TW200639241A - Composite for polishing copper wiring, method of polishing surface of semiconductor integrated circuit, and method of manufacturing copper wiring for semiconductor integrated circuit - Google Patents

Composite for polishing copper wiring, method of polishing surface of semiconductor integrated circuit, and method of manufacturing copper wiring for semiconductor integrated circuit

Info

Publication number
TW200639241A
TW200639241A TW094115253A TW94115253A TW200639241A TW 200639241 A TW200639241 A TW 200639241A TW 094115253 A TW094115253 A TW 094115253A TW 94115253 A TW94115253 A TW 94115253A TW 200639241 A TW200639241 A TW 200639241A
Authority
TW
Taiwan
Prior art keywords
acid
integrated circuit
semiconductor integrated
copper wiring
polishing
Prior art date
Application number
TW094115253A
Other languages
Chinese (zh)
Inventor
Katsuyuki Tsugita
Hiroyuki Kamiya
Original Assignee
Asahi Glass Co Ltd
Seimi Chem Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Seimi Chem Kk filed Critical Asahi Glass Co Ltd
Publication of TW200639241A publication Critical patent/TW200639241A/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

To provide a technology for realizing a very precise surface flatness when using copper for a metal for wiring. A composite for polishing contains a chemical compound which contains water and hydrogen peroxide and has a chemical construction expressed by a formula (1), at least one first chelating agent selected among a group of tatraric acid, malonic acid, malic acid, citric acid, maleic acid, and fumaric acid, and at least one second chelating agent selected from among a group of triethylenetetramine, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, and their derivatives. In the formula (1), R is a hydrogen atom, an alkyl group including 1 to 4 carbon atoms, an alkoxyl group including 1 to 4 carbon atoms, or a carboxylic acid group.
TW094115253A 2003-11-13 2005-05-11 Composite for polishing copper wiring, method of polishing surface of semiconductor integrated circuit, and method of manufacturing copper wiring for semiconductor integrated circuit TW200639241A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003384103A JP4464111B2 (en) 2003-11-13 2003-11-13 Copper wiring polishing composition, semiconductor integrated circuit surface polishing method, and semiconductor integrated circuit copper wiring manufacturing method

Publications (1)

Publication Number Publication Date
TW200639241A true TW200639241A (en) 2006-11-16

Family

ID=34692633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115253A TW200639241A (en) 2003-11-13 2005-05-11 Composite for polishing copper wiring, method of polishing surface of semiconductor integrated circuit, and method of manufacturing copper wiring for semiconductor integrated circuit

Country Status (2)

Country Link
JP (1) JP4464111B2 (en)
TW (1) TW200639241A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5412706B2 (en) * 2005-11-01 2014-02-12 日立化成株式会社 Polishing material and polishing method for copper film and insulating material film
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9633865B2 (en) * 2008-02-22 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-stain polishing composition
JP2016056254A (en) * 2014-09-08 2016-04-21 株式会社フジミインコーポレーテッド Polishing composition

Also Published As

Publication number Publication date
JP4464111B2 (en) 2010-05-19
JP2005150306A (en) 2005-06-09

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