JP7286544B2 - 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 - Google Patents

多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Download PDF

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JP7286544B2
JP7286544B2 JP2019549295A JP2019549295A JP7286544B2 JP 7286544 B2 JP7286544 B2 JP 7286544B2 JP 2019549295 A JP2019549295 A JP 2019549295A JP 2019549295 A JP2019549295 A JP 2019549295A JP 7286544 B2 JP7286544 B2 JP 7286544B2
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Prior art keywords
film
substrate
multilayer reflective
reflective film
reference mark
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JPWO2019078206A1 (ja
Inventor
和宏 浜本
勉 笑喜
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Hoya Corp
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Hoya Corp
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Priority to JP2024091133A priority patent/JP7688763B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2019549295A 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 Active JP7286544B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023085233A JP7500828B2 (ja) 2017-10-17 2023-05-24 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2024091133A JP7688763B2 (ja) 2017-10-17 2024-06-05 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017201189 2017-10-17
JP2017201189 2017-10-17
PCT/JP2018/038501 WO2019078206A1 (ja) 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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JP2023085233A Division JP7500828B2 (ja) 2017-10-17 2023-05-24 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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JPWO2019078206A1 JPWO2019078206A1 (ja) 2020-11-05
JP7286544B2 true JP7286544B2 (ja) 2023-06-05

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JP2019549295A Active JP7286544B2 (ja) 2017-10-17 2018-10-16 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2023085233A Active JP7500828B2 (ja) 2017-10-17 2023-05-24 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2024091133A Active JP7688763B2 (ja) 2017-10-17 2024-06-05 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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JP2024091133A Active JP7688763B2 (ja) 2017-10-17 2024-06-05 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

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US (3) US11262647B2 (https=)
JP (3) JP7286544B2 (https=)
KR (2) KR102937794B1 (https=)
SG (1) SG11202002853TA (https=)
TW (3) TWI889453B (https=)
WO (1) WO2019078206A1 (https=)

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WO2019078206A1 (ja) 2017-10-17 2019-04-25 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TWI811369B (zh) 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP7610346B2 (ja) * 2019-11-01 2025-01-08 テクセンドフォトマスク株式会社 反射型マスク及び反射型マスクの製造方法
CN111290224B (zh) * 2020-02-20 2023-04-07 上海华力微电子有限公司 一种单元标记及其设计方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
TW202246879A (zh) * 2021-02-09 2022-12-01 美商應用材料股份有限公司 極紫外光遮罩毛胚結構
US11782337B2 (en) * 2021-09-09 2023-10-10 Applied Materials, Inc. Multilayer extreme ultraviolet reflectors
JP2025036222A (ja) 2023-08-31 2025-03-14 Hoya株式会社 多層反射膜付き基板、マスクブランク、転写用マスク及び転写用マスクの製造方法
KR20250179074A (ko) * 2024-06-20 2025-12-29 신에쓰 가가꾸 고교 가부시끼가이샤 반사형 마스크 블랭크 및 그 제조 방법, 및 반사형 마스크 블랭크 관련 기판의 검사 방법
US20260044067A1 (en) * 2024-08-09 2026-02-12 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and method for manufacturing the same
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
WO2026058621A1 (ja) * 2024-09-13 2026-03-19 Ａｇｃ株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク

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JP2017075997A (ja) 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法

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Also Published As

Publication number Publication date
JP7500828B2 (ja) 2024-06-17
KR102937794B1 (ko) 2026-03-12
JP2023104997A (ja) 2023-07-28
US11262647B2 (en) 2022-03-01
KR20250046343A (ko) 2025-04-02
KR102785832B1 (ko) 2025-03-26
JPWO2019078206A1 (ja) 2020-11-05
TWI851543B (zh) 2024-08-11
TW201928503A (zh) 2019-07-16
US12025911B2 (en) 2024-07-02
JP2024114710A (ja) 2024-08-23
WO2019078206A8 (ja) 2020-02-20
US20230266658A1 (en) 2023-08-24
US11681214B2 (en) 2023-06-20
SG11202002853TA (en) 2020-05-28
JP7688763B2 (ja) 2025-06-04
TW202536526A (zh) 2025-09-16
TWI889453B (zh) 2025-07-01
US20220146925A1 (en) 2022-05-12
TW202447325A (zh) 2024-12-01
WO2019078206A1 (ja) 2019-04-25
US20200249558A1 (en) 2020-08-06
KR20200064065A (ko) 2020-06-05

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