TW200629467A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

Info

Publication number
TW200629467A
TW200629467A TW094116606A TW94116606A TW200629467A TW 200629467 A TW200629467 A TW 200629467A TW 094116606 A TW094116606 A TW 094116606A TW 94116606 A TW94116606 A TW 94116606A TW 200629467 A TW200629467 A TW 200629467A
Authority
TW
Taiwan
Prior art keywords
manufacturing
low
dielectric
cxhy
plasma processing
Prior art date
Application number
TW094116606A
Other languages
English (en)
Other versions
TWI250608B (en
Inventor
Keng-Chu Lin
Shwang-Ming Cheng
Ming-Ling Yeh
Tien-I Bao
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Application granted granted Critical
Publication of TWI250608B publication Critical patent/TWI250608B/zh
Publication of TW200629467A publication Critical patent/TW200629467A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
TW094116606A 2005-02-01 2005-05-20 Semiconductor device and method for manufacturing the same TWI250608B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/048,518 US7135402B2 (en) 2005-02-01 2005-02-01 Sealing pores of low-k dielectrics using CxHy

Publications (2)

Publication Number Publication Date
TWI250608B TWI250608B (en) 2006-03-01
TW200629467A true TW200629467A (en) 2006-08-16

Family

ID=36757146

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116606A TWI250608B (en) 2005-02-01 2005-05-20 Semiconductor device and method for manufacturing the same

Country Status (3)

Country Link
US (1) US7135402B2 (zh)
CN (1) CN100403514C (zh)
TW (1) TWI250608B (zh)

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TWI560772B (en) * 2011-06-01 2016-12-01 Applied Materials Inc Methods for repairing low-k dielectrics using carbon plasma immersion

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