TW200536947A - A method for extending time between chamber cleaning process - Google Patents

A method for extending time between chamber cleaning process Download PDF

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Publication number
TW200536947A
TW200536947A TW094110235A TW94110235A TW200536947A TW 200536947 A TW200536947 A TW 200536947A TW 094110235 A TW094110235 A TW 094110235A TW 94110235 A TW94110235 A TW 94110235A TW 200536947 A TW200536947 A TW 200536947A
Authority
TW
Taiwan
Prior art keywords
processing chamber
substrate
processing
film
patent application
Prior art date
Application number
TW094110235A
Other languages
English (en)
Chinese (zh)
Inventor
Raymand Joe
John Gumpher
Anthony Dip
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200536947A publication Critical patent/TW200536947A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW094110235A 2004-03-31 2005-03-31 A method for extending time between chamber cleaning process TW200536947A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/814,713 US7604841B2 (en) 2004-03-31 2004-03-31 Method for extending time between chamber cleaning processes

Publications (1)

Publication Number Publication Date
TW200536947A true TW200536947A (en) 2005-11-16

Family

ID=34960384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110235A TW200536947A (en) 2004-03-31 2005-03-31 A method for extending time between chamber cleaning process

Country Status (4)

Country Link
US (1) US7604841B2 (https=)
JP (1) JP5219505B2 (https=)
TW (1) TW200536947A (https=)
WO (1) WO2005104207A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108165953A (zh) * 2017-12-25 2018-06-15 上海华力微电子有限公司 改善hto厚度稳定性的方法

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JP4866658B2 (ja) * 2006-05-23 2012-02-01 東京エレクトロン株式会社 半導体製造装置
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
JP5008957B2 (ja) 2006-11-30 2012-08-22 東京エレクトロン株式会社 シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
KR100809852B1 (ko) * 2007-05-17 2008-03-04 (주)엘오티베큠 일체형 진공발생장치
CN102270579A (zh) * 2010-06-04 2011-12-07 中芯国际集成电路制造(上海)有限公司 一种遮挡晶片制备方法
US8590705B2 (en) * 2010-06-11 2013-11-26 Air Products And Chemicals, Inc. Cylinder surface treated container for monochlorosilane
JP2014209558A (ja) * 2013-03-27 2014-11-06 東京エレクトロン株式会社 シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
CN107099782A (zh) * 2016-02-23 2017-08-29 常州国成新材料科技有限公司 一种制备石墨烯、六角氮化硼等薄膜材料的化学气相沉积装置
JP6648627B2 (ja) * 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
US11761079B2 (en) 2017-12-07 2023-09-19 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
KR102836261B1 (ko) * 2018-09-21 2025-07-18 램 리써치 코포레이션 플라즈마 프로세싱 챔버를 컨디셔닝하기 위한 방법
US12371781B2 (en) * 2018-10-19 2025-07-29 Lam Research Corporation In situ protective coating of chamber components for semiconductor processing
JP7076499B2 (ja) * 2020-06-22 2022-05-27 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN113889403A (zh) * 2021-12-08 2022-01-04 陕西亚成微电子股份有限公司 一种栅氧化层生长方法
CN116043190A (zh) * 2022-11-02 2023-05-02 长鑫存储技术有限公司 二氧化硅薄膜及其预沉积方法、半导体结构
CN117721441B (zh) * 2023-12-29 2026-03-03 上海陛通半导体能源科技股份有限公司 一种高应力氮化硅薄膜及其形成方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108165953A (zh) * 2017-12-25 2018-06-15 上海华力微电子有限公司 改善hto厚度稳定性的方法
CN108165953B (zh) * 2017-12-25 2020-06-30 上海华力微电子有限公司 改善hto厚度稳定性的方法

Also Published As

Publication number Publication date
US20050221001A1 (en) 2005-10-06
US7604841B2 (en) 2009-10-20
JP2007531304A (ja) 2007-11-01
WO2005104207A1 (en) 2005-11-03
JP5219505B2 (ja) 2013-06-26

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