SG141446A1 - Isolation trenches for memory devices - Google Patents

Isolation trenches for memory devices

Info

Publication number
SG141446A1
SG141446A1 SG200802159-4A SG2008021594A SG141446A1 SG 141446 A1 SG141446 A1 SG 141446A1 SG 2008021594 A SG2008021594 A SG 2008021594A SG 141446 A1 SG141446 A1 SG 141446A1
Authority
SG
Singapore
Prior art keywords
memory devices
isolation trenches
dielectric
plug
substrate
Prior art date
Application number
SG200802159-4A
Other languages
English (en)
Inventor
Michael Violette
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG141446A1 publication Critical patent/SG141446A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
SG200802159-4A 2004-06-28 2005-06-22 Isolation trenches for memory devices SG141446A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/878,805 US7332408B2 (en) 2004-06-28 2004-06-28 Isolation trenches for memory devices

Publications (1)

Publication Number Publication Date
SG141446A1 true SG141446A1 (en) 2008-04-28

Family

ID=35169961

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200802159-4A SG141446A1 (en) 2004-06-28 2005-06-22 Isolation trenches for memory devices

Country Status (6)

Country Link
US (5) US7332408B2 (ja)
EP (1) EP1774586B1 (ja)
JP (1) JP4918695B2 (ja)
SG (1) SG141446A1 (ja)
TW (1) TWI316745B (ja)
WO (1) WO2006012163A1 (ja)

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Also Published As

Publication number Publication date
US20050285179A1 (en) 2005-12-29
JP4918695B2 (ja) 2012-04-18
EP1774586B1 (en) 2019-08-07
US7332408B2 (en) 2008-02-19
TW200608514A (en) 2006-03-01
US7892943B2 (en) 2011-02-22
US7332789B2 (en) 2008-02-19
US20110012186A1 (en) 2011-01-20
US20080128781A1 (en) 2008-06-05
TWI316745B (en) 2009-11-01
US20050287731A1 (en) 2005-12-29
WO2006012163A1 (en) 2006-02-02
EP1774586A1 (en) 2007-04-18
US20070063258A1 (en) 2007-03-22
US7439157B2 (en) 2008-10-21
US8049298B2 (en) 2011-11-01
JP2008504713A (ja) 2008-02-14

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