TW200421465A - Method of forming tungsten film - Google Patents

Method of forming tungsten film Download PDF

Info

Publication number
TW200421465A
TW200421465A TW093106061A TW93106061A TW200421465A TW 200421465 A TW200421465 A TW 200421465A TW 093106061 A TW093106061 A TW 093106061A TW 93106061 A TW93106061 A TW 93106061A TW 200421465 A TW200421465 A TW 200421465A
Authority
TW
Taiwan
Prior art keywords
tungsten film
gas
forming
tungsten
item
Prior art date
Application number
TW093106061A
Other languages
English (en)
Chinese (zh)
Other versions
TWI312172B (https=
Inventor
Hotaka Ishizuka
Kohichi Satoh
Cheng Fang
Masao Yoshioka
Kenji Suzuki
Yasutaka Mizoguchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200421465A publication Critical patent/TW200421465A/zh
Application granted granted Critical
Publication of TWI312172B publication Critical patent/TWI312172B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093106061A 2003-03-07 2004-03-08 Method of forming tungsten film TW200421465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

Publications (2)

Publication Number Publication Date
TW200421465A true TW200421465A (en) 2004-10-16
TWI312172B TWI312172B (https=) 2009-07-11

Family

ID=33124364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106061A TW200421465A (en) 2003-03-07 2004-03-08 Method of forming tungsten film

Country Status (3)

Country Link
JP (1) JP3956049B2 (https=)
KR (2) KR100785534B1 (https=)
TW (1) TW200421465A (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
JP5215852B2 (ja) 2006-07-31 2013-06-19 東京エレクトロン株式会社 基板処理装置およびコンディショニング要否決定方法
JP2008244298A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd 金属膜の成膜方法、多層配線構造の形成方法、半導体装置の製造方法、成膜装置
JP5547380B2 (ja) * 2008-04-30 2014-07-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US20100267230A1 (en) 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
KR20110075915A (ko) * 2009-12-29 2011-07-06 주식회사 아토 박막 증착방법
JP5959991B2 (ja) * 2011-11-25 2016-08-02 東京エレクトロン株式会社 タングステン膜の成膜方法
CN113862634A (zh) 2012-03-27 2021-12-31 诺发系统公司 钨特征填充
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
KR20160079031A (ko) 2013-11-27 2016-07-05 도쿄엘렉트론가부시키가이샤 텅스텐막의 성막 방법
JP5950892B2 (ja) 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
JP6437324B2 (ja) 2014-03-25 2018-12-12 東京エレクトロン株式会社 タングステン膜の成膜方法および半導体装置の製造方法
WO2015145750A1 (ja) * 2014-03-28 2015-10-01 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP6391355B2 (ja) 2014-08-11 2018-09-19 東京エレクトロン株式会社 タングステン膜の成膜方法
JP6706903B2 (ja) 2015-01-30 2020-06-10 東京エレクトロン株式会社 タングステン膜の成膜方法
CN105839068B (zh) 2015-01-30 2018-09-21 东京毅力科创株式会社 钨膜的成膜方法
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
JP6416679B2 (ja) 2015-03-27 2018-10-31 東京エレクトロン株式会社 タングステン膜の成膜方法
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
JP6478813B2 (ja) 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
WO2017056242A1 (ja) * 2015-09-30 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JP6710089B2 (ja) 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
US20190161853A1 (en) 2016-07-26 2019-05-30 Tokyo Electron Limited Method for forming tungsten film
JP6865602B2 (ja) * 2017-02-22 2021-04-28 東京エレクトロン株式会社 成膜方法
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
JP7190450B2 (ja) 2017-06-02 2022-12-15 アプライド マテリアルズ インコーポレイテッド 炭化ホウ素ハードマスクのドライストリッピング
US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
US10234630B2 (en) 2017-07-12 2019-03-19 Applied Materials, Inc. Method for creating a high refractive index wave guide
US10179941B1 (en) 2017-07-14 2019-01-15 Applied Materials, Inc. Gas delivery system for high pressure processing chamber
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
JP6947914B2 (ja) 2017-08-18 2021-10-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧高温下のアニールチャンバ
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202001450UA (en) 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
US10643867B2 (en) 2017-11-03 2020-05-05 Applied Materials, Inc. Annealing system and method
EP4321649B1 (en) 2017-11-11 2025-08-20 Micromaterials LLC Gas delivery system for high pressure processing chamber
JP7330181B2 (ja) 2017-11-16 2023-08-21 アプライド マテリアルズ インコーポレイテッド 高圧蒸気アニール処理装置
JP2021503714A (ja) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高圧処理システムのためのコンデンサシステム
KR102649241B1 (ko) 2018-01-24 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 고압 어닐링을 사용한 심 힐링
SG11202008256WA (en) 2018-03-09 2020-09-29 Applied Materials Inc High pressure annealing process for metal containing materials
US10714331B2 (en) 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
KR102806630B1 (ko) 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10566188B2 (en) 2018-05-17 2020-02-18 Applied Materials, Inc. Method to improve film stability
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
WO2020101935A1 (en) 2018-11-16 2020-05-22 Applied Materials, Inc. Film deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
WO2020123987A1 (en) 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN114946018A (zh) * 2020-06-30 2022-08-26 应用材料公司 在低温下的选择性钨沉积

