JPS6459850A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6459850A
JPS6459850A JP62215115A JP21511587A JPS6459850A JP S6459850 A JPS6459850 A JP S6459850A JP 62215115 A JP62215115 A JP 62215115A JP 21511587 A JP21511587 A JP 21511587A JP S6459850 A JPS6459850 A JP S6459850A
Authority
JP
Japan
Prior art keywords
electrode
collector
wiring part
region
type epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62215115A
Other languages
Japanese (ja)
Inventor
Mamoru Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62215115A priority Critical patent/JPS6459850A/en
Publication of JPS6459850A publication Critical patent/JPS6459850A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent an influence by a parasitic MOS without expanding an area to be occupied by an element to be used such as a transistor or the like by a method wherein an upper part of a region surrounded by a region corresponding to a drain and a source of the parasitic MOS is covered with an electrode whose potential is identical to the region. CONSTITUTION:A source 7 and a drain 7' of a PMOS are formed; however, a collector wiring part 12 of an NPN transistor is formed and is taken out to an upper part in such a way that an Al wiring part is connected to an electrode 14 connected electrically to a collector contact 9; the electrode 14 connected to the collector contact 9 of the NPN transistor covers an upper part of an N-type epitaxial layer 3 in a collector region; this N-type epitaxial layer 3 and the electrode 14 are at an identical potential; accordingly, the surface of the N-type epitaxial layer 3 is not reversed electrically; even when a potential of the wiring part 12 other than a collector wiring part on the surface of a substrate 1 is selected arbitrarily, a parasitic MOS does not become an ON state; thereby a base layer 6 and an isolation layer 4 do not become a conductive state.
JP62215115A 1987-08-31 1987-08-31 Semiconductor integrated circuit device Pending JPS6459850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62215115A JPS6459850A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62215115A JPS6459850A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6459850A true JPS6459850A (en) 1989-03-07

Family

ID=16667000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62215115A Pending JPS6459850A (en) 1987-08-31 1987-08-31 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6459850A (en)

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