TW200420446A - Etching solution for multiple layer of copper and molybdenum and etching method using the same - Google Patents

Etching solution for multiple layer of copper and molybdenum and etching method using the same

Info

Publication number
TW200420446A
TW200420446A TW092135026A TW92135026A TW200420446A TW 200420446 A TW200420446 A TW 200420446A TW 092135026 A TW092135026 A TW 092135026A TW 92135026 A TW92135026 A TW 92135026A TW 200420446 A TW200420446 A TW 200420446A
Authority
TW
Taiwan
Prior art keywords
weight
copper
molybdenum
multiple layer
etching solution
Prior art date
Application number
TW092135026A
Other languages
English (en)
Other versions
TWI231275B (en
Inventor
Seong-Su Kim
Yong-Suk Choi
Gee-Sung Chae
Gyoo-Chul Jo
Oh-Nam Kwon
Lee Kyoung-Mook
Hwang Yong-Sup
Lee Seung-Yong
Original Assignee
Lg Philips Lcd Co Ltd
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Philips Lcd Co Ltd, Dongwoo Fine Chem Co Ltd filed Critical Lg Philips Lcd Co Ltd
Publication of TW200420446A publication Critical patent/TW200420446A/zh
Application granted granted Critical
Publication of TWI231275B publication Critical patent/TWI231275B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW092135026A 2002-12-12 2003-12-11 Etching solution for multiple layer of copper and molybdenum and etching method using the same TWI231275B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20020079211 2002-12-12
KR10-2003-0082375A KR100505328B1 (ko) 2002-12-12 2003-11-19 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법

Publications (2)

Publication Number Publication Date
TW200420446A true TW200420446A (en) 2004-10-16
TWI231275B TWI231275B (en) 2005-04-21

Family

ID=36121889

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092135026A TWI231275B (en) 2002-12-12 2003-12-11 Etching solution for multiple layer of copper and molybdenum and etching method using the same

Country Status (5)

Country Link
US (2) US7416681B2 (zh)
JP (1) JP4448322B2 (zh)
KR (1) KR100505328B1 (zh)
CN (1) CN100494499C (zh)
TW (1) TWI231275B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495761B (zh) * 2008-11-07 2015-08-11 Samsung Display Co Ltd 蝕刻劑成分以及使用其製造金屬圖樣及薄膜電晶體陣列面板之方法
TWI510848B (zh) * 2010-08-02 2015-12-01 Dongwoo Fine Chem Co Ltd 蝕刻劑組成物、蝕刻銅系金屬層之方法及用以製造液晶顯示裝置用之陣列基板的方法
US9658506B2 (en) 2010-02-26 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Display device having an oxide semiconductor transistor

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* Cited by examiner, † Cited by third party
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KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
JP4655542B2 (ja) * 2004-08-19 2011-03-23 東ソー株式会社 エッチング用組成物を用いたエッチング方法
KR101064626B1 (ko) * 2004-10-14 2011-09-15 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 에칭 조성물
KR101247246B1 (ko) * 2004-10-14 2013-03-25 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 에칭 조성물
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154008B2 (ja) * 2004-11-10 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR100708970B1 (ko) * 2004-12-09 2007-04-18 주식회사 엘지화학 구리 몰리브덴 배선용 식각 용액 조성물
US7247579B2 (en) * 2004-12-23 2007-07-24 Lam Research Corporation Cleaning methods for silicon electrode assembly surface contamination removal
KR101199533B1 (ko) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
KR101154244B1 (ko) * 2005-06-28 2012-06-18 주식회사 동진쎄미켐 알루미늄, 몰리브덴, 인듐-틴-옥사이드를 식각하기 위한 식각액
KR101369864B1 (ko) 2005-08-12 2014-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조방법
JP5019821B2 (ja) * 2005-08-12 2012-09-05 株式会社半導体エネルギー研究所 半導体装置
CN100376721C (zh) * 2005-09-21 2008-03-26 中国海洋大学 用于钼的化学蚀刻溶液
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR101152139B1 (ko) 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
KR101353123B1 (ko) * 2005-12-09 2014-01-17 동우 화인켐 주식회사 금속막 식각용액
SG133443A1 (en) * 2005-12-27 2007-07-30 3M Innovative Properties Co Etchant formulations and uses thereof
KR101194646B1 (ko) 2005-12-30 2012-10-24 엘지디스플레이 주식회사 소프트몰드 제조방법
KR101292449B1 (ko) * 2006-03-30 2013-07-31 동우 화인켐 주식회사 구리계/몰리브덴계 다중막 또는 산화인듐막의 식각 조성물및 이를 이용한 금속막의 식각방법
KR100779948B1 (ko) * 2006-05-04 2007-11-28 주식회사 대우일렉트로닉스 유기 전계 발광 소자의 보조전극 형성방법
US8012883B2 (en) * 2006-08-29 2011-09-06 Rohm And Haas Electronic Materials Llc Stripping method
TWI378989B (en) * 2006-09-01 2012-12-11 Taiwan Tft Lcd Ass Etchant for patterning composite layer and method of fabricating thin film transistor using the same
KR101326128B1 (ko) 2006-09-29 2013-11-06 삼성디스플레이 주식회사 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법
KR20080030817A (ko) * 2006-10-02 2008-04-07 동우 화인켐 주식회사 Ｔｆｔ-ｌｃｄ의 금속배선 형성을 위한 통합 식각액 조성물
KR101347499B1 (ko) * 2006-11-21 2014-01-07 동우 화인켐 주식회사 액정표시장치용 ｔｆｔ 어레이 기판의 제조방법
KR101271839B1 (ko) * 2006-12-22 2013-06-07 다이세이 플라스 가부시끼가이샤 금속과 수지의 복합체와 그 복합체의 제조 방법
KR101373735B1 (ko) * 2007-02-22 2014-03-14 삼성디스플레이 주식회사 신호선의 제조 방법, 박막 트랜지스터 표시판 및 그의 제조방법
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KR101406573B1 (ko) * 2008-01-25 2014-06-11 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
KR101406671B1 (ko) * 2008-01-28 2014-06-11 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
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KR101621546B1 (ko) * 2009-11-17 2016-05-16 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조 방법
JP5794148B2 (ja) * 2009-12-25 2015-10-14 三菱瓦斯化学株式会社 エッチング液及びこれを用いた半導体装置の製造方法
TWI405874B (zh) 2010-02-15 2013-08-21 Mitsubishi Gas Chemical Co 具有銅層及鉬層之多層薄膜用蝕刻液
KR101825493B1 (ko) 2010-04-20 2018-02-06 삼성디스플레이 주식회사 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법
KR20110123025A (ko) * 2010-05-06 2011-11-14 삼성전자주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
JP5682624B2 (ja) * 2010-06-18 2015-03-11 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層構造膜用エッチング液
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KR101256276B1 (ko) * 2010-08-25 2013-04-18 플란제 에스이 다중막의 식각액 조성물 및 그 식각방법
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JP2013060634A (ja) * 2011-09-14 2013-04-04 Tosoh Corp エッチング液
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