DE602005018082D1 - Beleuchtungsapparat, Methode zur Justierung des Beleuchtungsapparats, Belichtungssystem und Belichtungsverfahren - Google Patents
Beleuchtungsapparat, Methode zur Justierung des Beleuchtungsapparats, Belichtungssystem und BelichtungsverfahrenInfo
- Publication number
- DE602005018082D1 DE602005018082D1 DE602005018082T DE602005018082T DE602005018082D1 DE 602005018082 D1 DE602005018082 D1 DE 602005018082D1 DE 602005018082 T DE602005018082 T DE 602005018082T DE 602005018082 T DE602005018082 T DE 602005018082T DE 602005018082 D1 DE602005018082 D1 DE 602005018082D1
- Authority
- DE
- Germany
- Prior art keywords
- distribution
- illuminated
- pupil
- illumination apparatus
- adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
- G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Light Sources And Details Of Projection-Printing Devices (AREA)
- Studio Devices (AREA)
- Exposure Control For Cameras (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004236913A JP4599936B2 (ja) | 2004-08-17 | 2004-08-17 | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
PCT/JP2005/014166 WO2006018972A1 (ja) | 2004-08-17 | 2005-08-03 | 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005018082D1 true DE602005018082D1 (de) | 2010-01-14 |
Family
ID=35907362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005018082T Active DE602005018082D1 (de) | 2004-08-17 | 2005-08-03 | Beleuchtungsapparat, Methode zur Justierung des Beleuchtungsapparats, Belichtungssystem und Belichtungsverfahren |
Country Status (11)
Country | Link |
---|---|
US (1) | US9235133B2 (de) |
EP (1) | EP1798758B2 (de) |
JP (1) | JP4599936B2 (de) |
KR (2) | KR101285056B1 (de) |
CN (1) | CN100539018C (de) |
AT (1) | ATE450886T1 (de) |
DE (1) | DE602005018082D1 (de) |
HK (1) | HK1106064A1 (de) |
IL (1) | IL181344A (de) |
TW (2) | TWI493276B (de) |
WO (1) | WO2006018972A1 (de) |
Families Citing this family (52)
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EP3226073A3 (de) * | 2003-04-09 | 2017-10-11 | Nikon Corporation | Belichtungsverfahren und -vorrichtung sowie verfahren zur herstellung der vorrichtung |
TWI609409B (zh) | 2003-10-28 | 2017-12-21 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
TWI512335B (zh) * | 2003-11-20 | 2015-12-11 | 尼康股份有限公司 | 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法 |
TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
TWI614795B (zh) | 2004-02-06 | 2018-02-11 | Nikon Corporation | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
TW200923418A (en) * | 2005-01-21 | 2009-06-01 | Nikon Corp | Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP3232270A3 (de) | 2005-05-12 | 2017-12-13 | Nikon Corporation | Optisches projektionssystem, belichtungsvorrichtung und belichtungsverfahren |
WO2008092653A2 (en) | 2007-01-30 | 2008-08-07 | Carl Zeiss Smt Ag | Illumination system of a microlithographic projection exposure apparatus |
US7714984B2 (en) * | 2007-03-28 | 2010-05-11 | Asml Holding N.V. | Residual pupil asymmetry compensator for a lithography scanner |
US8451427B2 (en) * | 2007-09-14 | 2013-05-28 | Nikon Corporation | Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method |
JP5267029B2 (ja) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | 照明光学装置、露光装置及びデバイスの製造方法 |
CN101681123B (zh) | 2007-10-16 | 2013-06-12 | 株式会社尼康 | 照明光学系统、曝光装置以及元件制造方法 |
KR101546987B1 (ko) | 2007-10-16 | 2015-08-24 | 가부시키가이샤 니콘 | 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법 |
US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
JP2010004008A (ja) * | 2007-10-31 | 2010-01-07 | Nikon Corp | 光学ユニット、照明光学装置、露光装置、露光方法、およびデバイス製造方法 |
US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
DE102008007449A1 (de) | 2008-02-01 | 2009-08-13 | Carl Zeiss Smt Ag | Beleuchtungsoptik zur Beleuchtung eines Objektfeldes einer Projektionsbelichtungsanlage für die Mikrolithographie |
US8908151B2 (en) * | 2008-02-14 | 2014-12-09 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system |
US20090257043A1 (en) * | 2008-04-14 | 2009-10-15 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system |
JP5360057B2 (ja) | 2008-05-28 | 2013-12-04 | 株式会社ニコン | 空間光変調器の検査装置および検査方法、照明光学系、照明光学系の調整方法、露光装置、およびデバイス製造方法 |
EP2310914B1 (de) * | 2008-06-30 | 2018-12-26 | Corning Incorporated | Telezentrizitätskorrektor für mikrolithografisches projektionssystem |
DE102009025362A1 (de) | 2008-08-01 | 2010-02-04 | Carl Zeiss Smt Ag | Variabel einstellbare Streuscheibe für Projektionsbelichtungsanlage |
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JP5391641B2 (ja) * | 2008-10-20 | 2014-01-15 | 株式会社ニコン | フィルタ装置、照明装置、露光装置、及びデバイス製造方法 |
JP5365641B2 (ja) * | 2008-12-24 | 2013-12-11 | 株式会社ニコン | 照明光学系、露光装置及びデバイスの製造方法 |
KR101960153B1 (ko) | 2008-12-24 | 2019-03-19 | 가부시키가이샤 니콘 | 조명 광학계, 노광 장치 및 디바이스의 제조 방법 |
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JP4135471B2 (ja) | 2002-10-31 | 2008-08-20 | Dic株式会社 | エポキシ樹脂組成物およびその硬化物 |
EP1429190B1 (de) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Belichtungsapparat und -verfahren |
JP2004266259A (ja) * | 2003-02-10 | 2004-09-24 | Nikon Corp | 照明光学装置、露光装置および露光方法 |
EP3226073A3 (de) * | 2003-04-09 | 2017-10-11 | Nikon Corporation | Belichtungsverfahren und -vorrichtung sowie verfahren zur herstellung der vorrichtung |
KR101516142B1 (ko) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US7348575B2 (en) * | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
TWI387855B (zh) | 2003-11-13 | 2013-03-01 | 尼康股份有限公司 | A variable slit device, a lighting device, an exposure device, an exposure method, and an element manufacturing method |
KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
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KR101199076B1 (ko) | 2004-06-04 | 2012-11-07 | 칼 짜이스 에스엠티 게엠베하 | 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소 |
US7283209B2 (en) * | 2004-07-09 | 2007-10-16 | Carl Zeiss Smt Ag | Illumination system for microlithography |
DE102004063314A1 (de) * | 2004-12-23 | 2006-07-13 | Carl Zeiss Smt Ag | Filtereinrichtung für die Kompensation einer asymmetrischen Pupillenausleuchtung |
WO2008092653A2 (en) | 2007-01-30 | 2008-08-07 | Carl Zeiss Smt Ag | Illumination system of a microlithographic projection exposure apparatus |
US7843549B2 (en) | 2007-05-23 | 2010-11-30 | Asml Holding N.V. | Light attenuating filter for correcting field dependent ellipticity and uniformity |
-
2004
- 2004-08-17 JP JP2004236913A patent/JP4599936B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-03 WO PCT/JP2005/014166 patent/WO2006018972A1/ja active Application Filing
- 2005-08-03 US US11/660,387 patent/US9235133B2/en active Active
- 2005-08-03 AT AT05768370T patent/ATE450886T1/de not_active IP Right Cessation
- 2005-08-03 EP EP05768370.8A patent/EP1798758B2/de not_active Not-in-force
- 2005-08-03 KR KR1020127022531A patent/KR101285056B1/ko active IP Right Grant
- 2005-08-03 DE DE602005018082T patent/DE602005018082D1/de active Active
- 2005-08-03 KR KR1020077003972A patent/KR101251214B1/ko active IP Right Grant
- 2005-08-03 CN CNB2005800276769A patent/CN100539018C/zh active Active
- 2005-08-10 TW TW101128475A patent/TWI493276B/zh not_active IP Right Cessation
- 2005-08-10 TW TW094127123A patent/TWI390331B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
EP1798758A1 (de) | 2007-06-20 |
WO2006018972A1 (ja) | 2006-02-23 |
CN101006552A (zh) | 2007-07-25 |
JP4599936B2 (ja) | 2010-12-15 |
KR20120101599A (ko) | 2012-09-13 |
HK1106064A1 (en) | 2008-02-29 |
TW200609656A (en) | 2006-03-16 |
TWI493276B (zh) | 2015-07-21 |
ATE450886T1 (de) | 2009-12-15 |
EP1798758A4 (de) | 2008-06-25 |
KR20070041582A (ko) | 2007-04-18 |
TW201300936A (zh) | 2013-01-01 |
IL181344A0 (en) | 2007-07-04 |
KR101285056B1 (ko) | 2013-07-10 |
CN100539018C (zh) | 2009-09-09 |
KR101251214B1 (ko) | 2013-04-08 |
TWI390331B (zh) | 2013-03-21 |
US20080030707A1 (en) | 2008-02-07 |
US9235133B2 (en) | 2016-01-12 |
EP1798758B2 (de) | 2019-03-13 |
JP2006059834A (ja) | 2006-03-02 |
EP1798758B1 (de) | 2009-12-02 |
IL181344A (en) | 2015-07-30 |
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