SG112099A1 - Method for cleaning deposition chambers for high dielectric constant materials - Google Patents

Method for cleaning deposition chambers for high dielectric constant materials

Info

Publication number
SG112099A1
SG112099A1 SG200407211A SG200407211A SG112099A1 SG 112099 A1 SG112099 A1 SG 112099A1 SG 200407211 A SG200407211 A SG 200407211A SG 200407211 A SG200407211 A SG 200407211A SG 112099 A1 SG112099 A1 SG 112099A1
Authority
SG
Singapore
Prior art keywords
dielectric constant
high dielectric
deposition chambers
constant materials
cleaning deposition
Prior art date
Application number
SG200407211A
Other languages
English (en)
Inventor
Wu Dingjun
Ji Bing
Andrew Motika Stephen
Joseph Karwacki Eugene Jr
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG112099A1 publication Critical patent/SG112099A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Detergent Compositions (AREA)
  • Formation Of Insulating Films (AREA)
SG200407211A 2003-11-25 2004-11-18 Method for cleaning deposition chambers for high dielectric constant materials SG112099A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/721,719 US7055263B2 (en) 2003-11-25 2003-11-25 Method for cleaning deposition chambers for high dielectric constant materials

Publications (1)

Publication Number Publication Date
SG112099A1 true SG112099A1 (en) 2005-06-29

Family

ID=34465673

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200407211A SG112099A1 (en) 2003-11-25 2004-11-18 Method for cleaning deposition chambers for high dielectric constant materials

Country Status (7)

Country Link
US (1) US7055263B2 (ko)
EP (1) EP1536035A3 (ko)
JP (2) JP2005159364A (ko)
KR (1) KR100644176B1 (ko)
CN (1) CN100347815C (ko)
SG (1) SG112099A1 (ko)
TW (1) TWI255862B (ko)

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