TW200540425A - Test probe and manufacturing method of same - Google Patents

Test probe and manufacturing method of same Download PDF

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Publication number
TW200540425A
TW200540425A TW094106626A TW94106626A TW200540425A TW 200540425 A TW200540425 A TW 200540425A TW 094106626 A TW094106626 A TW 094106626A TW 94106626 A TW94106626 A TW 94106626A TW 200540425 A TW200540425 A TW 200540425A
Authority
TW
Taiwan
Prior art keywords
probe
contact
contact portion
inspection
conductive
Prior art date
Application number
TW094106626A
Other languages
English (en)
Chinese (zh)
Other versions
TWI379080B (enExample
Inventor
Katsuya Okumura
Toshihiro Yonezawa
Original Assignee
Octec Inc
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Octec Inc, Tokyo Electron Ltd filed Critical Octec Inc
Publication of TW200540425A publication Critical patent/TW200540425A/zh
Application granted granted Critical
Publication of TWI379080B publication Critical patent/TWI379080B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/51—Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5193—Electrical connector or terminal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
TW094106626A 2004-03-05 2005-03-04 Test probe and manufacturing method of same TW200540425A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004063228A JP4723195B2 (ja) 2004-03-05 2004-03-05 プローブの製造方法

Publications (2)

Publication Number Publication Date
TW200540425A true TW200540425A (en) 2005-12-16
TWI379080B TWI379080B (enExample) 2012-12-11

Family

ID=34918148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106626A TW200540425A (en) 2004-03-05 2005-03-04 Test probe and manufacturing method of same

Country Status (7)

Country Link
US (1) US7649369B2 (enExample)
EP (1) EP1724594A1 (enExample)
JP (1) JP4723195B2 (enExample)
KR (1) KR100835245B1 (enExample)
CN (1) CN100442058C (enExample)
TW (1) TW200540425A (enExample)
WO (1) WO2005085877A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP4855757B2 (ja) * 2005-10-19 2012-01-18 富士通株式会社 カーボンナノチューブパッド及び電子デバイス
JP2008039639A (ja) * 2006-08-08 2008-02-21 Hioki Ee Corp 接触式計測用プローブ
US7731503B2 (en) * 2006-08-21 2010-06-08 Formfactor, Inc. Carbon nanotube contact structures
TW200815763A (en) * 2006-09-26 2008-04-01 Nihon Micronics Kabushiki Kaisha Electrical test probe and electrical test probe assembly
KR100804738B1 (ko) * 2007-01-16 2008-02-19 삼성전자주식회사 이온화 충돌 반도체 소자를 이용한 반도체 탐침 및 이를구비한 정보 저장 장치와 그의 제조 방법
JP2008235555A (ja) * 2007-03-20 2008-10-02 Shinko Electric Ind Co Ltd 電子装置の製造方法及び基板及び半導体装置
KR100799166B1 (ko) * 2007-07-02 2008-01-29 이재하 프로브 배열체의 제조방법
WO2009084770A1 (en) 2007-12-28 2009-07-09 Phicom Corporation Contact tip structure of a connecting element
CN101526555B (zh) * 2008-03-04 2011-12-07 跃沄科技有限公司 一种制探针的方法
JPWO2010007816A1 (ja) * 2008-07-18 2012-01-05 東京エレクトロン株式会社 プローブ
JP5325085B2 (ja) * 2009-12-24 2013-10-23 日本碍子株式会社 接続装置
KR101047550B1 (ko) 2010-07-02 2011-07-07 주식회사 아이에스시테크놀러지 탐침부를 가지는 도전성 접속부재 및 그 도전성 접속부재를 제조하는 방법
WO2012002763A2 (en) 2010-07-02 2012-01-05 Jae Hak Lee Test probe for test and fabrication method thereof
CN102610941A (zh) * 2011-01-19 2012-07-25 富士康(昆山)电脑接插件有限公司 测试连接器
JP5688064B2 (ja) 2012-11-02 2015-03-25 本田技研工業株式会社 半導体素子検査装置及び検査方法
CN103091617B (zh) * 2013-01-29 2017-08-15 无锡华润上华科技有限公司 一种半导体测试方法
JP5936579B2 (ja) * 2013-05-08 2016-06-22 本田技研工業株式会社 電流印加装置
EP2894483B1 (en) * 2014-01-09 2018-06-27 Multitest elektronische Systeme GmbH Contact tip and contact element and method of producing the same
US10732201B2 (en) * 2014-04-13 2020-08-04 Infineon Technologies Ag Test probe and method of manufacturing a test probe
TWI564569B (zh) * 2015-09-21 2017-01-01 旺矽科技股份有限公司 探針結構及其製造方法
CN106443188B (zh) * 2016-11-09 2020-08-25 武汉新芯集成电路制造有限公司 一种电阻量测探头
KR101962702B1 (ko) * 2017-06-28 2019-03-27 주식회사 아이에스시 포고핀용 탐침부재, 이의 제조 방법 및 이를 포함하는 포고핀
KR101976702B1 (ko) * 2017-08-31 2019-05-09 주식회사 아이에스시 탄소나노튜브가 포함된 검사용 소켓
CN108279368A (zh) * 2018-01-23 2018-07-13 德淮半导体有限公司 测试机台及测试方法
JP7497629B2 (ja) * 2020-07-03 2024-06-11 富士電機株式会社 半導体チップの試験装置および試験方法
CN116263473A (zh) * 2021-12-13 2023-06-16 合肥本源量子计算科技有限责任公司 探针装置、超导量子比特结电阻测量装置、系统及方法

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JP4084498B2 (ja) * 1998-10-27 2008-04-30 松下電器産業株式会社 検査用基板
JP4361161B2 (ja) 1999-04-06 2009-11-11 日東電工株式会社 異方導電性コネクター
US6352454B1 (en) * 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
JP2002131334A (ja) * 2000-10-24 2002-05-09 Nec Yamaguchi Ltd プローブ針、プローブカード、及びプローブカードの作製方法
US7015707B2 (en) * 2002-03-20 2006-03-21 Gabe Cherian Micro probe
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JP3771907B2 (ja) 2002-05-27 2006-05-10 山一電機株式会社 電極の回復処理方法
KR100373762B1 (en) * 2002-09-25 2003-02-26 Uk Ki Lee Method for manufacturing cavity-type micro-probe using mems technology and micro-probe according to the same

Also Published As

Publication number Publication date
EP1724594A1 (en) 2006-11-22
KR20070005605A (ko) 2007-01-10
JP2005249693A (ja) 2005-09-15
JP4723195B2 (ja) 2011-07-13
US20080036479A1 (en) 2008-02-14
US7649369B2 (en) 2010-01-19
CN1930482A (zh) 2007-03-14
CN100442058C (zh) 2008-12-10
TWI379080B (enExample) 2012-12-11
WO2005085877A1 (ja) 2005-09-15
KR100835245B1 (ko) 2008-06-05

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MM4A Annulment or lapse of patent due to non-payment of fees