JP3956049B2 - タングステン膜の形成方法 - Google Patents

タングステン膜の形成方法 Download PDF

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Publication number
JP3956049B2
JP3956049B2 JP2003062443A JP2003062443A JP3956049B2 JP 3956049 B2 JP3956049 B2 JP 3956049B2 JP 2003062443 A JP2003062443 A JP 2003062443A JP 2003062443 A JP2003062443 A JP 2003062443A JP 3956049 B2 JP3956049 B2 JP 3956049B2
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Prior art keywords
tungsten film
gas
tungsten
film forming
passivation
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Expired - Lifetime
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JP2003062443A
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Japanese (ja)
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JP2004273764A (ja
Inventor
穂高 石塚
耕一 佐藤
成 方
正雄 吉岡
健二 鈴木
泰隆 溝口
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2003062443A priority Critical patent/JP3956049B2/ja
Priority to KR1020040015267A priority patent/KR100785534B1/ko
Priority to TW093106061A priority patent/TW200421465A/zh
Publication of JP2004273764A publication Critical patent/JP2004273764A/ja
Priority to KR1020070059454A priority patent/KR100783845B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003062443A 2003-03-07 2003-03-07 タングステン膜の形成方法 Expired - Lifetime JP3956049B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法
KR1020040015267A KR100785534B1 (ko) 2003-03-07 2004-03-06 텅스텐막의 형성 방법
TW093106061A TW200421465A (en) 2003-03-07 2004-03-08 Method of forming tungsten film
KR1020070059454A KR100783845B1 (ko) 2003-03-07 2007-06-18 텅스텐막의 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003062443A JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

Publications (2)

Publication Number Publication Date
JP2004273764A JP2004273764A (ja) 2004-09-30
JP3956049B2 true JP3956049B2 (ja) 2007-08-08

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JP2003062443A Expired - Lifetime JP3956049B2 (ja) 2003-03-07 2003-03-07 タングステン膜の形成方法

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JP (1) JP3956049B2 (https=)
KR (2) KR100785534B1 (https=)
TW (1) TW200421465A (https=)

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Publication number Publication date
KR20040079331A (ko) 2004-09-14
KR100783845B1 (ko) 2007-12-10
KR20070075383A (ko) 2007-07-18
JP2004273764A (ja) 2004-09-30
KR100785534B1 (ko) 2007-12-12
TWI312172B (https=) 2009-07-11
TW200421465A (en) 2004-10-16

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