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
JP3415207B2 (ja) * 1992-07-24 2003-06-09 東京エレクトロン株式会社 化学気相成長による金属薄膜形成方法
JPH06275624A (ja) * 1993-03-19 1994-09-30 Miyagi Oki Denki Kk 導電層の形成方法
JPH0794425A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 金属薄膜の形成方法および金属薄膜の形成装置
US6271129B1 (en) * 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
JP3070577B2 (ja) * 1998-05-15 2000-07-31 日本電気株式会社 半導体装置の製造方法
TW451305B (en) * 1999-01-13 2001-08-21 Tokyo Electron Ltd Method of forming tungsten layers and laminate structure of tungsten layers
JP3628570B2 (ja) * 1999-12-08 2005-03-16 旭化成マイクロシステム株式会社 タングステン薄膜の形成方法、半導体装置の製造方法
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6936538B2 (en) * 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
JP2002151435A (ja) * 2000-10-31 2002-05-24 Applied Materials Inc 導電部の形成方法
KR100783844B1 (ko) * 2001-08-14 2007-12-10 동경 엘렉트론 주식회사 텅스텐막의 형성 방법
JP4032872B2 (ja) * 2001-08-14 2008-01-16 東京エレクトロン株式会社 タングステン膜の形成方法
JP4103461B2 (ja) * 2001-08-24 2008-06-18 東京エレクトロン株式会社 成膜方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101899649B (zh) * 2005-07-01 2012-11-21 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US11594415B2 (en) 2016-01-16 2023-02-28 Applied Materials, Inc. PECVD tungsten containing hardmask films and methods of making
CN108463870B (zh) * 2016-01-16 2023-03-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN116313773A (zh) * 2016-01-16 2023-06-23 应用材料公司 Pecvd含钨硬掩模膜及制造方法
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition

Also Published As

Publication number Publication date
KR20040079331A (ko) 2004-09-14
KR100783845B1 (ko) 2007-12-10
JP3956049B2 (ja) 2007-08-08
KR20070075383A (ko) 2007-07-18
JP2004273764A (ja) 2004-09-30
KR100785534B1 (ko) 2007-12-12
TWI312172B (https=) 2009-07-11

Similar Documents

Publication Publication Date Title
TW200421465A (en) Method of forming tungsten film
KR102515236B1 (ko) 저 저항 텅스텐 피처 충진을 가능하게 하는 텅스텐 핵생성 프로세스
TWI623040B (zh) 沈積超薄低電阻率鎢膜用於小臨界尺寸接點及互連線之方法
CN100483637C (zh) 利用间歇前驱气流工艺形成金属层的方法
CN102265383B (zh) 用于沉积具有降低电阻率及改良表面形态的钨膜的方法
TWI796388B (zh) 減少或消除鎢膜中缺陷的方法
JP4032872B2 (ja) タングステン膜の形成方法
US20080132050A1 (en) Deposition process for graded cobalt barrier layers
TW569323B (en) Method of forming tungsten film
KR100991566B1 (ko) 금속계막 형성 방법 및 프로그램을 기록한 기록 매체
KR101217980B1 (ko) 순차 흐름 성막법을 이용한 텅스텐 성막 방법
JP2000265272A (ja) タングステン層の形成方法及びタングステン層の積層構造
US20080096381A1 (en) Atomic layer deposition process for iridium barrier layers
JP3591823B2 (ja) 成膜方法
TW202523892A (zh) 氮化硼膜之成膜方法及成膜裝置

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent