TWI397126B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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- TWI397126B TWI397126B TW098135952A TW98135952A TWI397126B TW I397126 B TWI397126 B TW I397126B TW 098135952 A TW098135952 A TW 098135952A TW 98135952 A TW98135952 A TW 98135952A TW I397126 B TWI397126 B TW I397126B
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 115
- 239000002184 metal Substances 0.000 claims description 115
- 239000010410 layer Substances 0.000 claims description 110
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 108
- 229910052799 carbon Inorganic materials 0.000 claims description 108
- 150000001875 compounds Chemical class 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- -1 cyclic siloxane Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 150000003333 secondary alcohols Chemical class 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 19
- 229920006254 polymer film Polymers 0.000 description 19
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
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- 238000009713 electroplating Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- YTPFRRRNIYVFFE-UHFFFAOYSA-N 2,2,3,3,5,5-hexamethyl-1,4-dioxane Chemical compound CC1(C)COC(C)(C)C(C)(C)O1 YTPFRRRNIYVFFE-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
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- 238000005477 sputtering target Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- ZWXQPERWRDHCMZ-UHFFFAOYSA-N 2-methyl-n-propan-2-ylpropan-2-amine Chemical compound CC(C)NC(C)(C)C ZWXQPERWRDHCMZ-UHFFFAOYSA-N 0.000 description 1
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- 229910020890 PHI 650 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 102100033632 Tropomyosin alpha-1 chain Human genes 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- PXRMLPZQBFWPCV-UHFFFAOYSA-N dioxasilirane Chemical compound O1O[SiH2]1 PXRMLPZQBFWPCV-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Description
本發明係關於包含多孔質絕緣層的半導體裝置及其製造方法。
專利文獻1中記載如下方法:以烴類氣體電漿處理,藉由在多孔質絕緣膜表面設置聚合物膜以使阻障膜更加被覆完全。
專利文獻1所記載的方法中,首先如圖5(a)所示,於半導體基板上在包含配線102的底層膜101上形成蝕刻停止.抗擴散膜103。蝕刻停止.抗擴散膜103通常為氮化矽膜(Si3
N4
)或碳化矽膜(SiC)。然後,形成具低介電常數的多孔質絕緣層104。其後,使用光阻遮罩而以蝕刻形成通孔107及溝槽108。利用灰化去除遮罩後,通孔係貫通多孔質絕緣層104、蝕刻停止.抗擴散膜103到達配線102,而溝槽形成多孔質絕緣層104之膜厚約1/2深度的剖面形狀(圖5(b))。
然後,進行烴類氣體電漿處理。在層間絕緣膜表面及露出通孔107之底部的配線之表面設置薄的聚合物膜109c(圖5(c))。聚合物膜109c使用C2
H4
氣體而以6~70mTorr的壓力、500~1700W的功率形成。
以PVD(物理氣相沉積)法形成Cu阻隔性的TaN膜110,及電鍍Cu時的供電Cu膜後,以電鍍法在通孔107、溝槽108埋設Cu膜111(圖6(a))。然後,以(CMP)化學機械研磨依序去除多孔質絕緣層表面的Cu膜111、TaN膜110、聚合物膜109c,形成配線(圖6(b))。
又,專利文獻2中記載以下之方法:
首先如圖7(a)所示,於半導體基板上在包含配線102的底層膜101上形成蝕刻停止.抗擴散膜103。然後,在具有低介電常數的多孔質絕緣層104,以既定的方法形成通孔107及溝槽108(圖7(b))。
然後,以CVD(化學氣相沉積)法或塗佈法,在通孔107、溝槽108之側壁及基板最表面設置聚合物膜109c。接著,以非等向性電漿蝕刻,使聚合物膜109c留在通孔107、溝槽108之側面(圖7(c))。
以PVD法形成Cu阻隔性的TaN膜110,及電鍍Cu時的供電Cu膜後,以電鍍法在通孔107、溝槽108埋設Cu膜111(圖8(a))。然後,以CMP依序去除多孔質絕緣層表面的Cu膜111、TaN膜110、聚合物膜109c,形成配線(圖8(b))。
【專利文獻1】 美國專利公報第7067925號
【專利文獻2】 美國專利公報第7057287號
然而,上述文獻記載的技術在以下各點仍有改善的餘地。
專利文獻1所記載的方法中,由於通孔底之配線表面形成有聚合物膜109c,因此有下層配線102與通孔配線(Cu膜111)間之接觸電阻變高的情形。尤其近年來,為實現LSI(大型積體電路)的性能提高,不斷進行配線間距之縮小化及多層配線層數之增大。由於通孔電阻與通孔底之面積成比例,因此有通孔電阻比起配線間距之縮小率更增大化的傾向。又,配線層數越增加,通孔電阻於配線電阻中所佔比例變越大。
亦即,專利文獻1所記載的半導體裝置中,有配線間之電阻增大,且連接可靠度降低的情形。因此,有造成半導體裝置之品質下降或產量下降的情形。
專利文獻2所記載的半導體裝置中,於通孔、溝槽內存在不具有聚合物膜之處。因此,即使具有金屬阻障膜,也無法充分地抑制Cu擴散至多孔質膜,而有時發生電遷移或應力遷移等,有連接可靠度降低的情形。
