SG11202002853TA - Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device - Google Patents
Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202002853TA SG11202002853TA SG11202002853TA SG11202002853TA SG11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- reflective
- substrate
- semiconductor device
- manufacturing semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017201189 | 2017-10-17 | ||
| PCT/JP2018/038501 WO2019078206A1 (ja) | 2017-10-17 | 2018-10-16 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202002853TA true SG11202002853TA (en) | 2020-05-28 |
Family
ID=66174168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202002853TA SG11202002853TA (en) | 2017-10-17 | 2018-10-16 | Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US11262647B2 (https=) |
| JP (3) | JP7286544B2 (https=) |
| KR (2) | KR102937794B1 (https=) |
| SG (1) | SG11202002853TA (https=) |
| TW (3) | TWI889453B (https=) |
| WO (1) | WO2019078206A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019078206A1 (ja) | 2017-10-17 | 2019-04-25 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| TWI811369B (zh) | 2018-05-25 | 2023-08-11 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法 |
| WO2020235612A1 (ja) * | 2019-05-21 | 2020-11-26 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP7610346B2 (ja) * | 2019-11-01 | 2025-01-08 | テクセンドフォトマスク株式会社 | 反射型マスク及び反射型マスクの製造方法 |
| CN111290224B (zh) * | 2020-02-20 | 2023-04-07 | 上海华力微电子有限公司 | 一种单元标记及其设计方法 |
| JP7318607B2 (ja) * | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
| TW202246879A (zh) * | 2021-02-09 | 2022-12-01 | 美商應用材料股份有限公司 | 極紫外光遮罩毛胚結構 |
| US11782337B2 (en) * | 2021-09-09 | 2023-10-10 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
| JP2025036222A (ja) | 2023-08-31 | 2025-03-14 | Hoya株式会社 | 多層反射膜付き基板、マスクブランク、転写用マスク及び転写用マスクの製造方法 |
| KR20250179074A (ko) * | 2024-06-20 | 2025-12-29 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반사형 마스크 블랭크 및 그 제조 방법, 및 반사형 마스크 블랭크 관련 기판의 검사 방법 |
| US20260044067A1 (en) * | 2024-08-09 | 2026-02-12 | Shin-Etsu Chemical Co., Ltd. | Reflective mask blank and method for manufacturing the same |
| WO2026042468A1 (ja) * | 2024-08-22 | 2026-02-26 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
| WO2026058621A1 (ja) * | 2024-09-13 | 2026-03-19 | Ａｇｃ株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH021901A (ja) * | 1988-06-09 | 1990-01-08 | Fujitsu Ltd | 位置合わせマークの形成方法 |
| JP3219502B2 (ja) | 1992-12-01 | 2001-10-15 | キヤノン株式会社 | 反射型マスクとその製造方法、並びに露光装置と半導体デバイス製造方法 |
| US6830851B2 (en) * | 2001-06-30 | 2004-12-14 | Intel Corporation | Photolithographic mask fabrication |
| US6756158B2 (en) * | 2001-06-30 | 2004-06-29 | Intel Corporation | Thermal generation of mask pattern |
| JP2005317617A (ja) * | 2004-04-27 | 2005-11-10 | Nikon Corp | 位置検出用マーク及びそれを備えたレチクル又は感光性基板、位置検出方法、マーク評価方法、及びマーク検出方法とマーク検出装置、並びに露光方法と露光装置 |
| US8399160B2 (en) * | 2008-11-27 | 2013-03-19 | Hoya Corporation | Multilayer reflective film coated substrate, reflective mask blank, and method of manufacturing a reflective mask |
