TW200512158A - Silane polymer and method for forming silicon film - Google Patents

Silane polymer and method for forming silicon film

Info

Publication number
TW200512158A
TW200512158A TW093116983A TW93116983A TW200512158A TW 200512158 A TW200512158 A TW 200512158A TW 093116983 A TW093116983 A TW 093116983A TW 93116983 A TW93116983 A TW 93116983A TW 200512158 A TW200512158 A TW 200512158A
Authority
TW
Taiwan
Prior art keywords
silicon film
disclosed
silane polymer
composition
photo
Prior art date
Application number
TW093116983A
Other languages
English (en)
Other versions
TWI313252B (zh
Inventor
Haruo Iwasawa
Dao-Hai Wang
Yasuo Matsuki
Hitoshi Kato
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200512158A publication Critical patent/TW200512158A/zh
Application granted granted Critical
Publication of TWI313252B publication Critical patent/TWI313252B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
TW093116983A 2003-06-13 2004-06-11 Silane polymer and method for forming silicon film TW200512158A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003169769 2003-06-13

Publications (2)

Publication Number Publication Date
TW200512158A true TW200512158A (en) 2005-04-01
TWI313252B TWI313252B (zh) 2009-08-11

Family

ID=33549380

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116983A TW200512158A (en) 2003-06-13 2004-06-11 Silane polymer and method for forming silicon film

Country Status (7)

Country Link
US (2) US20060159859A1 (zh)
EP (1) EP1640342A4 (zh)
JP (2) JP4258646B2 (zh)
KR (1) KR101100562B1 (zh)
CN (1) CN100355653C (zh)
TW (1) TW200512158A (zh)
WO (1) WO2004110929A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8461284B2 (en) 2006-10-06 2013-06-11 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
JP4725146B2 (ja) * 2005-03-17 2011-07-13 セイコーエプソン株式会社 高次シラン組成物、膜付基板の製造方法、電気光学装置および電子デバイス
WO2007044429A2 (en) 2005-10-05 2007-04-19 Nanogram Corporation Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
JP2007284639A (ja) * 2006-04-20 2007-11-01 Jsr Corp リン原子含有高次シラン化合物の製造法及びそれを用いたリン含有シリコン膜の形成方法
JP4043498B2 (ja) * 2006-06-16 2008-02-06 シャープ株式会社 固相シートの製造方法
JP2009200419A (ja) * 2008-02-25 2009-09-03 Seiko Epson Corp 太陽電池の製造方法
US9336925B1 (en) 2008-11-26 2016-05-10 Thin Film Electronics Asa Siloxanes, doped siloxanes, methods for their synthesis, compositions containing the same, and films formed therefrom
DE102008063552A1 (de) * 2008-12-05 2010-06-10 Varta Microbattery Gmbh Neues Elektrodenaktivmaterial für elektrochemische Elemente
JP5604044B2 (ja) * 2009-01-09 2014-10-08 独立行政法人科学技術振興機構 高次シラン組成物および膜付基板の製造方法
DE102009053806A1 (de) * 2009-11-18 2011-05-19 Evonik Degussa Gmbh Verfahren zur Herstellung von Siliciumschichten
DE102010002405A1 (de) * 2010-02-26 2011-09-01 Evonik Degussa Gmbh Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung
DE102010040231A1 (de) 2010-09-03 2012-03-08 Evonik Degussa Gmbh p-Dotierte Siliciumschichten
DE102010041842A1 (de) 2010-10-01 2012-04-05 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Hydridosilanverbindungen
JP6028238B2 (ja) * 2011-02-08 2016-11-16 小川　一文 半導体微粒子膜、ダイオード、光電変換素子およびそれらの製造方法
JP2012164898A (ja) * 2011-02-08 2012-08-30 Kagawa Univ 半導体微粒子膜、ダイオード、光電変換素子およびそれらの製造方法
DE102011075232B4 (de) 2011-05-04 2015-02-19 Evonik Degussa Gmbh Verfahren zum Herstellen von n-dotierten Silizium-haltigen Schichten und entsprechend hergestellte Schichten
CN104797738B (zh) 2012-12-12 2019-02-05 奎克涂层（澳大利亚）私人有限公司 合金涂层的工件
KR102155727B1 (ko) * 2012-12-25 2020-09-14 가부시기가이샤 닛뽕쇼꾸바이 사이클로헥사실란 및 그 제조방법
DE102013010101A1 (de) 2013-06-18 2014-12-18 Evonik Industries Ag Formulierungen umfassend Hydridosilane und Hydridosilan-Oligomere, Verfahren zu ihrer Herstellung und ihrer Verwendung
DE102013010102A1 (de) 2013-06-18 2014-12-18 Evonik Industries Ag Formulierungen umfassend Hydridosilane und Hydridosilan-Oligomere, Verfahren zu ihrer Herstellung und ihrer Verwendung
US10450419B2 (en) 2014-07-16 2019-10-22 Thin Film Electronics Asa High-molecular-weight polysilane and method for producing same
JP2017149790A (ja) * 2014-07-16 2017-08-31 日産化学工業株式会社 加熱重合によるポリシランの製造方法
CN106573785A (zh) * 2014-07-16 2017-04-19 薄膜电子有限公司 使用浓缩法的环状硅烷的制造方法
US10414661B2 (en) 2014-11-04 2019-09-17 Thin Film Electronics Asa Method of producing silicon hydride oxide-containing solvent
CN107406261A (zh) * 2014-11-04 2017-11-28 薄膜电子有限公司 用于硅烷的聚合抑制剂
JP6322131B2 (ja) * 2014-12-24 2018-05-09 東京エレクトロン株式会社 シリコン膜の成膜方法および成膜装置
JP6451340B2 (ja) * 2015-01-22 2019-01-16 株式会社豊田中央研究所 複合体及びその製造方法
DE102015225289A1 (de) 2015-12-15 2017-06-22 Evonik Degussa Gmbh Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
EP3590889B1 (en) 2018-07-05 2020-12-02 Evonik Operations GmbH Preparation of 2,2,4,4-tetrasilylpentasilane in the presence of lewis acids
JP7156620B2 (ja) * 2018-10-15 2022-10-19 東京エレクトロン株式会社 微細パターンを有する基板にシリコン膜を形成する方法
JP2020083728A (ja) * 2018-11-29 2020-06-04 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ブロックコポリマーを含んでなるアモルファスシリコン形成組成物、およびそれを用いたアモルファスシリコン膜の製造方法
EP3702397B1 (en) 2019-02-26 2021-06-09 Evonik Operations GmbH Method for the preparation of hydridosilane oligomers

