JP4536367B2 - ダイシングダイボンディング用シート及びその製造方法 - Google Patents
ダイシングダイボンディング用シート及びその製造方法 Download PDFInfo
- Publication number
- JP4536367B2 JP4536367B2 JP2003426021A JP2003426021A JP4536367B2 JP 4536367 B2 JP4536367 B2 JP 4536367B2 JP 2003426021 A JP2003426021 A JP 2003426021A JP 2003426021 A JP2003426021 A JP 2003426021A JP 4536367 B2 JP4536367 B2 JP 4536367B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- layer
- film
- silicone
- base film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29191—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1471—Protective layer
Description
シリコーン系接着剤層の両面にフィルムA及びフィルムBが密着している3層構造からなるダイアタッチフィルム(東レ・ダウコーニング・シリコーン株式会社製のFA60K2)を、片方のフィルムB側から他方のフィルムAに達する深さで直径150mmの円形に切断し、直径150mmの円形にカットされた部分を残して、それ以外の部分をハーフカットされたフィルムAより取り除いた。
シリコーン系接着剤層の両面にフィルムA及びフィルムBが密着している3層構造からなるダイアタッチフィルム(東レ・ダウコーニング・シリコーン株式会社製のFA60K2)を、片方のフィルムB側から他方のフィルムAに達する深さで直径150mmの円形に切断し、直径150mmの円形にカットされた部分を残して、それ以外の部分をハーフカットされたフィルムAより取り除いた。
シリコーン系接着剤層の両面にフィルムA及びフィルムBが密着している3層構造からなるダイアタッチフィルム(東レ・ダウコーニング・シリコーン株式会社製のFA3010−25T)を、片方のフィルムB側から他方のフィルムAに達する深さで直径150mmの円形に切断し、直径150mmの円形にカットされた部分を残して、それ以外の部分をハーフカットされたフィルムAより取り除いた。
シリコーン系接着剤層の両面にフィルムA及びフィルムBが密着している3層構造からなるダイアタッチフィルム(東レ・ダウコーニング・シリコーン株式会社製のFA3010−25T)を、片方のフィルムB側から他方のフィルムAに達する深さで直径150mmの円形に切断し、直径150mmの円形にカットされた部分を残して、それ以外の部分をハーフカットされたフィルムAより取り除いた。
シリコーン系接着剤層の両面にフィルムA及びフィルムBが密着している3層構造からなるダイアタッチフィルム(東レ・ダウコーニング・シリコーン株式会社製のFA3010−25T)を、片方のフィルムB側から他方のフィルムAに達する深さで直径150mmの円形に切断し、直径150mmの円形にカットされた部分を残して、それ以外の部分をハーフカットされたフィルムAより取り除いた。
Claims (8)
- 半導体ウェハのダイシング前に当該半導体ウェハに接着されるダイシングダイボンディング用シートであって、
アクリル系粘着剤層を表面に備えるベースフィルムと、
前記ベースフィルム上に形成された下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)と、
前記下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)上に形成された、前記半導体ウェハに接着される接着面を有するシリコーン系接着剤層と
を備えており、
前記半導体ウェハに接着後に、前記下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)から前記シリコーン系接着剤層が剥離可能なダイシングダイボンディング用シート。 - 前記下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)が少なくとも2層からなる積層体である、請求項1記載のダイシングダイボンディング用シート。
- 前記ベースフィルムが前記半導体ウェハ以上の表面積を有する、請求項1又は2記載のダイシングダイボンディング用シート。
- 剥離可能な保護層で被覆されている、請求項1乃至3のいずれかに記載のダイシングダイボンディング用シート。
- 前記ベースフィルム上に下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)及びシリコーン系接着剤層を形成する工程を含む、請求項1記載のダイシングダイボンディング用シートの製造方法。
- 剥離層上にシリコーン系接着剤層及び下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)を形成する工程と、
前記下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)表面にアクリル系粘着剤層を表面に備えるベースフィルムを積層する工程と、
前記剥離層を剥離する工程と
を含む、請求項1記載のダイシングダイボンディング用シートの製造方法。 - 前記剥離層を剥離する工程後に、剥離可能な保護層を前記シリコーン系接着剤層上に形成する工程を更に含む、請求項6記載の製造方法。
- 剥離可能な保護層上にシリコーン系接着剤層及び下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)を形成する工程と、
前記下地層(加熱発泡粘着層及び放射線硬化型粘着剤層を除く)表面にアクリル系粘着剤層を表面に備えるベースフィルムを積層する工程と