| JP2010219445A (ja) | 2009-03-18 | 2010-09-30 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置 |
| JP5910625B2 (ja) * | 2011-03-07 | 2016-04-27 | 旭硝子株式会社 | 多層基板、多層基板の製造方法、多層基板の品質管理方法 |
| WO2013031863A1 (ja) | 2011-09-01 | 2013-03-07 | 旭硝子株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法 |
| JP6460619B2 (ja) | 2012-03-12 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| JP2013222811A (ja) | 2012-04-16 | 2013-10-28 | Lasertec Corp | Ｅｕｖマスクブランクス、マスクの製造方法、及びアライメント方法 |
| KR20150058254A (ko) * | 2012-09-28 | 2015-05-28 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법, 그리고 euv 리소그래피용 반사형 마스크 및 그 제조 방법 |
| WO2015146140A1 (ja) * | 2014-03-24 | 2015-10-01 | 凸版印刷株式会社 | Ｅｕｖマスクの位相欠陥評価方法、ｅｕｖマスクの製造方法、ｅｕｖマスクブランク及びｅｕｖマスク |
| JP6713251B2 (ja) * | 2015-03-30 | 2020-06-24 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法 |
| JP6586934B2 (ja) | 2015-09-17 | 2019-10-09 | Ａｇｃ株式会社 | 反射型マスクブランク、及び反射型マスクブランクの製造方法 |
| JP2017075997A (ja) * | 2015-10-13 | 2017-04-20 | 旭硝子株式会社 | 反射型マスクブランク、及び反射型マスクブランクの製造方法 |
| WO2019078206A1 (ja) | 2017-10-17 | 2019-04-25 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| WO2022004201A1 (en) | 2020-06-30 | 2022-01-06 | Aoyama Seisakusho Co., Ltd. | Piercing nut and method for fixing the same to inner surface of mating member having closed sectional shape |
-
2018
- 2018-10-16 WO PCT/JP2018/038501 patent/WO2019078206A1/ja not_active Ceased
- 2018-10-16 SG SG11202002853TA patent/SG11202002853TA/en unknown
- 2018-10-16 JP JP2019549295A patent/JP7286544B2/ja active Active
- 2018-10-16 KR KR1020257009101A patent/KR102937794B1/ko active Active
- 2018-10-16 US US16/756,727 patent/US11262647B2/en active Active
- 2018-10-16 KR KR1020207007408A patent/KR102785832B1/ko active Active
- 2018-10-17 TW TW113126233A patent/TWI889453B/zh active
- 2018-10-17 TW TW114120942A patent/TW202536526A/zh unknown
- 2018-10-17 TW TW107136501A patent/TWI851543B/zh active
-
2022
- 2022-01-21 US US17/581,590 patent/US11681214B2/en active Active
-
2023
- 2023-05-02 US US18/142,223 patent/US12025911B2/en active Active
- 2023-05-24 JP JP2023085233A patent/JP7500828B2/ja active Active
-
2024
- 2024-06-05 JP JP2024091133A patent/JP7688763B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7500828B2 (ja) | 2024-06-17 |
| KR102937794B1 (ko) | 2026-03-12 |
| JP2023104997A (ja) | 2023-07-28 |
| US11262647B2 (en) | 2022-03-01 |
| KR20250046343A (ko) | 2025-04-02 |
| KR102785832B1 (ko) | 2025-03-26 |
| JPWO2019078206A1 (ja) | 2020-11-05 |
| TWI851543B (zh) | 2024-08-11 |
| TW201928503A (zh) | 2019-07-16 |
| US12025911B2 (en) | 2024-07-02 |
| JP2024114710A (ja) | 2024-08-23 |
| WO2019078206A8 (ja) | 2020-02-20 |
| US20230266658A1 (en) | 2023-08-24 |
| US11681214B2 (en) | 2023-06-20 |
| JP7688763B2 (ja) | 2025-06-04 |
| TW202536526A (zh) | 2025-09-16 |
| TWI889453B (zh) | 2025-07-01 |
| US20220146925A1 (en) | 2022-05-12 |
| TW202447325A (zh) | 2024-12-01 |
| WO2019078206A1 (ja) | 2019-04-25 |
| US20200249558A1 (en) | 2020-08-06 |
| JP7286544B2 (ja) | 2023-06-05 |
| KR20200064065A (ko) | 2020-06-05 |
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