又,專利文獻2所記載的方法中,為使薄的聚合物膜109c僅留在通孔107、溝槽108之側壁所進行的非等向性蝕刻,受蝕刻氣體迴繞的影響,而越靠近基板最表面之處的膜,其蝕刻速度越大。因此,於完全去除到達通孔底的聚合物膜109c之間,到達溝槽底108a的聚合物膜109c或基板最上層的聚合物膜109c先被去除,連其下層的膜都被過度去除。由於多孔質絕緣層104比起聚合物膜109c密度較小,因此蝕刻速度大,而難以選擇性地僅蝕刻到達溝槽底108a之薄的聚合物膜109c。其結果,由於變得難以均一地保持溝槽深度,因此依製造批次而配線性能無法穩定,有產量下降的情形。
又,不僅難以得到最適合於聚合物膜109c與多孔質絕緣層104二者的蝕刻結果,而且當以聚合物膜109c之蝕刻條件蝕刻多孔質絕緣層104時,多孔質絕緣層104的表面變粗造。因此,由於已去除薄的聚合物膜109c後的過度蝕刻,露出溝槽底108a之多孔質絕緣層104的表面變粗造。因此,有上下配線間之絕緣性降低,且連接可靠度降低的情形。
如上述,專利文獻2所記載的方法中,所得到之半導體裝置的連接可靠度降低。因此,有造成半導體裝置之品質下降或產量下降的情形。
依本發明,提供半導體裝置,包含:第1配線;多孔質絕緣層,形成於該第1配線上;第2配線,埋設於該多孔質絕緣層中,且與第1配線電連接;及含碳金屬膜,僅設於該多孔質絕緣層與該第2配線之間,用以隔離該等層。
依本發明,由於包含隔離多孔質絕緣層與第2配線的含碳金屬膜,故抑制金屬的擴散。因此,由於抑制電遷移或應力遷移等的產生,連接可靠度提高,故可提供具有動作保證壽命長之高品質配線的半導體裝置。
而且,由於第1配線與第2配線之間未包含絕緣性的膜,因此第1配線與電連接之第2配線間的接觸電阻變小,形成配線電阻小的高性能配線。因此,半導體裝置的品質提高,產量也提高。
依本發明,提供半導體裝置之製造方法,包含:在第1配線上形成多孔質絕緣層的步驟;在該多孔質絕緣層形成配線溝槽的步驟;使反應性之含碳化合物浸漬在該多孔質絕緣層的步驟;在位於該配線溝槽之側面的該多孔質絕緣層表面,及露出該配線溝槽之底面的該第1配線之表面沉積金屬膜,並藉由將該反應性之含碳化合物所含的碳導入至該金屬膜,以在該多孔質絕緣層表面形成含碳金屬膜的步驟;及在形成有該含碳金屬膜之該配線溝槽形成第2配線的步驟。
依本發明,於多孔質絕緣層表面,藉由將反應性之含碳化合物所含的碳導入至金屬膜,可選擇性地在多孔質絕緣層表面形成含碳金屬膜,而且第1配線表面未形成絕緣膜。如上述,可利用簡單的方法,以含有高阻隔性之碳的金屬膜而有效率地僅覆蓋配線溝槽內的多孔質絕緣層表面,可得到連接可靠度及品質良好,且產品之產量提高的半導體裝置。
本發明之半導體裝置由於配線間之連接可靠度良好,因此品質良好,且產量提高。而且,依本發明之半導體裝置之製造方法,可利用簡單的方法而有效率地得到此種半導體裝置。
以下使用圖式,說明本發明之實施形態。又所有的圖式中,相同的構成要素標註相同的符號,並適當省略其說明。
本實施形態之半導體裝置如圖2(b)所示,包含:第1配線2;多孔質絕緣層4,形成於第1配線2上;第2配線11,埋設於多孔質絕緣層4中,且與第1配線2電連接;及含碳金屬膜9a,設於多孔質絕緣層4與第2配線11之間,用以隔離該等層。第1配線2與第2配線11之間包含金屬膜9b。在包含第1配線2的底層膜1上,與多孔質絕緣層4之間包含蝕刻停止‧抗擴散膜3。
第1配線2及第2配線11以低電阻的配線材料形成,該材料由例如Cu或Al或者以其等為主成分的合金所構成。蝕刻停止‧抗擴散膜3並無特定,為氮化矽膜(Si3
N4
)或碳化矽膜(SiC)或氮碳化矽膜(SiCN)等,也可使用其等之積層膜。
多孔質絕緣層4由SiOC或SiO2
等構成,係具有2.5以下之低介電常數的多孔質絕緣膜。
含碳金屬膜9a由TiC、TaC、WC或AlC3
等構成。含碳金屬膜9a之膜厚為3nm以上、50nm以下。本實施形態中,以使用膜厚25nm左右之含碳金屬膜9a的例子,進行說明。又,含碳金屬膜9a亦可不含氧原子。
金屬膜9b由鈦(Ti)、鎢(W)、鋁(Al)、鉭(Ta)等形成。
接著,說明本實施形態之半導體裝置之製造方法。
本實施形態之半導體裝置之製造方法包含下列步驟:
(a)在第1配線2上形成多孔質絕緣層4的步驟(圖1(a)~(b))
(b)在多孔質絕緣層4形成配線溝槽(通孔7、溝槽8)的步驟(圖1(b))
(c)使反應性之含碳化合物浸漬在多孔質絕緣層4的步驟
(d)在位於通孔7及溝槽8之側面的多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積金屬膜,並藉由將反應性之含碳化合物所含的碳導入至該金屬膜,以在多孔質絕緣層4表面形成含碳金屬膜9a的步驟(圖1(c))
(e)在形成有含碳金屬膜9a之配線溝槽(通孔7、溝槽8)形成第2配線11的步驟(圖2(a)~(b))
以下依序說明各步驟。
步驟(a):在第1配線2上形成多孔質絕緣層4。
首先如圖1(a)所示,於未圖示之半導體基板上,以化學氣相沉積(CVD,Chemical Vapor Deposition)法在包含第1配線2的底層膜1上形成厚20nm左右的蝕刻停止‧抗擴散膜3。
然後,在蝕刻停止‧抗擴散膜3上形成多孔質絕緣層4。就形成多孔質絕緣層4的材料而言,若為加入加熱或UV(紫外線)照射下易汽化的有機物,然後在CVD法或旋轉塗佈介電層(SOD,Spin On Dielectric)法之成膜步驟或其後之加熱步驟或者UV照射中,有機物因分解等而消失以致形成多孔性的SiOC或SiO2
者,即可使用之。就形成多孔質絕緣層4的材料而言,可舉例如矽氧烷寡聚體、有機矽前驅物、矽氧烷單體等。本實施形態中,塗佈含有界面活性劑及矽氧烷寡聚體的溶液,並於350℃氮環境氣體中鍛燒,可形成由SiO2
構成的低介電常數多孔質絕緣膜。
步驟(b):在多孔質絕緣層4形成配線溝槽(通孔7、溝槽8)。
形成多孔質絕緣層4後,以通常的方法使用光阻遮罩而蝕刻多孔質絕緣層4,形成通孔7及溝槽8。然後,利用灰化去除光阻遮罩(圖1(b))。通孔7貫通多孔質絕緣層4、蝕刻停止‧抗擴散膜3到達底層膜1,而溝槽8具有多孔質絕緣層4之膜厚約1/2的深度。
步驟(c):使反應性之含碳化合物浸漬在多孔質絕緣層4。
步驟(c)中,藉由使得形成有通孔7及溝槽8的多孔質絕緣層4暴露於含有已汽化之反應性之含碳化合物的環境氣體下,以使反應性之含碳化合物浸漬在多孔質絕緣層4中。
反應性之含碳化合物可使用環狀矽氧烷,或者進行氧化反應或還原反應的二級醇等。就環狀矽氧烷而言,可舉例如六甲基二矽氮烷(HMDS)、三甲矽基二甲胺(TMSDMA)、三甲矽基乙醯胺(TMSA)、四甲基環四矽氧烷(TMCTS)、八甲基環四矽氧烷(OMCTS)等;就二級醇而言,可舉例如異丙醇等。該等化合物可混合1種或2種以上而使用。
本實施形態中,於已加熱至350℃左右的減壓爐內,使得形成有通孔7及溝槽8的多孔質絕緣層4暴露於已汽化的六甲基二矽氮烷(HMDS)環境氣體中30分鐘,可使蒸氣擴散至多孔質絕緣層4內部。因此,可認為係以有機矽或有機基團潤飾多孔質絕緣層4內的細孔表面。
然後,以清洗步驟去除附著於第1配線表面的反應性之含碳化合物。
步驟(d):在位於通孔7及溝槽8之側面的多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積金屬膜,並藉由將反應性之含碳化合物所含的碳導入至該金屬膜,以在多孔質絕緣層4表面形成含碳金屬膜9a。