を含む、請求項4記載のダイシングダイボンディング用シートの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003426021A JP4536367B2 (ja) | 2003-12-24 | 2003-12-24 | ダイシングダイボンディング用シート及びその製造方法 |
EP04801677A EP1704591A1 (en) | 2003-12-24 | 2004-12-07 | Dicing/die bonding film and method of manufacturing the same |
KR1020067012716A KR101187591B1 (ko) | 2003-12-24 | 2004-12-07 | 다이싱/다이 본딩 필름 및 이의 제조방법 |
CNA2004800387485A CN1898790A (zh) | 2003-12-24 | 2004-12-07 | 切割/模片粘结膜及其制造方法 |
PCT/JP2004/018531 WO2005062374A1 (en) | 2003-12-24 | 2004-12-07 | Dicing/die bonding film and method of manufacturing the same |
US10/584,475 US20070166500A1 (en) | 2003-12-24 | 2004-12-07 | Dicing/die bonding film and method of manufacturing the same |
TW093138648A TWI458001B (zh) | 2003-12-24 | 2004-12-13 | 切晶片/晶粒接合片及其製備方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003426021A JP4536367B2 (ja) | 2003-12-24 | 2003-12-24 | ダイシングダイボンディング用シート及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005183855A JP2005183855A (ja) | 2005-07-07 |
JP4536367B2 true JP4536367B2 (ja) | 2010-09-01 |
Family
ID=34708839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003426021A Expired - Fee Related JP4536367B2 (ja) | 2003-12-24 | 2003-12-24 | ダイシングダイボンディング用シート及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070166500A1 (ja) |
EP (1) | EP1704591A1 (ja) |
JP (1) | JP4536367B2 (ja) |
KR (1) | KR101187591B1 (ja) |
CN (1) | CN1898790A (ja) |
TW (1) | TWI458001B (ja) |
WO (1) | WO2005062374A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019124417A1 (ja) | 2017-12-20 | 2019-06-27 | ダウ・東レ株式会社 | シリコーン系接着シート、それを含む積層体、半導体装置の製造方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080042940A (ko) * | 2004-05-18 | 2008-05-15 | 히다치 가세고교 가부시끼가이샤 | 점접착 시트 및 그것을 이용한 반도체장치 및 그 제조 방법 |
KR101294647B1 (ko) | 2005-06-06 | 2013-08-09 | 도레이 카부시키가이샤 | 반도체용 접착 조성물, 그것을 사용한 반도체 장치 및반도체 장치의 제조 방법 |
KR100867183B1 (ko) * | 2006-12-05 | 2008-11-06 | 주식회사 엘지화학 | 다이싱·다이 본딩용 접착 필름, 이를 사용한 반도체 장치및 그의 제조 방법 |
KR101191121B1 (ko) * | 2007-12-03 | 2012-10-15 | 주식회사 엘지화학 | 다이싱 다이본딩 필름 및 다이싱 방법 |
JP2011049337A (ja) * | 2009-08-27 | 2011-03-10 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法 |
JP5174092B2 (ja) * | 2009-08-31 | 2013-04-03 | 日東電工株式会社 | ダイシングシート付き接着フィルム及びその製造方法 |
KR101083959B1 (ko) * | 2010-02-01 | 2011-11-16 | 닛토덴코 가부시키가이샤 | 반도체 장치 제조용 필름 및 반도체 장치의 제조 방법 |
JP5385988B2 (ja) * | 2010-08-23 | 2014-01-08 | 積水化学工業株式会社 | 接着シート及び半導体チップの実装方法 |
CN102184872A (zh) * | 2011-04-08 | 2011-09-14 | 嘉盛半导体(苏州)有限公司 | 半导体封装的粘片工艺 |
JPWO2015178369A1 (ja) * | 2014-05-23 | 2017-04-20 | 日立化成株式会社 | ダイボンドダイシングシート |
CN107078075A (zh) * | 2014-11-05 | 2017-08-18 | Ev 集团 E·索尔纳有限责任公司 | 用于对产品衬底进行涂层的方法和装置 |
