WO2013031863A1 - 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法 - Google Patents
反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法 Download PDFInfo
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- WO2013031863A1 WO2013031863A1 PCT/JP2012/071905 JP2012071905W WO2013031863A1 WO 2013031863 A1 WO2013031863 A1 WO 2013031863A1 JP 2012071905 W JP2012071905 W JP 2012071905W WO 2013031863 A1 WO2013031863 A1 WO 2013031863A1
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- reference mark
- layer
- multilayer film
- reflective
- mask blank
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
Definitions
- the present invention relates to a reflective mask blank, a reflective mask blank manufacturing method, and a reflective mask blank quality control method.
- EUV exposure technology is promising in place of ArF exposure technology using ArF excimer laser light having a wavelength of 193 nm.
- EUV Extreme Ultra-Violet
- the EUV light includes soft X-rays and vacuum ultraviolet light, specifically, light having a wavelength of about 0.2 to 100 nm.
- EUV light having a wavelength of about 13.5 nm is mainly studied as exposure light.
- a reflective photomask is used in the EUV exposure (EUVL) technology.
- This reflective photomask is formed by forming a reflective multilayer film and an absorption layer in this order on a substrate and removing a part of the absorption layer.
- the absorption layer is formed in a predetermined pattern.
- the EUV light incident on the reflection type photomask is absorbed in a portion having the absorption layer, reflected in the reflection multilayer film in a portion without the absorption layer, and imaged on the surface of the exposure material by the optical system. In this way, the pattern of the absorption layer is transferred to the surface of the exposure material.
- the reflective multilayer film has a periodic structure in which a plurality of types of layers having different refractive indexes are repeatedly stacked on a substrate in a predetermined order.
- the reflective multilayer film is formed by alternately and repeatedly stacking a Mo layer as a low refractive index layer and a Si layer as a high refractive index layer.
- Non-Patent Document 2 a technique for adjusting the position and direction of the pattern of the absorption layer in accordance with the position of the defect in the reflective multilayer film has been studied (for example, see Non-Patent Document 2).
- Patent Document 2 when an absorption layer is formed on a reflective multilayer film, a reference mark is formed on the absorption layer, and no reference mark is formed on the substrate and the reflective multilayer film.
- the position of the defect in the reflective multilayer film is specified with the position of the reference mark as the reference position. Since the conventional fiducial mark has insufficient reproducibility of the detection position by the inspection light, it is difficult to accurately identify the position of the defect with the fiducial mark position as the fiducial position.
- the present invention has been made in view of the above-described problems, and is a reflective mask blank capable of accurately identifying the position of a blank defect, particularly a reflective multilayer film defect, a reflective mask blank manufacturing method, and a reflective mold.
- the object is to provide a quality control method for mask blanks.
- a reflective mask blank provides: In a reflective mask blank having a substrate, a reflective multilayer film that reflects exposure light, and an absorption layer that absorbs the exposure light in this order, The surface of the reflective multilayer film or the surface of one layer formed between the reflective multilayer film and the absorption layer is formed in a concave or convex shape, and further has a reference mark indicating the reference position of the reflective multilayer film. And The reference mark is formed so that the reflectance with respect to light of a predetermined wavelength is different from the periphery of the reference mark, and is transferred to a layer formed on the reference mark.
- the manufacturing method of the reflective mask blank according to another aspect of the present invention is as follows.
- a method for manufacturing a reflective mask blank having a substrate, a reflective multilayer film that reflects exposure light, and an absorption layer that absorbs the exposure light in this order Forming a concave or convex reference mark indicating a reference position of the reflective multilayer film on the surface of the reflective multilayer film or on the surface of one layer formed between the reflective multilayer film and the absorbing layer;
- Have The reference mark is formed so that the reflectance with respect to light of a predetermined wavelength is different from the periphery of the reference mark, and is transferred to a layer formed on the reference mark.
- a quality control method for a reflective mask blank includes: A quality control method for a reflective mask blank according to one aspect of the above, After forming the reflective multilayer film and before forming the absorbing layer, the method includes a step of identifying the position of the defect in the reflective multilayer film using the position of the reference mark as a reference position.
- a reflective mask blank capable of accurately identifying the position of a defect in the reflective multilayer film.
- FIG. 1 is a sectional view of a reflective mask blank according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an example of a reflective photomask obtained by removing a part of the absorption layer of the reflective mask blank.
- FIG. 3 is a plan view of an example of a temporary reference mark formed on the substrate and the surface of the substrate.
- FIG. 4 is a plan view of an example of a reference mark formed on the surface of a layer formed between the reflective multilayer film and the absorption layer.
- FIG. 5 is a diagram showing the relationship between the EUV light reflectance and the number of Mo / Si pairs in a Mo / Si reflective multilayer film.
- FIG. 6 is a diagram showing the relationship between light reflectance and light wavelength in a Mo / Si reflective multilayer film.
- FIG. 7 is a diagram showing the relationship between the light reflectance and the number of Mo / Si pairs in the Mo / Si reflective multilayer film.
- FIG. 8 is a comparison diagram showing an example of a cross-sectional profile of a reference mark transferred onto a reflective mask blank and a conventional example.
- FIG. 9 is a sectional view of a reflective mask blank according to the second embodiment of the present invention.
- FIG. 10 is a flowchart of a method of manufacturing a reflective mask blank according to the third embodiment of the present invention.
- FIG. 11 is a flowchart of a quality control method for a reflective mask blank according to the fourth embodiment of the present invention.
- a reflective mask blank for EUVL will be described.
- the present invention can be applied to a reflective mask blank that uses light having a wavelength other than EUV light as exposure light.
- FIG. 1 is a sectional view of a reflective mask blank according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view of an example of a reflective photomask obtained by removing a part of the absorption layer of the reflective mask blank.
- the reflective mask blank 10 includes a reflective multilayer film 31 that reflects EUV light, a protective layer 32 that protects the reflective multilayer film 31, a buffer layer 33 for pattern processing, and an absorption layer 34 that absorbs EUV light on the substrate 20. , And a low reflection layer 35 having a lower reflectance to the inspection light than the absorption layer 34 is formed in this order.
- the protective layer 32, the buffer layer 33, and the low reflection layer 35 are arbitrary structures, and do not need to be.
- the reflective mask blank 10 may have another functional layer.
- the reflective mask blank 10 is patterned into a reflective photomask 100 in accordance with a general mask manufacturing process. For example, a resist film is applied on the surface of the reflective mask blank 10, heated, and then drawn with an electron beam or ultraviolet rays. At this time, the position and orientation of the drawing pattern are adjusted according to the position of the defect in the reflective multilayer film 31 and the like. Subsequently, unnecessary portions of the absorption layer 34 and the low reflection layer 35 and the resist are removed by development / etching to obtain the reflective photomask 100.
- the reflective photomask 100 has a low reflection layer 35 and an absorption layer 134 formed by patterning the low reflection layer 35 and the absorption layer 34 shown in FIG.
- the EUV light applied to the reflective photomask 100 is absorbed in a portion where the absorption layer 134 is present, and is reflected by the reflective multilayer film 31 in a portion where the absorption layer 134 is absent, and is imaged on the surface of the exposure material by an optical system or the like.
- the In this way, the pattern of the absorption layer 134 is transferred to the surface of the exposure material.
- the substrate 20 is for forming the reflective multilayer film 31 and the like.
- RMS Root Mean Square representing the surface roughness of the substrate 20 is, for example, 0.15 nm or less, and the flatness of the substrate 20 is, for example, 100 nm or less.
- the thermal expansion coefficient of the substrate 20 is, for example, 0 ⁇ 0.05 ⁇ 10 ⁇ 7 / ° C., preferably 0 ⁇ 0.03 ⁇ 10 ⁇ 7 / ° C.
- the substrate 20 is preferably made of glass having excellent chemical resistance and heat resistance and a small coefficient of thermal expansion.
- glass for example, quartz glass mainly composed of SiO 2 is used. Quartz glass may contain TiO 2 . The content of TiO 2 is, for example, 1 to 12% by mass.
- the substrate 20 may be made of silicon or metal other than glass.
- a conductive layer 22 for electrostatic attraction is formed on the back surface 21 of the substrate 20.
- the electric conductivity and thickness of the constituent material are selected so that the conductive layer 22 has a sheet resistance of 100 ⁇ / ⁇ or less.
- a constituent material of the conductive layer 22 for example, Si, TiN, Mo, Cr, CrN, CrO, TaSi or the like is used. Among these, a CrN film that is excellent in adhesion to the chuck surface since the surface roughness of the surface of the conductive layer 22 is small, and excellent in chucking force because of the low sheet resistance of the conductive layer 22 is preferable.
- the thickness of the conductive layer 22 is, for example, 10 to 1000 nm.
- a known film forming method for example, a sputtering method such as a magnetron sputtering method or an ion beam sputtering method, a CVD method, a vacuum evaporation method, an electrolytic plating method, or the like is used.
- a reflective multilayer film 31 or the like is formed on the surface 23 of the substrate 20.
- the reflective multilayer film 31 reflects EUV light.
- the EUV light applied to the portion without the absorption layer 134 in the reflective photomask 100 is reflected by the reflective multilayer film 31.
- the maximum value of the reflectance is, for example, 60% or more, preferably 63% or more.
- the reflective multilayer film 31 is formed by repeatedly laminating a plurality of types of layers having different refractive indexes in a predetermined order.