首先,以使用金屬濺鍍靶材、He或Ar等氣體電漿的PVD法,在多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積金屬膜。利用PVD(Physical Vapor Deposition)法的熱,使反應性之含碳化合物從多孔質絕緣層4中消散,將反應性之含碳化合物所含的碳導入至所沉積的金屬膜。藉此,選擇性地在多孔質絕緣層4表面形成含碳金屬膜9a,並利用以PVD法所沉積的金屬,在第1配線2之表面形成金屬膜9b(圖1(c))。又本實施形態中,PVD法的熱包含:被加熱基板的熱,及濺鍍時所產生的熱。
作為金屬濺鍍靶材,可使用鈦(Ti)、鎢(W)、鋁(Al)、鉭(Ta)等,形成較穩定之氧化物、碳化物的金屬之單體或其等之合金。
本實施形態中,以使用Ti靶材、He氣體電漿的PVD法,可在多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積Ti。可在多孔質絕緣層4表面形成TiC膜,作為含碳金屬膜。含碳金屬膜9a的組成可使用奧杰電子能譜術(AES,Auger Electron Spectroscopy)(產品名:PHI650,ULVAC-PHI Inc.製)而測定。又,第1配線2之表面形成Ti膜。
步驟(e):在形成有含碳金屬膜9a之配線溝槽(通孔7、溝槽8)形成第2配線11。
本實施形態中,於設置供電膜後,以電鍍法在通孔7、溝槽8埋設Cu或Al(圖2(a))。然後,以通常的(CMP,Chemical Mechanical Polishing)化學機械研磨法去除多餘的金屬等,形成第2配線11。
然後,以其後通常的處理製造半導體裝置。
以下,說明本實施形態之效果。
本實施形態之半導體裝置包含有隔離多孔質絕緣層4與第2配線11的含碳金屬膜9a。
含碳金屬膜9a係抑制金屬控散的效果高,抑制金屬從第2配線11往多孔質絕緣層4擴散。因此,由於抑制電遷移或應力遷移等的產生,連接可靠度提高,故可提供具有動作保證壽命長之高品質配線的半導體裝置。
而且,由於第1配線2與第2配線11之間未形成含碳金屬膜9a等的絕緣膜,因此配線間的接觸電阻變小,形成配線電阻小的高性能配線。因此,半導體裝置的品質提高,產量也提高。
含碳金屬膜9a可包含TiC、TaC、WC或AlC3
。
因此,可得到有效地抑制金屬從第2配線11往多孔質絕緣層4擴散,且連接可靠度良好的半導體裝置。
含碳金屬膜9a之膜厚可為3nm以上、50nm以下。
因此,可得到有效地抑制金屬從第2配線11往多孔質絕緣層4擴散,且連接可靠度良好的半導體裝置。
本實施形態之半導體裝置之製造方法中,在浸漬有反應性之含碳化合物之多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積金屬膜。該步驟中,藉由將反應性之含碳化合物所含的碳導入至所沉積的金屬膜,可僅在多孔質絕緣層4表面形成含碳金屬膜9a。而且,第1配線2與第2配線11之間未形成含碳金屬膜9a等的絕緣膜。
依本實施形態,於多孔質絕緣層4表面,藉由將反應性之含碳化合物所含的碳導入至金屬膜,可選擇性地在多孔質絕緣層4表面形成含碳金屬膜9a,而且第1配線2表面未形成絕緣膜。如上述,可利用簡單的方法,得到連接可靠度及品質良好,且產品之產量提高的半導體裝置。
本實施形態中,使多孔質絕緣層4暴露於含有已汽化之反應性之含碳化合物的環境氣體下,以使反應性之含碳化合物浸漬在多孔質絕緣層4中。
以該步驟,可有效率地使多孔質絕緣層4含有反應性之含碳化合物。
本實施形態之反應性之含碳化合物係可利用熱,將碳導入至所沉積的金屬膜。因此,利用濺鍍(PVD法)沉積金屬膜的同時,可利用濺鍍所產生的熱以將碳導入至金屬膜。
利用如此簡便的方法製造半導體裝置,該半導體裝置係選擇性地在多孔質絕緣層4表面形成含碳金屬膜9a,另一方面在第1配線2表面未形成絕緣膜。
本實施形態中,反應性之含碳化合物選自於環狀矽氧烷及二級醇。
