SG69890G - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
SG69890G
SG69890G SG698/90A SG69890A SG69890G SG 69890 G SG69890 G SG 69890G SG 698/90 A SG698/90 A SG 698/90A SG 69890 A SG69890 A SG 69890A SG 69890 G SG69890 G SG 69890G
Authority
SG
Singapore
Prior art keywords
base
bipolar
implant
transistors
comprised
Prior art date
Application number
SG698/90A
Other languages
English (en)
Original Assignee
Stc Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stc Plc filed Critical Stc Plc
Publication of SG69890G publication Critical patent/SG69890G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Recrystallisation Techniques (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Noodles (AREA)
  • Thin Film Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
SG698/90A 1985-03-23 1990-08-23 Semiconductor devices SG69890G (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB858507624A GB8507624D0 (en) 1985-03-23 1985-03-23 Semiconductor devices

Publications (1)

Publication Number Publication Date
SG69890G true SG69890G (en) 1990-11-23

Family

ID=10576545

Family Applications (1)

Application Number Title Priority Date Filing Date
SG698/90A SG69890G (en) 1985-03-23 1990-08-23 Semiconductor devices

Country Status (11)

Country Link
US (3) US4914048A (ja)
EP (2) EP0234054B1 (ja)
JP (2) JPH0799764B2 (ja)
KR (2) KR920006752B1 (ja)
CN (2) CN1004593B (ja)
AT (2) ATE57586T1 (ja)
DE (2) DE3675010D1 (ja)
GB (3) GB8507624D0 (ja)
NO (1) NO173478C (ja)
PH (1) PH26112A (ja)
SG (1) SG69890G (ja)

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GB2188479B (en) * 1986-03-26 1990-05-23 Stc Plc Semiconductor devices
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EP0316104A3 (en) * 1987-11-03 1991-01-30 Stc Plc Integrated circuits comprising resistors and bipolar transistors
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US5124817A (en) * 1988-01-19 1992-06-23 National Semiconductor Corporation Polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide
FR2626406B1 (fr) * 1988-01-22 1992-01-24 France Etat Transistor bipolaire compatible avec la technologie mos
GB2214870B (en) * 1988-02-20 1991-09-11 Stc Plc Plasma etching process
DE3914910C2 (de) * 1988-05-10 1999-11-25 Northern Telecom Ltd Verfahren zur Herstellung einer integrierten Schaltung
GB8810973D0 (en) * 1988-05-10 1988-06-15 Stc Plc Improvements in integrated circuits
US5091760A (en) * 1989-04-14 1992-02-25 Kabushiki Kaisha Toshiba Semiconductor device
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US5028973A (en) * 1989-06-19 1991-07-02 Harris Corporation Bipolar transistor with high efficient emitter
US5177582A (en) * 1989-09-22 1993-01-05 Siemens Aktiengesellschaft CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same
US4983531A (en) * 1990-02-12 1991-01-08 Motorola, Inc. Method of fabricating a single polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors
US4987089A (en) * 1990-07-23 1991-01-22 Micron Technology, Inc. BiCMOS process and process for forming bipolar transistors on wafers also containing FETs
JP2842682B2 (ja) * 1990-11-08 1999-01-06 シャープ株式会社 半導体装置の製造方法
US5158900A (en) * 1991-10-18 1992-10-27 Hewlett-Packard Company Method of separately fabricating a base/emitter structure of a BiCMOS device
WO1993016494A1 (en) * 1992-01-31 1993-08-19 Analog Devices, Inc. Complementary bipolar polysilicon emitter devices
JPH08172100A (ja) * 1994-12-16 1996-07-02 Mitsubishi Electric Corp 半導体装置
US5830789A (en) * 1996-11-19 1998-11-03 Integrated Device Technology, Inc. CMOS process forming wells after gate formation
KR100235628B1 (ko) * 1997-06-25 1999-12-15 김영환 반도체 소자의 제조방법
KR20040008485A (ko) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 반도체소자의 테스트 패턴 형성방법
JP2004311684A (ja) * 2003-04-07 2004-11-04 Sanyo Electric Co Ltd 半導体装置
TW200524139A (en) * 2003-12-24 2005-07-16 Renesas Tech Corp Voltage generating circuit and semiconductor integrated circuit

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Also Published As

Publication number Publication date
KR860007863A (ko) 1986-10-17
EP0196757A3 (en) 1987-05-27
CN1007389B (zh) 1990-03-28
GB8507624D0 (en) 1985-05-01
GB2174244B (en) 1989-07-05
CN1004593B (zh) 1989-06-21
GB8612801D0 (en) 1986-07-02
EP0196757A2 (en) 1986-10-08
CN86103793A (zh) 1987-04-08
DE3675010D1 (de) 1990-11-22
JPS61220453A (ja) 1986-09-30
US4914048A (en) 1990-04-03
ATE52877T1 (de) 1990-06-15
KR920006752B1 (ko) 1992-08-17
JPH0783024B2 (ja) 1995-09-06
GB2173638A (en) 1986-10-15
GB2173638B (en) 1989-06-28
CN86101789A (zh) 1986-11-19
PH26112A (en) 1992-02-06
KR860007746A (ko) 1986-10-17
NO860663L (no) 1986-09-24
NO173478C (no) 1993-12-15
EP0196757B1 (en) 1990-05-16
EP0234054B1 (en) 1990-10-17
US4845532A (en) 1989-07-04
GB2174244A (en) 1986-10-29
NO173478B (no) 1993-09-06
DE3671326D1 (de) 1990-06-21
JPH0799764B2 (ja) 1995-10-25
JPS6351673A (ja) 1988-03-04
GB8603322D0 (en) 1986-03-19
ATE57586T1 (de) 1990-11-15
EP0234054A1 (en) 1987-09-02
KR920010192B1 (ko) 1992-11-19
US4849364A (en) 1989-07-18

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