- the reflective multilayer film 31 is a Mo / Si reflective multilayer film in which Mo layers as low refractive index layers and Si layers as high refractive index layers are alternately and repeatedly stacked.
- the thickness of the Mo layer, the thickness of the Si layer, and the number of pairs of the Mo layer and the Si layer are appropriately set.
- the thickness of the Mo layer is 2.3 ⁇ 0.1 nm
- the number of pairs of Mo layer and Si layer is 30-60.
- the thickness of the reflective multilayer film 31 is, for example, 200 to 400 nm.
- the reflective multilayer film 31 is not particularly limited.
- the Ru / Si reflective multilayer film, the Mo / Be reflective multilayer film, the Mo compound / Si compound reflective multilayer film, the Si / Mo / Ru reflective multilayer film, the Si / Mo / It may be a Ru / Mo reflective multilayer film, a Si / Ru / Mo / Ru reflective multilayer film, or the like.
- a film forming method such as a magnetron sputtering method or an ion beam sputtering method is used.
- the process of forming the Mo layer using the Mo target and the process of forming the Si layer using the Si target are alternately repeated. Is called.
- the protective layer 32 prevents the reflective multilayer film 31 from being oxidized.
- As the material of the protective layer 32 Si, Ti, Ru, Rh, C, SiC, a mixture of these elements / compounds, or a material obtained by adding N, O, B or the like to these elements / compounds can be used.
- the layer thickness can be reduced to 1 to 5 nm, and the function of the buffer layer 33 to be described later can also be used, which is particularly preferable.
- the reflective multilayer film 31 is a Mo / Si reflective multilayer film
- the uppermost layer can be made to function as a protective layer by making the uppermost layer an Si layer.
- the uppermost Si layer is preferably 5 to 15 nm thicker than the usual 4.5 nm.
- a Ru film or Ru compound film serving as the protective layer 32 and the buffer layer 33 may be formed on the uppermost Si layer.
- the protective layer 32 is not necessarily one layer, and may be two or more layers.
- a film forming method such as a magnetron sputtering method or an ion beam sputtering method is used.
- the buffer layer 33 prevents the reflective multilayer film 31 from being damaged by the etching process (usually a dry etching process) of the absorption layer 34 in the manufacturing process of the reflective photomask 100.
- a material that is not easily affected by the etching process of the absorption layer 34 that is, a material having an etching rate slower than that of the absorption layer 34 and hardly damaged by the etching process is selected.
- the material satisfying this condition include Cr, Al, Ru, Ta, and nitrides thereof, and SiO 2 , Si 3 N 4 , Al 2 O 3, and mixtures thereof.
- Ru, Ru compound, CrN and SiO 2 are preferable, CrN, Ru and Ru compound are more preferable, and Ru and Ru compound are particularly preferable since they have the functions of the protective layer 32 and the buffer layer 33.
- the thickness of the buffer layer 33 is preferably 1 to 60 nm.
- the film formation method of the buffer layer 33 a known film formation method such as a magnetron sputtering method or an ion beam sputtering method is used.
- the absorption layer 34 is a layer that absorbs EUV light.
- the characteristic particularly required for the absorption layer 34 is that the pattern formed on the reflective photomask 100 is accurately transferred to the resist film on the wafer via the projection optical system of the EUV exposure apparatus. The intensity and phase of the reflected light from the light are adjusted.
- the first method is to reduce the intensity of the reflected light from the absorption layer 34 as much as possible.
- the surface of the absorption layer 34 (a low reflection layer is formed on the surface of the absorption layer).
- the film thickness and material of the absorption layer 34 are adjusted so that the reflectance of EUV light from the low reflection layer is 1% or less, particularly 0.7% or less.
- the second method uses the interference effect of the reflected light from the reflective multilayer film 31 and the reflected light from the surface of the absorption layer 34 (or the low reflection layer when a low reflection layer is formed on the absorption layer surface).
- the reflectance of EUV light from the absorption layer 34 (or a low reflection layer when a low reflection layer is formed on the absorption layer surface) is set to 15% or less (for example, 2 to 15%), and the reflective multilayer film
- the absorption layer 34 has a phase difference of 175 to 185 degrees between the reflected light from 31 and the reflected light from the absorbing layer 34 (or a low reflecting layer when a low reflecting layer is formed on the absorbing layer surface). Adjust film thickness and material.
- the thickness of the absorption layer 34 is preferably 60 nm or more, and particularly preferably 70 nm or more.
- a range of 20 nm to 60 nm is preferable, and a range of 25 nm to 55 nm is particularly preferable.
- the material constituting the absorption layer 34 is preferably a material containing Ta at least 40 at%, preferably at least 50 at%, more preferably at least 55 at%.
- the material mainly composed of Ta used for the absorption layer 34 preferably contains at least one element of Hf, Si, Zr, Ge, B, Pd, Pt, H, and N in addition to Ta.
- the material containing the above elements other than Ta include, for example, TaN, TaNH, TaHf, TaHfN, TaBSi, TaBSiN, TaB, TaBN, TaSi, TaSiN, TaGe, TaGeN, TaZr, TaZrN, TaPd, TaPdN, TaPt, TaPtN, etc. are mentioned. However, it is preferable that the absorption layer 34 does not contain oxygen.
- the oxygen content in the absorption layer 34 is preferably less than 25 at%.
- a dry etching process is usually used, and an etching gas is chlorine gas (mixed gas). Or a fluorine-based gas (including a mixed gas) is usually used.
- the oxygen content in the absorption layer 34 is more preferably 15 at% or less, further preferably 10 at% or less, and particularly preferably 5 at% or less.
- a film formation method such as a magnetron sputtering method or an ion beam sputtering method is used.
- the absorbing layer 34 is processed into a predetermined pattern in the manufacturing process of the reflective photomask 100 to become the absorbing layer 134.
- the low reflection layer 35 is a layer having a lower reflectance than the absorption layer 34 with respect to inspection light for inspecting the pattern of the absorption layer 134.
- inspection light for example, light having a wavelength of about 257 nm or about 193 nm is used.
- the inspection of the pattern shape of the absorption layer 134 is performed by utilizing the fact that the reflectance of the inspection light is different between a portion where the absorption layer 134 is present and a portion where the absorption layer 134 is not present. In a portion where the absorption layer 134 is not present, the buffer layer 33 (or the protective layer 32 when there is no buffer layer 33) is usually exposed.
- the difference in inspection light reflectance increases between the portion where the absorption layer 134 is present and the portion where the absorption layer 134 is absent. Will improve.
- the low reflection layer 35 is made of a material having a refractive index lower than that of the absorption layer 34 at the wavelength of the inspection light.
- a material mainly containing Ta can be used.
- at least one element selected from Hf, Ge, Si, B, N, H, and O is contained. Specific examples include TaO, TaON, TaONH, TaBO, TaHfO, TaHfON, TaBSiO, TaBSiON, SiN, and SiON.
- the total thickness of the absorption layer 34 and the low reflection layer 35 is preferably 10 to 65 nm, more preferably 30 to 65 nm, and 35 to 60 nm. More preferably. Further, if the layer thickness of the low reflection layer 35 is larger than the layer thickness of the absorption layer 34, the EUV light absorption characteristics in the absorption layer 34 may be deteriorated. It is preferable that the thickness is smaller than the layer thickness. Therefore, the thickness of the low reflection layer 35 is preferably 1 to 20 nm, more preferably 3 to 15 nm, and further preferably 5 to 10 nm.
- the film formation method of the low reflection layer 35 a film formation method such as a magnetron sputtering method or an ion beam sputtering method is used. Note that the use of EUV light as the inspection light is also being studied, and when inspecting with EUV light, the low reflection layer need not be formed.
- Examples of other functional layers include a hard mask.
- the hard mask is on the surface of the absorption layer 34 (the low reflection layer 35 when the low reflection layer 35 is formed on the absorption layer 34 and the low reflection layer 35 does not have a hard mask function). Since the dry etching rate described above is slower than that of the absorption layer 34 and / or the low reflection layer 35, the resist film can be made thinner and a finer pattern can be produced.
- a material for such a hard mask CrN, CrO, CrON, Ru or the like can be used, and the film thickness is preferably 2 to 10 nm.
- FIG. 3 is a plan view of an example of a temporary reference mark formed on the substrate and the surface of the substrate.
- the temporary reference mark 40 is a mark indicating the reference position of the substrate 20.
- the temporary reference mark 40 is formed on the surface 23 of the substrate 20. Prior to the formation of the reflective multilayer film 31, the position of the defect of the substrate 20 can be specified using the position of the temporary reference mark 40 as a reference position and recorded on the recording medium.
- the recording medium a magnetic recording medium, an optical recording medium, an electronic recording medium, paper, or the like is used.
- Three or more temporary reference marks 40 are formed on the surface 23 of the substrate 20 (four in FIG. 3). These temporary reference marks 40 are not arranged on the same straight line. Of the reference points (for example, center points) indicated by each temporary reference mark 40, one reference point is the origin, and a straight line connecting the origin and one other reference point is the X axis. The origin and the remaining one reference point A straight line connecting the two becomes the Y axis. The X axis and the Y axis may be orthogonal to each other. The position of the defect is specified using this XY coordinate system.
- the temporary reference mark 40 is formed in a region that is not used in a subsequent process (for example, a region that is not subjected to pattern processing in the manufacturing process of the reflective photomask), and specifically, formed in the outer peripheral portion of the substrate 20. .
- the temporary reference mark 40 is formed in a concave shape or a convex shape (in the present embodiment, a concave shape) on the surface 23 of the substrate 20.
- the convex temporary reference mark will be described in the second embodiment.
- the concave temporary reference mark 40 is formed by removing a part of the surface 23 of the substrate 20. Removal methods include laser ablation, FIB, nanoindentation, micromachining (for example, mechanical microfabrication using Rave nm450), lithography using resist patterning and etching, etc. Is used. In particular, the FIB method, the micromachining method, and the laser ablation method are preferably used.
- an actual defect existing on the surface 23 of the substrate 20 for example, a concave defect such as a pit generated by polishing or cleaning can be used.
- the shape of the concave temporary reference mark 40 is, for example, a quadrangle, a triangle, a circle, an ellipse, or a rhombus as shown in FIG. 3 in a plan view (viewed from a direction orthogonal to the surface 23 of the substrate 20). In a side view, for example, as shown in FIG.
- the size of the concave temporary reference mark 40 is, for example, in plan view, the maximum length is 200 nm or less, preferably 70 nm or less, more preferably 50 nm or less, and the minimum length is 10 nm or more, preferably 30 nm or more. .
- the maximum depth of the concave temporary reference mark 40 is 20 nm or less, preferably 10 nm or less, more preferably 5 nm or less, and the minimum depth of the concave temporary reference mark 40 is 1 nm or more, preferably 2 nm or more.
- the detection sensitivity of a commercially available reflective mask blank or glass substrate automatic defect inspection apparatus (for example, M7360 manufactured by Lasertec Corporation) using ultraviolet light or visible light as a light source. Since the detection position reproducibility is not deteriorated due to the detection spot becoming too large, the reproducibility of the detection position is good. Therefore, the defect position existing on the surface 23 of the substrate 20 can be specified with sufficient accuracy.
- the concave temporary reference mark 40 is transferred to a layer formed on the temporary reference mark 40.
- the temporary reference mark 40 is transferred to the reflective multilayer film 31, the protective layer 32, the buffer layer 33, the absorption layer 34, and the low reflective layer 35, as shown in FIG. 1.
- the temporary reference mark 40 on the surface of the substrate 20 may not be provided.
- the inspection sensitivity is higher on the reflective multilayer film 31 than on the substrate 20, so that defects on the substrate 20 are also transferred onto the reflective multilayer film 31. This is because detection on the film 31 becomes possible.
- defects for example, foreign matter, scratches or pits
- the periodic structure of the reflective multilayer film 31 is disturbed, and defects (so-called phase defects) are generated in the reflective multilayer film.
- the reference mark 50 is a mark indicating the reference position of the reflective multilayer film 31.
- the fiducial mark 50 is concave or convex on the surface of the reflective multilayer film 31 or the surface of one layer 32, 33 formed between the reflective multilayer film 31 and the absorption layer 34 (the surface of the buffer layer 33 in this embodiment). (In this embodiment, a concave shape).
- the position of the defect of the reflective multilayer film 31 can be specified using the position of the reference mark 50 as a reference position and recorded on the recording medium.
- the formation surface of the reference mark 50 is the surface of the buffer layer 33 (or the surface of the protective layer 32)
- the position of the defect in the reflective multilayer film 31 is the position of the defect in the buffer layer 33 (or And the position of the defect in the protective layer 32).
- the reference mark 50 is transferred to a layer (for example, the absorption layer 34 and the low reflection layer 35) formed on the reference mark 50, and becomes a mark (fiducial mark) indicating the reference position of the reflective mask blank 10.
- the transferred reference mark has substantially the same size and shape as the reference mark 50 formed first.
- FIG. 4 is a plan view of an example of a reference mark formed on the surface of the buffer layer 33 formed between the reflective multilayer film 31 and the absorption layer 34. 4 and 1 are formed on the surface of the buffer layer 33, they may be formed on the surface of the protective layer 32 or the surface of the reflective multilayer film 31.
- the reference mark 50 is formed in a shape according to the application.
- the reference mark 50 is formed in a cross shape in a plan view (viewed from a direction orthogonal to the formation surface of the reference mark 50). The intersection of the center line of one straight part and the center lines of the remaining straight parts becomes the reference point.
- the reference mark 50 is preferably a size that can be detected by low-magnification observation, and the size is set according to the dimensional tolerance of the reflective mask blank 10 or the like.
- the dimensional tolerance of one side (152.0 mm) of a standard square reflective mask blank is ⁇ 0.1 mm.
- a predetermined apparatus for example, an electron beam drawing apparatus
- positioning is performed by pressing, for example, two sides of the reflective mask blank against a pin.
- the position of the reference mark 50 can be shifted by ⁇ 0.1 mm for each reflective mask blank. Therefore, it is preferable that the reference mark 50 has a size that can be detected by observation at a low magnification so that the position can be detected in a short time.
- the area of the reference mark 50 in a plan view is preferably 1 ⁇ m 2 to 1 mm 2 .
- Each linear portion of the cross-shaped reference mark 50 may have, for example, a width W of 0.2 to 10 ⁇ m and a length L of 10 to 500 ⁇ m.
- the area of the reference mark 50 in plan view is 3.96 ⁇ m 2 to 9900 ⁇ m 2 .
- Three or more reference marks 50 are formed on the formation surface of the reference mark 50 (in this embodiment, the surface of the buffer layer 33). Three or more reference marks 50 are not arranged on the same straight line.
- one reference point is the origin
- a straight line connecting the origin and the other reference point is the X axis
- a straight line connecting the origin and the remaining one reference point is the Y axis.
- the X axis and the Y axis may be orthogonal to each other. The position of the defect is specified using this XY coordinate system.
- the reference mark 50 is formed in a region of the reflective multilayer film 31 that is not used in a subsequent process (for example, a region that is not subjected to pattern processing in the manufacturing process of the reflective photomask). Formed on the upper perimeter.
- the reference mark 50 may be formed at a position away from the temporary reference mark 40. In the plan view, the reference mark 50 may be formed at a position overlapping the temporary reference mark 40, which will be described in the fifth embodiment.
- the reference mark 50 is formed, for example, in a concave shape on the surface of the reflective multilayer film 31, the protective layer 32, or the buffer layer 33 (the surface opposite to the substrate 20 side).
- the convex reference mark 50 will be described in the second embodiment.
- the concave fiducial mark 50 is formed by removing a part of the reflective multilayer film 31.
- the concave reference mark 50 removes a part of the buffer layer 33 and a part of the protective layer 32 so as to penetrate the buffer layer 33 and the protective layer 32 after the formation of the buffer layer 33. May be formed.
- Removal methods include laser ablation, FIB (Focused Ion Beam), lithography using resist patterning and etching, nanoindentation, and micromachining (eg, mechanically using nm450 manufactured by Rave).
- a microfabrication method e.g, a microfabrication method.
- the laser ablation method and the FIB method can change the material of the bottom portion of the reference mark 50 by laser light or metal ions used for processing.
- the bottom of the reference mark 50 can be oxidized or nitrided.
- the bottom of the reference mark 50 can be transformed into a MoSi compound. Since the material of the bottom portion of the reference mark 50 is altered in this way, the contrast between the bottom portion of the reference mark 50 and the periphery of the reference mark 50 is improved.
- the FIB method is preferable because fine processing is possible.
- the concave fiducial mark 50 has a stepped surface 50a substantially perpendicular to the surface on which the fiducial mark 50 is formed and an offset surface (inner bottom surface) that is substantially parallel to the fiducial mark 50 formed surface. ) 50b.
- the edge is sharper and the side wall angle is steeper than the temporary fiducial mark 43 transferred to the surface on which the fiducial mark 50 is formed.
- the concave fiducial mark 50 differs from the periphery of the fiducial mark 50 in reflectance for light of a predetermined wavelength (inspection light of the reflective multilayer film 31).
- a predetermined wavelength inspection light of the reflective multilayer film 31.
- EUV light can reach the inside of the reflective multilayer film 31 and can be inspected to the inside.
- the concave fiducial mark 50 of the present embodiment is formed by removing a part of the reflective multilayer film 31, the reflectivity for the EUV light that is the inspection light is higher than that of the reflective multilayer film 31 around the fiducial mark 50. Lower. As a result, the contrast between the reference mark 50 and its periphery is increased, and the reproducibility of the detection position of the reference mark 50 is improved. Therefore, the position of the defect of the reflective multilayer film 31 can be specified with high accuracy using the position of the reference mark 50 as a reference position.
- the difference (absolute value) between the reflectance of the reference mark 50 with respect to the inspection light and the reflectance with respect to the inspection light around the reference mark 50 is preferably 0.2% or more, more preferably 0.5% or more, and 1.0. % Or more is more preferable.
- FIG. 5 is a diagram showing the relationship between the EUV light reflectance and the number of Mo / Si pairs in the Mo / Si reflective multilayer film.
- the thickness of the Mo layer is 2.3 ⁇ 0.1 nm
- the thickness of the Si layer is 4.5 ⁇ 0.1 nm
- the wavelength of EUV light is 13.5 nm.
- the reflectance of EUV light decreases.
- the number of pairs is preferably 30 or more, and particularly preferably 35 or more.
- the number of pairs is preferably 60 or less, more preferably 55 or less, and 50 or less. Further preferred.
- the reference mark 50 is preferably formed by removing two or more Mo layer / Si layer pairs in order to increase the contrast with the periphery. In particular, it is preferable to remove and form 5 or more. Since the Mo layer / Si layer pair is about 7 nm, the depth of the reference mark 50 is about 14 nm or more in the former case and about 35 nm or more in the latter case. In this case, the EUV light reflectance of the reference mark 50 is lower than that around the reference mark 50.
- the reference mark 50 When the formation surface of the reference mark 50 is the surface of the protective layer 32 (or the buffer layer 33), the reference mark 50 penetrates the protective layer 32 (or the protective layer 32 and the buffer layer 33) in order to increase the contrast with the periphery. Further, it is preferable to remove two or more Mo layer / Si layer pairs, and it is particularly preferable to remove five or more pairs. In this case, the EUV light reflectance of the reference mark 50 is lower than that around the reference mark 50.
- the material at the bottom of the fiducial mark 50 may be a MoSi compound formed by the reaction of both the Mo layer and the Si layer when the fiducial mark 50 is processed. .
- the reflection of EUV light is caused by the difference in refractive index between the Mo layer and the Si layer. If the MoSi compound is formed by reacting both the Mo layer and the Si layer, the difference in refractive index is eliminated, so that the EUV light reflectance of the reference mark 50 can be further reduced.
- FIG. 7 is a graph showing the relationship between the light reflectance and the number of Mo / Si pairs in the Mo / Si reflective multilayer film.
- the Mo layer has a thickness of 2.3 ⁇ 0.1 nm
- the Si layer has a thickness of 4.5 ⁇ 0.1 nm.
- the line L21 is the relationship when the light wavelength is 190 nm
- the line L22 is the relationship when the light wavelength is 257 nm
- the line L23 is the relationship when the light wavelength is 300 nm
- the line L24 is the light wavelength.
- the relationship when the wavelength is 400 nm
- the line L25 indicates the relationship when the light wavelength is 500 nm
- the line L26 indicates the relationship when the light wavelength is 600 nm.
- FIG. 7 shows the light reflectivity for each layer (0.5 pair) in addition to the light reflectivity for each pair.
- the material at the bottom of the reference mark 50 is the uppermost layer of the Mo / Si reflective multilayer film (what is the substrate side) in order to increase the contrast with the periphery. It is preferably different from the material of the opposite layer).
- the material at the bottom of the reference mark 50 may be a MoSi compound formed by reacting both the Mo layer and the Si layer when the reference mark 50 is processed. good.
- the reference mark 50 has a lower far ultraviolet light reflectance or visible light reflectance than the periphery thereof.
- the material of the bottom of the fiducial mark 50 is formed by oxidizing, nitriding, or oxynitriding the Mo layer or Si layer when the fiducial mark 50 is processed.
- the oxide, nitride, or acid of Mo, Si, or MoSi compound. Nitride may be used.
- the reference mark 50 has a lower far ultraviolet light reflectance or visible light reflectance than the periphery thereof.
- the reflectance with respect to visible light (L24 to L26) is increased, so that the reference mark 50 having the number of pairs of 5 or less may be formed.
- the reference mark 50 has a higher visible light reflectance than the periphery thereof.
- FIG. 6 is a diagram showing the relationship between the light reflectance and the light wavelength in the Mo / Si reflective multilayer film.
- the thickness of the Mo layer is 2.3 ⁇ 0.1 nm
- the thickness of the Si layer is 4.5 ⁇ 0.1 nm.
- line L11 is a relationship when the number of pairs is 5
- line L12 is a relationship when the number of pairs is 10
- line L13 is a relationship when the number of pairs is 15
- line L14 is a relationship when the number of pairs is 40.
- the relationship, line L15 shows the relationship when a Ru layer is further formed on the Mo / Si reflective multilayer film having 40 pairs.
- the Ru layer also serves as a protective layer and a buffer layer, and the Ru layer has a thickness of 2.5 nm.
- the reflectivity of far ultraviolet light and visible light also varies depending on the presence or absence of the Ru layer. Therefore, when the reference mark 50 is formed on the surface of the Ru layer, it is preferable to form the concave reference mark 50 penetrating the Ru layer in order to increase the contrast between the reference mark 50 and its periphery.
- the material of the bottom of the fiducial mark 50 is different from the material of the Ru layer. In this case, the reference mark 50 has a higher or lower light reflectivity than the surrounding area.
- the reference mark 50 is formed after the reflective multilayer film 31 is formed, and is transferred to the absorption layer 34 or the like that is thinner (about 1 ⁇ 4) than the reflective multilayer film 31. Therefore, since the transferred reference mark 55 has substantially the same shape as the original reference mark 50, the reproducibility of the detection position by the inspection light (electron beam, far ultraviolet light, visible light, EUV light) is good, and the following ( The effects 1) to (2) can be obtained.
- the inspection light electron beam, far ultraviolet light, visible light, EUV light
- an electron beam drawing apparatus for example, Nuflare EBM8000
- a laser drawing apparatus for example, a laser drawing apparatus
- a mask pattern coordinate measuring apparatus for example, KLA Tencor IPRO5
- a mask pattern inspection apparatus for example, KLA (Tencor Teron 610, etc.)
- KLA Tincor Teron 610
- FIG. 8 is a comparative view showing an example of a cross-sectional profile of a reference mark transferred onto a reflective mask blank and a conventional example.
- the solid line indicates the cross-sectional profile of the example
- the broken line indicates the cross-sectional profile of the conventional example.
- the reflective mask blank used was a Mo / Si reflective multilayer film as a reflective multilayer film, a Ru layer as a protective layer and a buffer layer, a TaN layer as an absorption layer, and a low layer on a quartz glass substrate doped with TiO 2.
- a TaON layer as a reflective layer is formed in this order.
- the fiducial mark of the example was formed by removing a part of the Ru layer (thickness 2.5 nm) and a part of the Mo / Si reflective multilayer film (thickness 280 nm) on the Ru layer. It is formed in a concave shape (depth 80 nm) and transferred to a TaN layer (thickness 51 nm) and a TaON layer (thickness 7 nm).
- the reference mark of the conventional example is formed in a concave shape (depth 80 nm) on the substrate, and is a Mo / Si reflective multilayer film (thickness 280 nm), Ru layer (thickness 2.5 nm), TaN layer (thickness 51 nm). ) And a TaON layer (thickness 7 nm).
- the reference mark of the example shows a steeper cross-sectional profile when transferred onto the reflective mask blank as compared with the reference mark of the conventional example.
- the temporary reference mark and the reference mark are each formed in a concave shape.
- the temporary reference mark and the reference mark are each formed in a convex shape.
- the present embodiment is the same as the first embodiment except that there is a difference in the shape of the temporary reference mark and the shape of the reference mark, and therefore the difference will be mainly described.
- FIG. 9 is a cross-sectional view of a reflective mask blank 10A according to the second embodiment of the present invention.
- the reflective mask blank 10A has a convex temporary reference mark 40A and a convex reference mark 50A.
- the temporary reference mark 40 ⁇ / b> A is formed in a convex shape on the surface 23 of the substrate 20.
- the defect position of the substrate 20 can be specified using the position of the temporary reference mark 40A as the reference position and recorded on the recording medium.
- the shape of the convex temporary reference mark 40A is, for example, a quadrangle, a triangle, a circle, an ellipse, or a rhombus in a plan view (viewed from a direction orthogonal to the surface 23 of the substrate 20). For example, as shown in FIG.
- the size of the convex temporary reference mark 40A is, for example, in plan view, the maximum length is 200 nm or less, preferably 70 nm or less, more preferably 50 nm or less, and the minimum length is 10 nm or more, preferably 30 nm or more. is there.
- the maximum height of the temporary reference mark 40A is 20 nm or less, preferably 10 nm or less, more preferably 5 nm or less, and the minimum height of the temporary reference mark 40A is 1 nm or more, preferably 2 nm or more.
- the detection sensitivity of a commercially available reflective mask blank or glass substrate automatic defect inspection apparatus (for example, M7360 manufactured by Lasertec Corporation) using far ultraviolet light or visible light as a light source. Since the detection position reproducibility is not deteriorated due to the detection spot becoming too large, the reproducibility of the mark detection position is good. Therefore, the defect position existing on the surface 23 of the substrate 20 can be specified with sufficient accuracy.
- the convex temporary reference mark 40A is formed by laminating a predetermined material such as chromium or tantalum on the surface 23 of the substrate 20.
- the material of the temporary reference mark 40 ⁇ / b> A may be removed by lithography after being formed on the surface 23 of the substrate 20, or may be locally deposited on the surface 23 of the substrate 20. In the latter case, an appropriate gas is selected depending on the material to be deposited, and an ion beam or an electron beam is irradiated in an atmosphere containing a metal compound such as platinum or tungsten (for example, hexacarbonyltungsten) or a hydrocarbon compound (such as naphthalene or phenanthrene).
- a metal compound such as platinum or tungsten (for example, hexacarbonyltungsten) or a hydrocarbon compound (such as naphthalene or phenanthrene).
- an actual defect existing on the surface 23 of the substrate 20 for example, a convex defect such as a particle adhered to the surface derived from cleaning or the environment can be used.
- the convex temporary reference mark 40A is transferred to the reflective multilayer film 31, the protective layer 32, the buffer layer 33, the absorbing layer 34, and the low reflective layer 35, which are sequentially formed on the substrate 20, as shown in FIG.
- the convex temporary reference mark 40A is transferred to the reflective multilayer film 31, the protective layer 32, the buffer layer 33, the absorbing layer 34, and the low reflective layer 35, which are sequentially formed on the substrate 20, as shown in FIG.
- the temporary reference mark 40A on the surface of the substrate 20 may not be provided.
- the current optical defect inspection apparatus since the inspection sensitivity is higher on the reflective multilayer film 31 than on the substrate 20, defects on the substrate 20 are also transferred to the reflective multilayer film 31, so that the reflective multilayer film is used. This is because detection on 31 is possible.
- defects for example, foreign matter, scratches or pits
- the periodic structure of the reflective multilayer film 31 is disturbed, and defects (so-called phase defects) are generated in the reflective multilayer film.
- the reference mark 50A is a predetermined material on the surface of the reflective multilayer film 31 or the surface of one layer 32, 33 formed between the reflective multilayer film 31 and the absorption layer 34 (the surface of the buffer layer 33 in this embodiment). Are formed into a convex shape.
- the material of the fiducial mark 50A is selected so that the fiducial mark 50A and its surroundings exhibit different light reflectivities.
- the material of the fiducial mark 50A is not particularly limited.
- Si, Mo used for a reflective multilayer film, Ta, Cr, Pt, W, C, or an oxide or nitride thereof is used.
- the fiducial mark 50A formed by laminating these materials and having a convex shape exhibits a low EUV light reflectance as compared with the periphery thereof.
- the difference (absolute value) between the reflectance of the reference mark 50 with respect to the inspection light and the reflectance with respect to the inspection light around the reference mark 50 is preferably 0.2% or more, more preferably 0.5% or more, and 1.0. % Or more is more preferable.
- the material of the fiducial mark 50A may be formed on the formation surface of the fiducial mark 50A, and then removed by lithography, or may be locally deposited on the formation surface of the fiducial mark 50A. In the latter case, an appropriate gas is selected according to the material to be deposited, and an ion beam or electron beam is applied in an atmosphere containing a metal compound such as platinum or tungsten (for example, hexacarbonyltungsten) or a hydrocarbon compound (such as naphthalene or phenanthrene).
- a metal compound such as platinum or tungsten (for example, hexacarbonyltungsten) or a hydrocarbon compound (such as naphthalene or phenanthrene).
- the convex reference mark 50A is formed in a shape according to the application.
- the convex fiducial mark 50A is formed in a cross shape in plan view, as in the first embodiment. The intersection of the center line of one straight part and the center lines of the remaining straight parts becomes the reference point.
- Three or more convex fiducial marks 50A are formed on the formation surface of the fiducial mark 50A (in this embodiment, the surface of the buffer layer 33).
- Three or more reference marks 50A are not arranged on the same straight line.
- one reference point is the origin
- a straight line connecting the origin and the other reference point is the X axis
- a straight line connecting the origin and the remaining one reference point is the Y axis.
- the X axis and the Y axis may be orthogonal to each other.
- the convex reference mark 50A has a step surface 50Aa substantially perpendicular to the formation surface of the reference mark 50A and an offset surface 50Ab substantially parallel to the formation surface of the reference mark 50A so that the edge is sharp and the side wall angle is steep. It is preferable.
- the height of the convex fiducial mark 50A is appropriately set according to the type and thickness of the layer formed on the fiducial mark 50A.
- the height of the convex fiducial mark 50A is, for example, 2 to 300 nm, preferably 7 to 150 nm, and more preferably 40 to 120 nm.
- the reference mark 50A is preferably a size that can be detected by low-magnification observation, and the size is set according to the dimensional tolerance of the reflective mask blank 10A.
- the dimensional tolerance of one side (152.0 mm) of a standard square reflective mask blank is ⁇ 0.1 mm.
- a predetermined apparatus for example, an electron beam drawing apparatus
- positioning is performed by pressing, for example, two sides of the reflective mask blank against a pin.
- the position of the reference mark 50A can be shifted by ⁇ 0.1 mm for each reflective mask blank. Therefore, it is preferable that the reference mark 50A has a size that can be detected by observation at a low magnification so that the position can be detected in a short time.
- the area of the reference mark 50A in a plan view is preferably 1 ⁇ m 2 to 1 mm 2 .
- Each linear portion of the cross-shaped reference mark 50A may have, for example, a width W of 0.2 to 10 ⁇ m and a length L of 10 to 500 ⁇ m.
- the area of the reference mark 50 in plan view is 3.96 ⁇ m 2 to 9900 ⁇ m 2 .
- the convex reference mark 50A is formed in a region that is not used in a later process (for example, a region that is not subjected to pattern processing in the manufacturing process of the reflective photomask), and is formed, for example, on the outer peripheral portion on the formation surface of the reference mark 50A.
- the convex reference mark 50A is formed after the formation of the reflective multilayer film 31, as in the first embodiment, it is compared with the temporary reference mark 43A (see FIG. 9) transferred to the formation surface of the reference mark 50A. As a result, the edge is sharp and the side wall angle is steep.
- the convex fiducial mark 50A has a lower reflectivity for the EUV light that is the inspection light than the reflective multilayer film 31 around the fiducial mark 50A. As a result, when the defect of the reflective multilayer film 31 is inspected using EUV light, the contrast between the reference mark 50A and the periphery thereof is increased, and the reproducibility of the detection position of the reference mark 50A is improved.
- the position of the defect of the reflective multilayer film 31 can be accurately identified with the position of the reference mark 50A as the reference position. Further, by selecting materials having different reflectivities for far ultraviolet light to visible light, it is possible to produce a reference mark with good reproducibility of detection positions for inspection of far ultraviolet light to visible light.
- the convex fiducial mark 50A is formed after the formation of the reflective multilayer film 31 and is transferred to the absorption layer 34 that is thinner (about 1/4) than the reflective multilayer film 31 as in the first embodiment. Is done. Therefore, the transferred reference mark 55A has substantially the same shape as the original reference mark 50A, and the reproducibility of the detection position by inspection light (for example, electron beam, EUV light, far ultraviolet light, or visible light) is good, and the following ( The effects 1) to (2) can be obtained.
- the electron beam drawing device, the coordinate measuring device, and the mask appearance inspection device can detect the position of the reference mark 55A with high reproducibility by using an electron beam or far ultraviolet light.
- these apparatuses can accurately detect the position of a defect such as the reflective multilayer film 31 based on information provided from the supplier of the reflective mask blank 10A.
- the position of the reference mark 55A can be detected with high reproducibility by far ultraviolet light or visible light.
- the present embodiment relates to a method for manufacturing the reflective mask blank 10 described above.
- the manufacturing method of the reflective mask blank 10A is the same.
- FIG. 10 is a flowchart of a method for manufacturing a reflective mask blank according to the third embodiment of the present invention.
- the manufacturing method of the reflective mask blank 10 includes a step S101 for preparing the substrate 20, a step S102 for forming the temporary reference mark 40 on the front surface 23 of the substrate 20, and a step S103 for forming the conductive layer 22 on the back surface 21 of the substrate 20.
- the reflective mask blank 10 is manufactured by a step S104 for forming the reflective multilayer film 31, a step S105 for forming the protective layer 32, a step S106 for forming the buffer layer 33, and a step for forming the reference mark 50.
- S107, a step S108 for forming the absorption layer 34, and a step S109 for forming the low reflection layer 35 are further included. Between each of the steps S101 to S109, there may be a washing step, a drying step and the like.
- the step S107 for forming the reference mark 50 may be performed after the step S104 for forming the reflective multilayer film 31 and before the step S108 for forming the absorption layer 34.
- the protective layer 32 is formed. You may implement between process S105 and process S106 which forms the buffer layer 33 into a film.
- the manufacturing method of the reflective mask blank 10 of the present embodiment includes the step of forming the reference mark 50, the effects described in the first embodiment can be enjoyed.
- the reflectance of the reflective multilayer film with respect to the inspection light is different between the reference mark 50 and its periphery (there is contrast), and the reproducibility of the detection position by the inspection light (for example, EUV light, far ultraviolet light, or visible light) is good. Therefore, the position of the defect in the reflective multilayer film 31 can be specified with high accuracy.
- the reference mark 50 is transferred onto the reflective mask blank 10 in substantially the same shape, the transferred reference mark 55 is detected at a position detected by inspection light (for example, electron beam, EUV light, far ultraviolet light, or visible light).
- the reproducibility is good, and the following effects (1) to (2) can be obtained.
- the electron beam drawing device, the coordinate measuring device, and the mask appearance inspection device can detect the position of the reference mark 55 with high reproducibility by using an electron beam, far ultraviolet light, and visible light. Therefore, these apparatuses can accurately detect the position of a defect such as the reflective multilayer film 31 based on information provided from the supplier of the reflective mask blank 10.
- the position of the reference mark 55 can be detected with high reproducibility by far ultraviolet light or visible light.
- step S102 for forming the temporary reference mark 40 may not be performed.
- a concave or convex defect present on the surface 23 of the substrate 20 is used as a temporary reference mark.
- the step S105 for forming the protective layer 32, the step S106 for forming the buffer layer 33, and the step S109 for forming the low reflective layer 35 are optional steps and may be omitted. Moreover, the manufacturing method of the reflective mask blank 10 may include a step of forming another functional layer.
- step S103 for forming the conductive layer 22 may be performed after the steps S104 to S109, and the order thereof is not limited.
- the present embodiment relates to a quality control method for the reflective mask blank 10 described above.
- the quality control method for the reflective mask blank 10A is the same.
- FIG. 11 is a flowchart of a quality control method for a reflective mask blank according to the fourth embodiment of the present invention.
- the quality control method of the reflective mask blank 10 includes a first specifying step S201 for specifying a defect position on the surface 23 of the substrate 20 using the position of the temporary reference mark 40 as a reference position.
- the first specific step S201 is performed after the step S102 (see FIG. 10) for forming the temporary reference mark 40 and before the step S104 (see FIG. 10) for forming the reflective multilayer film 31.
- the surface 23 of the substrate 20 is irradiated or scanned with spot light such as visible rays, ultraviolet rays, vacuum ultraviolet rays, soft X-rays, or electron beams, and scattered light from the specimen is received.
- spot light such as visible rays, ultraviolet rays, vacuum ultraviolet rays, soft X-rays, or electron beams
- scattered light from the specimen is received.
- reflected light may be used.
- the type of defect (for example, a concave shape or a convex shape) may be specified.
- Information about the defect is recorded on a recording medium. When there is no defect, information indicating that there is no defect is recorded on the recording medium.
- the quality control method of the reflective mask blank 10 is based on the detection step S202 for detecting the positional relationship between the position of the temporary reference mark 40 and the position of the reference mark 50, and the positional relationship detected in the detection step S202.
- the position of the temporary reference mark 40 more specifically, the position of the temporary reference mark 43 transferred to the layer (for example, the buffer layer 33) formed on the temporary reference mark 40, and the position of the reference mark 50 are detected.
- the positional relationship with is detected. Since the method for detecting the position of the temporary reference mark 40 and the position of the reference mark 50 is the same as the method for specifying the position of the defect, description thereof will be omitted.
- the detection step S202 may be performed simultaneously with the following second specific step S204.
- the timing which performs detection process S202 is not specifically limited.
- the detection step S202 may detect the positional relationship between the reference mark 55 transferred to the low reflection layer 35 and the temporary reference mark transferred to the low reflection layer 35 after the low reflection layer 35 is formed. Good.
- the conversion step S203 converts, for example, the position of the defect identified in the first identification step S201 into a position where the position of the reference mark 50 is the reference position based on the positional relationship detected in the detection step S202.
- the conversion result is recorded on a recording medium. Conversion process S203 should just be performed after detection process S202, and the timing is not specifically limited.
- the quality control method of the reflective mask blank 10 includes a second specifying step S204 for specifying the position of the defect in the reflective multilayer film 31 using the position of the reference mark 50 as a reference position.
- the second specific step S204 is performed after the step S107 (see FIG. 10) for forming the reference mark 50 and before the step S108 (see FIG. 10) for forming the absorption layer 34.
- the second specifying step 202 is performed after the step S106 of forming the buffer layer 33, and the position of the defect in the reflective multilayer film 31, the position of the defect in the protective layer 32, and the position of the defect in the buffer layer 33 are determined. Identify together. This is because the reflective multilayer film 31, the protective layer 32, and the buffer layer 33 are often formed continuously.
- 2nd specific process S204 of this embodiment is performed after process S106 which forms the buffer layer 33, this invention is not limited to this.
- it may be performed before the step S105 of forming the protective layer 32, and the position of the defect in the reflective multilayer film 31 is specified separately from the position of the defect in the protective layer 32 and the position of the defect in the buffer layer 33. May be.
- a spot light such as EUV light is scanned on the surface of the test body (in this embodiment, the surface of the buffer layer 33), and the reflected light from the test body is received, and the reference mark
- a spot light such as EUV light
- EUV light is scanned on the surface of the test body (in this embodiment, the surface of the buffer layer 33)
- the reflected light from the test body is received, and the reference mark
- the type of defect (for example, a concave shape or a convex shape) may be specified.
- Information about the defect is recorded on a recording medium. When there is no defect, information indicating that there is no defect is recorded on the recording medium.
- the quality control method of the reflective mask blank 10 includes a third specifying step S205 that specifies the position of the defect in the absorption layer 34 using the position of the reference mark 50 as a reference position.
- the third specific step S205 is performed after the step S108 (see FIG. 10) for forming the absorption layer 34.
- the third specifying step S205 is performed after the step S109 for forming the low reflective layer 35, and the position of the defect in the absorption layer 34 is set with the position of the reference mark 55 transferred to the low reflective layer 35 as the reference position. , And the positions of defects in the low reflective layer 35 are specified together. This is because the absorption layer 34 and the low reflection layer 35 are often formed continuously.
- 3rd specific process S205 of this embodiment is performed after process S109 which forms the low reflection layer 35, this invention is not limited to this. For example, it may be performed before the step S109 of forming the low reflection layer 35, and the position of the defect in the absorption layer 34 may be specified separately from the position of the defect in the low reflection layer 35.
- the surface of the specimen (the surface of the low reflection layer 35 in the present embodiment) is irradiated or scanned with spot light such as visible light, ultraviolet light, EUV light, or an electron beam, There is a method of detecting the position of the reference mark 50 and the position of the defect by receiving the reflected light from the specimen.
- the type of defect (for example, a concave shape or a convex shape) may be specified.
- Information about the defect is recorded on a recording medium. When there is no defect, information indicating that there is no defect is recorded on the recording medium.
- Information regarding the defects recorded on the recording medium in the first to third specific steps S201, S204, and S205 is used in the manufacturing process of the reflective photomask 100.
- the electron beam drawing device, coordinate measuring device, and mask appearance inspection device used in the manufacturing process of the reflective photomask 100 detect the reflected electron beam and the reflected ultraviolet light, and transfer them to the reference mark 50 (specifically, transfer to the low reflective layer 35).
- the position of the reference mark 55) thus detected can be detected with good reproducibility, and the defect position can be accurately known based on the information provided from the supplier of the reflective mask blank 10.
- the quality control method of the present embodiment uses the reference mark 50, the effects described in the first embodiment can be enjoyed.
- the reflectance of the reflective multilayer film with respect to the inspection light is different between the reference mark 50 and its periphery (there is contrast), and the reproducibility of the detection position by the inspection light (for example, EUV light, far ultraviolet light, or visible light) is good. Therefore, the position of the defect in the reflective multilayer film 31 can be specified with high accuracy.
- the reference mark 50 is transferred onto the reflective mask blank 10 in substantially the same shape, the transferred reference mark 55 is detected at a position detected by inspection light (for example, electron beam, EUV light, far ultraviolet light, or visible light). The reproducibility is good, and the following effects (1) to (2) can be obtained.
- the electron beam drawing device, the coordinate measuring device, and the mask appearance inspection device can detect the position of the reference mark 55 with high reproducibility by using an electron beam, far ultraviolet light, and visible light. Therefore, these apparatuses can accurately detect the position of a defect such as the reflective multilayer film 31 based on information provided from the supplier of the reflective mask blank 10.
- the position of the reference mark 55 can be detected with high reproducibility by ultraviolet light or visible light.
- the quality control method of the present embodiment includes the first to third specific steps S201, S204, and S205, but it is only necessary to include the second specific step S204. This is because the position of the defect in the reflective multilayer film 31 most affects the quality of the reflective photomask 100.
- the reference mark 50 is formed at a position away from the temporary reference mark 40 in plan view.
- the reference mark is formed so as to overlap the temporary reference mark.
- the present embodiment is the same as the first embodiment except that there is a difference in the arrangement of the temporary reference mark and the reference mark, and thus the description will focus on the difference.
- FIG. 12 is a sectional view of a reflective mask blank according to the fifth embodiment of the present invention.
- the reflective mask blank 10B has a temporary reference mark 40 and a reference mark 50B.
- the temporary reference mark 40 is formed in a concave shape or a convex shape (in this embodiment, a concave shape) on the surface 23 of the substrate 20.
- a concave temporary reference mark 40 an actual defect existing on the surface 23 of the substrate 20, for example, a concave defect such as a pit generated by polishing or cleaning can be used.
- the reference mark 50B is formed in a concave shape or a convex shape (concave shape in the present embodiment) on the formation surface of the reference mark 50B after the reflective multilayer film 31 is formed and before the absorption layer 34 is formed.
- the concave fiducial mark 50B is formed by removing at least a part of the reflective multilayer film 31. Therefore, the same effect as the first embodiment can be obtained.
- the reference mark 50B is formed to overlap the temporary reference mark 40 in plan view. That is, the reference point of the reference mark 50B and the reference point of the temporary reference mark 40 overlap in plan view. Therefore, in the present embodiment, in the quality control process of the reflective mask blank, a detection process S202 (see FIG. 11) for detecting the positional relationship between the temporary reference mark and the reference mark, and a conversion process S203 performed subsequent to the detection process S202. (Refer to FIG. 11) becomes unnecessary.
- the reference mark 50B is formed by removing a part of the reflective multilayer film 31, the size when viewed from the upper surface of the substrate is larger than the size of the temporary reference mark 40, and the depth of the reference mark 50B is temporary. It is preferable to satisfy at least one of the depths greater than the depth of the reference mark 40.
- FIG. 13 is a cross-sectional view showing a modification of FIG.
- the reflective mask blank 10C has a convex temporary reference mark 40C and a concave reference mark 50C.
- the convex temporary reference mark 40 ⁇ / b> C has a step surface 40 ⁇ / b> Ca that is substantially perpendicular to the surface 23 of the substrate 20 and an offset surface 40 ⁇ / b> Cb that is substantially parallel to the surface 23 of the substrate 20.
- the concave fiducial mark 50C has a step surface 50Ca that is substantially perpendicular to the surface on which the fiducial mark 50C is formed (the surface of the buffer layer 33), and an offset surface 50Cb that is substantially parallel to the surface on which the fiducial mark 50C is formed.
- the contour of the offset surface 40Cb and the contour of the offset surface 50Cb overlap.
- the thickness of the reflective multilayer film 31 becomes thinner at the position of the reference mark 50C, the contrast between the reference mark 50C and the periphery thereof becomes higher at the time of defect inspection of the reflective multilayer film 31. Therefore, the reproducibility of the detection position of the reference mark 50C is improved.
- each element which comprises the reflective mask blank of a present Example is demonstrated.
- a glass substrate of SiO 2 —TiO 2 type, 152.4 mm ⁇ 152.4 mm and a thickness of 6.3 mm was used as a substrate for film formation.
- This glass substrate has a thermal expansion coefficient of 0.2 ⁇ 10 ⁇ 7 / ° C., a Young's modulus of 67 GPa, a Poisson's ratio of 0.17, and a specific rigidity of 3.07 ⁇ 10 7 m 2 / s 2. Polishing was performed so that the surface roughness was 0.15 nm rms or less and the flatness was 100 nm or less.
- a film mainly composed of Cr is formed by magnetron sputtering so as to have a film thickness of about 100 nm, and the sheet resistance is 100 ⁇ / ⁇ .
- a conductive film was formed.
- the substrate is fixed to a flat electrostatic chuck by the formed conductive film, and the Mo film 2.3 nm and the Si film 4.5 nm are alternately formed on the surface opposite to the conductive film by using an ion beam sputtering method.
- the uppermost layer of the Mo / Si reflective multilayer film is a Si film.
- the Mo film has a film thickness of 2.3 nm using a Mo target in an Ar sputtering gas atmosphere (gas pressure: 0.02 Pa) and a film formation rate of 3.84 nm / min with an applied voltage of 700 V. It was.
- the Si film was formed by using a boron-doped Si target in an Ar sputtering gas atmosphere (gas pressure: 0.02 Pa) under an applied voltage of 700 V and a deposition rate of 4.62 nm / min.
- the film thickness was 5 nm.
- a protective layer made of Ru was formed by an ion beam sputtering method.
- the Ru layer has a film thickness of 2.5 nm using a Ru target in an Ar sputtering gas atmosphere (gas pressure: 0.02 Pa) under a condition of a film formation rate of 3.12 nm / min with an applied voltage of 700 V. It was.
- the Ru layer is used as the protective layer, no buffer layer is particularly formed.
- an absorption layer made of TaN was formed on the protective layer by magnetron sputtering.
- the TaN layer uses a Ta target and is a mixed gas of Ar and N 2 (Ar: 86 vol%, N 2 : 14 vol%, gas pressure: 0.3 Pa), and has a film formation rate of 7.
- the film thickness was 60 nm under the condition of 2 nm / min.
- a low reflection layer made of TaON was formed on the absorption layer by magnetron sputtering.
- the TaON layer uses a Ta target and is a mixed gas of Ar, O 2 and N 2 (Ar: 49 vol%, O 2 : 37 vol%, N 2 : 14 vol%, gas pressure: 0.3 Pa), and inputs 250 W.
- the film thickness was 8 nm under the condition that the film formation rate was 2.0 nm / min by electric power.
- a cross reference mark was formed on each surface on the surface of the substrate or after the film formation, based on the conditions shown in the table below.
- the length L of the reference mark referred to in FIG. 4 was 500 ⁇ m in any of the following examples (Examples 1 to 13).
- Example 1 to Example 4 a focused and ion beam method is used to form a cruciform and concave fiducial mark having a width W of 5000 nm and a length of 500 ⁇ m on the glass surface by changing its depth within a range of 20 to 120 nm. did. Then, based on the said manufacturing method, the reflective mask blank which formed the reflective multilayer film, the protective layer, the absorption layer, and the low reflection layer was obtained.
- the defect inspection apparatus made by Lasertec, M1350
- the electron beam drawing apparatus acceleration voltage: When 50 kV
- the signal derived from the reference mark was weak and difficult to detect.
- Example 5 to 8 a cruciform and concave fiducial mark having a width W of 5000 nm and a length of 500 ⁇ m is formed on the surface of the protective Ru layer using a focused ion beam method, and the depth is 5 to 80 nm. It was formed by changing the range. Since the Ru protective layer has a thickness of 2.5 nm, in all of Examples 5 to 8, the Mo / Si reflective multilayer film was etched to a certain depth.
- a reflective mask blank having an absorption layer and a low reflection layer formed thereon was obtained based on the above production method. And with respect to the obtained reflective mask blank, when using a defect inspection apparatus (Lasertec Corporation, M1350), the formed reference mark can be detected, and even with an electron beam drawing apparatus (acceleration voltage: 50 kV), The reference mark could be detected and the mark detection position reproducibility was good.
- a defect inspection apparatus Lasertec Corporation, M1350
- an electron beam drawing apparatus acceleration voltage: 50 kV
- Example 9 to Example 12 temporary reference marks were formed on the glass substrate surface, and then a reflective multilayer film, a protective layer, an absorption layer, and a low reflective layer were formed.
- the formed reference mark when using a defect inspection apparatus (Lasertec Corporation, M1350), the formed reference mark can be detected, and even with an electron beam drawing apparatus (acceleration voltage: 50 kV), The reference mark could be detected, and the mark detection position reproducibility showed the same value as the mark on the surface of the protective layer.
- an electron beam drawing apparatus acceleration voltage: 50 kV
- the reference mark could be detected, and the mark detection position reproducibility showed the same value as the mark on the surface of the protective layer.
- Example 13 a cross-shaped and convex reference mark having a width W shown in Table 1 is formed on the surface of the Ru layer, which is a protective layer, at a height of 80 nm.
- a Cr film having a thickness of 80 nm is formed on the surface of the Ru layer by magnetron sputtering, and after applying an electron beam negative resist and drying, a cross-shaped mark pattern is formed with an electron beam. Form. Then, the resist is removed by leaving the electron beam pattern in the developing process. Thereafter, the Cr film is removed by dry etching, and then the resist at the electron beam pattern portion is peeled off. And based on the said manufacturing method, the reflection type mask blank which formed the absorption layer and the low reflection layer is obtained.
- the defect inspection apparatus (Lasertec company make, M1350) is used with respect to the obtained reflective mask blank, the formed reference mark can be detected, and the electron beam drawing apparatus (acceleration voltage: 50 kV) can be used. The mark can be detected, and it can be confirmed that it is useful as a reference mark.
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Abstract
Description
基板、露光光を反射する反射多層膜、及び前記露光光を吸収する吸収層をこの順で有する反射型マスクブランクにおいて、
前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される一の層の表面に凹状又は凸状に形成され、前記反射多層膜の基準位置を示す基準マークをさらに有し、
該基準マークは、該基準マークの周辺とは所定波長の光に対する反射率が異なるように形成され、前記基準マーク上に成膜される層に転写される。
基板、露光光を反射する反射多層膜、及び前記露光光を吸収する吸収層をこの順で有する反射型マスクブランクの製造方法において、
前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される一の層の表面に、前記反射多層膜の基準位置を示す凹状又は凸状の基準マークを形成する工程を有し、
該基準マークは、該基準マークの周辺とは所定波長の光に対する反射率が異なるように形成され、前記基準マーク上に成膜される層に転写される。
上記の一の態様による反射型マスクブランクの品質管理方法であって、
前記反射多層膜の成膜後、前記吸収層の成膜前に、前記基準マークの位置を基準位置として、前記反射多層膜の欠陥の位置を特定する工程を有する。
図1は、本発明の第1の実施形態による反射型マスクブランクの断面図である。図2は、反射型マスクブランクの吸収層の一部を除去してなる反射型フォトマスクの一例の断面図である。
基板20は、反射多層膜31などを成膜するためのものである。基板20の表面粗さを表すRMS(Root Mean Square)は例えば0.15nm以下であり、基板20の平坦度は例えば100nm以下である。基板20の熱膨張係数は、例えば0±0.05×10-7/℃、好ましくは0±0.03×10-7/℃である。
反射多層膜31は、EUV光を反射する。反射型フォトマスク100において吸収層134のない部分に照射されたEUV光は、反射多層膜31で反射される。その反射率(波長13.5nm付近の光線反射率)の最大値は、例えば60%以上、好ましくは63%以上である。
保護層32は、反射多層膜31の酸化を防止する。保護層32の材料としては、Si、Ti、Ru、Rh、C、SiC、又はこれら元素・化合物の混合物、あるいはこれら元素・化合物にN、OやBなどを添加したものなどが使用できる。
バッファ層33は、反射型フォトマスク100の製造工程における、吸収層34のエッチングプロセス(通常、ドライエッチングプロセス)によって、反射多層膜31がダメージを受けるのを防止する。
吸収層34は、EUV光を吸収する層である。吸収層34に特に要求される特性は、反射型フォトマスク100に形成されたパターンが、EUV露光装置の投影光学系を介してウェハー上のレジスト膜に正確に転写されるように、吸収層34からの反射光の強度、位相を調整することである。
低反射層35は、吸収層134のパターンを検査する検査光に対して、吸収層34よりも低い反射率を有する層である。検査光としては、例えば257nm程度または193nm程度の波長の光が使用される。
他の機能層としては、例えばハードマスクなどがある。ハードマスクは、吸収層34(吸収層34上に低反射層35が成膜されており、かつ低反射層35がハードマスクの機能を有していない場合は、低反射層35)の面上に成膜するものであり、前述のドライエッチング速度が、吸収層34及び/又は低反射層35と比べて遅いために、レジスト膜の膜厚を薄くでき、より微細なパターンを作製できる。このようなハードマスクの材料としては、CrN,CrO,CrON、Ruなどが使用でき、その膜厚は2~10nmが好ましい。
図3は、基板及び基板の表面に形成される仮基準マークの一例の平面図である。
基準マーク50は、反射多層膜31の基準位置を示すマークである。基準マーク50は、反射多層膜31の表面又は反射多層膜31と吸収層34との間に形成される一の層32、33の表面(本実施形態ではバッファ層33の表面)に凹状又は凸状(本実施形態では凹状)に形成される。吸収層34の成膜前に、基準マーク50の位置を基準位置として、反射多層膜31の欠陥の位置を特定し、記録媒体に記録することができる。
上記第1の実施形態では、仮基準マーク及び基準マークがそれぞれ凹状に形成されている。これに対し、本実施形態では、仮基準マーク及び基準マークがそれぞれ凸状に形成されている。本実施形態は、仮基準マークの形状及び基準マークの形状に相違点がある以外、第1の実施形態と同様であるので、相違点を中心に説明する。
仮基準マーク40Aは、基板20の表面23に凸状に形成されている。反射多層膜31の成膜前に、仮基準マーク40Aの位置を基準位置として基板20の欠陥位置を特定し、記録媒体に記録することができる。
基準マーク50Aは、反射多層膜31の表面又は反射多層膜31と吸収層34との間に形成される一の層32、33の表面(本実施形態ではバッファ層33の表面)に所定の材料を積層して凸状に形成される。
本実施形態は、上記の反射型マスクブランク10の製造方法に関する。なお、上記の反射型マスクブランク10Aの製造方法も同様である。
本実施形態は、上記の反射型マスクブランク10の品質管理方法に関する。なお、上記の反射型マスクブランク10Aの品質管理方法も同様である。
上記第1の実施形態では、平面視において、基準マーク50が、仮基準マーク40から離れた位置に形成されている。これに対し、本実施形態では、基準マークが、仮基準マークと重なるように形成されている。本実施形態は、仮基準マーク及び基準マークの配置に相違点がある以外、第1の実施形態と同様であるので、相違点を中心に説明する。
例1~例4は、ガラス表面に、フォーカスドイオンビーム法を用いて、幅Wが5000nm、長さ500μmの十字型で凹状の基準マークを、その深さ20~120nmの範囲で変えて形成した。その後、上記製造方法に基づき、反射多層膜、保護層、吸収層および低反射層を形成した反射型マスクブランクを得た。そして、得られた反射型マスクブランクに対して、可視光レーザ光の欠点検査装置(レーザーテック社製、M1350)を用いると、形成した基準マークが検出できたが、電子線描画装置(加速電圧:50kV)を用いた際には、基準マーク由来のシグナルが弱く検出が困難であった。
例5~例8は、保護層であるRu層表面に、フォーカスドイオンビーム法を用いて幅W、が5000nm、長さ500μmの十字型で凹状の基準マークを、その深さ5~80nmの範囲で変えて形成した。なお、Ru保護層は、その膜厚が2.5nmであるので、例5~例8はいずれも、Mo/Siの反射多層膜も一定の深さエッチングした。
例9~例12は、ガラス基板表面に仮基準マークを形成し、その後、反射多層膜、保護層、吸収層及び低反射層を形成した。低反射層であるTaON層表面に、表1に示す幅Wにおいて、十字型で凹状の基準マークを、その深さ20~80nmの範囲で変えフォーカスドイオンビーム法を用いて形成し反射型マスクブランクを得た。
例13は、保護層であるRu層表面に、表1に示す幅Wにおいて、十字型で凸状の基準マークを、その高さ80nmで形成する。具体的に、Ru層表面に、マグネトロンスパッタリング法により、Cr膜を80nmの膜厚になるように成膜し、電子線用ネガレジストを塗布して乾燥後、電子線で十字型のマークパターンを形成する。そして、現像工程によって電子線パターンを残してレジストを除去する。その後、ドライエッチングによってCr膜を除去してから、電子線パターン部分のレジストを剥離する。そして、上記製造方法に基づき、吸収層および低反射層を形成した反射型マスクブランクが得られる。
本出願は、2011年9月1日出願の日本特許出願2011-191057に基づくものであり、その内容はここに参照として取り込まれる。
20 基板
31 反射多層膜
32 保護層
33 バッファ層
34 吸収層
35 低反射層
40 仮基準マーク
50 基準マーク
100 反射型フォトマスク
Claims (15)
- 基板、露光光を反射する反射多層膜、及び前記露光光を吸収する吸収層をこの順で有する反射型マスクブランクにおいて、
前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される一の層の表面に凹状又は凸状に形成され、前記反射多層膜の基準位置を示す基準マークをさらに有し、
該基準マークは、該基準マークの周辺とは所定波長の光に対する反射率が異なるように形成され、前記基準マーク上に成膜される層に転写される、反射型マスクブランク。 - 前記基準マークは、前記反射多層膜の一部を除去して凹状に形成される、請求項1に記載の反射型マスクブランク。
- 前記凹状の基準マークは、前記反射多層膜と前記吸収層との間に形成される層を貫通するように該層の一部を除去して形成される請求項2に記載の反射型マスクブランク。
- 前記凹状の基準マークの底部の材料と、前記反射多層膜の最上層の材料とが異なる、請求項2又は3に記載の反射型マスクブランク。
- 前記基準マークは、前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される層の表面に所定材料を積層して凸状に形成される、請求項1に記載の反射型マスクブランク。
- 前記反射型マスクブランクは、EUVL用である、請求項1~5のいずれか一項に記載の反射型マスクブランク。
- 基板、露光光を反射する反射多層膜、及び前記露光光を吸収する吸収層をこの順で有する反射型マスクブランクの製造方法において、
前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される一の層の表面に、前記反射多層膜の基準位置を示す凹状又は凸状の基準マークを形成する工程を有し、
該基準マークは、該基準マークの周辺とは所定波長の光に対する反射率が異なるように形成され、前記基準マーク上に成膜される層に転写される、反射型マスクブランクの製造方法。 - 前記基準マークは、前記反射多層膜の一部を除去して凹状に形成される、請求項7に記載の反射型マスクブランクの製造方法。
- 前記凹状の基準マークは、前記反射多層膜と前記吸収層との間に形成される層を貫通するように該層の一部を除去して形成される、請求項8に記載の反射型マスクブランクの製造方法。
- 前記凹状の基準マークの底部の材料と、前記反射多層膜の最上層の材料とが異なる、請求項8又は9に記載の反射型マスクブランクの製造方法。
- 前記基準マークは、前記反射多層膜の表面又は前記反射多層膜と前記吸収層との間に形成される層の表面に所定材料を積層して凸状に形成される、請求項10に記載の反射型マスクブランクの製造方法。
- 前記反射型マスクブランクは、EUVL用である、請求項7~11のいずれか一項に記載の反射型マスクブランクの製造方法。
- 請求項1~6のいずれか一項に記載の反射型マスクブランクの品質管理方法であって、
前記反射多層膜の成膜後、前記吸収層の成膜前に、前記基準マークの位置を基準位置として、前記反射多層膜の欠陥の位置を特定する工程を有する、反射型マスクブランクの品質管理方法。 - 前記基板上にある凹状又は凸状の仮基準マークの位置を基準位置として、前記基板上の欠陥の位置を特定する工程と、
前記仮基準マークと前記基準マークの位置関係を検出する工程と、
前記位置関係に基づいて、前記仮基準マークの位置を基準位置として特定した欠陥の位置を、前記基準マークの位置を基準位置とする位置に換算する工程とをさらに有する、請求項13に記載の反射型マスクブランクの品質管理方法。 - 前記基板上にある凹状又は凸状の仮基準マークの位置を基準位置として、前記基板上の欠陥の位置を特定する工程をさらに有し、
平面視において、前記基準マークは、前記仮基準マークと重なる位置に形成されている請求項13に記載の反射型マスクブランクの品質管理方法。
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US8916316B2 (en) | 2014-12-23 |
JP5935804B2 (ja) | 2016-06-15 |
JPWO2013031863A1 (ja) | 2015-03-23 |
KR20140068912A (ko) | 2014-06-09 |
TW201312257A (zh) | 2013-03-16 |
US20140186753A1 (en) | 2014-07-03 |
KR101908168B1 (ko) | 2018-10-15 |
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