ATE52877T1 - Halbleiteranordnung mit einem bipolaren transistor und einem mos-transistor und verfahren zu deren herstellung. - Google Patents

Halbleiteranordnung mit einem bipolaren transistor und einem mos-transistor und verfahren zu deren herstellung.

Info

Publication number
ATE52877T1
ATE52877T1 AT86301052T AT86301052T ATE52877T1 AT E52877 T1 ATE52877 T1 AT E52877T1 AT 86301052 T AT86301052 T AT 86301052T AT 86301052 T AT86301052 T AT 86301052T AT E52877 T1 ATE52877 T1 AT E52877T1
Authority
AT
Austria
Prior art keywords
base
bipolar
implant
transistors
production
Prior art date
Application number
AT86301052T
Other languages
English (en)
Inventor
Peter Denis Scovell
Roger Leslie Baker
Peter Fred Blomley
Original Assignee
Stc Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stc Plc filed Critical Stc Plc
Application granted granted Critical
Publication of ATE52877T1 publication Critical patent/ATE52877T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Recrystallisation Techniques (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Noodles (AREA)
  • Thin Film Transistor (AREA)
AT86301052T 1985-03-23 1986-02-17 Halbleiteranordnung mit einem bipolaren transistor und einem mos-transistor und verfahren zu deren herstellung. ATE52877T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB858507624A GB8507624D0 (en) 1985-03-23 1985-03-23 Semiconductor devices
EP86301052A EP0196757B1 (de) 1985-03-23 1986-02-17 Halbleiteranordnung mit einem bipolaren Transistor und einem MOS-Transistor und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
ATE52877T1 true ATE52877T1 (de) 1990-06-15

Family

ID=10576545

Family Applications (2)

Application Number Title Priority Date Filing Date
AT86301052T ATE52877T1 (de) 1985-03-23 1986-02-17 Halbleiteranordnung mit einem bipolaren transistor und einem mos-transistor und verfahren zu deren herstellung.
AT86200948T ATE57586T1 (de) 1985-03-23 1986-02-17 Verfahren zur herstellung eines bipolartransistors.

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT86200948T ATE57586T1 (de) 1985-03-23 1986-02-17 Verfahren zur herstellung eines bipolartransistors.

Country Status (11)

Country Link
US (3) US4914048A (de)
EP (2) EP0234054B1 (de)
JP (2) JPH0799764B2 (de)
KR (2) KR920006752B1 (de)
CN (2) CN1004593B (de)
AT (2) ATE52877T1 (de)
DE (2) DE3671326D1 (de)
GB (3) GB8507624D0 (de)
NO (1) NO173478C (de)
PH (1) PH26112A (de)
SG (1) SG69890G (de)

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KR100235628B1 (ko) * 1997-06-25 1999-12-15 김영환 반도체 소자의 제조방법
KR20040008485A (ko) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 반도체소자의 테스트 패턴 형성방법
JP2004311684A (ja) * 2003-04-07 2004-11-04 Sanyo Electric Co Ltd 半導体装置
TW200524139A (en) * 2003-12-24 2005-07-16 Renesas Tech Corp Voltage generating circuit and semiconductor integrated circuit
WO2006117712A1 (en) * 2005-04-29 2006-11-09 Nxp B.V. Method of fabricating a bipolar transistor

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Also Published As

Publication number Publication date
JPH0799764B2 (ja) 1995-10-25
US4849364A (en) 1989-07-18
KR920010192B1 (ko) 1992-11-19
NO173478C (no) 1993-12-15
EP0196757A2 (de) 1986-10-08
CN86103793A (zh) 1987-04-08
NO173478B (no) 1993-09-06
KR860007746A (ko) 1986-10-17
EP0234054B1 (de) 1990-10-17
GB8612801D0 (en) 1986-07-02
GB2174244A (en) 1986-10-29
GB2174244B (en) 1989-07-05
KR920006752B1 (ko) 1992-08-17
US4845532A (en) 1989-07-04
CN1004593B (zh) 1989-06-21
DE3671326D1 (de) 1990-06-21
EP0196757B1 (de) 1990-05-16
EP0234054A1 (de) 1987-09-02
PH26112A (en) 1992-02-06
GB8603322D0 (en) 1986-03-19
KR860007863A (ko) 1986-10-17
ATE57586T1 (de) 1990-11-15
CN86101789A (zh) 1986-11-19
CN1007389B (zh) 1990-03-28
NO860663L (no) 1986-09-24
US4914048A (en) 1990-04-03
EP0196757A3 (en) 1987-05-27
JPH0783024B2 (ja) 1995-09-06
GB2173638A (en) 1986-10-15
GB2173638B (en) 1989-06-28
SG69890G (en) 1990-11-23
DE3675010D1 (de) 1990-11-22
JPS61220453A (ja) 1986-09-30
GB8507624D0 (en) 1985-05-01
JPS6351673A (ja) 1988-03-04

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