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704444A (en) * 1984-02-10 1987-11-03 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
JPH0717753B2 (ja) * 1990-09-14 1995-03-01 工業技術院長 ポリシラン類の製造方法
US5403943A (en) * 1992-01-21 1995-04-04 Shin-Etsu Chemical Company, Limited Chloro-terminated polysilane
JP3116759B2 (ja) * 1994-03-11 2000-12-11 信越化学工業株式会社 ポリシラン及びその製造方法
US5866471A (en) * 1995-12-26 1999-02-02 Kabushiki Kaisha Toshiba Method of forming semiconductor thin film and method of fabricating solar cell
US6270948B1 (en) * 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US6140448A (en) * 1996-08-29 2000-10-31 Director-General Of Agency Of Industrial Science And Technology Process for preparing polysilane by catalytic dehydrogenative condensation of organosilane and metal complex catalyst therefor
WO1998030618A1 (fr) * 1997-01-09 1998-07-16 Osaka Gas Company Limited Polysilanes et leur procede de production
DE60039744D1 (de) * 1999-03-30 2008-09-18 Seiko Epson Corp Verfahren zur Hersltellung einer Siliziumschicht
JP2001220445A (ja) * 2000-02-07 2001-08-14 Hitachi Chem Co Ltd ポリシランの製造方法
JP3424232B2 (ja) * 2000-03-13 2003-07-07 ジェイエスアール株式会社 シリコン膜の形成方法
ATE518972T1 (de) * 2001-08-14 2011-08-15 Jsr Corp Silanzusammensetzung, verfahren zum herstellen eines siliziumfilms und einer solarzelle
JP4419357B2 (ja) * 2001-10-17 2010-02-24 Ｊｓｒ株式会社 シラン組成物及びそれを用いた太陽電池の製造方法
JP2003318119A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp シリコン膜およびその形成方法、ならびに、液晶表示装置、有機ｅｌ表示装置、電子機器および機器
JP2003313299A (ja) * 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
JP2004186320A (ja) * 2002-12-02 2004-07-02 Jsr Corp シリコン膜形成用組成物および太陽電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8461284B2 (en) 2006-10-06 2013-06-11 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
TWI427106B (zh) * 2006-10-06 2014-02-21 Kovio Inc 矽聚合物，聚合矽化合物之方法，及由該矽聚合物形成薄膜之方法
US8846507B2 (en) 2006-10-06 2014-09-30 Thin Film Electronics Asa Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers

Also Published As

Publication number Publication date
CN1697781A (zh) 2005-11-16
JP2005022964A (ja) 2005-01-27
EP1640342A4 (en) 2006-11-22
KR20060027296A (ko) 2006-03-27
US20060159859A1 (en) 2006-07-20
TWI313252B (zh) 2009-08-11
CN100355653C (zh) 2007-12-19
JP4258646B2 (ja) 2009-04-30
JP5013128B2 (ja) 2012-08-29
KR101100562B1 (ko) 2011-12-29
EP1640342A1 (en) 2006-03-29
WO2004110929A1 (ja) 2004-12-23
JP2009102224A (ja) 2009-05-14
US20090215920A1 (en) 2009-08-27

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