TW200421465A - Method of forming tungsten film - Google Patents

Method of forming tungsten film Download PDF

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Publication number
TW200421465A
TW200421465A TW093106061A TW93106061A TW200421465A TW 200421465 A TW200421465 A TW 200421465A TW 093106061 A TW093106061 A TW 093106061A TW 93106061 A TW93106061 A TW 93106061A TW 200421465 A TW200421465 A TW 200421465A
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TW
Taiwan
Prior art keywords
tungsten film
gas
forming
tungsten
item
Prior art date
Application number
TW093106061A
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English (en)
Chinese (zh)
Other versions
TWI312172B (https=
Inventor
Hotaka Ishizuka
Kohichi Satoh
Cheng Fang
Masao Yoshioka
Kenji Suzuki
Yasutaka Mizoguchi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200421465A publication Critical patent/TW200421465A/zh
Application granted granted Critical
Publication of TWI312172B publication Critical patent/TWI312172B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093106061A 2003-03-07 2004-03-08 Method of forming tungsten film TW200421465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

Publications (2)

Publication Number Publication Date
TW200421465A true TW200421465A (en) 2004-10-16
TWI312172B TWI312172B (https=) 2009-07-11

Family

ID=33124364

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106061A TW200421465A (en) 2003-03-07 2004-03-08 Method of forming tungsten film

Country Status (3)

Country Link
JP (1) JP3956049B2 (https=)
KR (2) KR100785534B1 (https=)
TW (1) TW200421465A (https=)

Cited By (7)

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CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition

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US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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KR20160079031A (ko) 2013-11-27 2016-07-05 도쿄엘렉트론가부시키가이샤 텅스텐막의 성막 방법
JP5950892B2 (ja) 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
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WO2015145750A1 (ja) * 2014-03-28 2015-10-01 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
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JP6541438B2 (ja) 2015-05-28 2019-07-10 東京エレクトロン株式会社 金属膜のストレス低減方法および金属膜の成膜方法
JP6478813B2 (ja) 2015-05-28 2019-03-06 東京エレクトロン株式会社 金属膜の成膜方法
CN107924829B (zh) * 2015-09-30 2021-07-23 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP6710089B2 (ja) 2016-04-04 2020-06-17 東京エレクトロン株式会社 タングステン膜の成膜方法
CN109563619A (zh) 2016-07-26 2019-04-02 东京毅力科创株式会社 钨膜的成膜方法
JP6865602B2 (ja) * 2017-02-22 2021-04-28 東京エレクトロン株式会社 成膜方法
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US10269571B2 (en) 2017-07-12 2019-04-23 Applied Materials, Inc. Methods for fabricating nanowire for semiconductor applications
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JP7609636B2 (ja) 2017-08-14 2025-01-07 ラム リサーチ コーポレーション ３次元垂直ｎａｎｄワード線用の金属充填プロセス
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CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
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JP7299898B2 (ja) 2018-01-24 2023-06-28 アプライド マテリアルズ インコーポレイテッド 高圧アニールを用いたシーム修復
CN111902929B (zh) 2018-03-09 2025-09-19 应用材料公司 用于含金属材料的高压退火处理
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101899649A (zh) * 2005-07-01 2010-12-01 东京毅力科创株式会社 钨膜的形成方法
CN101899649B (zh) * 2005-07-01 2012-11-21 东京毅力科创株式会社 钨膜的形成方法
CN101208458B (zh) * 2005-08-11 2011-06-08 东京毅力科创株式会社 金属类膜形成方法
CN110310919A (zh) * 2013-12-27 2019-10-08 朗姆研究公司 实现低电阻率钨特征填充的钨成核工艺
CN108463870A (zh) * 2016-01-16 2018-08-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US11594415B2 (en) 2016-01-16 2023-02-28 Applied Materials, Inc. PECVD tungsten containing hardmask films and methods of making
CN108463870B (zh) * 2016-01-16 2023-03-28 应用材料公司 Pecvd含钨硬掩模膜及制造方法
CN116313773A (zh) * 2016-01-16 2023-06-23 应用材料公司 Pecvd含钨硬掩模膜及制造方法
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition

Also Published As

Publication number Publication date
KR20070075383A (ko) 2007-07-18
JP3956049B2 (ja) 2007-08-08
KR100785534B1 (ko) 2007-12-12
KR20040079331A (ko) 2004-09-14
JP2004273764A (ja) 2004-09-30
TWI312172B (https=) 2009-07-11
KR100783845B1 (ko) 2007-12-10

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