TWI889453B - 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法 - Google Patents

附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法 Download PDF

Info

Publication number
TWI889453B
TWI889453B TW113126233A TW113126233A TWI889453B TW I889453 B TWI889453 B TW I889453B TW 113126233 A TW113126233 A TW 113126233A TW 113126233 A TW113126233 A TW 113126233A TW I889453 B TWI889453 B TW I889453B
Authority
TW
Taiwan
Prior art keywords
film
substrate
reflective film
layer reflective
layer
Prior art date
Application number
TW113126233A
Other languages
English (en)
Chinese (zh)
Other versions
TW202447325A (zh
Inventor
浜本和宏
笑喜勉
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202447325A publication Critical patent/TW202447325A/zh
Application granted granted Critical
Publication of TWI889453B publication Critical patent/TWI889453B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW113126233A 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法 TWI889453B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017201189 2017-10-17
JP2017-201189 2017-10-17

Publications (2)

Publication Number Publication Date
TW202447325A TW202447325A (zh) 2024-12-01
TWI889453B true TWI889453B (zh) 2025-07-01

Family

ID=66174168

Family Applications (3)

Application Number Title Priority Date Filing Date
TW113126233A TWI889453B (zh) 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
TW114120942A TW202536526A (zh) 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
TW107136501A TWI851543B (zh) 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW114120942A TW202536526A (zh) 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
TW107136501A TWI851543B (zh) 2017-10-17 2018-10-17 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法

Country Status (6)

Country Link
US (3) US11262647B2 (https=)
JP (3) JP7286544B2 (https=)
KR (2) KR102937794B1 (https=)
SG (1) SG11202002853TA (https=)
TW (3) TWI889453B (https=)
WO (1) WO2019078206A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019078206A1 (ja) 2017-10-17 2019-04-25 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TWI811369B (zh) 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP7610346B2 (ja) * 2019-11-01 2025-01-08 テクセンドフォトマスク株式会社 反射型マスク及び反射型マスクの製造方法
CN111290224B (zh) * 2020-02-20 2023-04-07 上海华力微电子有限公司 一种单元标记及其设计方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
TW202246879A (zh) * 2021-02-09 2022-12-01 美商應用材料股份有限公司 極紫外光遮罩毛胚結構
US11782337B2 (en) * 2021-09-09 2023-10-10 Applied Materials, Inc. Multilayer extreme ultraviolet reflectors
JP2025036222A (ja) 2023-08-31 2025-03-14 Hoya株式会社 多層反射膜付き基板、マスクブランク、転写用マスク及び転写用マスクの製造方法
KR20250179074A (ko) * 2024-06-20 2025-12-29 신에쓰 가가꾸 고교 가부시끼가이샤 반사형 마스크 블랭크 및 그 제조 방법, 및 반사형 마스크 블랭크 관련 기판의 검사 방법
US20260044067A1 (en) * 2024-08-09 2026-02-12 Shin-Etsu Chemical Co., Ltd. Reflective mask blank and method for manufacturing the same
WO2026042468A1 (ja) * 2024-08-22 2026-02-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
WO2026058621A1 (ja) * 2024-09-13 2026-03-19 Ａｇｃ株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201600920A (zh) * 2014-03-24 2016-01-01 Toppan Printing Co Ltd Ｅｕｖ光罩的相位缺陷評價方法、ｅｕｖ光罩的製造方法、ｅｕｖ空白光罩及ｅｕｖ光罩
US9268207B2 (en) * 2012-09-28 2016-02-23 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, method of manufacturing thereof, reflective mask for EUV lithography and method of manufacturing thereof
JP2016188911A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021901A (ja) * 1988-06-09 1990-01-08 Fujitsu Ltd 位置合わせマークの形成方法
JP3219502B2 (ja) 1992-12-01 2001-10-15 キヤノン株式会社 反射型マスクとその製造方法、並びに露光装置と半導体デバイス製造方法
US6830851B2 (en) * 2001-06-30 2004-12-14 Intel Corporation Photolithographic mask fabrication
US6756158B2 (en) * 2001-06-30 2004-06-29 Intel Corporation Thermal generation of mask pattern
JP2005317617A (ja) * 2004-04-27 2005-11-10 Nikon Corp 位置検出用マーク及びそれを備えたレチクル又は感光性基板、位置検出方法、マーク評価方法、及びマーク検出方法とマーク検出装置、並びに露光方法と露光装置
US8399160B2 (en) * 2008-11-27 2013-03-19 Hoya Corporation Multilayer reflective film coated substrate, reflective mask blank, and method of manufacturing a reflective mask
JP2010219445A (ja) 2009-03-18 2010-09-30 Nuflare Technology Inc 荷電粒子ビーム描画方法、荷電粒子ビーム描画用の基準マークの位置検出方法及び荷電粒子ビーム描画装置
JP5910625B2 (ja) * 2011-03-07 2016-04-27 旭硝子株式会社 多層基板、多層基板の製造方法、多層基板の品質管理方法
WO2013031863A1 (ja) 2011-09-01 2013-03-07 旭硝子株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクブランクの品質管理方法
JP6460619B2 (ja) 2012-03-12 2019-01-30 Hoya株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP2013222811A (ja) 2012-04-16 2013-10-28 Lasertec Corp Ｅｕｖマスクブランクス、マスクの製造方法、及びアライメント方法
JP6586934B2 (ja) 2015-09-17 2019-10-09 Ａｇｃ株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
JP2017075997A (ja) * 2015-10-13 2017-04-20 旭硝子株式会社 反射型マスクブランク、及び反射型マスクブランクの製造方法
WO2019078206A1 (ja) 2017-10-17 2019-04-25 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2022004201A1 (en) 2020-06-30 2022-01-06 Aoyama Seisakusho Co., Ltd. Piercing nut and method for fixing the same to inner surface of mating member having closed sectional shape

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9268207B2 (en) * 2012-09-28 2016-02-23 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, method of manufacturing thereof, reflective mask for EUV lithography and method of manufacturing thereof
TW201600920A (zh) * 2014-03-24 2016-01-01 Toppan Printing Co Ltd Ｅｕｖ光罩的相位缺陷評價方法、ｅｕｖ光罩的製造方法、ｅｕｖ空白光罩及ｅｕｖ光罩
JP2016188911A (ja) * 2015-03-30 2016-11-04 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びにそれらの製造方法

Also Published As

Publication number Publication date
JP7500828B2 (ja) 2024-06-17
KR102937794B1 (ko) 2026-03-12
JP2023104997A (ja) 2023-07-28
US11262647B2 (en) 2022-03-01
KR20250046343A (ko) 2025-04-02
KR102785832B1 (ko) 2025-03-26
JPWO2019078206A1 (ja) 2020-11-05
TWI851543B (zh) 2024-08-11
TW201928503A (zh) 2019-07-16
US12025911B2 (en) 2024-07-02
JP2024114710A (ja) 2024-08-23
WO2019078206A8 (ja) 2020-02-20
US20230266658A1 (en) 2023-08-24
US11681214B2 (en) 2023-06-20
SG11202002853TA (en) 2020-05-28
JP7688763B2 (ja) 2025-06-04
TW202536526A (zh) 2025-09-16
US20220146925A1 (en) 2022-05-12
TW202447325A (zh) 2024-12-01
WO2019078206A1 (ja) 2019-04-25
US20200249558A1 (en) 2020-08-06
JP7286544B2 (ja) 2023-06-05
KR20200064065A (ko) 2020-06-05

Similar Documents

Publication Publication Date Title
TWI889453B (zh) 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
JP7250511B2 (ja) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP6357143B2 (ja) 反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP5935804B2 (ja) 反射型マスクブランク及び反射型マスクブランクの製造方法
JP6460617B2 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法
JP6509987B2 (ja) 反射型マスクブランク及びその製造方法、並びに反射型マスク及びその製造方法
TW201802571A (zh) 反射型光罩基底之製造方法、反射型光罩基底、反射型光罩之製造方法、反射型光罩、及半導體裝置之製造方法
JP6743505B2 (ja) 反射型マスクブランクおよび反射型マスク
JP7492456B2 (ja) 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
TWI808103B (zh) 附多層反射膜之基板、反射型光罩基底、反射型光罩、及半導體裝置之製造方法
JP2018205350A (ja) 反射型マスクブランク、反射型マスクの製造方法、マスクブランク、マスクの製造方法、半導体装置の製造方法、レジスト除去装置、及びレジスト除去方法
JP2014232844A (ja) 反射型マスクの製造方法
KR20260048316A (ko) 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
JP2013110173A (ja) 反射型マスクブランクス、反射型マスク、および、それらの製造方法、並びに、反射型マスクブランクスの検査方法
TW202516268A (zh) 附多層反射膜基板、遮罩基底、轉印用遮罩及轉印用遮罩之製造方法