CN113031388A - 光学邻近效应修正中散射条的嵌入方法 - Google Patents
光学邻近效应修正中散射条的嵌入方法 Download PDFInfo
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- CN113031388A CN113031388A CN202110218077.6A CN202110218077A CN113031388A CN 113031388 A CN113031388 A CN 113031388A CN 202110218077 A CN202110218077 A CN 202110218077A CN 113031388 A CN113031388 A CN 113031388A
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- Prior art keywords
- scattering
- bars
- optical proximity
- bar
- length
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 238000012937 correction Methods 0.000 title claims abstract description 18
- 230000000694 effects Effects 0.000 title abstract description 7
- 238000012216 screening Methods 0.000 claims abstract description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004429 Calibre Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110218077.6A CN113031388A (zh) | 2021-02-26 | 2021-02-26 | 光学邻近效应修正中散射条的嵌入方法 |
Applications Claiming Priority (1)
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CN202110218077.6A CN113031388A (zh) | 2021-02-26 | 2021-02-26 | 光学邻近效应修正中散射条的嵌入方法 |
Publications (1)
Publication Number | Publication Date |
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CN113031388A true CN113031388A (zh) | 2021-06-25 |
Family
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Family Applications (1)
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CN202110218077.6A Pending CN113031388A (zh) | 2021-02-26 | 2021-02-26 | 光学邻近效应修正中散射条的嵌入方法 |
Country Status (1)
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CN (1) | CN113031388A (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020182523A1 (en) * | 2001-06-05 | 2002-12-05 | Beate Frankowsky | Method for carrying out a rule-based optical proximity correction with simultaneous scatter bar insertion |
CN1577099A (zh) * | 2003-06-30 | 2005-02-09 | Asml蒙片工具有限公司 | 对NA-σ曝光设置和散射条OPC同时优化的方法和装置 |
US20070166626A1 (en) * | 2006-01-17 | 2007-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Scattering bar OPC application method for mask ESD prevention |
US20090276750A1 (en) * | 2008-05-05 | 2009-11-05 | Promos Technologies Inc. | Method for establishing scattering bar rule |
KR20100079150A (ko) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | 픽셀형 스캐터링 바를 이용한 opc보정 방법 |
CN102508962A (zh) * | 2011-11-02 | 2012-06-20 | 浙江大学 | 用矢量化参数确定规则插入散射条配方的方法 |
CN105093809A (zh) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 增强光刻工艺窗口的光学邻近修正方法 |
CN109901357A (zh) * | 2017-12-08 | 2019-06-18 | 中芯国际集成电路制造(上海)有限公司 | 光刻板及掩模修正方法 |
-
2021
- 2021-02-26 CN CN202110218077.6A patent/CN113031388A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020182523A1 (en) * | 2001-06-05 | 2002-12-05 | Beate Frankowsky | Method for carrying out a rule-based optical proximity correction with simultaneous scatter bar insertion |
CN1577099A (zh) * | 2003-06-30 | 2005-02-09 | Asml蒙片工具有限公司 | 对NA-σ曝光设置和散射条OPC同时优化的方法和装置 |
US20070166626A1 (en) * | 2006-01-17 | 2007-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Scattering bar OPC application method for mask ESD prevention |
US20090276750A1 (en) * | 2008-05-05 | 2009-11-05 | Promos Technologies Inc. | Method for establishing scattering bar rule |
KR20100079150A (ko) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | 픽셀형 스캐터링 바를 이용한 opc보정 방법 |
CN102508962A (zh) * | 2011-11-02 | 2012-06-20 | 浙江大学 | 用矢量化参数确定规则插入散射条配方的方法 |
CN105093809A (zh) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 增强光刻工艺窗口的光学邻近修正方法 |
CN109901357A (zh) * | 2017-12-08 | 2019-06-18 | 中芯国际集成电路制造(上海)有限公司 | 光刻板及掩模修正方法 |
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Effective date of registration: 20220819 Address after: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant after: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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Effective date of registration: 20240801 Address after: Room 710, Jianshe Building, 348 Kaifa Avenue, Huangpu District, Guangzhou City, Guangdong Province 510730 Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Country or region after: China Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Country or region before: China Applicant before: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. |