該等化合物於已汽化的狀態下容易浸漬於多孔質絕緣層4內,且因濺鍍所產生的熱而蒸發之同時,可輕易地將碳導入至所沉積的金屬膜。因此,可選擇性地在多孔質絕緣層4表面形成含碳金屬膜9a。
本實施形態之半導體裝置如圖4(b)所示,包含:第1配線2;多孔質絕緣層4,形成於第1配線2上;及第2配線11,埋設於多孔質絕緣層4中,且與第1配線2電連接。而且,多孔質絕緣層4與第2配線11之間,從多孔質絕緣層4側依序包含有含碳金屬膜9a及金屬阻障膜10。第1配線2與金屬阻障膜10之間則包含金屬膜9b。
含碳金屬膜9a包含與第1實施形態同樣的金屬碳化物。又,本實施形態中,含碳金屬膜9a之厚度為3nm以上、50nm以下。本實施形態中,以使用膜厚25nm左右之含碳金屬膜9a的例子,進行說明。
本實施形態中,金屬阻障膜10之膜厚為10nm左右。
接著,說明本實施形態之半導體裝置之製造方法。
本實施形態之半導體裝置之製造方法包含下列步驟:
(a)在第1配線2上形成多孔質絕緣層4的步驟(圖3(a)~(b))
(b)在多孔質絕緣層4形成配線溝槽(通孔7、溝槽8)的步驟(圖3(b))
(c)使反應性之含碳化合物浸漬在多孔質絕緣層4的步驟
(d)在位於通孔7及溝槽8之側面的多孔質絕緣層4表面,及露出通孔7之底面的第1配線2之表面沉積金屬膜,並藉由將反應性之含碳化合物所含的碳導入至該金屬膜,以在多孔質絕緣層4表面形成含碳金屬膜9a的步驟(圖3(c))
(e)在含碳金屬膜9a及金屬膜9b上形成金屬阻障膜10的步驟(圖4(a))
(f)在形成有含碳金屬膜9a之配線溝槽(通孔7、溝槽8)內形成第2配線11的步驟(圖4(a)~(b))
以下,僅針對與第1實施形態不同的步驟(e)及步驟(f)進行說明。
步驟(e):在含碳金屬膜9a及金屬膜9b上形成金屬阻障膜10(圖4(a))。
本實施形態中,金屬阻障膜10可以通常的方法形成。作為構成金屬阻障膜10的屬,可使用對於構成第2配線11之金屬的擴散之抑制效果大者。
步驟(f):在形成有含碳金屬膜9a之配線溝槽(通孔7、溝槽8)內形成第2配線11(圖4(a)~(b))
本實施形態中,於含碳金屬膜9a及金屬膜9b表面設置供電膜後,以電鍍法在通孔7、溝槽8埋設Cu或Al(圖4(a))。然後,以通常的CMP法去除多餘的金屬等,形成第2配線11(圖4(b))。
然後,以其後通常的處理製造半導體裝置。
以下,說明本實施形態之效果。
本實施形態之半導體裝置由於在含碳金屬膜9a上包含有金屬阻障膜10,故更加抑制金屬從第2配線11往多孔質絕緣層4擴散。因此,由於抑制電遷移或應力遷移等的產生,連接可靠度提高,故可提供具有動作保證壽命長之高品質配線的半導體裝置。
以上,已參照圖式而說明本發明之實施形態,但該等形態為本發明之例示,亦可採用上述形態以外的各種構成。
第1實施形態之半導體裝置中,已利用含碳金屬膜9a為均一組成的例子進行說明,但多孔質絕緣層4側之含碳金屬膜9a表層的碳濃度也可比第2配線11側之含碳金屬膜9a表層的碳濃度高。
本實施形態之半導體裝置之製造方法中,使用已汽化之反應性之含碳化合物以使反應性之含碳化合物浸漬在多孔質絕緣層4中,但也可使得將反應性之含碳化合物溶解或分散後的溶媒等滲入至孔隙,然後藉由加熱乾燥,以使反應性之含碳化合物浸漬在多孔質絕緣層4中。
1...底層膜
2...第1配線
3...蝕刻停止‧抗擴散膜
4...多孔質絕緣層
7...通孔
8...溝槽
9a...含碳金屬膜
9b...金屬膜
10...金屬阻障膜
11...第2配線
101...底層膜
102...配線(下層配線)
103...蝕刻停止‧抗擴散膜
104...多孔質絕緣層
107...通孔
108...溝槽
108a...溝槽底
109c...聚合物膜
110...Cu阻隔性的TaN膜
111...Cu膜
圖1(a)~1(c)係示意地顯示依第1實施形態之半導體裝置之製造方法的程序剖面圖。
圖2(a)、2(b)係示意地顯示依第1實施形態之半導體裝置之製造方法的程序剖面圖。
圖3(a)~3(c)係示意地顯示依第2實施形態之半導體裝置之製造方法的程序剖面圖。
圖4(a)、4(b)係示意地顯示依第2實施形態之半導體裝置之製造方法的程序剖面圖。
圖5(a)~5(c)係示意地顯示習知的半導體裝置之製造方法的程序剖面圖。
圖6(a)、6(b)係示意地顯示習知的半導體裝置之製造方法的程序剖面圖。
圖7(a)~7(c)係示意地顯示習知的半導體裝置之製造方法的程序剖面圖。
圖8(a)、8(b)係示意地顯示習知的半導體裝置之製造方法的程序剖面圖。
1...底層膜
2...第1配線
3...蝕刻停止‧抗擴散膜
4...多孔質絕緣層
9a...含碳金屬膜
9b...金屬膜
11...第2配線
Claims (13)
- 一種半導體裝置,其特徵係包含:第1配線;多孔質絕緣層,形成於該第1配線上;第2配線,埋設於該多孔質絕緣層中,且與該第1配線電連接;及含碳金屬膜,設於該多孔質絕緣層與該第2配線之間,用以隔離該多孔質絕緣層與該第2配線;該含碳金屬膜形成於該多孔質絕緣層的表面;該多孔質絕緣層側之該含碳金屬膜表層的碳濃度,較該第2配線側之該含碳金屬膜表層的碳濃度高;該多孔質絕緣層不含碳。
- 如申請專利範圍第1項之半導體裝置,其中,該多孔質絕緣層係由SiO2 所構成。
- 如申請專利範圍第1項之半導體裝置,其中,該含碳金屬膜未形成於該第1配線與該第2配線之間。
- 如申請專利範圍第1項之半導體裝置,其中,該含碳金屬膜與該第2配線之間包含金屬阻障膜。
- 如申請專利範圍第1項之半導體裝置,其中,該含碳金屬膜為TiC、TaC、WC或AlC3 。
- 如申請專利範圍第1項之半導體裝置,其中,該含碳金屬膜之膜厚為3nm以上、50nm以下。
- 一種半導體裝置之製造方法,包含:在第1配線上形成多孔質絕緣層的步驟;在該多孔質絕緣層形成配線溝槽的步驟;使反應性之含碳化合物浸漬在該多孔質絕緣層的步驟;在位於該配線溝槽之側面的該多孔質絕緣層表面,及露出該配線溝槽之底面的該第1配線之表面沉積金屬膜,並藉由將該反應性之含碳化合物所含的碳導入至該金屬膜,以在該多孔質絕緣層表面形成含碳金屬膜的步驟;及 在形成有該含碳金屬膜之該配線溝槽形成第2配線的步驟;該使反應性之含碳化合物浸漬的步驟包含:將形成有該配線溝槽的該多孔質絕緣層浸漬於含有該反應性之含碳化合物的溶液,而進行加熱乾燥的步驟。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,該使反應性之含碳化合物浸漬的步驟包含:在含有已汽化之該反應性之含碳化合物的環境氣體下,使反應性之含碳化合物浸漬在該多孔質絕緣層的步驟。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,該反應性之含碳化合物為熱反應性,且該形成含碳金屬膜的步驟包含如下步驟:利用濺鍍,在該多孔質絕緣層表面,及露出該配線溝槽之底面的該第1配線之表面沉積金屬膜,並利用該濺鍍所產生的熱,將該反應性之含碳化合物所含的碳導入至該金屬膜。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,於該形成含碳金屬膜的步驟之後包含如下步驟:在該含碳金屬膜上形成金屬阻障膜。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,該反應性之含碳化合物選自於環狀矽氧烷及二級醇。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,該含碳金屬膜包含TiC、TaC、WC或AlC3 。
- 如申請專利範圍第7項之半導體裝置之製造方法,其中,該含碳金屬膜之膜厚為3nm以上、50nm以下。
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