JPS6459850A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6459850A JPS6459850A JP62215115A JP21511587A JPS6459850A JP S6459850 A JPS6459850 A JP S6459850A JP 62215115 A JP62215115 A JP 62215115A JP 21511587 A JP21511587 A JP 21511587A JP S6459850 A JPS6459850 A JP S6459850A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- collector
- wiring part
- region
- type epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To prevent an influence by a parasitic MOS without expanding an area to be occupied by an element to be used such as a transistor or the like by a method wherein an upper part of a region surrounded by a region corresponding to a drain and a source of the parasitic MOS is covered with an electrode whose potential is identical to the region. CONSTITUTION:A source 7 and a drain 7' of a PMOS are formed; however, a collector wiring part 12 of an NPN transistor is formed and is taken out to an upper part in such a way that an Al wiring part is connected to an electrode 14 connected electrically to a collector contact 9; the electrode 14 connected to the collector contact 9 of the NPN transistor covers an upper part of an N-type epitaxial layer 3 in a collector region; this N-type epitaxial layer 3 and the electrode 14 are at an identical potential; accordingly, the surface of the N-type epitaxial layer 3 is not reversed electrically; even when a potential of the wiring part 12 other than a collector wiring part on the surface of a substrate 1 is selected arbitrarily, a parasitic MOS does not become an ON state; thereby a base layer 6 and an isolation layer 4 do not become a conductive state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215115A JPS6459850A (en) | 1987-08-31 | 1987-08-31 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215115A JPS6459850A (en) | 1987-08-31 | 1987-08-31 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459850A true JPS6459850A (en) | 1989-03-07 |
Family
ID=16667000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62215115A Pending JPS6459850A (en) | 1987-08-31 | 1987-08-31 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459850A (en) |
-
1987
- 1987-08-31 JP JP62215115A patent/JPS6459850A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840006872A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
KR830009653A (en) | Integrated circuit protection device | |
EP0952611A3 (en) | Semiconductor device | |
KR890011106A (en) | Integrated high-voltage bipolar power transistor and low-voltage MOS power transistor structure in the form of emitter switching and its manufacturing method | |
GB2173638B (en) | Semiconductor devices | |
GB1154805A (en) | Monolithic Semiconductor Microcircuits with Improved Means for Connecting Points of Common Potential | |
EP0292972A3 (en) | Ic with recombination layer and guard ring separating vdmos and cmos or the like | |
EP0314465A3 (en) | A semiconductor device having a vertical power mosfet fabricated in an isolated form on a semiconductor substrate | |
KR900013658A (en) | Bi-CMOS Semiconductor Device | |
IE822570L (en) | Semiconductor device and method of manufacturing the same | |
KR840008213A (en) | Semiconductor devices | |
JPS6459850A (en) | Semiconductor integrated circuit device | |
JPS57162360A (en) | Complementary insulated gate field effect semiconductor device | |
KR940008130A (en) | Semiconductor device and manufacturing method thereof | |
JPS648657A (en) | Supplementary semiconductor integrated circuit device | |
JPS56108255A (en) | Semiconductor integrated circuit | |
EP0111307A3 (en) | Semiconductor integrated circuit having a buried resistor | |
JPS5580350A (en) | Semiconductor integrated circuit | |
JPS5539688A (en) | Integrated circuit device of semiconductors | |
EP0422250A4 (en) | Semiconductor device and method of producing the same | |
GB1481184A (en) | Integrated circuits | |
JPS57162356A (en) | Integrated circuit device | |
EP0281032A3 (en) | Semiconductor device comprising a field effect transistor | |
KR850005159A (en) | Semiconductor integrated circuit with power supply passage to board | |
IE820679L (en) | Isolated integrated circuit comprising a substrate electrode |