US20160317068A1 (en) * | 2015-04-30 | 2016-11-03 | Verily Life Sciences Llc | Electronic devices with encapsulating silicone based adhesive |
CN107516651B (zh) * | 2016-06-16 | 2023-08-08 | 宁波舜宇光电信息有限公司 | 感光组件和摄像模组及其制造方法 |
KR20230125247A (ko) | 2020-12-25 | 2023-08-29 | 다우 도레이 캄파니 리미티드 | 일체형 다이싱 다이 본딩용 시트 및 반도체 장치의 제조 방법 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057642A (ja) * | 1983-08-03 | 1985-04-03 | ナショナル スタ−チ アンド ケミカル コ−ポレイション | ダイシングフイルムおよび方法 |
JPS6181650A (ja) * | 1984-09-28 | 1986-04-25 | Shin Etsu Polymer Co Ltd | ダイシングフイルム |
JPH03152942A (ja) * | 1989-11-09 | 1991-06-28 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JPH03268345A (ja) * | 1990-03-16 | 1991-11-29 | Nitto Denko Corp | ダイ接着用シート及び半導体チップ固着キャリアの製造方法 |
JPH0745557A (ja) * | 1993-07-27 | 1995-02-14 | Lintec Corp | ウェハ貼着用粘着シート |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JPH10214800A (ja) * | 1997-01-29 | 1998-08-11 | Mitsui Chem Inc | 半導体ウエハのダイシング方法及び該方法に用いる粘着フィルム |
JPH1112546A (ja) * | 1997-04-30 | 1999-01-19 | Toray Dow Corning Silicone Co Ltd | シリコーン系接着性シート、その製造方法、および半導体装置 |
JP2002226796A (ja) * | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
JP2004043814A (ja) * | 2002-07-15 | 2004-02-12 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05179211A (ja) * | 1991-12-30 | 1993-07-20 | Nitto Denko Corp | ダイシング・ダイボンドフイルム |
EP0571649A1 (en) * | 1992-05-26 | 1993-12-01 | Nitto Denko Corporation | Dicing-die bonding film and use thereof in a process for producing chips |
US6319754B1 (en) * | 2000-07-10 | 2001-11-20 | Advanced Semiconductor Engineering, Inc. | Wafer-dicing process |
JP3901615B2 (ja) * | 2002-08-21 | 2007-04-04 | 信越化学工業株式会社 | シリコーン接着剤及び接着フイルム |
US8241060B2 (en) * | 2010-01-05 | 2012-08-14 | Tyco Electronics Corporation | Snap-on coaxial cable connector |
-
2003
- 2003-12-24 JP JP2003426021A patent/JP4536367B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-07 US US10/584,475 patent/US20070166500A1/en not_active Abandoned
- 2004-12-07 KR KR1020067012716A patent/KR101187591B1/ko not_active IP Right Cessation
- 2004-12-07 WO PCT/JP2004/018531 patent/WO2005062374A1/en active Application Filing
- 2004-12-07 EP EP04801677A patent/EP1704591A1/en not_active Withdrawn
- 2004-12-07 CN CNA2004800387485A patent/CN1898790A/zh active Pending
- 2004-12-13 TW TW093138648A patent/TWI458001B/zh not_active IP Right Cessation
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057642A (ja) * | 1983-08-03 | 1985-04-03 | ナショナル スタ−チ アンド ケミカル コ−ポレイション | ダイシングフイルムおよび方法 |
JPS6181650A (ja) * | 1984-09-28 | 1986-04-25 | Shin Etsu Polymer Co Ltd | ダイシングフイルム |
