP2004319823A (ja) 2003-04-17 2004-11-11 Sumitomo Bakelite Co Ltd 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法。
JP4171898B2 (ja) * 2003-04-25 2008-10-29 信越化学工業株式会社 ダイシング・ダイボンド用接着テープ
EP1630605B1 (en) 2003-06-02 2017-10-11 Toray Industries, Inc. Photosensitive resin composition
JP4235808B2 (ja) * 2003-09-19 2009-03-11 信越化学工業株式会社 接着剤組成物及び接着フィルム
JP4536367B2 (ja) 2003-12-24 2010-09-01 東レ・ダウコーニング株式会社 ダイシングダイボンディング用シート及びその製造方法
JP2005332901A (ja) 2004-05-19 2005-12-02 Mitsui Chemicals Inc 半導体ウエハの保護方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689540A (zh) * 2007-07-12 2010-03-31 Nxp股份有限公司 制造集成电路的方法
US8349708B2 (en) 2007-07-12 2013-01-08 Nxp B.V. Integrated circuits on a wafer and methods for manufacturing integrated circuits
CN101689540B (zh) * 2007-07-12 2014-06-25 Nxp股份有限公司 制造集成电路的方法
TWI504713B (zh) * 2009-10-19 2015-10-21 Toray Industries 感光性接著劑組成物、感光性接著劑片及使用其之半導體裝置

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US20090123747A1 (en) 2009-05-14
JP2007211246A (ja) 2007-08-23
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KR101294647B1 (ko) 2013-08-09
US8653202B2 (en) 2014-02-18

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