SG137686A1 - A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout - Google Patents

A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout

Info

Publication number
SG137686A1
SG137686A1 SG200403810-5A SG2004038105A SG137686A1 SG 137686 A1 SG137686 A1 SG 137686A1 SG 2004038105 A SG2004038105 A SG 2004038105A SG 137686 A1 SG137686 A1 SG 137686A1
Authority
SG
Singapore
Prior art keywords
opc
sigma
program product
pitch
critical
Prior art date
Application number
SG200403810-5A
Other languages
English (en)
Inventor
Duan-Fu Stephen Hsu
Armin Liebchen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG137686A1 publication Critical patent/SG137686A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG200403810-5A 2003-06-30 2004-06-30 A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout SG137686A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48310203P 2003-06-30 2003-06-30

Publications (1)

Publication Number Publication Date
SG137686A1 true SG137686A1 (en) 2007-12-28

Family

ID=33490761

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403810-5A SG137686A1 (en) 2003-06-30 2004-06-30 A method, program product and apparatus of simultaneous optimization for na-sigma exposure settings and scattering bars opc using a device layout

Country Status (7)

Country Link
US (1) US7355673B2 (zh)
EP (1) EP1500974A3 (zh)
JP (2) JP2005026701A (zh)
KR (2) KR101096143B1 (zh)
CN (1) CN1577099B (zh)
SG (1) SG137686A1 (zh)
TW (1) TWI345074B (zh)

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Also Published As

Publication number Publication date
JP2010146024A (ja) 2010-07-01
TW200525178A (en) 2005-08-01
KR20050002650A (ko) 2005-01-07
EP1500974A2 (en) 2005-01-26
CN1577099B (zh) 2010-05-05
KR101096143B1 (ko) 2011-12-19
CN1577099A (zh) 2005-02-09
US20050028129A1 (en) 2005-02-03
JP2005026701A (ja) 2005-01-27
KR101185463B1 (ko) 2012-10-02
US7355673B2 (en) 2008-04-08
KR20110133520A (ko) 2011-12-13
EP1500974A3 (en) 2006-04-12
TWI345074B (en) 2011-07-11

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