JPH03152942A (ja) * | 1989-11-09 | 1991-06-28 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JPH03268345A (ja) * | 1990-03-16 | 1991-11-29 | Nitto Denko Corp | ダイ接着用シート及び半導体チップ固着キャリアの製造方法 |
JPH0745557A (ja) * | 1993-07-27 | 1995-02-14 | Lintec Corp | ウェハ貼着用粘着シート |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JPH10214800A (ja) * | 1997-01-29 | 1998-08-11 | Mitsui Chem Inc | 半導体ウエハのダイシング方法及び該方法に用いる粘着フィルム |
JPH1112546A (ja) * | 1997-04-30 | 1999-01-19 | Toray Dow Corning Silicone Co Ltd | シリコーン系接着性シート、その製造方法、および半導体装置 |
JP2002226796A (ja) * | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
JP2004043814A (ja) * | 2002-07-15 | 2004-02-12 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019124417A1 (ja) | 2017-12-20 | 2019-06-27 | ダウ・東レ株式会社 | シリコーン系接着シート、それを含む積層体、半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1704591A1 (en) | 2006-09-27 |
KR20060126517A (ko) | 2006-12-07 |
TW200525619A (en) | 2005-08-01 |
KR101187591B1 (ko) | 2012-10-11 |
CN1898790A (zh) | 2007-01-17 |
TWI458001B (zh) | 2014-10-21 |
WO2005062374B1 (en) | 2005-09-15 |
WO2005062374A1 (en) | 2005-07-07 |
US20070166500A1 (en) | 2007-07-19 |
JP2005183855A (ja) | 2005-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4536367B2 (ja) | ダイシングダイボンディング用シート及びその製造方法 | |
JP3521099B2 (ja) | ダイシング用リングフレームへの接着剤の付着防止用粘着シートおよび該粘着シートを備えたウェハ加工用シート | |
JP5196838B2 (ja) | 接着剤付きチップの製造方法 | |
JP4447280B2 (ja) | 表面保護用シートおよび半導体ウエハの研削方法 | |
JP2006203133A (ja) | チップ体の製造方法、デバイスの製造方法およびチップ体固着用粘接着シート | |
KR20040030897A (ko) | 가열 박리형 점착 시이트로부터의 칩 절단편의 가열 박리방법, 전자 부품 및 회로 기판 | |
JP4879702B2 (ja) | ダイソート用シートおよび接着剤層を有するチップの移送方法 | |
TW200415754A (en) | Fabrication method of semiconductor integrated circuit device | |
JPH05179211A (ja) | ダイシング・ダイボンドフイルム | |
KR102535477B1 (ko) | 다이본드 다이싱 시트 | |
JP4505798B2 (ja) | 粘接着シート | |
JP2008066336A (ja) | ウエハ加工用シート | |
JP2009130332A (ja) | 半導体装置の製造方法 | |
JP5323331B2 (ja) | ウェハ加工用シート | |
JP5666659B2 (ja) | ウェハ加工用シート | |
JP5683794B2 (ja) | ウェハ加工用テープ | |
JP2005056968A (ja) | 半導体装置の製造方法 | |
JP2010278198A (ja) | ウェハ加工用シート | |
JP5646395B2 (ja) | ウェーハ保持ジグ | |
JP2012209385A (ja) | ピックアップテープおよびチップ状部品の製造方法 | |
JP2009130333A (ja) | 半導体装置の製造方法 | |
JP2003324080A (ja) | 半導体装置の製造方法 | |
JP2017139409A (ja) | ダイボンドダイシングシート | |
JP2012182313A (ja) | チップ状部品のピックアップ方法 | |
JP2003324112A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061019 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100212 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100428 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100601 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100616 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130625 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |